The Surface and Electrical Properties of BST Thin Films Prepared by Sol-Gel Method |
홍경진
(광주대학교 컴퓨터전자통신공학부)
조재철 (초당대학교 전자공학과) |
1 |
고유전율과 박막재료의 ULSI-DRAM에서의 응용현황과 전망
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2 |
Preparation and Properties of Ferroelectric BaTiO₃Thin Films by Sol-Gel Process
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DOI |
3 |
Sol-Gel 법으로 제조한 (Ba, Sr)TiO₃박막의 전기적특성
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과학기술학회마을 |
4 |
Investigation of the characteristics of ferroelectric thin films deposited by pulsed laser ablation
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5 |
有機物配位子を用ぃたゾルゲルによるTiO₂薄膜の作製と性質
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6 |
ULSI DRAM의 Capacitor 절연막용 BST 박막의 제작과 특성
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과학기술학회마을 |
7 |
Dielectric constant and leakage current of epitaxially grown and polycrystalline SrTiO₃thin films
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8 |
BaTiO₃partical size dependence of ferroelectricity in BaTiO₃/ polymer composite
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DOI |
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10 |
Growth of Ferroelectric PLT Thin Films on Various Single Crystal Substrates
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11 |
Correlation of Ba1-x SrTiO₃materials and dielectric properties
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12 |
Microstructure evolution of epitaxial (Ba, Sr)TiO₃/(001) MgO thin films
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13 |
(Ba0.75, Sr0.25)TiO₃Films for 256Mbit DRAM
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14 |
Sol-Gel 법으로 제조한 (Ba, Sr)TiO₃박막의 구조 및 유전특성
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과학기술학회마을 |
15 |
A simple unfied analytical model for ferroelectric thin film capacitor and its appliations for nonvolatile memory operation
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