• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• 조명전기설비학회논문지
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• 제26권3호
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• pp.9-15
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• 2012

In this paper, we deal with a surface discharge that caused an aggravation of the dielectric strength in the $N_2/O_2$ mixture gas, When composit dielectrics were formed from the use of a solid dielectric. It was found from this study that the surface discharge voltage was deeply involved in the mixture ratio of $O_2$, the electrical property of the solid dielectric, kind of the solid dielectric, an electric field at the triple junction and a medium effect. These results expect basic data that will be used to transmission and distribution power system equipment using the $N_2/O_2$ mixture gas.

• 한국표면공학회지
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• 제42권6호
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• pp.251-255
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• 2009

In this study, the plasma etching of the TaN thin film with $O_2/BCl_3$/Ar gas chemistries was investigated. The equipment for the etching was an inductively coupled plasma (ICP) system. The etch rate of the TaN thin film and the selectivity of TaN to $SiO_2$ and PR was studied as a function of the process parameters, including the amount of $O_2$ added, an RF power, a DC-bias voltage and the process pressure. When the gas mixing ratio was $O_2$(3 sccm)/$BCl_3$(6 sccm)/Ar(14 sccm), with the other conditions fixed, the highest etch rate was obtained. As the RF power and the dc-bias voltage were increased, the etch rate of the TaN thin film was increased. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical states of the surface of the TaN thin film.

• 한국세라믹학회지
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• 제41권3호
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• pp.253-258
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• 2004

Polyacrylamide(PAA) 겔법은 매우 간단한 중합법이며, 고분자 망상구조가 $\alpha$-Al$_2$O$_3$ 분말의 응집을 억제하므로 미 응집된 나노 크기의 $\alpha$-Al$_2$O$_3$ 분말은 polyacrylamide(PAA) 겔법을 통하여 성공적으로 합성되었다 본 연구에서는 황산알루미늄, acrylamide 및 N,N'-methylene-bis-acrylamide(BIS)의 여러 농도에서 합성된 겔 전구체를 공기 중에서 110$0^{\circ}C$, 2시간동안 하소시켜서 약 8-l5 nm의 직경을 가진 나노 $\alpha$-Al$_2$O$_3$ 입자들을 제조할 수 있었다. Acrylamide에 대한 황산알루미늄의 몰비를 증가시켰을 때는 나노 입자들의 크기는 변하지 않았지만, acrylamide에 대한 BIS의 몰비를 증가시켰을 때는 나노입자들의 크기는 작아지는 경향을 나타내었다.

• 한국환경과학회지
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• 제23권5호
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• pp.903-910
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• 2014

This study examined the treatment characteristics of hard-to-degrade pollutants such as TCE which are found in organic solvent and cleaning wastewater by nZVI that have excellent oxidation and reduction characteristics. In addition, this study tried to find out the degradation characteristics of TCE by Fenton-like process, in which $H_2O_2$ is dosed additionally. In this study, different ratios of nZVI and $H_2O_2$, such as 1.0 mM : 0.5 mM, 1.0 mM : 1.0 mM, and 1.0 mM : 2.0 mM were used. When 1.0 mM of nZVI was dosed with 1.0 mM of $H_2O_2$, the removal efficiency of TOC was the highest and the first order rate constant was also the highest. When 1mM of nZVI was dosed with 0.5 mM of $H_2O_2$, the first order rate constant and removal efficiency were the lowest. The size of first order rate constant and removal efficiency was in the order of nZVI 1.0 mM : $H_2O_2$ 1.0 mM > nZVI 1.0 mM : $H_2O_2$ 2.0 mM > nZVI 1.0 mM : $H_2O_2$ 0.5 mM > $H_2O_2$ 1.0 mM > nZVI 1.0 mM. It is estimated that when 1.0 mM of nZVI is dosed with 1.0 mM of $H_2O_2$, $Fe^{2+}$ ion generated by nZVI and $H_2O_2$ react in the stoichiometric molar ratio of 1:1, thus the first order rate constant and removal efficiency are the highest. And when 1.0 mM of nZVI is dosed with 2.0 mM of $H_2O_2$, excessive $H_2O_2$ work as a scavenger of OH radicals and excessive $H_2O_2$ reduce $Fe^{3+}$ into $Fe^{2+}$. As for the removal efficiency of TOC in TCE by simultaneous dose and sequential dose of nZVI and $H_2O_2$, sequential dose showed higher first order reaction rate and removal efficiency than simultaneous dose. It is estimated that when nZVI is dosed 30 minutes in advance, pre-treatment occurs and nanoscale $Fe^0$ is oxidized to $Fe^{2+}$ and TCE is pre-reduced and becomes easier to degrade. When $H_2O_2$ is dosed at this time, OH radicals are generated and degrade TCE actively.

• 한국전기전자재료학회논문지
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• 제24권7호
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• pp.589-593
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• 2011

[ $SnO_2$ ]nano powders were prepared by solution reduction method using tin chloride($SnCl_2{\cdot}2H_2O$), hydrazine($N_2H_4$) and NaOH. The $SnO_2$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at $300^{\circ}C$ in air, respectively. XRD patterns of the $SnO_2$ nano powders showed the tetragonal structure with (110) dominant orientation. The particle size of $SnO_2$ nano powders at the ratio of $SnCl_2:N_2H_4$+NaOH= 1:6 was about 60 nm. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box. Sensitivity of $SnO_2$ gas sensor to 5 ppm $CH_4$gas and 5 ppm $CH_3CH_2CH_3$ gas was investigated for various $SnCl_2:N_2H_4$+NaOH proportion. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of $SnO_2$ sensors was observed at the $SnCl_2:N_2H_4$+NaOH= 1:8 and $SnCl_2:N_2H_4$+NaOH= 1:6, respectively. Response and recovery times of $SnO_2$ gas sensors prepared by $SnCl_2:N_2H_4$+NaOH= 1:6 was about 40 s and 30 s, respectively.

• 산업경영시스템학회지
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• 제20권43호
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• pp.205-209
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• 1997

One objective of the u control chart is to detect changes of mean nonconformities per unit occurred owing to various causes. This paper shows the detection probability using the Poisson distribution for various parameters, that is, subsample size n, mean nonconformities per unit $u_o$, and $u_o's$ change ratio k. We find that (1) as $u_o$ increases the smaller n is required for the same detection probability and the same change ratio; (2) as k gets away from 1 the smaller n is required; (3) the bigger n is required for the bigger detection probability. Several tables are given from our findings and are hoped to be used as guidelines for u chart users.

• 한국재료학회지
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• 제32권9호
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• pp.384-390
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• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

• 한국작물학회지
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• 제51권4호
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• pp.318-321
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• 2006

This study was conducted in 2002 and 2003 to investigate variation on rice quality associated with cooking, and eating qualities under the three different fertilizer levels, none fertilizer level($N-P_2O_{5-}K_2O=0-0-0kg/ha$), ordinary fertilizer level($N-P_2O_{5-}K_2O=1l0-45-57kg/ha$), and heavy fertilizer level($N-P_2O_{5-}K_2O=180-90-110kg/ha$). The eight resistant near-isogenic lines(NILs) for bacterial blight in rice were examined for grain appearances, several physicochemical properties, and palatability value measured by Toyo taste meter. Significant variations in NILs(V), Years(Y), and VxY interaction were recognized in grain length and palatability value under the none fertilizer cultivation, in grain width under the heavy fertilizer cultivation, and in white belly ratio under the three different fertilizer cultivations, respectively. According to increase the fertilizer application rate, variation in grain length and grain width were not significant, but grain thickness was thinner under the ordinary and heavy fertilizer cultivations than under the none fertilizer cultivation. On the other hand, white belly ratio, protein content and Mg/K ratio increased, while amylose content and palatability value lowered. Alkali spreading value lowed under the heavy fertilizer cultivation than under the none and ordinary fertilizer cultivations. Palatability value was significantly low in the line carrying XalJ than in the other lines under the ordinary fertilizer cultivations.

• 한국물환경학회지
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• 제21권6호
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• pp.643-650
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• 2005

In order to treat leachate from aged landfill site effectively, removal of biologically recalcitrant organic matter and denitrification efficiency were evaluated through the combination of $H_2O_2/O_3$ AOP pretreatment process and UASB process. The results can be summarized as follows. In case of leachate having low COD/N ratio from aged landfill site, it is possible to increase available COD for denitrification in nitrate utilizing denitrification and nitrite utilizing denitrification both by enhancing biodegradability of recalcitrant organic matter as applying $H_2O_2/O_3$ AOP to pretreatment process. In this experiment, it is found that available COD for denitrification can be increased to 1.0 and 0.4 g/day, respectively. Comparison has been made between requiring COD and available COD for denitrification in each experimental stages. It is expected that high rate of denitrification can be achieved with leachate from young landfill site because higher amount of available COD for denotrification is present in the leachate than the amount of requiring COD for denitrification. Especially, In leachate from aged landfill site with low COD/N ratio, it can be concluded that denitrification using nitrite nitrogen can enhance overall denitrification performance efficiently because denitrification using nitrite nitrogen requires less amount of carbon source than denitrification using nitrate nitrogen. Comparing the biogas production rate and nitrogen content of biogas under the condition of same amount of nitrate and nitrite addition, biogas production and nitrogen content of biogas are increased during denitrification after $H_2O_2/O_3$ AOP pretreatment process. Therefore, it can be confirmed that COD/N ratio in the leachate is increased. Applying $H_2O_2/O_3$ AOP as pretreatment system of landfill leachate seems to have little economic benefit because it requires additional carbon source to denitrify ammonia nitrogen in leachate coming from aged landfill site. However, it is possible to apply this pretreatment process to leachate from old landfill site in view of AOP process can achieve removal of biologically recalcitrant organic matter and increase of available COD for denitrification simultaneously.