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Growth of semi-polar (1-101) InGaN/GaN MQW structures on $8^{\circ}$ off -axis (100) patterned Si substrate by MOVPE  

Han, Y.H. (Department of Applied Science, Korea Maritime University)
Jean, H.S. (Department of Applied Science, Korea Maritime University)
Hong, S.H. (Department of Applied Science, Korea Maritime University)
Kim, E.J. (Department of Applied Science, Korea Maritime University)
Lee, A.R. (Department of Applied Science, Korea Maritime University)
Kim, K.H. (Department of Applied Science, Korea Maritime University)
Ahn, H.S. (Department of Applied Science, Korea Maritime University)
Yang, M. (Department of Applied Science, Korea Maritime University)
Tanikawa, T. (Department of Electronics, Nagoya University)
Honda, Y. (Department of Electronics, Nagoya University)
Yamaguchi, M. (Department of Electronics, Nagoya University)
Sawaki, N. (Department of Electronics, Nagoya University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.19, no.1, 2009 , pp. 1-5 More about this Journal
Abstract
In this study, we performed growth of InGaN/GaN multi quantum well (MQW) structures on semi-polar (1-10]) GaN facet on 8-degree off oriented stripe patterned (100) Si substratcs by MOVPE. The structural and optical properties of the InGaN/GaN multi quantum well (MQW) structures grown on (1-101) GaN stripe depend on $NH_3$ flow rate, TMI flow rate and growth temperature are characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). With the decrease of $NH_3$ flow rate, the threading dislocation of (1-101) GaN is considerably reduced. We could control the transition wavelength of InGaN/GaN MQW structures from 391.5 nm to 541.2 nm depend on the growth conditions.
Keywords
Si; non-polar; MOVPE; Metal organic vapor phase epitaxy; GaN; CL; MQW; Multi quantum well;
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