• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.3
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• pp.253-268
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• 2020

This study examined the effectiveness of policy measures in a growth management plan by analyzing empirically the influence of regulations and incentives in a non-urban growth management plan of Sejong City using the binomial logistic model. The parcel unit data related development location of Sejong City from 2012 to 2017 was used in the model. The analysis showed that time regulation in the growth management plan has a negative (-) impact on the spread of development, which means it is effective in slowing urban sprawl by lowering the profits of developers. The time regulation applied in Sejong City needs to be used actively in other cities in Korea to prevent urban sprawl. Nevertheless, floor ratio incentives had no influence in inducing development within the growth management area, which means a new incentive policy to meet the local characteristics is needed to strengthen the effectiveness of the growth management plan. This study is meaningful because it attempted an empirical analysis of the effects of the growth management plan at The National Territory Act, and this study could encourage further studies.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.261.2-261.2
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• 2013

에너지 갭이 큰 ZnO 반도체는 빛 투과율이 우수하여 투명성이 좋으며 화학적으로 안정된 구조를 가지고 있어 전자소자 및 광소자 응용에 대단히 유용하다. 일반적으로 화학 기상증착, 전자빔증착과 전기화학증착법을 사용하여 ZnO 나노 구조를 제작하고 있다. 여러 가지 증착 방법 중에서 전기화학증착방법은 낮은 온도와 진공 공정이 필요하지 않으며 대면적 공정이 가능하고 빠른 성장 속도로 나노구조를 효과적으로 성장할 수 있는 장점을 가지고 있다. 본 연구에서는 전기화학증착법을 이용하여 Indium Tin Oxide (ITO) 기판위에 Al 도핑된 ZnO 나노세선 성장시키고 성장시간에 따라 형성한 ZnO 나노세선의 구조적 성질을 조사하였다. ZnO 나노세선을 성장하기 위하여 zinc nitrate와 potassium chloride를 각각 0.1 M을 용해한 용액을 사용하였다. 전기화학증착방법을 사용하여 제작한 ITO 기판 위에 성장시킨 ZnO 나노세선 위에 전극을 제작하고 전류-전압 특성을 측정하였다. Al-doped ZnO 나노세선의 성장되는 조건을 Al 농도별로 0 wt%, 1 wt%, 2 wt% 및 5 wt% 씩 증가시키면서 ZnO 나노세선의 구조적 특성을 분석하였다. X-선회절 (X-ray diffraction; XRD) 실험 결과를 통해 ZnO 나노세선이 성장함을 확인하였고, 성장 시간이 길어짐에 따라 (101) 성장방향의 XRD 피크의 세기가 증가하였다. 전기화학증착시 Al 도핑 농도 증가에 따라 ZnO 나노세선의 지름이 200 nm에서 300 nm로 변화하는 것을 주사전자현미경으로 관측하였다. 이 실험 결과는 전기화학증착방법을 사용하여 제작한 ZnO 나노세선의 Al 도핑 농도에 따른 구조적 특성들을 최적화하여 소자제작에 응용하는데 도움이 됨을 보여주고 있다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.185-193
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• 1996

$2.5^{\circ}\;and\;5^{\circ}$ tilted (100) Si wafer were oxidized in dry oxygen, and the differences in thermal oxidation behavior and oxidation induced stacking faults (OSF) between specimens were investigated. Ellipsometer measurements of the oxide thickness produced by oxidation in dry oxygen from 900 to $1200^{\circ}C$ showed that the oxidation rates of the tilted (100) Si were more rapid than those of the (100) Si and the differences between them decreased as the oxidation temperature increased. The activation energies based on the parabolic rate constant, B for (100) Si, $2.5^{\circ}$ off (100) Si and $5^{\circ}$ off (100) Si were 27.3, 25.9, 27.6 kcal/mol and those on the linear rate constant, B/A were 58.6, 56.6, 57.6 kcal/mol, respectively. Also, considerable decrease in the density of oxidation induced stacking faults for the $5^{\circ}$ off (100) Si was observed through optical microscopy after preferentially etching off the oxide layer, and the angle of stacking faults were changed with tilted angles.

• The KIPS Transactions:PartD
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• v.10D no.5
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• pp.829-836
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• 2003

Software Reliability Growth Model that have been studied variously. But measurement of correct parameter of this model is not easy. Specially, estimation of correct model about failure data must be establish and estimation of parameter can consist exactly. To get correct testing, we calculate the normal score and describe the normal probability plot. Use the normal probability plot, we estimate the distribution for failure data. In this paper, we estimate the software reliability growth model for through the normal probability plot. In this research, we applies software reliability growth model through distribution characteristics of failure data. If we see plot, we determine the software reliability growth model, we can make sure superior in model's performance estimation.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.282-288
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• 2003

We report the growth of HgCdTe by metal organic vapor phase epitaxy (MOVPE), using (211)B CdTe/Si substrates grown by molecular beam epitaxy (MBE). The surface morphology of these films is very smooth with hillock free. The etch pit densities (EPD) and full widths at half maximum (FWHM) of x-ray rocking curves exhibited that the crystalline quality of HgCdTe epilayer on MBE grown CdTe/Si was improved compare to HgCdTe on GaAs substrate. The Hall parameters of undoped HgCdTe layers on CdTe/Si showed n-type behavior with carrier concentration of $8{\times}10^{14}/cm^3$ at 77K. But HgCdTe on GaAs showed p-type conductivity due to in corporation of p-type impurities during GaAs substrate preparation. It is thought that these results are applicable for large area HgCdTe forcal plane arrays of $1024{\times}1024$ format and beyound.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.4
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• pp.409-417
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• 2014

To prevent the occurrence of fractures in metal structures, it is very important to evaluate the 3D crack growth process in those structures and any related parts. In this study, tension tests and two simulations, namely, Simulation-I and Simulation-II, were performed using XFEM to evaluate crack growth in three dimensions. In the tension test, Mode I crack growth was observed for a notched metal specimen. In Simulation-I, a 3D reconstructed model of the specimen was created using CT images of the specimen. Using this model, an FE model was constructed, and crack growth was simulated using XFEM. In Simulation-II, an ideal notch FE model of the same geometric size as the actual specimen was created and then used for simulation. Obtained crack growth simulation results were then compared. Crack growth in the metal specimen was evaluated in three dimensions. It was shown that modeling the real shape of a structure with a crack may be essential for accurately evaluating 3D crack growth.

• The Korean Journal of Malacology
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• v.32 no.4
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• pp.249-254
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• 2016

The purpose of this study is to estimate genetic parameter and growth traits by sex of Pacific abalone, Haliotis discus hannai. The abalone 10 family produced using 1:1 mating system of male and female for analyses of sex ratio and growth traits (shell length, shell width, and total weight) by sex. Overall mean in phenotypic traits at 30-month-old showed 85.01 mm of shell length, 57.49 mm of shell width and 73.34 g of total weight respectively. The sex ratio (female : male) was 1:0.93 (n = 191:177). The values of growth traits by sex showed significant difference (P < 0.05). The each value of female growth traits were shown to be higher than the values of male growth traits. The heritability of growth traits by sex were estimated that the heritability of female growth traits are higher than male that. The results suggest a possibility of improving the growth of cultured abalone using selection breeding by sex.

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.26-32
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• 1997

Quartz single crystals were grown hydrothermally and growth defects such as dislocations, etch channels and impurities were examined. Growth rates were 0.25-0.65 mm/day under the growth conditions of following. 1. Mineralizer: $4wt.\%$ NaOH. 2. Growth temperature: $340-360^{\circ}C$. 3. Temperature gradient: $20-40^{\circ}C$. 4. Seed: ZY plate. 5. Nutrient: synthetic quartz. Defects of the quartz which was grown with optical grade synthetic nutrient, low dislocation density seed and horizontal seed setting technique were as follows. 1. Dislocation density: 20.0 each/$cm^2$. 2. Etch channel density: 5.0 each/$cm^2$ (1st grade by IEC 758 standard). 3. Impurity (larger than 10$\mu$) concentration: 2.4 each/$cm^3$ (Ia grade by IEC 758 standard). 4. Alpha value: 0.019 (A grade by IEC 758 standard).

• Journal of Integrative Natural Science
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• v.14 no.1
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• pp.1-5
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• 2021

A zinc oxide thin film was made by varying the deposition time on the silicon(110) substrate by using a radio frequency sputtering time of 60 minutes, 120 minutes and 180 minutes. As a result of analyzing the grain growth surface of the ZnO₂ thin film using an X-ray diffraction apparatus, the directions of the main growth plane (002) and (103) planes of the thin film were significantly affected by the deposition time. As a result of observing the particle growth of the ZnO₂ thin film through an electron scanning microscope, it was observed that in the initial stage of deposition of the ZnO₂ thin film, an incubation time was required during which growth was stagnant, and then particle growth occurred again after a certain period of time. As a result of chemical analysis of the ZnO₂ thin film, the increase in the deposition time did not change with the amount of oxygen in the ZnO₂ thin film, but a change in the composition of Zn was observed, indicating that the deposition time of the thin film had an effect on the Zn component in the thin film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.3
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• pp.83-88
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• 2022

To improve the crystallinity of GaN, there are researches on surface treatment to control the difference in physical properties between GaN and heterogeneous substrate. 'Low-temperature GaN (LT-GaN)' is one of the ways to solve the problem and we investigated the relationship between growth temperature and properties of LT-GaN in our homemade vertical type HVPE. The LT-GaN nuclei were formed on the sapphire surface at low growth temperatures and they presented differences in the density and crystallinity depending on the growth temperature. Significantly, the stress relaxation effect on the epitaxial GaN (epi-GaN) was affected by the crystallinity of LT-GaN. However, the high crystallinity of LT-GaN exacerbated the crystal quality of epi-GaN because they worked as a catalyst and seed of polycrystalline.