• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.226-226
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• 2013

GaN는 III-V족 물질로 밴드갭이 3.4 eV으로 가시광선 영역에서 투명하며 우수한 전기적 특성으로 인해 여러 반도체 분야에서 응용되고 있는 물질이다. GaN 박막의 성장 방법으로는 molecular beam epitaxial 방법과 metal organic chemical vapor deposition 방법이 있지만 고비용인 단점이 있다. 이에 비해 sputtering 방법으로 성장시킨 GaN 박막은 비용이 적게 들고 저온에서 성장이 가능하다는 장점이 있다. 이 연구에서는 radio frequency sputter를 사용하여 GaN 박막을 성장하여 구조적, 광학적 특성을 분석하였다. GaN 박막은 각각 단일층의 그래핀과 c-축 사파이어 기판에 증착 하였으며, 이때 기판온도는 $25^{\circ}C$, $100^{\circ}C$, $200^{\circ}C$로 변화를 주었고, N2 분압은 2 sccm, 5 sccm, 10 sccm으로 변화를 주었다. 그래핀과 사파이어 기판에 성장된 각각의 GaN 박막의 결정성을 투과전자현미경 이미지로 측정하여 비교하였다. $4{\times}10^{-3}$ Torr 진공도와 50 W의 방전 전력과 Ar 10 sccm 분위기에서 20 min 동안 증착된 GaN 박막 두께는 70 nm정도를 가지는 것으로 확인하였다. X-ray Diffraction 측정으로 사파이어 기판 및 (002) 방향으로 성장된 GaN의 피크를 확인하였다. 추가적으로 Photoluminescence 스펙트럼은 N2 분압의 변화와 yellow luminescence 영향을 받는 것을 확인하였다. 본 연구를 통하여, 증착된 기판온도와 N2 분압의 변화에 따른 그래핀 및 사파이어 기판에 증착된 GaN 박막의 특성을 비교하였으며, sputtering 방법으로 고품질의 GaN 박막을 성장시킬 수 있는 가능성을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.161-162
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• 2011

최근 광전자 분야에서는 미래 에너지 자원에 대한 관심과 함께 GaN 기반 태양전지 연구가 활발히 진행되고 있다. GaN 물질은 높은 전자 이동도와 높은 포화 속도 등 광전자 소자에 유리한 광, 전기적 특성들을 가지고 있다. 또한, In의 함량을 변화시켜가며, 0.7eV에서 3.4eV까지 밴드갭을 조절함으로써, 자외선부터 적외선까지 태양빛 스펙트럼의 대부분을 흡수할 수 있는 장점이 있다. InGaN 태양전지의 효율을 높이기 위해서는 In의 함량을 늘려 밴드갭을 줄이는 것이 중요하다. 하지만 GaN 와 InN 간의 격자 부정합으로 인해 In 함량이 높은 단결정 InGaN 층을 두껍게 성장 하는 것이 어렵다. 때문에 GaN 기반 태양전지 관련 연구 그룹들이 태양전지의 효율 향상을 위해 활성층에 양자우물(MQWs) 구조, Supper Lattice (SLs) 구조와 같이 얇은 InGaN/GaN 층을 주기적으로 반복하여 적층함으로써 높은 조성의 In을 함유한 상질의 InGaN/GaN 층을 성장하는 연구들을 진행해 왔다. 본 연구에서는, p-i-n 구조와 MQW 구조를 갖는 InGaN 기반 태양전지를 제작하여, 각각의 특성을 분석해 봄으로써, In0.1Ga0.9N 태양전지 활성층의 구조에 따른 장/단점에 대해 논의하였다. 먼저 MOCVD를 이용하여 200 nm의 i-In0.1Ga0.9N 활성층을 갖는 p-i-n 구조와 In0.19Ga0.81N/GaN(3 nm/8 nm) MQWs (8 periods) 구조를 갖는 태양전지 에피를 각각 성장하였고, 그 후 공정을 통해 그림 1과 같이 InGaN 태양전지 소자를 제작하였다. 그 후, 각 태양전지의 전류/전압 곡선과 외부양자효율을 측정하여 그림 2와 같은 결과를 얻었다. p-i-n과 MQW 샘플의 외부양자효율은 각각 ~70%, ~25%로 측정 되었다. MQW 샘플의 외부 양자효율이 높지 않음에도 불구하고 p-i-n 구조에 비해 높은 In 함량을 가지고 있으므로, 더 넓은 파장의 빛을 흡수하여, 높은 단락전류(0.778 mA/cm2)를 보이고 있다. 또한 p-i-n 구조에 비해 높은 개방전압(2.3V)를 가지고 있으므로, MQW 샘플이 약 17% 정도 높은 변환효율(1.4%)를 보이고 있다. 이후 추가적으로 p-i-n 과 MQW 구조의 InGaN 태양전지에 나타나는 Voc와 Jsc의 차이를 Polarization 효과를 비롯한 다양한 측면에서 분석해 보고자 한다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.1-5
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• 2009

In this study, we performed growth of InGaN/GaN multi quantum well (MQW) structures on semi-polar (1-10]) GaN facet on 8-degree off oriented stripe patterned (100) Si substratcs by MOVPE. The structural and optical properties of the InGaN/GaN multi quantum well (MQW) structures grown on (1-101) GaN stripe depend on $NH_3$ flow rate, TMI flow rate and growth temperature are characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). With the decrease of $NH_3$ flow rate, the threading dislocation of (1-101) GaN is considerably reduced. We could control the transition wavelength of InGaN/GaN MQW structures from 391.5 nm to 541.2 nm depend on the growth conditions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.553-557
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• 1999

In order to investigate the optical properties of the $Al_XGa_{1-X}N/GaN$ thin film grown by metalorganic chemical vapor deposition (MOCVD) method, the photoluminescene (PL), photocurrent (PC) and persistent photoconductivity (PPC) measurements were carried out at room temperature. The band gap of the $A1_x$$Ga_{1-x}$N/GaN was determined to 3.70 eV by the PL and PC measurements. The PC measurement on the light illumination from the top of the $A1_x$$Ga_{1-x}$N/GaN thin film provides peaks at 3.70, 3.43, and around 2.2 eV. The PC spectrum by the illumination passing through from the substrate of the sample can be shown at 3.43 eV together with a broad tail band from the GaN band edge to around 2.23 eV. The photocurrent quenching and anomalous PPC decay observed in PPC measurements indicate that metastable electron states are fomed in the band gap of GaN layer to trap electrons which can be tunneled the potential barrier for long recovery time.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.387-387
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• 1998

This paper reports on a thermodynamic analysis for the GaN thick film growth by vapor phaseepitaxy method. The thermodynamic calculation was performed using a chemical stoichiometric algorism. Thesimulation variables include the growth temperature in a range 400~1500 K, the gas ratios $(GaCl_3)/(GaCl_3+NH_3)$and $(N_2)/(GaCl_3+NH_3)$. The theoretical calculation predicts that the growth temperature of GaN be in thelower range of 450~750 K than the experimental results. The difference in the growth temperature betweenthe simulation and the experiments indicates that the vapor phase epitaxy of GaN is kinetically limited,presumably, due to the high activation energy of thin film growth.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.241-245
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• 2000

Thick GaN films were grown on (0001) sapphire substrates using the direct reaction gallium and ammonia. The GaN films grew dominantly along [0002] direction, but included the growth of GaN(1010) planeq with V-shaped facetted surfaces at low temperature. With increasing growth temperature, however, the growth of GaN (1010) and (1011) planes was appeared from the films, which gives rise to the growth of hexagonal crystal with pyramid-shaped surface. The growth rate of GaN films increased with increasing growth temperature, but decreased at $1270^{\circ}C$ because the GaN films began to decompose into Ga and N at the temperature. It seemed that the crystal and optical qualities of the GaN films improve with increasing $NH_3$ flow rate. From X-ray diffraction (XRD) and photoluminescence (PL) measurements, it was observed that the yellow luminescence (YL) appeared to be significant as the peak intensity of (1010) plane of XRD spectra increased.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.5
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• pp.237-243
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• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

• Korean Journal of Metals and Materials
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• v.48 no.5
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• pp.456-461
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• 2010

We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.23-28
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• 2010

In this paper, we investigated the polarization effects on the electrical and structural characteristics of AlGaN/GaN HEMT. Both the Al mole-fraction and the barrier thickness of AlGaN, which determine the profiles of a two-dimensional electron gas, were simulated to obtain the optimum HEMT structure affecting the polarization effect. As a results, we found that the amount of bound sheet charges was increased by 16% and the maximum drain current density ($I_D$,max) was increased by more than 37%, while AI mole fractions are changed from 0.3 to 0.4. We also observed a 37% improvement in maximum drain current density ($I_D$,max) by increasing AIGaN layer thickness from 17 to 38 nm. However when AlGaN layer thickness reached the critical thickness, DC characteristics were dramatically lowered due to 'bulk' relaxation in AlGaN layer.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.354-362
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• 2017

We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anode-metal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of $114{\mu}A$ at -15 V, a breakdown voltage of 794 V.