• Corrosion Science and Technology
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• v.10 no.4
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• pp.143-150
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• 2011

Copper electroplating has been applied to various fields such as decorative plating and through-hole plating. Technical realization of high strength copper preplating for wear-resistant tools and molds in addition to these applications is the aim of this work. Brighters and levelers, such as MPSA, Gelatin, Thiourea, PEG and JGB, were added in copper sulfate electrolyte, and the effects of these organic additives on the hardness were evaluated. All additives in this work were effective in increasing the hardness of copper electrodeposits. Thiourea increased the hardness up to 350 VHN, and was the most effective accelarator in sulfate electrolyte. It was shown from the X-ray diffraction analysis that preferred orientation changed from (200) to (111) with increasing concentration of organic additives. Crystallite size decreased with increasing concentration of additive. Hardness was increased with decreasing crystallite size, and this result is consistent with Hall-Petch relationship, and it was apparent that the hardening of copper electrodeposits results from the grain refining effect.

• Elastomers and Composites
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• v.45 no.2
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• pp.106-111
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• 2010

Magneto-rheological elastomers (MREs) were manufactured by incorporation of magnetic responsible powder (MRP) into natural rubber and silicone rubber. The optimum loading amounts of MRP was 30 vol.% and the natural rubber based MRE (NR-MRE) showed better mechanical property than that of silicone rubber based MRE (S-MRE). However, the modulus shift ratio caused by S-MRE, measured by Self-modified Electromagnet Applied Fast Fourier Transform Analyser (SEFFTA), was higher than that of NR-MRE. The modulus shift ratio caused by NR-MRE was 10%, while the modulus shift ratio caused by S-MRE was 35.7%. The modulus shift ratio could be improved by orienting the magnetic direction of MRP before crosslinking the MRE. The degree of orientation of MRP was analyzed using SEM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.95-100
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• 2016

We fabricated a tin sulfide (SnS) layer with Sn/Mo/glass layers followed by a RTP (rapid thermal processing), and studied the film growth and structural characteristics as a function of annealing temperature and time. The elemental sulfur (S) was cracked thermally and applied to form SnS polycrystalline film out of the Sn percursor at pre-determined pressures in the RTP tube. The sulfurization was done at the temperature from $200^{\circ}C$ to $500^{\circ}C$ for a time period of 10 to 40 min. At ${\leq}300^{\circ}C$, 20 min., p-type SnS thin films was grown and showed the best composition of at.% of [S]/[Sn] $${\sim_=}$$ 1 and [111] preferred orientation as investigated from using XRD (X-ray diffraction) analysis and EDS (energy dispersive spectroscopy) and SEM (scanning electron microscopy), and optical absorption by a UV-VIS spectrometer. In this paper, we report the details of growth characteristics of single phase SnS thin film as a function of annealing temperature and time associated with the pressure and ambient gas in the RTP tube.

• Journal of Surface Science and Engineering
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• v.53 no.4
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• pp.190-199
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• 2020

Copper pyrophosphate baths were employed in order to study the dependencies of current efficiency, residual stress, surface morphology and microstructure of electrodeposited Cu thin layers on applied current density. The current efficiency was obtained to be more than about 90 %, independent of the applied current density. Residual stress of Cu electrodeposits was measured to be in the range of -30 MPa and 25 MPa with the increase of applied current density from 0.5 to 15 mA/㎠. Relatively smooth surface morphologies of the electodeposited Cu layers were obtained at an intermediate current range between 3 and 4 mA/㎠. The Cu electrodeposits showed FCC(111), FCC(200), and FCC(220) peaks and any preferred orientation was not observed in this study. The average crystalline size of Cu thin layers was measured to be in the range of 44~69 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.593-596
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• 1999

This paper presents a process optimization of antireflectiun (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a doble-layer AR(DLAR) coating of MgF$_2$/CeO$_2$, We investigated CeO$_2$ films as an All layer because they hale a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ film deposited at 400 $^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 7m to 1.1 7m. We achieved the efficiencies of solar cells greater than 15% with 3.12 % improvement with DLAR coatings . Further details on MgF$_2$, CeO$_2$ films, and cell fabrication Parameters are presented in this paper.

• Perspectives in Nursing Science
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• v.9 no.2
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• pp.111-118
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• 2012

Purpose: This study investigated the effects of simulation-based nursing education (for the care of congestive heart failure patients) on self-directed learning competency, clinical knowledge and problem-solving ability among nursing students. Methods: A one-group, pre-post design was utilized with 87 nursing students as the subjects. The scenario of simulation-based nursing education was created using a high-fidelity patient stimulator, and consisted of four states ((1) assessment, (2) reviewing laboratory data and administering medications and treatments, (3) managing increased dyspnea and decreased urine output, and (4) handling the "getting better" state). The simulation-based nursing education included orientation, team-based learning, team-based practice, and debriefing. The data were analyzed using descriptive statistics, Pearson's correlation coefficients and paired t-tests. Results: The scores on the factors for self-directed learning competency (t=-2.57, p= .011), clinical knowledge (t=-6.85, p<.001), and problem-solving ability (t=-3.01, p= .003) increased significantly after the education intervention. Conclusion: Simulation-based nursing education is useful in improving self-directed learning competency, clinical knowledge, and problem-solving ability in nursing students.

• Journal of the Optical Society of Korea
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• v.18 no.1
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• pp.45-49
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• 2014

Well-crystallized $BaSi_2O_5:Eu^{2+}$ phosphor films were synthesized by heat treatment of spin-coated BaO:Eu on $SiO_2$ glass. We investigated luminescence-structure properties of these phosphor films as a function of heat-treatment temperature. From x-ray diffraction patterns, our $BaSi_2O_5:Eu^{2+}$ phosphor films revealed that (111)- and (204)-crystal planes of $BaSi_2O_5$ crystal were dominantly increased with an increase of heat-treatment temperature. Photoluminescence intensities of $BaSi_2O_5:Eu^{2+}$ phosphor films were increased with amount of these crystal planes. It can be explained that $Eu^{2+}$ ions were stably occupied at specific crystal orientation of $BaSi_2O_5$ crystal, enhancing the luminescent intensities of $BaSi_2O_5:Eu^{2+}$ phosphor films. In addition, our $BaSi_2O_5:Eu^{2+}$ phosphor films had transmittance of 70% at 510 nm,.due to the dense morphology and specific crystallinity of $BaSi_2O_5:Eu^{2+}$ phosphor films.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.88-92
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• 1995

Higly pure silicon crystals with an almost perfect lattice structure constityte a powerful metrological tool. The streographic standard prohection for the (111) orientation of diamond structure found by the Laue method shows angles between net planes of 60°. This value is known to be certain to some 10-8 rad. We have made a six-faced silicon polygon, and the (220) lattice planes of the polygon act as a reference angular standard. The information of angles between lattice planes could be taken by the X-ray diffraction. The angle of the rotary encoder have been calibrated using the silicon angle standard. The X-ray optics was double crystal arrangement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.760-765
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• 2011

Znic sulfide (ZnS) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The substrate temperature varied from room temperature (RT) to $500^{\circ}C$. The structural and optical properties of ZnS films were studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive analysis of X-ray (EDAX) and UV-visible transmission spectra. The XRD analyses reveal that ZnS films have cubic structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM images indicate that ZnS films deposited at $400^{\circ}C$ have nano-sized grains with a grain size of ~ 67 nm. Then films exhibit relatively high transmittance of 80% in the visible region, with an energy band gap of 3.71 eV. One obvious result is that the energy band gap of the film increases with increasing the substrate temperatures.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.64-68
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• 1995

Silicon films were deposited at $430^{\circ}C$ by remote plasma chemical vapor deposition(RPECVD) with a gas mixture of $Si_2H_6/SiF_4/H_2$. The silicon films deposited without and with $SiF_4$ were characterized using atomic force microscopy(AFM), transmission electron microscopy(TEM) and X-ray diffraction(XRD). Both silicon films have the same rugged surface morphology, but, the silicon film deposited with $SiF_4$ exhibits more rugged. The silicon film deposited without $SiF_4$ is amorphous, whereas the silicon film deposited with $SiF_4$ is polycrystalline with very small needle-like grains which are perpendicular to the substrate and uniformly distributed in the thickness of the film. The silicon film deposited with $SiF_4$ was found to have a preferred orientation along the growth direction with the<110> of the film parallel to the <111> of the substrate. The effect of $SiF_4$ during RPECVD was discussed.