• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.446-446
• /
• 2009

표면 패시베이션 기술로 이용되는 수소화된 실리콘 질화막은 제조원가의 절감을 위한 실리콘 기판재료의 두께 감소에 따른 특성상의 문제점을 해결하기 위해 중요한 영향을 미치는 요소이다. 실리콘 질화막은 강한 기계적 강도, 우수한 유전적 특성, 수문에 의한 부식과 유동적 이온에 대한 우수한 저항력 때문에, 반도체 소자 산업에서 널리 사용되고 있다. 수소화된 실리콘 질화막은 반사방지 특성과 함께 표면 패시베이션의 질을 향상시킬 수 있다. 굴절률 1.9 ~ 2.3 범위에서 쉽게 변화 가능한 수소화된 실리콘 질화막은 굴절률 1.4 ~ 1.5 사이의 열적 산화막 보다 효과적인 반사방지막이다. 수소화된 실리콘 질화막을 사용한 태양전지에서는 효율을 높이기 위해서 기판 표면에서의 케리어 재결합이 억제되어져야한다. 또한, 수소화된 실리콘 질화막은 최적화된 두께와 굴절률을 가져야한다. 본 연구에서는 고효율 태양전지에 적용하기 위해 반송자 수명이 향상된 수소화된 실리콘 질화막을 플라즈마 화학 기상 증착법을 이용하여 증착하였다. 박막은 $250^{\circ}C\;{\sim}\;450^{\circ}C$에서 증착되었으며 증착된 박막은 1.94 to 2.05 굴절률 값을 가지고 있다. 반송자 수명을 증가시키기 위해 $650^{\circ}C\;{\sim}\;950^{\circ}C$에서 어닐링 하였고 반송자 수명을 측정하여 패시베이션 특성을 분석하였다. 수소화된 실리콘 질화막은 $850^{\circ}C$의 어닐링 온도와 굴절률 2.0 조건에서 가장 좋은 반송자 수명을 나타냈다.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.4
• /
• pp.667-672
• /
• 1998

Pyroelectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ ceramics prepared by the columbite precursor method have been investigated as a function of the sintering temperature in the range of $1000^{\circ}C$ to $1250^{\circ}C$. The $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ ceramics show typical relaxor ferroelectric behavior. The optimum condition for obtaining samples with high densities and improved pyroelectric properties occur at a sintering temperature of $1250^{\circ}C$ and sintering times of 2 hours. The $Pb(Mg_{1/3}Nb_{2/3}O_3-PbTiO_3$ ceramics show the possibility for pyroelectric sensors with pyrostat.

• Journal of the Korean Geotechnical Society
• /
• v.15 no.5
• /
• pp.193-204
• /
• 1999

Particle crushing is an important and essential factor in interpreting the strength and deformation properties of granular materials in the case of geotechnical problems related to soil crushability. As a recent field problem, the exploitation of offshore oil reserves in tropical and sub-tropical coastal shelf areas has shown that the behaviour of soils containing carbonates is markedly different from predominantly silica sands. In this study, as a first step in making a mechanical framework of granular materials incorporating the soil crushability, single particle fragmentation tests were carried out on four different types of sands in order to clarify the characteristics of the single particle fragmentation strength as related to soil crushability. The single particle strength was considered with the influence of the particle shapes, the amount of mineral components and the particle sizes. The soil particle strength corresponding $D_{50}$ of soil distribution curve has shown the lower value, the more the carbonate component and the more angular the particle shape.

• Journal of Korean Society of Forest Science
• /
• v.89 no.5
• /
• pp.645-654
• /
• 2000

The aim of this study was to described the genetic structure of Eleutherococcus senticosus in Korea. We investigated 10 patches, which are eight Korean patches and two foreign patches come from Russia and China growing at Korean habitat, using ISSR(inter-simple sequence repeats) markers. In ISSR PCR, the overall percentage of polymorphic ISSR amplicons was 76% and the mean number of amplicons per ISSR primer was 11.5, which were higher than the RAPD results for the some cultivars collected in Korea(Kim et al., 1998) ; 57% and 5.7, respectively. So ISSR markers provide more powerful tool than RAPD markers for the investigation of genetic variation in E. senticosus. There are relatively high genetic variation among patches as 62.8%, but low variation within eight Korean patches. Such pattern of genetic variation, which is not ordinary in other tree species, may be result from the narrow and limited habitats and the asexual reproduction of this species at the natural stands in Korea. Although the small sample size in this study seemed to be resulted in the high genetic variation among patches, the overall genetic interpretation of this study might not be much affected on the basis of the characteristics of the distribution and the reproduction system of E. senticosus. Analysis of genetic distance between all pairs of the patches did not reveal any trends with regard to geographic distance, which was confirmed by the results obtained from AMOVA(analysis of molecular variance) and PCA(principal component analysis). These results suggest that, in addition to the preservation of the natural stands, the conservation of larger number of patches with small number of individuals per patch is more effective for the ex situ conservation and for maintaining the genetic diversity of E. senticosus in Korea than smaller patches with large number of individuals.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.67 no.4
• /
• pp.543-548
• /
• 2018

Ferroelectric $Bi_4Ti_3O_{12}$ films were deposited on $SrTiO_3(100)$ and Si(100) substrate by using conductive $SrRuO_3$ films as underlayer, and their ferroelectric and electrical properties were investigated depending on crystal structure and orientation. C-axis oriented $Bi_4Ti_3O_{12}$ films were grown on well lattice-matched pseudo-cubic $SrRuO_3$ films deposited on $SrTiO_3(100)$ substrate, while random-oriented polycrystalline $Bi_4Ti_3O_{12}$ films were grown on $SrRuO_3$ films deposited on Si(100) substrate. The random-oriented polycrystalline film showed a good ferroelectric hysteresis property with remanent polarization ($P_r$) of $9.4{\mu}C/cm^2$ and coercive field ($E_c$) of 84.9 kV/cm, while the c-axis oriented film showed $P_r=0.64{\mu}C/cm^2$ and $E_c=47kV/cm$ in polarizaion vs electric field curve. The c-axis oriented $Bi_4Ti_3O_{12}$ film showed a dielectric constant of about 150 and lower thickness dependence in dielectric constant compared to the random-oriented film. Furthermore, the c-axis oriented $Bi_4Ti_3O_{12}$ film showed leakage current lower than that of the polycrystalline film. The difference of ferroelectric properties in two films was explained from the viewpoint of depolarization effect due to orientation of spontaneous polarization and layered crystal structure of bismuth-base ferroelectric oxide.

• Journal of the Korean Ceramic Society
• /
• v.42 no.9 s.280
• /
• pp.624-630
• /
• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.3
• /
• pp.157-161
• /
• 2017

$(1-x)Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3-xLaFeO_3$ ceramics were fabricated using a solid state reaction method. The microstructural, ferroelectric and piezoelectric properties were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM), and polarization hysteresis loops (P-E). XRD results indicated that BNKT ceramic crystal structure modified by $LaFeO_3$ was transformed from a ferroelectric tetragonal to a non-polar pesudo-cubic phase with increased $LaFeO_3$ content. The improved piezoelectric properties resulted from the addition of $LaFeO_3$ up to 3 mol%. The $LaFeO_3$ 3mol% sample showed markedly improved piezoelectric and strain behaviors in comparison with pure BNKT ceramic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.12
• /
• pp.1092-1098
• /
• 2006

The influence of the concentration of precursor solution and the number of solution coatings on the densification of the $Pb(Zr_xTi_{1-x})O_3$ (PZT) thick films was studied. PZT powder and PZT precursor solution were prepared by3 sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The composition of powder and precursor solution were PZT(70/30) and PZT(30/70), respectively. The PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 to 2.0 mol/L[M] and the number of coating was repeated from 0 to 6. The XRD patterns of all PZT thick films shelved typical perovskite polycrystalline structure. The porosity of the thick films was decreased with increasing the number of coatings and 6-time coated films with 1.5 M showed the dense microstructure and thickness of about $60{\mu}m$. The relative dielectric constant of the PZT thick film was increased with increasing the number of solution coatings and the thick films with 1.5 M, 6-time coated showed the 698. The remanent polarization the 1.5 M and 6-time coated PZT thick films was $38.3{\mu}C/cm^2$.

• Journal of the Korean Ceramic Society
• /
• v.39 no.8
• /
• pp.750-757
• /
• 2002

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$ thin films have been prepared by spin coating method using photosensitive sol solution. Strontium ethoxide, tertramethylheptanedionato bismuth and tantalum ethoxide were used as starting materials. As UV exposure time to the SBT thin film increased, the UV absorption peak intensity of metal ${\beta}$-diketonate decreased due to reduced solubility by M-O-M bond formation. Solubility difference by UV irradiation on SBT thin film allows to obtain a fine patterning of thin film. Also, The ferroelectric properties of the UV irradiated SBT thin films were superior to those of the no-UV irradiated films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.168-171
• /
• 2003

Bismuth layered structure, Cerium-substituted $Bi_4Ti_3O_{12}$ ($(Bi,Ce)_4Ti_3O_{12}$) thin films were prepared on the $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition method. We investigated the Ce-subsitituted effect on the grain orientation and ferroelectric properties. $Ce^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of BTO decreased the deeree of c-axis orientation and increased the remanent polariation (2Pr). The structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The $(Bi,Ce)_4Ti_3O_{12}$ (BCT) thin films, which were annealed $700^{\circ}C\;and\;800^{\circ}C$ for 10min and 30min, showed a perovskite phase and dense microstructure. As the thickness of the BCT film was decresed that the ferroelectric properties of the BCT thin films were good.