• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.189-197
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korea Concrete Institute
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• v.20 no.3
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• pp.271-282
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• 2008

Specific joint devices composed of end-plates and through bolts are under development to assemble steel beams to PC columns efficiently by dry construction method for the PCS structural system, of which major structural components are precast concrete columns and steel beams. Seismic performance of the joint devices had been evaluated by experimental tests in the previous studies and it was showed that all the performance requirements regarding to strength deterioration, stiffness degradation and energy dissipation capacity were satisfied to the criteria of ACI requirements, but the initial stiffness was not. In order to find out possible causes of the insufficient rigidity of the joint devices and provide the proper measures to improve the performance of the joint accordingly, numerical analyses were carried out by using ABAQUS. Parameters, such as thickness of neoprene pad, conditions of surface between PC column and end-plate, magnitude of pretension forces of through bolts, stiffness of end-plate were taken into consideration. As the result, it was found that the rigidity of the PCS system was negatively affected by the magnitude of initial gaps between PC columns and end-plates, and insufficient stiffness of neoprene fillers and end plates. In order to improve the initial stiffness performance of the joints, measures such as increase of the magnitude of pretension forces on through bolts and increase of the stiffness of end-plate by reducing the bolt pitch and providing adequate stiffeners are recommended.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.6
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• pp.71-77
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• 2014

In this paper, we investigated the effects of high-energy electron beam irradiation (HEEBI) on the optical transmittance of InGaZnO (IGZO) films grown on transparent Corning glass substrates, with a radio frequency magnetron sputtering technique. The IGZO thin films deposited at low temperature were treated with HEEBI in air at room temperature (RT) with an electron beam energy of 0.8 MeV and doses of $1{\times}10^{14}-1{\times}10^{16}electrons/cm^2$. The optical transmittance of the IGZO films was measured using an ultraviolet visible near-infrared spectrophotometer (UVVIS). The detailed estimation process for separating the transmittance of HEEBI-treated IGZO films from the total transmittance of IGZO films on transparent substrates treated with HEEBI is given in this paper. Based on the experimental results, we concluded that HEEBI with an appropriate dose of $10^{14}electrons/cm^2$ causes a maximum increase in the transparency of IGZO thin films. We also concluded that HEEBI treatment with an appropriate dose shifted the optical band gap ($E_g$) toward the lower energy region from 3.38 to 3.31 eV. This $E_g$ shift suggested that HEEBI in air at RT with an appropriate dose acts like a thermal annealing treatment in vacuum at high temperature.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.16 no.4
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• pp.212-222
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• 2011

Estuaries have been used competitively and exploited for the past decades in Korea. To preserve the environment of the estuaries from the integrated perspective, new policies have started to change such exploitative development in 2000s. Due to the poor knowledge-base, however, there has been a lack of support system which enables to execute such policies effectively. The present study was conducted to figure out the limits of the estuarine management research projects in Korea, which is being performed to overcome these limitations. It was studied through Gap Analysis between domestic and foreign advanced practices as well as Analytical Hierarchy Process on expert survey in terms of the three aspects: how well the estuarine management research projects in Korea meets the demands of policy making and administration; raises the awareness of citizens about the merit of environmental preservation; and establishes knowledge-based support system. This project turned out to reflect adequately the development of programs for building estuarine management systems. But consideration of other ministries was relatively scarce. But the contents which directly support community-based activities and educational programs to improve citizens' awareness were judged to be insufficient. According to the results of Gap Analysis, research about the structure and function of estuarine ecosystems, which can support to develop policy alternatives in detail, was relatively more necessary. Therefore, to support estuarine policy management effectively, the development of a realistic plan, which can overcome fundamental issues inherent in the Korean environmental management system and the limitation of the estuarine management research projects in Korea itself, is needed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.646-651
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• 2018

This paper reports that the electronic properties at a $P3HT/TiO_2$ interface associated with exciton dissociation and transport can be tailored by the insertion of a graphene quantum dot (GQD) layer. For donor/acceptor interface modification in an $ITO/TiO_2/P3HT/Al$ photovoltaic (PV) device, a continuous GQD film was prepared by a sonication treatment in solution that simplifies the conventional processes, including laser fragmentation and hydrothermal treatment, which limits a variety of component layers and involves low cost processing. The high conductivity and favorable energy alignment for exciton dissociation of the GQD layer increased the fill factor and short circuit current. The origin of the improved parameters is discussed in terms of the broad light absorption and enhanced interfacial carrier transport.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.596-601
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• 2020

Silicon carbide is considered a potentially useful material for high-temperature electronic devices because of its large band gap energy and p-type or n-type conduction that can be controlled by impurity doping. Accordingly, the thermoelectric properties of -SiC powder prepared by refined diatomite were investigated for high value-added applications of natural diatomite. -SiC powder was synthesized by a carbothermal reduction of the SiO₂ in refined diatomite using carbon black. An acid-treatment process was then performed to eliminate the remaining impurities (Fe, Ca, etc.). n-Type semiconductors were fabricated by sintering the pressed powder at 2000℃ for 1~5h in an N2 atmosphere. The electrical conductivity increased with increasing sintering time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The carrier compensation effect caused by the remaining acceptor impurities (Al, etc.) in the obtained -SiC had a deleterious influence on the electrical conductivity. The absolute value of the Seebeck coefficient increased with increasing sintering time, which might be due to a decrease in the stacking fault density accompanied by grain or crystallite growth. On the other hand, the power factor, which reflects the thermoelectric conversion efficiency of the present work, was slightly lower than that of the porous SiC semiconductors fabricated by conventional high-purity -SiC powder, it can be stated that the thermoelectric properties could be improved further by precise control of an acid-treatment process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.4
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• pp.319-324
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• 2016

Soils with various particle sizes generally show good shear strength. Some soils have a relatively strong resistance to shear failure in spite of narrow particle distribution, such as gap grading. Based on this example, it can be inferred that appropriate arrangements of particle size in soils might result in an increase in shear strength. This study investigates the strength variation of soils with respect to the particle size distribution. Gap, well, and uniform graded soils were prepared with a desired ratio, and a wide range of direct shear tests were done using the prepared samples. The test results show that there is a strong relationship between the particle size ratio and internal frictional angle. Gap graded soil has a greater frictional angle than a well-graded sample, even when specimens have the same maximum particle size, which is also the case for the uniform grade specimen. The results have potential for developing a methodology for stronger soils through a simple manipulation of particle size distribution.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.173-177
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• 2010

Thermal stabilizing effect of $Yb^{3+},\;Er^{3+}$ codoping into $TiO_2$ powder prepared by sol-gel method and its upconversion characteristics were analyzed. The effect of $TiO_2:Yb^{3+},\;Er^{3+}$ ions on crystallinity and phase transition was studied by X-ray diffraction (XRD). The change of band-gap energy induced from Yb and Er codoping was analyzed by UV-Vis. The band-gap energy of $TiO_2$ have been slightly narrowed by $Yb^{3+},\;Er^{3+}$ codoping, which indicated that the $Yb^{3+},\;Er^{3+}$ ions can enhance the photo-catalytic property of $TiO_2$. green and red up-conversions of $Yb^{3+}$ and $Er^{3+}$ co-doped $Y_2O_3:Yb^{3+},\;Er^{3+}$ phosphor were analyzed by PL equipped with 980 nm laser.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.15-20
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• 2010

In this study, AZO (Al: 3 wt%) thin films have been prepared on PES Plastic substrates at various working pressure (5~20 mTorr), $O_2$ gas flow rate(0~3%) and the fixed substrate temperature of 200 f by using the RF magnetron sputtering and their optical and electrical properties have been studied. The XRD measurement shows that AZO thin films exhibit c-axis preferred orientation. From the results of AFM measurements, it is known that the lowest surface roughness (3.49 nm) is obtained for the AZO thin film fabricated at 5 mTorr of working pressure and 3% of $O_2$ gas flow rate. The optical transmittance of AZO thin films is measured as 80% in the visible region. We observe that the energy band gap of AZO thin films increases with decreasing the working pressure and the $O_2$ gas flow rate. This phenomenon is due to the Burstein-Moss effect. Hall measurement shows that the maximum carrier concentration ($2.63\;{\times}\;10^{20}\;cm^{-3}$) and the minimum resistivity ($4.35\;{\times}\;10^{-3}\;{\Omega}cm$) are obtained for the AZO thin film fabricated at 5mTorr of working pressure and 0% of $O_2$ gas flow rate.

• Korean Journal of Optics and Photonics
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• v.16 no.2
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• pp.168-173
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• 2005

Ag-doped $TiO_2$ thin films were prepared by RF magnetron co-sputtering method, and their physical and chemical properties were examined as a function of calcination temperature. XRD results showed that the crystallite size of Ag-doped films was smaller than that of the $TiO_2$ thin films. SEM results showed that the particle size of $Ag/TiO_2$ film was smaller and more uniform than pure $TiO_2$ film. The films had high transparency in the visible range. The films calcined at $600^{\circ}C$ were the anatase phase, and the films calcined at $900^{\circ}C$ were a mixture of anatase and rutile phases. The absorption edge of films calcined at $900^{\circ}C$ was red-shifted. This is due to the augmented absorption resulting from the phase transformation from anatase to rutile phase. And the transmittance of films decreased by the light scattering and absorption in the films. Photocatalytic activity of $Ag/TiO_2$ thin films was higher than that of the pure $TiO_2$ thin films.