Growth of Low Defect Piezo-quartz and Defect Analysis

저결함 압전수정의 성장과 결함분석

Quartz single crystals were grown hydrothermally and growth defects such as dislocations, etch channels and impurities were examined. Growth rates were 0.25-0.65 mm/day under the growth conditions of following. 1. Mineralizer: $4wt.\%$ NaOH. 2. Growth temperature: $340-360^{\circ}C$. 3. Temperature gradient: $20-40^{\circ}C$. 4. Seed: ZY plate. 5. Nutrient: synthetic quartz. Defects of the quartz which was grown with optical grade synthetic nutrient, low dislocation density seed and horizontal seed setting technique were as follows. 1. Dislocation density: 20.0 each/$cm^2$. 2. Etch channel density: 5.0 each/$cm^2$ (1st grade by IEC 758 standard). 3. Impurity (larger than 10$\mu$) concentration: 2.4 each/$cm^3$ (Ia grade by IEC 758 standard). 4. Alpha value: 0.019 (A grade by IEC 758 standard).

수열법을 이용하여 압전수정을 성장하고 각종 성장결함을 분석하였다. 4 중량퍼센트 NaOH, 성장온도 $340-360^{\circ}C$, 온도구배 $20-40^{\circ}C$의 성장조건에서 (0001)방향의 ZY 종자결정, 합성수정을 원료로 하였을 경우 성장속도는 0.25-0.65 mm/day 였다. 원료로써 합성수정을 사용하고 저전위 종자결정 위에서 수평 종자결정 배치법으로 성장된 압전수정의 전위밀도는 20.0개/$cm^2$, 에치채널 밀도는 5.0개/$cm^2,\;10\mu$ 이상의 함유물 농도는 2.4개/$cm^3$, 알파값은 0.019였으며, IEC 758규격에 의한 등급분류는 에치채널 밀도 1등급, 함유물 농도 Ia등급, 알파값 A등급이었다.