• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.162-163
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• 2007

The dry etching of Si was investigated using direct dc biasing to the Si substrate. The TCP type etching system with a feed-through for applying a dc bias was used in the etching. The applied dc bias and ICP power was varied to examine the effect on the etching at the fixed chamber pressure and $SF_6$ flow rate of 10 mTorr and 10 sccm during. When the plasma was generated at ICP power of 100 W, the etch rate of Si was increased with the bias for the biased samples. However, the etching of Si for the non-biased sample was enhanced for the increased ICP power.

• Korean Journal of Materials Research
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• v.31 no.3
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• pp.162-171
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• 2021

Dry etching of copper thin films is performed using high density plasma of ethylenediamine (EDA)/hexafluoroisopropanol (HFIP)/Ar gas mixture. The etch rates, etch selectivities and etch profiles of the copper thin films are improved by adding HFIP to EDA/Ar gas. As the EDA/HFIP concentration in EDA/HFIP/Ar increases, the etch rate of copper thin films decreases, whereas the etch profile is improved. In the EDA/HFIP/Ar gas mixture, the optimal ratio of EDA to HFIP is investigated. In addition, the etch parameters including ICP source power, dc-bias voltage, process pressure are varied to examine the etch characteristics. Optical emission spectroscopy results show that among all species, [CH], [CN] and [H] are the main species in the EDA/HFIP/Ar plasma. The X-ray photoelectron spectroscopy results indicate the formation of CuCN compound and C-N-H-containing polymers during the etching process, leading to a good etch profile. Finally, anisotropic etch profiles of the copper thin films patterned with 150 nm scale are obtained in EDA/HFIP/Ar gas mixture.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.125-129
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• 2022

The current display technology tends to be highly integrated with high resolution, the element size is gradually downsized, and the structure becomes complicated. Inductively coupled plasma (ICP) dry etcher of various types of etching equipment is a structure that places a large multi-divisional antenna source on the top lid, passes current to the Antenna, and generates plasma using the induced magnetic field generated at this time. However, in the case of a device of a large area size, a support that can withstand a load structurally is necessary, and when these support portions are applied, arrangement of antenna becomes difficult, which causes reduction in uniformity. As described above, the development of antenna source of a large area having a uniform plasma density on the whole surface is difficult to restrict hardware (H/W). As a solution to this problem, we confirmed the change in uniformity of plasma by applying two kinds of specific shape faraday shield(FICP) to the lower part of the large area upper lid antenna of 6 and 8th more than that generation size. In this thesis, we verify the faraday shield effect which can improve plasma uniformity control of ICP dry etcher equipment applied to medium and large displays.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.26-31
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• 2023

We investigated the impact of NF₃ / H₂O remote plasma dry cleaning conditions on the SiO₂ etching rate at different preparation states during the fabrication of ultra-large-scale integration (ULSI) devices. This included consideration of factors like Si crystal orientation prior to oxidation and three-dimensional structures. The dry cleaning process were carried out varying the parameters of pressure, NF₃ flow rate, and H₂O flow rate. We found that the pressure had an effective role in controlling anisotropic etching when a thin SiO₂ layer was situated between Si₃N₄ and Si layers in a multilayer trench structure. Based on these observations, we would like to provide further guidelines for implementing the dry cleaning process in the fabrication of semiconductor devices having 3D structures.

• Applied Chemistry for Engineering
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• v.8 no.3
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• pp.395-402
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• 1997

The $SiO_2$ films were prepared by ECR(electron cyclotron resonance) plasma diffusion method, Deal-Grove model and Wolters-Zegers-van Duynhoven model were used to estimate the oxidation rate which was correlated with surface morphology for different orientation of Si(100) and Si(111). It was seen the $SiO_2$ thickness increased linearly with initial oxidation time. But oxidation rate slightly decrease with oxidation time. It was also shown that the oxidation process was controlled by the diffusion of the reactive species through the oxide layer rather than by the reaction rate at the oxide interface. The similar time dependency has been observed for thermal and plasma oxidation of silicon. From D-G model and W-Z model, the oxidation rate of Si(111) was 1.13 times greater than Si(100) because Si(111) had higher diffusion and reaction rate, these models more closely fits the experimental data. The $SiO_2$ surface roughness was found to be uniform at experimental conditions without etching although oxidation rate was increased, and to be nonuniform due to etching at experimental condition with higher microwave power and closer substrate distance.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.469-474
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• 2004

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.97-101
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• 2009

In the modem semiconductor industry, the progress that consumes the most capital and labor is cleansing process. Cleansing process is to remove impurities that can affect the operation of the device and deteriorate its function. Especially, Photoresist (PR) progress that etches the device always requires cleansing at the end of the progress. Also, HDI-PR (High-Dose Ion-implanted Photoresist) created from PR progress is difficult to remove. Thus, in modem IC cleansing, many steps of cleansing are used, including dry and wet cleansing. In this paper, we suggested to combine existing dry-cleansing and wet-cleansing, each represented by plasma cleansing and stripper solution, as Plasma Liquid-Vapor Activation (PLVA). This PLVA method enhances the effect of existing cleansing solution, and decreases the amount of solution and time required to strip. We stripped HDI-PR by activated solution and measured surface hardness and Young's modulus by Nano-indenter. Nano-indenter is the equipment that determines the hardness and the modulus of elasticity by indenting nano-sized tip with specific shape into the surface and measuring weight and z-axis displacement. We measured the change of surface hardness and Young's modulus before and after the cleansing. As a result, we found out that the surface hardness of the sample sharply decreased after the cleansing by plasma-activated PR stripper solution. It can be considered that if physical surface-cleansing process is inserted after this, more effective elimination of HDI-PR is possible.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.63-74
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• 1994

The ultrathin oxide films less than 100$\AA$ were grown by thermal oxidation in $N_2O$ ambient to improve the controllability of thickness, thickness uniformity, process reproducibility and their electrical properties. Oxidation rate was reduced significantly at very thin region due to the formation of oxynitride layer in $N_2O$ ambient and moreover nitridation of the oxide layer was simultaneously accompanied during growth. The nitrogen incorporation in the grown oxide layer was characterized with the wet chemical etch-rate and ESCA analysis of the grown oxide layer. All the oxides thin films grown in $N_2O$, pure and dilute $O_2$ ambients show Fowler-Nordheim electrical conduction. The electrical characteristics of thin oxide films grown in $N_2O$ such as leakage current, electrical breakdown, interface trap density generation due to the injected electron and reliability were better than those in pure or dilute ambient. These improved properties can be explained by the fact that the weak Si-0 bond is reduced by stress relaxation during oxidation and replacement by strong Si-N bond, and thus the trap sites are reduced.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.27-34
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• 2005

We have investigated the correlation between the active-layer uniformity and reliability of InGaN/GaN blue LEDs. According to initial characteristics, the devices are classified into two groups: group I devices of uniform light-emission and group II devices of non-uniform light-emission. The group II devices are more dependent on temperature and we have found two degradation mechanisms through reliability test. One is bulk degradation in which the degradation occurred over the entire chip and another one is edge degradation in which the degradation occurred from the edge of the chip. Bulk degradation caused by the nonradiative defects is found to be faster in group II devices while there is no difference in the rate of the much faster edge degradation, where darkening starts from the n-Ohmic contact edge. Therefore, more uniform active layer, more uniform current spreading, and the passivation of the dry-etched side-wall are essential for the high reliability of InGaN/GaN LEDs.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.215.1-215.1
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• 2016

플라즈마는 반도체, 디스플레이, 태양전지 등 다양한 산업 분야에 이용된다. 플라즈마 공정 시 수율 향상을 위해 플라즈마를 진단하는 기술이 필요한데, 대표적으로 전자온도가 있다. 반도체 공정의 낮은 압력과 높은 밀도의 플라즈마에서 전자온도는 1~10 eV 정도인데, 0.5 eV정도의 아주 적은 차이로도 공정 결과에 큰 영향을 미친다. 플라즈마의 전자온도를 측정하는 방법은 전기적 탐침 방법인 랑뮤어 탐침(Langmuir Probe)과 와이즈 프로브(Wise Probe)를 이용한 방법, 그리고 광학적 방법인 방출분광법(OES : Optical Emission Spectroscopy)이 있다. 전기적 탐침 방법은 직접 플라즈마 내부에 탐침을 넣기 때문에 불활성 기체를 사용한 공정에서는 잘 작동하지만 건식식각이나 증착에 사용할 경우 탐침의 오염으로 인한 오동작, 공정 시 생성된 샘플에 영향을 줄 수 있다는 단점이 있다. 반면에 방출분광법은 광학적 진단으로, 플라즈마를 사용하는 공정 진행 중에 외부에 광학계를 설치하여 플라즈마에서 발생하는 빛을 광학적으로 분석하기 때문에 공정에 영향을 미치지 않고, 공정 장비에 적용이 쉬운 장점을 가지고 있다. 본 연구에서는 RF Power를 인가한 유도결합플라즈마(ICP : Inductively Coupled Plasma) 공정에서 아르곤 가스와 산소 혼합가스 분압과 인가전압을 변화시켜 플라즈마 방출광 세기 변화에 따른 전자온도를 측정하였다. 전자온도 측정에는 전기적 방법인 랑뮤어 탐침, 와이즈 프로브를 이용한 방법과 광학적 방법인 방출분광법을 사용하여 측정하였으며 이를 비교 분석하였다.