• Journal of the Semiconductor & Display Technology
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• v.3 no.1
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• pp.27-30
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• 2004

In this work, the variation of the sidewall profile of a thick photoresist on the wavelength and proximity gap was investigated. PMER P-LA900PM, DNQ (DiazoNaphthoQuinone) novolac type photoresist, is used for experiments. The calculated results agreed well with the experimental results.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.103-108
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• 1997

Silicon field emitter arrays (FEAs) have been fabricated by a novel method employing a two-step tip etch and a spin-on-glass (SOG) etch-back process using double layered thermal/tetraethylortho-silicate (TEOS) oxides as a gate dielectric. A partial etching was performed by coating a low viscous photo resist and $O_2$ plasma ashing on order to form the double layered gate dielectric. A small gate aperture with low gate leakage current was obtained by the novel process. The hight and the end radius of the fabricated emitter was about 1.1 $\mu\textrm{m}$ and less than 100$\AA$, respectively. The anode emission current from a 256 tips array was turned-on at a gate voltage of 40 V. Also, the gate current was less than 0.1% of the anode current.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.207-213
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• 1997

A field effect transistor(FET) type dissolved carbon dioxide($pCO_{2}$) sensor with a double layer structure of hydrogel membrane and $CO_{2}$ gas permeable membrane was fabricated by utilizing a $H^{+}$ ion selective field effect transistor(pH-ISFET) with Ag/AgCl reference electrode as a base chip. Formation of hydrogel membrane with photo-crosslinkable PVA-SbQ or PVP-PVAc/photosensitizer system was not suitable with the photolithographic process. Furthermore, hydrogel membrane on pH-ISFET base chip could be fabricated by photolithographic method with the aid of N,N,N',N'-tetramethyl othylenediarnine(TED) as $O_{2}$ quencher without using polyester film as a $O_{2}$ blanket during UV irradiation process. Photosensitive urethane acrylate type oligomer was used as gas permeable membrane on top of hydrogel layer. The FET type $pCO_{2}$ sensor fabricated by photolithographic method showed good linearity (linear calibration curve) in the range of $10^{-3}{\sim}10^{0}\;mol/{\ell}$ of dissolved $CO_{2}$ in aqueous solution with high sensitivity.

• Membrane Journal
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• v.2 no.2
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• pp.112-121
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• 1992

최근 십여년동안 자원, 에너지, 환경의 모든 면에서 기능성막의 역할이 증대해짐에 따라 기능성막에 대해 큰 관심이 모아지고 있다. 기존하는 기능성막의 소재면에서 볼 때 고분자막(고체막), 액체막으로 대별할 수 있으며, 이들의 경우 해수의 담수화, 원료 및 제품의 분리, 농축, 정제, 회수공정 또한 석유화학분야에서 고효율$\cdot$고선택성 기체혼합물 분리, 산업용 폐수처리분야 뿐 만 아니라, 태양에너지의 효과적인 이용, 전도성, 감광성, 광학특성막 등을 이용한 각종 센서제조 등 실로 광범위한 분야에서 응용되어지고 있다. 기능성막의 관점에서 볼 때, 고기능$\cdot$고효율$\cdot$고선택성을 가지는 막은 생태계에 존재하는 생체막이 가장 이상적이라 할 수 있다.

• ETRI Journal
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• v.13 no.4
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• pp.10-24
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• 1991

본 연구에서는 기상 성장법 (VPE : vapor phase epitaxy) 으로 성장된 $n^+(Si:2X10^18cm^-3)$/$n(Si:1x10^17cm^-3)$구조의 시편 위에 SiN 과 감광막 등 식각 선택비가 서로 다른 두 물질로 보호된 소스와 드레인 사이의 게이트 형성 영역을 건식식각과 습식식각방법으로 리세스 에칭을 하여 형성한 후, 게이트를 자기정렬하여 형성시킬 수 있는 이중 리세스공정 기술을 개발하였고, 이를 통하여 전력용 MESFET 소자를 제작하였다.게이트 형성부분의 wide recess 폭은 건식식각으로 SiN을 측면식각(lateral etch) 함으로써 조절하였는데, 이 방법을 사용하여 MESFET 소자의 임계전압을 조절할 수 있고, 동시에 소스-드레인 항복전압을 30V 까지 향상시킬 수 있었다. 소스-드레인 항복전압은 wide recess 폭이 증가함에 따라, 그리고 게이트 길이가 길어짐에 따라 증가하는 경향을 보여주었다. 이 방법으로 제작한 여러종류의 MESFET 중에서 게이트 길이가 $2\mum$이고 소스-게이트 간격이 $3 \mum$인 MESFET의 전기적 특성은 최대 트랜스컨덕턴스가 120 mS/mm, 게이트 전압이 0.8V 일 때 포화드레인전류가 170~190mA/mm로 나타났다. 제작된 MESFET이 ($NH_4$)$_2$$S_x$ 용액에 담금처리될때 , 공기중에 노출된 게이트-드레인 사이의 n-GaAs층의 표면이 유황으로 보호되어 공기노출에 의한 표면 재산화막의 형성이 억제되었기 때문으로 사료된다.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.3
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• pp.19-25
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• 1999

The photoreceptor films with double layer structure were prepared by the plasma polymerization and the dip-coating method. The blocking layer was coated with A1$_2$O$_3$ on the Al substrate and the charge generation layer was formed by H$_2$ phthalocyanine (H$_2$Pc). Poly 9-Vinylcarbazole was used as a charge transport layer. H$_2$Pc film prepared by the vacuum evaporation had absorption peaks on 613.6[nm] and 694.8[nm], and H$_2$Pc film prepared by the plasma polymerization had a dull peaks between 600 and 700[nm]. The surface potential of PVCz increased with increasing the applied voltage and the thickness of PVCz. The dark decay characteristic, the light decay time and the residual time increased with increasing the thickness of PVCz. The surface charge of PVCz of 15[${\mu}{\textrm}{m}$] thickness was 134[nc/$\textrm{cm}^2$] at the surface potential of -600[V] and the charge generation efficiency of H$_2$Pc was 0.034.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.22-23
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• 2006

A process for removal of photoresist(PR) m semiconductor manufacturing using water vapor with ozone is presented. For the realization of the ozone/vapor mixture process, high concentration ozone generator and process facilities have developed. As a result of the silicon wafer PR strip test, we confirmed the high efficiency PR strip rates of 400nm/mm or more at the ozone concentration of 16wt%/$O_2$. The ozone/vapor mixture process is more effective than the ozonized water Immersion process.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.198-204
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• 1996

Electron beam lithography is one of the importnat technologies which can delineate deep submicron patterns. REcently, electron beam lithography is being applied in delineating the critical layers of semiconductor device fabrication. In this paper, we present a development simulation program for electron beam lithography and study the development profiles of resist when resist is exposed by the electron beam. Experimentally, the development parameter of positive and negative resists are measured and the data is applied to input parameter of the simulation program. Also simulation results are compared of the process results in the view of resist profiles. As a result, for PMMA and SAL 601 resist, the trend of simulation to the values of process parameters agree with real process results very well, so that the process results can be predicted by the simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1143-1148
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• 2004

In this study, photoresist stripping in semiconductor or LCD (liquid crystal display) fabrication processes using DIO, was investigated. In order to obtain the high PR stripping efficiency of DIO. we have developed new ozone-generating system with high ozone concentration and ozone-resolving system with high contact ratio. In this study, we obtained ozone gas concentrations of 11 % by new ozone-generating system, ozone-resolving efficiency of 99.5 % and maximum solubility of 130 ppm in deionized water. We applied the newly designed equipments to photoresist stripping processes and obtained similar results to SPM(sulfuric-peroxide mixture) process characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.977-982
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• 2007

The realization of the photoresist(PR) removal method with vaporized water and ozone gas mixture has been studied for the LCD TFT array manufacturing. The developed PR stripper uses the water boundary layer control method based on the high concentration ozone production technology. We develop the prototype of PR stripper and experiment to find the optimal process parameter condition like as the ozone gas flow/concentration, process reaction time and thin boundary layer formation. As a results, we realize the LCD PR strip rate over the 0.4 ${\mu}m/min$ and this PR removal rate is more than 5 times higher than the conventional immersion type ozonized water process.