• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.21-24
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• 2005

This work is to present each properties and the interfacial characterization between PZT layer and LSMO layer of PZT/LSMO/Pt. LSMO thin film grown by KrF(248 nm) excimer lasers are used in pulsed in pulsed laser deposition(PLD). PZT coposites thin films were deposited by spin coating using a commercial resist spinner. LSMO thin film by deposition oxygen pressure 125 mtorr have rhombohedral structure on Pt(111) substrate. The PZT/LSM/Pt pre-orientate to [111] direction. The final thin films were shown that magnetic and electric property was typical value, respective. We report that the lattice between the PZT/LSMO thin film and the substrate plays a very important role and may control to another effects.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.10 s.340
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• pp.1-8
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• 2005

In this paper, a FRAM design style based on PMOS-gating cell structure is described. The memory cell consists of a PMOS access transistor and a ferroelectric capacitor. Its plate is grounded. The proposed scheme employs three novel operating methods: 1) $V_{DD}$ precharged bitline, 2) negative-voltage wordline technique and 3) negative-pulse restore, Because this configuration doesn`t need the on-pitch plate control circuitry, it is effective in realizing cost-effective chip sizes. Implementation for a 2.5-V, 1-Mb FRAM prototype design in a $0.25-{\mu}m$, triple-well technology shows a chip size of $3.22\;mm^{2}$, an access time of 48 ns and an active current of 11 mA. The cell efficiency is 62.52 $\%$. It has gained approximately $20\;\%$ improvement in the cell array efficiency over the conventional plate-driven FRAM scheme.

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.240-243
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• 1999

Piezoelectric properties of O.9PMN-0.1PT relaxor ferroe1ectrics were investigated in the temperature range of $-40^{\circ}C~$100^{\circ}C$. After poled at $-40^{\circ}C$, electro-mechanical properties of the samples were measured by resonance antiresonance method. As the resonance behavior was shown in impedance spectrum obtained below $0^{\circ}C$, it can be c conduded that 0.9PMN-0.1PT is bona-fide ferroelectrics below the phase transition temperature. It is very noteworthy that electro-mechanical resonance occurs at the temperatures far above the phase transition temperature. It is coneluded that ferroelectricity in 0.9PMN-0.1PT relaxor were verified far above the phase transition temperature.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.9
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• pp.1717-1723
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• 2007

In this study , quasi-MFISFET (Metal-Ferroelectric-Insulator-Semiconductor FET) devices are fabricated using PLZT(10/30/70), PLT(10), PZT(30/70) thin film and their drain current properties are investigated. It is found that the drain current of quasi-MFISFET is directly influenced by the polarization strength of ferroelectric thin fan. Also, when the gate voltages are ${\pm}5\;and\;{\pm}10V$, the memory windows are 0.5 and 1.3V, respectively. It means that the memory window is changed with the variation of coercive voltage generated by the voltage applied on ferroelectric thin film. The electric field and the leakage current with time delay of PLZT(10/30/70) thin lam are measured to investigate the retention property of MFISFET device. Some material parameters such as current density constant, $J_{ETO}$, electric field dependent factor K and time dependent factor m are obtained. The variation of charge density with time is quantitatively analyzed by using the material parameters.

• Applied Chemistry for Engineering
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• v.22 no.3
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• pp.249-254
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• 2011

A nonthermal plasma reactor in conjunction with a tubular type with a ferroelectric (high-dielectric ceramic) pellet layer was designed and constructed. $SrBiTaO_9$ (SBT) pellets with 2.0 mm in diameter were held within the tube arrangement by two metal mesh electrodes (20 mm separation) connected to a high-voltage AC power supply. The dielectric constant of SBT pellets was 150 at room temperature and 500 at curie temperature ($335^{\circ}C$). The generation rate of ozone in the plasma reactor almost linearly increased with increasing applied voltage. In the case of the plasma reactor packed with SBT pellets the generation rate of ozone sharply increased at the applied voltage more than 20 kV. The ozone generation rate at the negative corona discharge was higher than that of the positive corona discharge. However, the destruction efficiency of toluene and methylene chloride was not increased in proportion to ozone concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.141-147
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• 2024

The measurement of strain under an electric field has been widely employed to comprehend the fundamental principles of electro-mechanical responses in ferroelectric, piezoelectric, and electrostrictive materials. In particular, understanding the strain properties of piezoelectric materials in response to electrical stimulation is crucial for researching and developing components such as piezoelectric actuators, acoustic devices, and ultrasonic generators. This tutorial paper introduces the components and operational principles of the linear variable differential transducer (LVDT), a widely used displacement measurement device in various industries. Additionally, we present the configuration of an experimental setup using LVDT to measure the strain characteristics of ferroelectric, piezoelectric, or electrostrictive materials under the application of an electric field. This paper includes simple measurement results and analyses obtained through the LVDT experimental setup, providing valuable information on research methods for the electro-mechanical interactions of various materials.

• Journal of the Korean Ceramic Society
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• v.39 no.1
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• pp.92-98
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• 2002

To investigate the electrode structural effect on the ferroelectric electron emission, the electric field distribution in a 2-dimensional structure was calculated as a function of upper electrode diameter, and the switching charge density and emission charge were measured simultaneously. The simulation of the electric field distribution showed that an asymmetric electrode structure could cause a stray field on the bare surface of the ferroelectric cathode near the edge of upper electrode. The distance of stray field from the electrode edge increased with increasing ferroelectric thickness, but it did not depend on the upper electrode diameter. The switching charge density increased more on the cathode with smaller upper electrode diameter. This was attributed to the stray field on the bare ferroelectric surface near the electrode edge, because the stray field for the asymmetric ferroelectric cathode enhanced polarization switching near the electrode edge. From the switching charge density, the distance of stray field from the electrode edge was calculated as about 11-14${\mu}{\textrm}{m}$. The threshold voltage of electron emission was 61-68 kV/cm, which was almost 3 times lager than the coercive voltage. The threshold voltage was not determined just by coercive voltage, but by strength and distance of the stray-field, which largely depended on the geometrical structure of ferroelectric cathode.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.391-398
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• 1996

In order to understand the electrostrictive behavior of Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT) solid solutions the dielectric constants and the electric-field-induced strains in (1-x)PMN-xPT (x=0.0-0.4) were investigated in the temperature range -5$0^{\circ}C$-20$0^{\circ}C$. Powder of (1-x)Pb(Mg2/3Nb2/3)O3-xPbTiO3 (x=0.0, 0.1, 0.2, 0.3, 0.35, and 0.4) were prepared from the oxide forms of Pb, Mg, Nb and Ti via a columbite precursor method As the amount of PbTiO3 increases the temperature of maximum dielectric constant(T$\varepsilon$max) increases and the phase transition become less diffusive. The strain maximum occurs only when the diffuse phase transition occurs from rhombohedral to cubic or rhombohedral to tetragonal as in x=0.1-0.35 The strains monotonically decrease with temperature in the materials in which phase transition occurs from tetragonal to cubic as in x=0.4.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.576-581
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• 2005

In this paper. the a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. High k gate dielectric is required for on-current, threshold voltage and breakdown characteristics of TFT Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_3N_4$. Ferroelectric increases on-current and decreases threshold voltage of TFT and also ran improve breakdown characteristics.$SrTiO_4$ thin film is deposited by e-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C\~600^{\circ}C$. Dielectric constant of ferroelectric is about 60-100 and breakdown field is about IMV/cm. In this paper, the TFT using ferroelectric consisted of double layer gate insulator to minimize the leakage current. a-SiN:H, a-Si:H (n-type a-Si:H) are deposited onto $SrTiO_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. In this paper, TFR using ferroelectric has channel length of$8~20{\mu}m$ and channel width of $80~200{\mu}m$. And it shows that drain current is $3.4{\mu}A$at 20 gate voltage, $I_{on}/I_{off}$ is a ratio of $10^5\~10^8,\;and\;V_{th}$ is$4\~5\;volts$, respectively. In the case of TFT without having ferroelectric, it indicates that the drain current is $1.5{\mu}A$ at 20gate voltage and $V_{th}$ is $5\~6$ volts. If properties of the ferroelectric thin film are improved, the performance of TFT using this ferroelectric thin film can be advanced.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.11-16
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• 2002

In this study, the dry etching characteristics of $SrBi_2Ta_2O_9$ (SBT) thin films were investigated by using ICP-RIE (inductively coupled plasma-reactive ion etching). The etching damage and degradation were analyzed with XPS (X-ray photoelectron spectroscopy) and C-V (Capacitance-Voltage) measurement. The etching rate increased with increasing the ICP power and the capacitively coupled plasma (CCP) power. The etch rate of 900$\AA$/min was obtained with 700 W of ICP power and 200 W of CCP power. The main problem of dry etching is the degradation of the ferroelectric material. The damage-free etching characteristics were obtained with the $Ar/C1_2/CHF_3$ gas mixture of 20/14/2 when the ICP power and CCP power were biased at 700 W and 200 W, respectively. The experimental results show that the dry etching process with ICP-RIE is applicable to the fabrication of the single transistor type ferroelectric memory device.