• 한국세라믹학회지
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• 제34권8호
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3박막을 RF 마그네트론 스퍼터링법을 이용하여 Pt/Ti/SiO2/Si(100) 기판에 증착하였다 .누설전류에 영향을 주는 것으로 알려진 열처리 조건, dopant 효과 등을 평가하고자 이온반경이Ti와 유사하고 대부분이 Ti 자리를 치환하는 것으로 알려진 Nb와 Al을 각각 danor와 acceptor로 선택하여 BST 박막에 첨가한 후 누설전류를 측정하였다. 고온에서 in-situ 증착된 BST 박막은 거친 표면 형상을 보이며 낮은 전압에서 파괴가 발생하고, Nb 첨가로 누설전류가 증가하였다. 삼온 증착후 후열처리된 박막은 표면 형상도 평할도가 증가하였으며 in-situ로 제조된 박막에 비해 높은 파괴전압과 낮은 누설전류를 나타내었다. 특히 Al이 첨가된 BST 박막의 누설전류밀도는 ~10A/cm2로 도핑을 하지 않은 박막이나 Nb가 첨가된 박막에 비해 매우 낮은 누설전류밀도를 나타내었으며, 이는 산화로 인한 산소공공의 감소, 이동 가능한 hole의 감소와 후열처리과정중 계면 및 입계의 산화로 Schottky 장벽에 높아진 결과로 판단된다.

• 한국결정성장학회지
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• 제14권3호
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• pp.90-94
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• 2004

The variation of electrical properties of (Ba,Sr)$TiO_3$ [BST] thin films for Metal-Insulator-Semiconductor (MIS) capacitors was investigated. BST thin films were deposited on p-Si(100) substrates by the RF magnetron sputtering with temperature range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of AUBST/$SiO_2$/Si sandwich structure were measured for various conditions. We examined the characteristics of MIS capacitor with various oxygen pressure, substrate temperature and (Ba+Sr)/Ti ratio. It was found that the leakage current was reduced in MIS capacitor with high quality $SiO_2$ layer was grown on bare p-Si substrate by thermal oxidation. The BST MIS structure showed relatively high capacitance even though it is the combination of high-dielectric BST thin films and $SiO_2$ layer. The charge state densities of the MIS capacitors and Current-voltage characteristics of the MIS capacitor were investigated. By applying $SiO_2$ layer between BST thin films and Si substrate, low leakage current of $10^{-10}$ order was observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.196-196
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• 2008

We have investigated that the effect of post annealing on the structural and electrical properties of $Ba_{0.5}Sr_{0.5}TiO_3$ thin films. The BST thin films were deposited on n-type 4H-silicon carbide(SiC) using pulsed laser deposition (PLD). The deposition was carried out in oxygen ambient 100mTorr for 5 minutes, which results in about 300nm-thick BST films. For the BST/4H-SiC, 200nm thick silver was deposited on the BST films bye-beam evaporation. The X-ray diffraction patterns of the BST films revealed that the crystalline structure of BST thin films has been improved after post-annealing at $850^{\circ}C$ for 1 hour. The root mean square (RMS) surface roughness of the BST film measured by using a AFM was increased after post-annealing from 5.69nm to 11.49nm. The electrical properties of BST thin film were investigated by measuring the capacitance-voltage characteristics of a silver/BST/4H-SiC structure. After the post-annealing, dielectric constant of the film was increased from 159.67 to 355.33, which can be ascribed to the enhancement of the crystallinity of BST thin films.

• 한국세라믹학회지
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• 제31권12호
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• pp.1429-1436
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• 1994

We have prepared Ba0.5Sr0.5TiO3 thin films on Si substrate without buffer layer. Deposition was carried out by off-axis rf magnetron sputtering method using Ba0.5Sr0.5TiO3 stoichiometric target. The substrate temperature was changed from 40$0^{\circ}C$ to $700^{\circ}C$ during deposition. As the substrate temperature increased, relative intensity of (110) peak increased up to $600^{\circ}C$, however preferred orientation changed from (110) to (h00) beyond $650^{\circ}C$ of substrate temperature. Deposited films showed microstructures with fine grains whose diameters are less than 100 nm, and columnar structure was observed in the cross-sectional SEM micrograph. AES depth profile showed no significant diffusion at the interfacial reaction area. The effective dielectric constant of films showed maximum value at $600^{\circ}C$, and the leakage current increased with increasing substrate temperature, which may be ascribed to the crystallization of amorphous phases at grain boundary.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.31-34
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• 2006

In this study, $(Ba_{0.7}\;Sr_{0.3})TiO_3$ was coated on Pt/Ti/$SiO_2$/Si wafer by using Sol-Gel method. Coating process was repeated 3~5 times and then sintered at 750[$^{\circ}C$] for 1 hour. Each specimen was analyzed structure and electrical characteristics. In structure characteristics, EDX analyzed the samples ratio of the formation on the structural property. Thermal behavior was observed with TG-DTA and concluded that the heat-treatment of the samples was degreed 750[$^{\circ}C$]. Surface and section of thin films were observed with SEM.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.6-11
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• 2001

More than ten kinds of oxide thin films and their heterostructure have been successfully fabricated on SrTiO$_3$(001) substrates by laser molecular beam epitaxy (laser MBE). Measurements of atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM) and X-ray small-angle reflectivity reveal that the surfaces and interfaces are atom-level-smooth. The unit cell layers and the lattice structure are perfect. The electrical and optical properties of BaTiO$_3$-x thin films and BaTiO$_3$/SrTiO$_3$ (BTO/STO) superlattices were examined. The all-perovskite oxide P-N junctions have been successfully fabricated and the better I-V curves were observed.

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.504-510
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• 2002

Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.

• 마이크로전자및패키징학회지
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• 제11권3호
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• pp.63-70
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• 2004

The structural, electrical properties of $(Ba, Sr)TiO_3[BSTO]/RuO_2$ thin films were examined by the addition of amorphous BSTO layer between crystlline BSTO film and $RuO_2$ substrate. We prepared BSTO films with double-layered structure, that is, amorphous layers deposited at $60^{\circ}C$ and crystalline films. Crystalline films were prepared at 550 on amorphous BSTO layer. The thickness of the amorphous layers was varied from 0 to 170 nm. During the deposition of crystalline films, the crystallization of the amorphous layers occurred and the structure was changed to circular while crystalline BSTO films showed columnar structure. Due to insufficient annealing effect, amorphous BSTO phase was observed when the thickness of the amorphous layers exceeded 30 nm. Amorphous BSTO layer could also prevent the formation of oxygen deficient region in $RuO_2$ surface. Leakage current of total BSTO films decreased with increasing amorphous layer thickness due to structural modifications. Dielectric constant showed maxi-mum value of 343 when amorphous layer thickness was 30 nm at which the improvement by grain growth and the degradation by amorphous phase were balanced.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1491-1493
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• 1997

In this study, Sol-Gel derived $Ba_{0.7}Sr_{0.3}TiO_3$ (BST(70/30)) thin films were investigated. The stock solution of BST were fabricated and spin-coated on the Pt/Ti/$SiO_2$/Si and ITO/glass substrates. The coated specimen were dried at $300^{\circ}C$ and finally annealed at $650{\sim}750^{\circ}C$. To analyse crystallization condition and microstructural morphology for different substrates, XRD, and SEM analysis were processed. In the BST(70/30) composition. dielectric constant and loss characteristics measured at 1kHz were 173, 0.01% for Pt/Ti/$SiO_2$/Si substrates and 181, 0.019% for ITO/glass substrates, respectively.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.160-160
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• 1999