• Title/Summary/Keyword: (111) orientation

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Characterizations of Ti-Al-V-N Films Deposited by DC and RF Reactive Magnetron Sputtering (직류 및 고주파 마그네트론 스퍼터링법으로 증착한 Ti-Al-V-N 박막의 특성)

  • Sohn, Yong-Un;Chung, In-Wha;Lee, Young-Ki
    • Journal of the Korean Society for Heat Treatment
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    • v.13 no.6
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    • pp.398-404
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    • 2000
  • The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed $Ar-N_2$ discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

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Fabrication of polycrystalline Si films by rapid thermal annealing of amorphous Si film using a poly-Si seed layer grown by vapor-induced crystallization

  • Yang, Yong-Ho;An, Gyeong-Min;Gang, Seung-Mo;An, Byeong-Tae
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.58.1-58.1
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    • 2010
  • We have developed a novel crystallization process, where the crystallization temperature is lowered compared to the conventional RTA process and the metal contamination is lowered compared to the conventional VIC process. A very-thin a-Si film was deposited and crystallized at $550^{\circ}C$ for 3 h by the VIC process and then a thick a-Si film was deposited and crystallized by the RTA process at $680^{\circ}C$ for 5 min using the VIC poly-Si layer as a crystallization seed layer. The RTA crystallized temperature could be lowered up to $50^{\circ}C$, compared to RTA process alone. The poly-Si film appeared a needle-like growth front and relatively well-arranged (111) orientation. In addition, the Ni concentration in the poly-Si film was lowered to $3{\times}10^{17}\;cm^{-3}$ and that at the poly-Si/$SiO_2$ interface was lowered to $5{\times}10^{19}\;cm^{-3}$. The reduction in metal contamination could be greatly helpful to achieve a low leakage current in poly-Si TFT, which is the critical parameter for commercialization of AMOLED.

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A Study on Physical Properties of BP

  • Hong, Kuen-Kee;Lee, Young-Won;Im, Jong-Hyun;Kim, Chul-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.88-90
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    • 2005
  • Boron Phosphide films were deposited on (111) Si substrate at 650 $^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 m$\ell$/min for $B_2H_6$, 60 m$\ell$/min for $PH_3$ and 1 $\ell$/min for $N_2$. After as grown the films were insitu annealed for 1hour in N$_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the RMS is $29.626{\AA}$ for the reaction temperature at 650$^{\circ}C$. The measurement of XRD shows that the films have the orientation of (101). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry.

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The Low Temperature Deposition of CrN Films by the AIP Method (아크 이온플레이팅법에 의한 저온 CrN 합성)

  • Cho, Yong K.;Kim, Sang K.;Lee, Won B.;Kim, Sung W.
    • Journal of the Korean Society for Heat Treatment
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    • v.20 no.2
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    • pp.78-83
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    • 2007
  • CrN coatings were deposited by cathodic arc ion plating method on the SKD11 steel substrates. Atmosphere temperature of $350^{\circ}C$, arc current of 90 A, nitrogen partial pressure of 1.0-5.3 Pa, and negative bias voltage of 30-135 V were selected. The characteristics of microstructure were investigated with XRD. Hardness, adhesion and friction coefficient measured by microhardness tester, scratch tester, and ball on disk tribometer. Microstructures depended on nitrogen partial pressure and bias voltage. The preferred orientation of the films was changed from (200) to (111) with decreasing pressure and increasing bias voltage. Adhesion properties related with microstructure, but microstructure changes slightly influenced on hardness and friction properties. The critical load.($Lc_1$) and hardness of CrN films deposited at 5.3 Pa, -30 V condition were 55 N(HF1), $2157{\pm}47\;Hk_{0.025}$. The friction coefficient were about 0.5 under dry condition.

Texture and Microstructure in AA3004 after Continuous Confined Strip Shearing (CCSS 변형된 AA 3004 판재의 집합조직과 미세조직)

  • 김훈동;정영훈;황병복;최호준;허무영
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2002.05a
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    • pp.181-183
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    • 2002
  • A new deformation process termed "continuouis confined sup shearing" (CCSS) has been developed for shear deformation of metallic sheets. The tools of CCSS were designed to provide a constant shear deformation of the order of 0.5 per pass while preserving the original sheet shape. In order to clarify the evolution of texture and microstructure during CCSS, strips of the aluminum alloy AA3004 were deformed by CCSS in up to three passes. FEM results indicated that CCSS provides a quite uniform shear deformation at thickness layers close to the strip center, although the deformation is not homogeneous in the die channel, in particular at the surface layers. The rolling texture of the initial sheet decreased during CCSS, and preferred orientations along two fibers developed. However, with an increasing number of CCSS passes the deformation texture did not develop futher. The evolution of annealing textures depended on the number of CCSS passes. A strong {112}<110> component in the deformation texture led to the formation of a strong {111}<112) orientation in the annealing texture. Observations by TEM and EBSD revealed the formation of very fine grains of ∼1.0$\mu\textrm{m}$ after CCSS.

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Mechanical Properties of Ultrafine Grained Materials via Equal-Channel Angular Pressing (ECAP가공에 의한 초미세립 소재의 기계적 물성)

  • Ko, Y.G.;Kim, W.G.;Ahn, J.Y.;Park, K.T.;Lee, C.S.;Shin, D.H.
    • Transactions of Materials Processing
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    • v.15 no.2 s.83
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    • pp.105-111
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    • 2006
  • A study was made to investigate the microstructure and the mechanical properties of low-carbon steel, Al-Mg alloy and Ti-6Al-4V alloy each representing bcc, fcc and hcp crystal structures, respectively fabricated by equal-channel angular(ECA) pressing. After a series of ECA pressings was performed, most grains were significantly refined below ${\mu}m$ in diameter with high mis-orientation of grain boundaries irrespective of different crystal structure used. Regarding the strain hardening capability, tensile tests of ultrafine grain (UFG) dual-phase (ferrite/martensite) steel which was different from UFG ferrite-pearlite steel were carried out at ambient temperature, and corresponding mechanical properties were discussed in relation to modified C-J analysis. Low-temperature and/or high strain-rate superplasticity of the UFG Al-Mg alloy and UFG Ti-6Al-4V alloy were also studied. Based on the analysis used in this study, it was concluded that UFG alloys exhibited the enhanced mechanical properties as compared to coarse-grained (CG) counterparts.

A Study on Properties of Electrodeposited Nickel-Cobalt Alloy Films from Sulfamate Solution (설파민산 니켈-코발트 합금도금 박막 물성에 대한 실험 연구)

  • Koo, Seokbon;Jeon, Junmi;Lee, Changmyeon;Hur, Jinyoung;Lee, HongKee
    • Journal of the Korean institute of surface engineering
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    • v.50 no.1
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    • pp.24-28
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    • 2017
  • The electrodeposition of Ni-Co alloy from a sulfamate bath was investigated. The cobalt content in the Ni-Co deposits is more influenced by the temperature or stirring effect than the current density in the process parameters. As cobalt contents in the Ni-Co deposited layer increased from 0 wt.% up to 43 wt.%, hardness value of the layer rised from 400 Hv up to 700 Hv and crystal orientation (111) increased. However, (200) and crystal size significantly reduced. The tensile and yield strength also increased, while the modulus of elasticity showed the maximum value of $10.4N/mm^2$ at 29 wt.%.

The microstructure and adhesive characteristics of Ti-Al-V-N films prepared by reactive magnetron sputtering (반응성 마그네트론 스퍼터링법으로 제조한 Ti-Al-V-N 박막의 미세조직 및 부착특성에 관한 연구)

  • Sohn, Yong-Un;Lee, Young-Ki
    • Journal of the Korean Society for Heat Treatment
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    • v.12 no.3
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    • pp.199-205
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    • 1999
  • The quaternary Ti-Al-V-N films have been grown on glass substrates by reactive dc and rf magnetron sputter deposition from a Ti-6Al-4V target in mixed Ar-$N_2$ discharges. The Ti-Al-V-N films were investigated by means of X-ray diffraction(XRD), electron probe microanalysis(EPMA) and scratch tester. Both XRD and EPMA results indicated that the Ti-Al-V-N films were of single B1 NaCl phase having columnar structure with the (111) preferred orientation. Scratch tester results showed that the adhesion strength of Ti-Al-V-N films which treated with substrate heating and vacuum annealing was superior to that of as-deposited film. The good adhesion strength was also achieved in the double-layer structure of Ti-Al-V-N/Ti-Al-V/Glass.

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A Study on MgF$_2$/CeO$_2$ AR Coating of Mono-Crystalline Silicon Solar Cell (단결정 실리콘 태양전지의 MgF$_2$/CeO$_2$ 반사 방지막에 환한 연구)

  • 유진수;이재형;이준신
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.10
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    • pp.447-450
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    • 2003
  • This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ deposited at 40$0^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4${\mu}{\textrm}{m}$ to 1.1${\mu}{\textrm}{m}$. We achieved the efficiencies of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details on MgF$_2$, CeO$_2$ films, and cell fabrication parameters are presented in this paper.

Exploring Reliability of Oriented Strand Board's Tensile and Stiffness Strengths

  • Wang, Y.;Young, T.M.;Guess, F.M.;Leon, R.V.
    • International Journal of Reliability and Applications
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    • v.8 no.1
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    • pp.111-124
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    • 2007
  • In this paper, we apply insightful statistical reliability tools to manage and seek improvements in the strengths of Oriented Strand Board (OSB). As a part of the OSB manufacturing process, the product undergoes destructive testing at various intervals to determine compliance with customers' specifications. Workers perform these tests on sampled cross sections of the OSB panel to measure the tensile strength, also called internal bond (IB), in pounds per square inches until failure. Additional stiffness strength tests include parallel and perpendicular elasticity indices (EI), which are taken from cross sectional samples of the OSB panel in the parallel and perpendicular directions with respect to the orientation of the wood strands. We explore both graphically and statistically these "pressure-to-failures" of OSB. Also, we briefly comment on reducing sources of variability in the IB and EI of OSB.

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