• Transactions of the Korean Society of Pressure Vessels and Piping
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• v.19 no.2
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• pp.84-92
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• 2023

As temporary storage facilities for spent nuclear fuels in domestic nuclear power plants are expected to be saturated, external intermediate storage facilities would be required in the future. Spent nuclear fuels are stored in metal canisters and then placed in a dry environment within concrete or metal casing for operation. In the United States, the dry storage method for spent nuclear fuels has been operated for an extended period. Based on the corrosion experiences of dry storage canisters in chloride environments, numerous studies have been conducted to reduce corrosion in welds. With the construction of intermediate storage facilities in Korea for spent nuclear fuels expected near coastal areas adjacent to nuclear power plants, there is a need for research on the corrosion occurrence of welds and mitigation methods for canisters in chloride environments. In this paper, we measured and compared the residual stresses in the Heat-Affected Zones (HAZ) after electron beam welding (EBW) and gas tungsten arc welding (GTAW) processes for candidate materials such as 304L, 316L, and duplex stainless steel(DSS). We investigated the possibility of microstructure control through the application of surface modification processes using friction stir processing (FSP). Corrosion tests on each welded specimen revealed a higher corrosion rate in EBW welds compared to GTAW. Furthermore, it was confirmed that corrosion resistance improved due to phase refinement and redistribution of precipitates when FSP was applied.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.288-295
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• 2009

We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.73-73
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• 2009

트렌지스터의 채널 길이가 줄어듦에 따라 절연층으로 쓰이는 $SiO_2$의 두께는 얇아져야 한다. 이에 따라 얇아진 절연층에서 터널링이 발생하여 누설전류가 증가하게 되어 소자의 오동작을 유발한다. 절연층에서의 터널링을 줄여주기 위해서는 High-K와 같은 유전율이 높은 물질을 이용하여 절연층의 두께를 높여주어야 한다. 최근에 각광 받고 있는 High-K의 대표적인 물질은 $HfO_2$, $ZrO_2$와 $Al_2O_3$등이 있다. $HfO_2$, $ZrO_2$와 $Al_2O_3$는 $SiO_2$보다 유전상 수는 높지만 밴드갭 에너지, 열역학적 안정성, 재결정 온도와 같은 특성 면에서 $SiO_2$를 완전히 대체하기는 어려운 실정이다. 최근 연구에 따르면 기존의 High-K물질에 금속을 첨가한 금속산화물의 경우 밴드갭 에너지, 열역학적 안정성, 재결정 온도의 특성이 향상되었다는 결과가 있다. 이 금속 산화물 중 $HfAlO_3$가 대표적이다. $HfAlO_3$는 유전상수 18.2, 밴드캡 에너지 6.5 eV, 재결정 온도 $900\;^{\circ}C$이고 열역학적 안전성이 개선되었다. 게이트 절연층으로 사용될 수 있는 $HfAlO_3$는 전극과 기판사이에 적층구조를 이루고 있어, 이방성 식각인 건식 식각에 대한 연구가 필요하다. 본 연구는 $BCl_3$/Ar 유도결합 플라즈마를 이용하여 $HfAlO_3$ 박막의 식각 특성을 알아보았다. RF Power 700 W, DC-bias -150 V, 공정압력 15 mTorr, 기판온도 $40\;^{\circ}C$를 기본 조건으로 하여, $BCl_3$/Ar 가스비율, RF Power, DC-bias 전압, 공정압력에 의한 식각율 조건과 마스크물질과의 선택비를 알아보았다. 플라즈마 분석은 Optical 이용하여 진행하였고, 식각 후 표면의 화학적 구조는 X-ray Photoelectron Spectroscoopy(XPS) 분석을 통하여 알아보았다.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.131-137
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• 2013

The thin insulator films for organic memory device were made by the plasma polymerization method using the styrene monomer which was not the wet process but the dry process. For the formation of stable plasma, we make an effort for controlling the monomer with bubbler and circulator system. The thickness of plasma polymerized styrene insulator layer was 430 nm, the thickness of the Au memory layer was 7 nm thickness of plasma polymerized styrene tunneling layer was 30, 60 nm, the thickness of pentacene active layer was 40 nm, the thickness of source and drain electrodes were 50 nm. The I-V characteristics of fabricated memory device got the hysteresis voltage of 45 V at 40/-40 V double sweep measuring conditions. If it compared with the results of previous paper which was the organic memory with the plasma polymerized MMA insulation thin film, this result was greater than 18 V, the improving ratio is 60%. From the paper, styrene indicated a good charge trapping characteristics better than MMA. In the future, we expect to make the organic memory device with plasma polymerized styrene as the memory thin film.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.7
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• pp.420-424
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• 2016

In this study, we developed photocatalytic technology to address the emerging serious problem of air pollution through indoor air cleaning. A single layer of $WO_3$ was prepared by using the dry process of general RF magnetron sputtering. At a base vacuum of $1.8{\times}10^{-6}$[Torr], the optical and electrical properties of the resulting thin films were examined for use as a transparent electrode as well as a photocatalyst. The single layer of $WO_3$ prepared at an RF power of 100 [W], a pressure of 7 [mTorr] and Ar and $O_2$ gas flow rates of 70 and 2 sccm, respectively, showed uniform and good optical transmittance of over 80% in the visible wavelength range from 380 [nm] to 780 [nm]. The optical catalyst characteristics of the $WO_3$ thin film were examined by investigating the optical absorbance and concentration variance in methylene blue, where the $WO_3$ thin film was immersed in the methylene blue. The catalytic characteristics improved with time. The concentration of methylene blue decreased to 80% after 5 hours, which confirms that the $WO_3$ thin film shows the characteristics of an optical catalyst. Using the reflector of a CCFL (cold cathode fluorescent lamp) and the lens of an LED (lighting emitting diode), it is possible to enhance the air cleaning effect of next-generation light sources.

• Clean Technology
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• v.13 no.4
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• pp.266-273
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• 2007

The adsorption properties of the activated carbon-based adsorbents were studied to remove COS emitted from $SO_2$ catalytic reduction process on the integrated gasification combined cycle (IGCC) system in this work. Transition metal supported catalysts and mixed metal oxide catalysts were used for the $SO_2$ catalytic reduction. The mechanism of COS produced from the $SO_2$ reduction and the COS concentration s according to the reaction temperature were investigated. In this study, an activated carbon and a modified activated carbon doped with KOH were used to remove the very low concentration of COS effectively. The adsorption rate and the breakthrough time of COS were measured by a thermo gravity analyzer (TGA, Cahn Balance) and a fixed bed flow reactor equipped with GC-pulsed flammable photometric detector (PFPD), respectively. It was confirmed that the COS breakthrough time of the activated carbon doped with KOH was longer than that of an activated carbon. In conclusion, the modified-activated carbon having a high surface area showed a high adsorption rate of COS produced from the $SO_2$ reduction.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.69-76
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• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• Membrane Journal
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• v.30 no.3
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• pp.173-180
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• 2020

As the demand for fossil fuels continues to increase worldwide, carbon dioxide (CO₂) concentration in the air has increased over the centuries. The way to reduce CO₂ emissions to the atmosphere, carbon capture and sequestration (CCS) technology have been developed that can be applied to power plants and factories, which are primary emission sources. According to the climate change mitigation policy, direct air capture (DAC) in air, referred to as "negative emission" technology, has a low CO₂ concentration of 0.04%, so it is focused on adsorbent research, unlike conventional CCS technology. In the DAC field, chemical adsorbents using CO₂ absorption, solid absorbents, amine-functionalized materials, and ion exchange resins have been studied. Since the absorbent-based technology requires a high-temperature heat treatment process according to the absorbent regeneration, the membrane-based CO₂ capture system has a great potential Membrane-based system is also expected for indoor CO₂ ventilation systems and immediate CO₂ supply to smart farming systems. CO₂ capture efficiency should be improved through efficient process design and material performance improvement.

• Korean Journal of Food Science and Technology
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• v.22 no.3
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• pp.272-277
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• 1990

Some additives were applied to improve Yukwa(Popped rice snack) quality and process modifications were tested for cutting down soaking time and application of rice flour. Addition of soaked soybean (3%, w/w) to dough showed higher expansion rate and better physical properties with more acceptable quality by sensory evaluation of Yukwa. Baking powder, modified starch and alcoholic liquor, Mackeali(rice wine, turbid). Soju(distilled liquor) and Yakju(rice wine, clear), were no positive effect on quality of Yukwa but alcoholic liquor gave more fine texture than others. High temprature soaking $(60^{\circ}C)$ of rice for 3 hours which is near gelatinization temperature of rice starch. gave same quality of Yukwa comparing with long time soaking (12 hours) at room temperature. Extention of high temperature soaking (12 hours) did not improve the quality of Yukwa. The 100 mesh of rice flour by dry milling method was better in expansion rate and hardness than 40 and 80mesh but it was worse than ordinary wet milling. It was notified that milling method and milling mechines for Yukwa preparation should be studied in more detail.

• Resources Recycling
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• v.26 no.6
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• pp.84-90
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• 2017

The electro-refining process was performed to recovery high purity copper from low grade copper containing sludge in sulfuric acid. The surface morphologies and roughness of electro-refining copper were analyzed with variation of the type and concentration of organic additives, the best surface morphology was obtained 5 ppm of the gelatin type and 5 to 10 ppm of the thiol type organic additive. The crude metal consisted of copper with 86.635, 94.969 and 99.917 wt.%, several impurity metals of iron, nickel, cobalt and tin by pyro-metallurgical process. After electro-refining process, the purity of copper increases to 3N or 4N grade. The impurity concentrations and copper purities of copper crude metals, electrolyte and electro-refining copper were analyzed using ICP-OES, the electro-refining time and purity of copper crude metal to recover 4N grade copper were deduced.