• Bulletin of the Korean Chemical Society
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• 제8권5호
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• pp.398-403
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• 1987

A general theory of polymer adsorption at a semi-permeable oil-water interface of the biphasic solution is presented. The configurational factor of the solution in the presence of the semi-open boundary at the interface is evaluated by the quasicrystalline lattice model. The present theory gives the feature of the bulk concentration equilibria between oil-water subsystems and the surface excesses of ${\Gamma}^{\alpha}$ and ${\Gamma}^\{beta}$ of the polymer segments as a function of the degree of polymerization $\gamma$, the Flory-Huggins parameter in $\beta$-phase $x_{\rho}^{{\beta}_{\rho}}$, the differential adsorption energy parameter in $\beta$-phase $x_{\sigma}^{{\beta}_{\rho}}$, the differential interaction energy parameter ${\Delta}x_{\rho}$ and the bulk concentration of the polymer in ${\beta}-phase ${\varphi}_2^{{\beta(*)}_2}$. From our numerical results, the characteristics of ${\Gamma}^{\alpha}$ are shown to be significantly different from those of ${\Gamma}^{\beta}$ in the case of high polymers, and this would be the most apparent feature of the adsorption behavior of the polymer at a semi-permeable oil-water interface, which is sensitively dependent on ${\Delta}x_{\rho}$ and r.

• 대한토목학회논문집
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• 제30권4A호
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• pp.353-359
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• 2010

시멘트계 기질을 사용하는 복합재료는 재료 양생 과정에서 발생하는 건조수축 균열에 취약하다. 본 연구에서는 파이버 보강 콘크리트의 건조수축에 의한 파괴 거동을 시뮬레이션 하고, 파이버의 조건이 균열 특성에 미치는 영향에 대해 분석한다. 수치 해석 모델은 무작위 격자 형태의 기하학적 구조를 공유하는 관로 요소와 rigid-body-spring 요소로 구성되는데, 각 요소가 담당하는 비역학적-역학적 거동의 커플링에 의해 건조수축이 표현된다. 파이버 보강을 모델링하기 위해 rigid-bodyspring network 내부의 semi-discrete 파이버 요소를 적용하였다. KS F 2424 자유 건조수축 실험을 해석하고 시간에 따른 건조수축 변형률 변화를 비교함으로써 재료의 건조수축 관련 계수들을 산정한다. 다음으로 여러 파이버 혼입률에 대해 KS F 2595 구속 건조수축 실험을 시뮬레이션 하고 균열 발생 일자를 선행 실험 결과와 비교하여 해석 모델의 타당성을 검증한다. 또한, 파이버의 길이와 표면 형태를 변화시켜 건조수축 균열 해석을 수행하고 최대 균열 폭을 측정하여 시뮬레이션에서 나타나는 균열 제어 효과를 판단한다.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.86-92
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• 2022

Despite otherwise advantageous properties, the performance and reliability of devices manufactured in β-Ga₂O₃ on semi-insulating Ga₂O₃ substrates may degrade because of poorly mitigated self-heating, which results from the low thermal conductivity of Ga₂O₃ substrates. In this work, we investigate and compare self-heating and device performance of β-Ga₂O₃ MESFETs on substrates of semi-insulating Ga₂O₃ and 4H-SiC. Electron mobility in β-Ga₂O₃ is negatively affected by increasing lattice temperature, which consequently also negatively influences device conductance. The superior thermal conductivity of 4H-SiC substrates resulted in reduced β-Ga₂O₃ lattice temperatures and, thus, mitigates MESFET drain current degradation. This, in turn, allows practically reduced device dimensions without deteriorating the performance and improved device reliability.

• 대한전자공학회논문지
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• 제25권11호
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• pp.1294-1303
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• 1988

광 유도 전류 천이 (photo-induced current transient)방법으로 측정한 SI GaAs의 전자와 정공 trap이 갖을 수 있는 activation energy({\Delta}E_r)의 범위는 0.16$\pm$ 0.01eV에서 0.98$\pm$ 0.01eV까지 분포되어 있다. SI Undoped GaAs가 SI GaAs : Cr 보다 깊은 준위의 수가 적음을 확인 하였다. Trap의 열적인 capture cross section과 농도를 평가 하였고, 약간의 trap은 SI GaAs 성장시에 발생될 수 있는 결함과 관련되어 있음을 확인하였다. 특히 SI GaAs에서 보상 level로 작용하는 Cr과 “0” level를 좀 더 정확하게 측정하기 위하여 서로 다른 측정방법을 사용하여 측정한 결과를 각기 비교 검토 하였다. 즉, PICT측정, 상온 이상의 온도에서 측정한 Hall data 및 광전류 spectra data 등을 비교 검토 하였으며, 보상 level은 격자 결합이 매우 약함을 확인할 수 있었다. Hall data를 computer로 분석한 결과 중성 불순물 scattering이 측정 온도 범위에서 매우 중요한 역할을 하고 있음을 알 수 있었다.

• 대한기계학회논문집
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• 제5권2호
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• pp.101-109
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• 1981

균일 인장하중하에 있는 고체 내부에 고립된 제 1형 탄소성 크랙의 반취성 파괴를 경사슬립밴드모델(inclined slip band model)로서 연속크랙전위(conticuum crack dislocation) 및 연속격자 전위(continum lattice dislocation)을 이용하여 이론적으로 연구하였다. 크랙전위 및 격자전위에 관한 힘평형을 나타애는 연립특이적분방정식의 해는크랙전위 및 격자전위에 관한 적정밀도함수를 가지고 특이함을 해소하는 조건을 부가하여 얻는다. 이특이항 해소조건의 타당성은 처음으로 소성영역의 크기를 그 판단기준으로 검토되었으며, 그결과 합당한 것으로 확인되었다. 또한 상기방법으로부터 산출된 COD는 소규모 성역을 넘어서도 선형적으로 .KAPPA.$^{2}$.EPSILON..sigma.$_{Y}$ 에 따라 변화함을 알게 된다. 상기모델에서 위축적분경로(Shrunk path) 상의 J 적분치를 J=.delta..sigma.$_{Y/}$sin2.theta.의 형태로 유도하였는데, 이것은 J 적분에 관한 Eshelby의 힘개념을 구체적으로 표현한다: J는 크랙전파방향으로 탄소성크랙정점에 작용하는 가상적인 힘이며, 1/2 J의 한 슬립편면상에서의 분력은 그 슬립정면사으이 보든 격자전위에 작용하는 전단력의 총화와 같다. 같다.

• 한국진공학회지
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• 제5권2호
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• pp.127-132
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• 1996

We measured photoreflectance spectrum characteristics of InGaAs grown by MBE method on semi-insulating GaAs. The PR signal splitting of substate and epilayer was observed. The band gap energy was about 1.40 eV. It make to 8 meV difference when it is fitted by Pan's equation. The reason is stress on the interface, which is due to lattice mismatch between epilayer and substate . We became to know that reason influence crystalline on growing sample. In InGaAs epilayer, temperature dependency is low. The efficiency of photo absorption is high and activate over 200K. In this case when it is annealed at $400^{\circ}C$ below growing temperature, PR signal splitting is remarkable and crystalline is inhanced.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.695-701
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• 2016

Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with $2^{\circ}$ offcut towards <110> at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as $9{\times}10^{17}cm^{-3}$. In addition, the reduction of GaSb lattice parameter with Be doping was studied.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2010년도 춘계학술발표논문집 2부
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• pp.961-964
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• 2010

A semi-empirical fluctuation term is presented to improve a classical equation of state (EOS) for volumetric properties in the critical region. The term is based on the two assumptions: (1) The Helmholtz energy is individually divided into classical and long-range density fluctuation contribution (2) All molecules form cluster near the critical region due to long-range density fluctuation. To formulate such molecular cluster, we extended the Veytsman statistics originally developed for the cluster due to hydrogen bonding. The probability function in the statistics is modified to represent the characteristics of long-range density fluctuation vanishing far from critical region. The proposed fluctuation contribution was incorporated into the Sanchez-Lacombe EOS and the combined model with 6 adjustable parameters has been tested against experimental VLE data. The combined model is found to well represent flatten critical isotherm for methane and top of the coexistence curve for the tested components. The prediction results for caloric data are in good agreement with the experimental data.

• 한국결정성장학회지
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• 제13권4호
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• pp.153-156
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• 2003

Pure and Ethylenediaminetetraacetic acid (EDTA) doped L-arginine phosphate (LAP) single crystals were grown from the aqueous solution by temperature lowering method. The effect of EDTA additive on the solubility and metastable zone width of LAP solution has been investigated. Addition of EDTA has enhanced the metastable zone width of LAP and hence bulk crystals could be grown. The growth rate along the [100] direction increases with EDTA additive. Powder X-ray diffraction and FTIR studies reveal the absence of EDTA in the lattice of LAP, This reveals that the addition of EDTA to LAP doesn't influence the crystallinity. However, the transmittance and NLO properties significantly increase with EDTA additive and hence bulk LAP crystals are useful for laser fusion experiments.

• Nuclear Engineering and Technology
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• 제34권3호
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• pp.202-210
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• 2002

The details of the electronic structure of the perfect crystal provides a critically important foundation for understanding the various defect states in uranium dioxide. In order to understand the local defect and impurity mechanism, the calculation of electronic structure of UO$_2$ in the one-electron approximation was carried out, using a semi-empirical tight-binding formalism(LCAO) with and without f-orbitals. The energy band, local and total density of states for both spin states are calculated from the spectral representation of Green’s function. The bonding mechanism in Perfect lattice of UO$_2$ is discussed based upon the calculations of band structure, local and total density of states.