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http://dx.doi.org/10.4313/JKEM.2002.15.6.504

The Surface and Electrical Properties of BST Thin Films Prepared by Sol-Gel Method  

홍경진 (광주대학교 컴퓨터전자통신공학부)
조재철 (초당대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.15, no.6, 2002 , pp. 504-510 More about this Journal
Abstract
Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.
Keywords
High dielectric factor; Leakage current; Sol-Gel method; Spin-coaling; Fractal phenomenon;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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