• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.40-44
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• 2011

Recent studies in crystalline silicon solar cell fabrication have been focused on high efficiency and low cost. However, the rising of the cost results in additional processes to approach high efficiency. The fabrication process also becomes complicated with additional technologies. In this paper, we studied the selective emitter formation with phosphorous paste to improve the conversion efficiency. Selective emitter formations like two-step diffusion or etch-back method require at least one more step compared in the conventional line since heavily and lightly doped area was needed to form separately.However,one-step diffusion process is the method diffusing heavily and lightly doped area at the same time only with additional screen-printing step. This study lays the foundation for the simple way to form the selective emitter.

• 항공우주기술
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• 제5권2호
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• pp.134-142
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• 2006

헬륨분사를 통한 극저온 추진제의 과냉각 방식은 발사체의 이륙 전에 액체산소의 bulk boiling을 억제하고 과냉각 상태를 유지하기 위한 효과적인 방법들 중의 하나이다. 본 자료에서는 이러한 헬륨 분사 냉각 시스템에 대한 이론적 고찰을 통해 열전달과 질량전달 조건을 이해하고, 해석 모델을 제시하였다. 해석 모델의 주요 특징은 유한 열전달과 무한질량전달 개념을 이용하여 분사 시스템을 표현한 것이다. 또한, 실험과 해석결과의 비교를 통하여 해석 모델을 검증하였으며, 헬륨 분사량의 변화, 탱크 압력의 변화 등 조건 변화에 따른 결과를 살펴보았다.

• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.569-573
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• 2013

In this study, activated carbon fabric was prepared from a cellulose-based polymer (viscose rayon) via a combination of physical and chemical activation (mixed activation) processes by means of $CO_2$ as a gasifying agent and surface and adsorption properties were evaluated. Experiments were performed to investigate the consequence of activation temperature (750, 800, 850 and $925^{\circ}C$), activation time (15, 30, 45 and 60 minutes) and $CO_2$ flow rate (100, 200, 300 and 400 mL/min) on the surface and adsorption properties of ACF. The nitrogen adsorption isotherm at 77 K was measured and used for the determination of surface area, total pore volume, micropore volume, mesopore volume and pore size distribution using BET, t-plot, DR, BJH and DFT methods, respectively. It was observed that BET surface area and TPV increase with rising activation temperature and time due to the formation of new pores and the alteration of micropores into mesopores. It was also found that activation temperature dominantly affects the surface properties of ACF. The adsorption of iodine and $CCl_4$ onto ACF was investigated and both were found to correlate with surface area.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.399-400
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• 2006

M390 microclean(R) of $B{\ddot{o}}hler$ Edelstahl is a powder metallurgical plastic mould steel with a high level of corrosion and wear resistance and therefore often used in the plastics processing industry. But as a consequence of rapidly advancing developments in the plastics processing industry the required level of wear resistance of tool steels in this field is constantly rising. For that reason a new PM tool steel with higher hardness values and an increased amount of primary carbides has been developed to improve the resistance against abrasive and adhesive wear. The wear resistance of both steels against adhesive situations for components of the plastification unit of injection moulding machines has been tested with a novel method. In case of processing polyolefins with an injection moulding machine it was found that there is adhesive wear between the check-ring and the flights of the screw tip of the non-return valve under certain circumstances. The temperature in that region was measured with an infrared temperature sensor. The existence of significant peaks of that signal was used as an indicator for an adhesive wear situation.

• Journal of Electrical Engineering and Technology
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• 제7권2호
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• pp.236-239
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• 2012

In this paper, we study the transient characteristics of 4H-SiC DMOSFETs with different interface charges to improve the turn-on rising time. A physics-based two-dimensional mixed device and circuit simulator was used to understand the relationship between the switching characteristics and the physical device structures. As the $SiO_2$/SiC interface charge increases, the current density is reduced and the switching time is increased, which is due primarily to the lowered channel mobility. The result of the switching performance is shown as a function of the gate-to-source capacitance and the channel resistance. The results show that the switching performance of the 4H-SiC DMOSFET is sensitive to the channel resistance that is affected by the interface charge variations, which suggests that it is essential to reduce the interface charge densities in order to improve the switching speed in 4H-SiC DMOSFETs.

• 조명전기설비학회논문지
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• 제30권1호
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• pp.1-7
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• 2016

With a collimated $CO_2$ laser beam, the bidirectional current switching was realized in a two-terminal electronic device based on a highly resistive vanadium dioxide($VO_2$) thin film. A $VO_2$ thin film was grown on a $Al_2O_3$ substrate by a pulsed laser deposition method. For the fabrication of a two-terminal electronic device, the $VO_2$ thin film was etched by an ion beam-assisted milling method, and the $VO_2$ device, of which $VO_2$ patch width and electrode separation were 50 and $100{\mu}m$, respectively, was fabricated through a photolithographic method. A bias voltage range for stable bidirectional current switching was found by using the current-voltage property of the device measured in a current-controlled mode. The transient responses of bidirectionally switched currents were analyzed when the laser was modulated at a variety of pulse widths and repetition rates. A switching contrast was measured as ~3333, and rising and falling times were measured as ~39 and ~21ms, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.513-514
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• 2006

This paper presents the temperature characteristics with the structure of 18 kV surge arresters for distribution system. Three types of polymer arrester were fabricated and a ceramic arrester was also prepared to investigate. Below $100^{\circ}C$, three types of polymeric arresters exhibited almost the same leakage current value, but above $100^{\circ}C$, the polymeric arresters whose module was injected into polymeric housing with the grease exhibited the highest leakage current. In contrary, the arresters being manufactured by directly injecting silicone rubber onto arrester module exhibited the lowest leakage current. The rapid rising of leakage current of the polymeric arresters with the grease at $120^{\circ}C$ was because of the deterioration of the insulation characteristics of the grease between the FRP module and the silicone housing. All polymeric arresters exhibited the same surface temperature characteristics but the ceramic arresters was slower than the polymer arrester in heat emission despite the lowest leakage current. It was thought that the air layer between ZnO varistor blocks and the ceramic housing prevented the heat emission.

• Nuclear Engineering and Technology
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• 제50권2호
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• pp.237-245
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• 2018

Potential air ingress scenarios during accidents in nuclear reactors or spent fuel pools have raised the question of the influence of air, especially of nitrogen, on the oxidation of zirconium alloys, which are used as fuel cladding tubes and other structure materials. In this context, the reaction of zirconium with nitrogen-containing atmospheres and the formation of zirconium nitride play an important role in understanding the oxidation mechanism. This article presents the results of analysis of the interaction of the oxygen-preloaded niobium-bearing alloy $M5^{(R)}$ with nitrogen over a wide range of temperatures ($800-1400^{\circ}C$) and oxygen contents in the metal alloy (1-7 wt.%). A strongly increasing nitriding rate with rising oxygen content in the metal was found. The highest reaction rates were measured for the saturated ${\alpha}-Zr(O)$, as it exists at the metal-oxide interface, at $1300^{\circ}C$. The temperature maximum of the reaction rate was approximately 100 K higher than for Zircaloy-4, already investigated in a previous study. The article presents results of thermogravimetric experiments as well as posttest examinations by optical microscopy, scanning electron microscopy (SEM), and microprobe elemental analyses. Furthermore, a comparison with results obtained with Zircaloy-4 will be made.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.52-52
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• 2018

Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.

• 대한전자공학회논문지SD
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• 제48권2호
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• pp.1-6
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• 2011

본 논문은 위상 변조를 이용한 직렬 인터페이스 입출력 회로를 설계 하였다. 설계된 직렬 입출력 인터페이스 회로는 수신부와 송신부로 구성되어 있다. 제안하는 위상변조 데이터 전송 방식은 상승 에지 위상은 고정시켜 클록 정보로 사용하고 하강에지 위상을 전송되는 데이터에 따라 변조하여 오프-칩 인터페이스에서도 적용 가능한 효율적인 데이터 전송 방식을 사용한다. 제안하는 회로는 16개의 하강 에지 위상을 사용하여 한 클록 주기마다 4비트씩 데이터를 전송함으로써 시스템에서 사용되는 클록 속도보다 4배 빠른 전송 속도를 갖는 저 전력 회로다. 본 논문에서는 0.13um CMOS 공정을 이용하여 설계 및 검증을 수행 하였고, 칩 면적 $2mm^2$ 하에서 1Gb/s 전송 속도와 12mW의 소비 전력을 갖는다.