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Synthesis and Antibacterial Activity of New Tetrazole Derivatives (새로운 Tetrazole유도체의 합성과 항균활성)

  • Mulwad, V.V.;Pawar, Rupesh B;Chaskar, Atul C
    • Journal of the Korean Chemical Society
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    • v.52 no.3
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    • pp.249-256
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    • 2008
  • 3-Acetyl/Formyl 4-hydroxy-2H(1)-benzopyran-2-one on treatment with malonitrile and ethyl cyanoacetate yielded 1,1-dicyano-2-[4/-hydroxy-2/H(1)-benzopyran-2/-one-3/-yl] ethene/propene 2a-h and ethyl-2-cyano-3-[4/-hydroxy-2/H (1)-benzopyran-2/-one-3/-yl] propenoate/butenoate 3a-h respectively. The 1,3 dipolar reaction of 2a-h with NaN3 gave the tetrazole derivative 4a-h. 3a-h on cyclization with PPA gave 3-cyano-2H,5H-pyrano [3, 2-c] benzopyran-2,5-diones 5a-h which on 1,3 dipolar reaction with NaN3 to gave 3-(1/H-tetrazol-5/-yl)-2H,5H-pyrano[3, 2-c] benzopyran-2,5-diones 6a-h. The structures of the compounds have been established on the basis of the spectral and analytical data. All the compounds were screened for their antimicrobial activities and have been found to exhibited significant antibacterial activities. Compounds 2h and 4h showed the activity 50g/mL.

Synthesis and Molecular Structures of $2-SC_4H_3CH=NN(H)C_6H_5 and (GaMe_2)_2(2-SC_4H_3CH=NNC_6H_5)_2$ ($2-SC_4H_3CH=NN(H)C_6H_5$$(GaMe_2)_2(2-SSC_4H_3CH=NNC_6H_5)_2$의 합성과 분자 구조)

  • 박권일;김용기;조성일
    • Korean Journal of Crystallography
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    • v.11 no.1
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    • pp.46-51
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    • 2000
  • The molecular structures of 2-SC₄H₃CH=NN(H)C/sub 6/H/sub 5/(C/sub 11/H/sub 10/N₂S) and (GaMe₂)₂(2-SC₄H₃CH=NNC/sub 6/H/sub 5/)₂(C/sub 26/H/sub 30/Ga₂N₄S₂) have been determined by X-ray diffraction. Crystallographic data for 2-SC₄H₃CH=NN(H)C/sub 6/H/sub 5/:orthorhombic space group P2₁2₁2₁, a=6.108(1)Å, b=7.593(1)Å, c=22.356(2)Å, V=1037.1(3)ų, Z=4, R=0.0613. Crystallographic data for (GaMe₂)₂(2-SC₄H₃CH=NNC/sub 6/H/sub 5/)₂:monoclinic space group P2₁/n, a=15.996(2) Å, c=9.879(3)Å, β=100.07.(2)°, V=2764.599)ų, Z=4, R=0.0503.

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Advanced Oxidation Process for the Treatment of Terephthalic Acid Wastewater using UV, H2O2 and O3 : Organic and Color Removal Studies (UV, H2O2, 오존을 이용한 고급산화공정에서의 테레프탈산 제조공정 폐수 처리 : 유기물 및 색도제거 연구)

  • Kwon, Tae-Ouk;Park, Bo-Bae;Moon, Il-Shik
    • Korean Chemical Engineering Research
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    • v.45 no.6
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    • pp.648-655
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    • 2007
  • UV/H_2O_2$, $O_3$, $O_3/H_2O_2$, $UV/H_2O_2/O_3$ processes were tested for the removal of COD and color from terephthalic acid wastewater. COD removal efficiencies were 10, 48, 56, 63% in the $UV/H_2O_2$, $O_3$, $O_3/H_2O_2$, $UV/H_2O_2/O_3$ process respectively. Color removal efficiency of $UV/H_2O_2$ process was 80% and $O_3$, $O_3/H_2O_2$, $UV/H_2O_2/O_3$ processes were almost more than 99%. Terephthalic acid, isophthalic acid and benzoic acid were completely destructed in terephthalic wastewater within 120 min by $UV/H_2O_2/O_3$ process and shows high COD and color removal efficiencies. The optimum concentration of $H_2O_2$ dosage was found to be 0.5 M, 25 mM and 5 mM for $UV/H_2O_2$, $O_3/H_2O_2$ and $UV/H_2O_2/O_3$ processes respectively, Organic destruction efficiency was enhanced and also reducing the consumption of $H_2O_2$ dosage by combining UV, $H_2O_2$ and $O_3$ process.

The properties of Al-doped ZnO films deposited with RF magnetron sputtering system in various H2/(Ar + H2) gas ratios (RF 마그네트론 스퍼터링 방법을 사용해 증착된 Al이 도핑 된 ZnO 박막의 H2/(Ar + H2) 가스 비율에 따른 특성)

  • Kim, Jwa-Yeon;Han, Jung-Su
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.3
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    • pp.122-126
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    • 2012
  • The properties of Al-doped ZnO (AZO) films were investigated as a function of $H_2/(Ar+H_2)$ gas ratio using an AZO (2 wt% $Al_2O_3$) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at $200^{\circ}C$ and in $2{\times}10^{-2}$ Torr working pressure and with various ratios of $H_2/(Ar+H_2)$ gas. During the AZO film deposition process, partial $H_2$ gas affected the AZO film characteristics. The electron resistivity (${\sim}9.21{\times}10^{-4}\;{\Omega}cm$) was lowest and mobility (${\sim}17.8\;cm^2/Vs$) was highest in AZO films when the $H_2/(Ar+H_2)$ gas ratio was 2.5 %. When the $H_2/(Ar+H_2)$ gas ratio was increased above 2.5 %, the electron resistivity increased and mobility decreased with increasing $H_2/(Ar+H_2)$ gas ratio in AZO films. The carrier concentration increased with increasing $H_2/(Ar+H_2)$ gas ratio from 0 % to 7.5 %. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90 % and an orientation of the deposition was [002] orientation for AZO films grown with all $H_2/(Ar+H_2)$ gas ratios.

GORENSTEIN SEQUENCES OF HIGH SOCLE DEGREES

  • Park, Jung Pil;Shin, Yong-Su
    • Journal of the Korean Mathematical Society
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    • v.59 no.1
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    • pp.71-85
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    • 2022
  • In [4], the authors showed that if an h-vector (h0, h1, …, he) with h1 = 4e - 4 and hi ≤ h1 is a Gorenstein sequence, then h1 = hi for every 1 ≤ i ≤ e - 1 and e ≥ 6. In this paper, we show that if an h-vector (h0, h1, …, he) with h1 = 4e - 4, h2 = 4e - 3, and hi ≤ h2 is a Gorenstein sequence, then h2 = hi for every 2 ≤ i ≤ e - 2 and e ≥ 7. We also propose an open question that if an h-vector (h0, h1, …, he) with h1 = 4e - 4, 4e - 3 < h2 ≤ (h1)(1)|+1+1, and h2 ≤ hi is a Gorenstein sequence, then h2 = hi for every 2 ≤ i ≤ e - 2 and e ≥ 6.

Comparision of the Pressure Denaturation of Metmyoglobin in $H_2O$ and $D_2O$ ($H_2O$$D_2O$ 에서 메트미오글로빈의 압력에 의한 변성의 비교 연구)

  • Keon Kim
    • Journal of the Korean Chemical Society
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    • v.28 no.1
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    • pp.14-19
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    • 1984
  • The stability difference of metmyoglobin in $H_2O$ and $D_2O$ at pH 5.7 and pH 7.0 toward pressure denaturation is studied. Metmyoglobin is denatured in $D_2O$ at smaller pressure than in $H_2O$. The stability difference in $H_2O$ and $D_2O$ is more pronounced at pH 5.7 than at pH 7. The main reasons for the stability difference in $H_2O$ and $D_2O$are the difference in positive charge due to $H^+$and $D^+$ binding to the protein in $H_2O$ and $D_2O$, and the structural change that accompany deuteration.

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Fe-H…H-C Dihydrogen Bondings: Synthesis and Structure of trans-[FeH(NCSe)(dppe)2](dppe=Ph2 PCH2 CH2 PPh2 (Fe-H…H-C 이수소 결합: trans-[FeH(NCSe)(dppe)2](dppe=Ph2 PCH2 CH2 PPh2의 합성 및 구조)

  • Baek, Ji Yeong;Han, Won Seok;Lee, Sun Won
    • Journal of the Korean Chemical Society
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    • v.46 no.5
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    • pp.427-436
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    • 2002
  • Reaction of $trans-[FeHCl(dppe)_2]$ (1) with KSeCN led to the formation of $trans-[FeH(NCSe)(dppe)_2](2).$ Compound 2 $·CH_2Cl_2$ was structurally characterized by X-ray diffraction, in which the hydride ligand appears to be involved in the dihydrogen bonding of the type M-H${\cdot}$${\cdot}$${\cdot}$H-C.

The characteristics of Al-doped ZnO films deposited with RF magnetron sputtering system in various H2/(Ar+H2) gas ratios

  • Kim, Jwayeon;Han, Jungsu;Park, Kyeongsoon
    • Journal of Ceramic Processing Research
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    • v.13 no.spc2
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    • pp.407-410
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    • 2012
  • The properties of Al-doped ZnO (AZO) films were investigated as a function of H2/(Ar + H2) gas ratio using an AZO (2 wt% Al2O3) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at 200 ℃ and in 2 × 10-2Torr working pressure and with various ratios of H2/(Ar + H2) gas. During the AZO film deposition process, partial H2 gas affected the AZO film characteristics. The electron resistivity (~ 9.21 × 10-4 Ωcm) was lowest and mobility (~17.8 ㎠/Vs) was highest in AZO films when the H2/(Ar + H2) gas ratio was 2.5%. When the H2/(Ar + H2) gas ratio was increased above 2.5%, the electron resistivity increased and mobility decreased with increasing H2/(Ar + H2) gas ratio in AZO films. The carrier concentration increased with increasing H2/(Ar + H2) gas ratio from 0% to 7.5%. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90% and an orientation of the deposition was [002] orientation for AZO films grown with all H2/(Ar + H2) gas ratios.

The Photovoltaic Effect of Iodine-Doped Metal Free Phthalocyanine/ZnO System (Ⅰ) (요오드가 도핑된 무금속 프탈로시아닌/산화아연계의 광기전력 효과(Ⅰ))

  • Heur, Soun-Ok;Kim, Young-Soon;Park, Yoon-Chang
    • Journal of the Korean Chemical Society
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    • v.39 no.3
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    • pp.163-175
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    • 1995
  • Metal free phthalocyanine($H_2Pc$) partially doped with iodine, $H_2Pc(I)x$, has been made to improve photosensitizing efficiency of ZnO/$H_2Pc$. The content of iodine dopant level(x) for $H_2Pc(I)x$ upon $H_2Pc$ polymorphs was characterized as ${\chi}-H_2Pc(I)_{0.92}$ and ${\beta}-H_2Pc(I)_{0.96}$ by elemental analysis. Characterization of iodine-oxidized $H_2Pc$ were investigated by TGA (thermogravimetric analysis), UV-Vis, FT-IR, Raman and ESR (electron spin resonance) spectrum, and the adsorption properties of $H_2Pc(I)x$ on ZnO were characterized by means of Raman and ESR studies. TGA for $H_2Pc(I)x$ showed a complete loss of iodine at approximately 265$^{\circ}C$ and the Raman spectrum of $H_2Pc(I)x$ and ZnO/$H_2Pc(I)x$ at 514.5 nm showed characteristic $I_3^-$ patterns in the frequency region 90∼550 $cm^{-1}$. ZnO/$H_2Pc(I)x$ exhibited a very intense and narrow ESR signal at $g=2.0025{\pm}0.0005$ compared to $H_2Pc$/ZnO. Iodine doped ZnO/$H_2Pc(I)x$ showed a better photosensitivity compared to iodine undoped ZnO/$H_2Pc$. That is, the surface photovoltage of ${\chi}-H_2Pc(I)_{0.92}$/ZnO was approximately 31 times greater than that of ZnO/${\chi}-H_2Pc$ and ZnO/${\beta}-H_2Pc(I)_{0.96}$ was 5 times more efficient than ZnO/${\beta}-H_2Pc$ at 670 nm. And the dependence of photosensitizing effect upon $H_2Pc$ polymorphs was exhibited that the surface photovoltage of ZnO/${\chi}-H_2Pc(I)_{0.92}$ was approximately 5 times greater than ZnO/${\beta}-H_2Pc(I)_{0.96}$ at 670 nm. Therefore Iodine doping of H_2Pc$ resulted in increase in photoconductivity of $H_2Pc$ and photovoltaic effect of ZnO/$H_2Pc$ in the visible region.

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Study of reaction mechanism in pre-reforming for MCFC (MCFC의 예비 개질 반응 메커니즘 연구)

  • Lee, Woo-Hyung;Park, Yong-Ki
    • Industry Promotion Research
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    • v.3 no.2
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    • pp.1-8
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    • 2018
  • In this study, the reaction mechanism of ethane and the reaction rate equation suitable for hydrocarbon reforming were studied. Through the reaction mechanism analysis, it was confirmed that three reactions (CO2 + H2, C2H6 + H2, C2H6 + H2O) proceed during the reforming reaction of ethane, each reaction rate (CO2+H2($r=3.42{\times}10-5molgcat.-1\;s-1$), C2H6+H2($r=3.18{\times}10-5mol\;gcat.-1s-1$), C2H6+H2O($r=1.84{\times}10-5mol\;gcat.-1s-1$)) was determined. It was confirmed that the C2H6 + H2O reaction was a rate determining step (RDS). And the reaction equation of this reaction can be expressed as r = kS * (KAKBPC2H6PH2O) / (1 + KAPC2H6 + KBPH2O) (KA = 2.052, KB = 6.384, $kS=0.189{\times}10-2$) through the Langmuir-Hinshelwood model. The obtained equation was compared with the derived power rate law without regard to the reaction mechanism and the power rate law was relatively similar fitting in the narrow concentration change region (about 2.5-4% of ethane, about 60-75% of water) It was confirmed that the LH model reaction equation based on the reaction mechanism shows a similar value to the experimental value in the wide concentration change region.