• Title/Summary/Keyword: (110) silicon

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Molecular Dynamics of Carbon Nanotubes Deposited on a Silicon Surface via Collision: Temperature Dependence

  • Saha, Leton C.;Mian, Shabeer A.;Kim, Hyo-Jeong;Saha, Joyanta K.;Matin, Mohammad A.;Jang, Joon-Kyung
    • Bulletin of the Korean Chemical Society
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    • v.32 no.2
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    • pp.515-518
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    • 2011
  • We investigated how temperature influences the structural and energetic dynamics of carbon nanotubes (CNTs) undergoing a high-speed impact with a Si (110) surface. By performing molecular dynamics simulations in the temperature range of 100 - 300 K, we found that a low temperature CNT ends up with a higher vibrational energy after collision than a high temperature CNT. The vibrational temperature of CNT increases by increasing the surface temperature. Overall, the structural and energy relaxation of low temperature CNTs are faster than those of high temperature CNTs.

The implementation of an 8*8 2-D DCT using ROM-based multipliers (ROM 방식의 곱셈기를 이용한 8*8 2차원 DCT의 구현)

  • 이철동;정순기
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.11
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    • pp.152-161
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    • 1996
  • This paper descrisbes the implementation of a 20D DCT that can be used for video conference, JPEG, and MPEG-related applications. The implemented DCT consists of two 1-D DCTs and a transposed memory between them, and uses ROM-based multipliers instead of conventional ones. As the system bit length, the minimum bit length that satisfies the accuracy specified by the ITU standard H.261 was chosen through the simulations using the C language. The proposed design uses a dual port RAM for the transposed memory, and processes two bits of input-pixel data simultaneously t ospeed up addition process using two sets of ROMs. The basic system architecture was designed using th Synopsys schematic editor, and internal modules were described in VHDL and synthesized to logic level after simulation. Then, the compass silicon compiler was used to create the final lyout with 0.8um CMOS libraries, using the standard cell approach. The final layout contains about 110, 000 transistors and has a die area of 4.68mm * 4.96mm, and the system has the processing speed of about 50M pixels/sec.

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Neural Network Modeling of Charge Concentration of Thin Films Deposited by Plasma-enhanced Chemical Vapor Deposition (플라즈마 화학기상법을 이용하여 증착된 박막 전하 농도의 신경망 모델링)

  • Kim, Woo-Serk;Kim, Byung-Whan
    • Proceedings of the KIEE Conference
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    • 2006.04a
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    • pp.108-110
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    • 2006
  • A prediction model of charge concentration of silicon nitride (SiN) thin films was constructed by using neural network and genetic algorithm. SIN films were deposited by plasma enhanced chemical vapor deposition and the deposition process was characterized by means of $2^{6-1}$ fractional factorial experiment. Effect of five training factors on the model prediction performance was optimized by using genetic algorithm. This was examined as a function of the learring rate. The root mean squared error of optimized model was 0.975, which is much smaller than statistical regression model by about 45%. The constructed model can facilitate a Qualitative analysis of parameter effects on the charge concentration.

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SIMPLE EXTRINSIC FIBER OPTIC METHOD TO EVALUATE ABSORBANCE IN AQUEOUS NANOPARTICLE

  • Hanh, Nguyen Thi Kieu;Kulkarnib, Atul;Kim, T.
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.1723-1726
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    • 2008
  • In recent years, there has been a remarkable progress in the development of the fiber optic sensors for the detection of various chemicals. Fiber optic sensors have the advantages of very small size, flexibility and low cost. The fiber optic sensors employing different optical or spectroscopic phenomena have been reported such as bulk absorption, optical reflectance, fluoresces and energy transfer. In this study, the effect of nanoparticle concentration in liquid upon light absorption and scattering was studied using extrinsic fiber optic method. For the evaluation, we used Red (650 nm) and Blue (430 nm) light sources which are coupled through the standard cuvette using optical fiber to detector. The experiments are carried out with Polystyrene latex (400 - 800 nm), and Silicon (35 - 110 nm) nanoparticles suspended in Isopropanol. Differences in light absorption and scattering depending on nanoparticle concentration and type are discussed. This method may be useful to study nanoparticles properties for various application and research.

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Acceleration Test for Package of High Power Phosphor Converted White Light Emitting Diodes (고출력 형광체변환 백색 LED 패키지의 가속시험)

  • Chan, Sung-Il;Yu, Yang-Gi;Jang, Joong-Soon
    • Journal of Applied Reliability
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    • v.10 no.2
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    • pp.137-148
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    • 2010
  • This study deals with the accelerated life test of high power phosphor converted white Light Emitting Diodes (High power LEDs). Samples were aged at $110^{\circ}C$/85% RH and $130^{\circ}C$/85% RH up to 900 hours under non-biased condition. The stress induced a luminous flux decay on LEDs in all the conditions. Aged devices exhibited modification of package silicon color from white to yellowish brown. The instability of the package contributes to the overall degradation of optical lens and structural degradations such as generating bubbles. The degradation mechanisms of lumen decay and reduction of spectrum intensity were ascribed to hygro-mechanical stress which results in package instabilities.

Deposition and Characterization of Antistiction Layer for Nanoimprint Lithography by VSAM (Vapor Self Assembly Monolayer) (기상 자기조립박막 법을 이용한 나노임프린트용 점착방지막 형성 및 특성평가)

  • Cha, Nam-Goo;Kim, Kyu-Chae;Park, Jin-Goo;Jung, Jun-Ho;Lee, Eung-Sug;Yoon, Neung-Goo
    • Korean Journal of Materials Research
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    • v.17 no.1
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    • pp.31-36
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    • 2007
  • Nanoimprint lithography (NIL) is a new lithographic method that offers a sub-10nm feature size, high throughput, and low cost. One of the most serious problems of NIL is the stiction between mold and resist. The antistiction layer coating is very effective to prevent this stiction and ensure the successful NIL results. In this paper, an antistiction layer was deposited by VSAM (vapor self assembly monolayer) method on silicon samples with FOTS (perfluoroctyltrichlorosilane) as a precursor for making an antistiction layer. A specially designed LPCVD (low pressure chemical vapor deposition) was used for this experiment. All experiments were achieved after removing the humidity. First, the evaporation test of FOTS was performed for checking the evaporation temperature at low pressure. FOTS was evaporated at 5 Tow and $110^{\circ}C$. In order to evaluate the temperature effect on antistiction layer, chamber temperature was changed from 50 to $170^{\circ}C$ with 0.1ml of FOTS for 1 minute. Good hydrophobicity of all samples was shown at about $110^{\circ}$ of contact angle and under $20^{\circ}$ of hysteresis. The surface energies of all samples calculated by Lewis acid/base theory was shown to be about 15mN/m. The deposited thicknesses of all samples measured by ellipsometry were almost 1nm that was similar value of the calculated molecular length. The surface roughness of all samples was not changed after deposition but the friction force showed relatively high values and deviations deposited at under $110^{\circ}$. Also the white circles were founded in LFM images under $110^{\circ}$. High friction forces were guessed based on this irregular deposition. The optimized VSAM process for FOTS was achieved at $170^{\circ}C$, 5 Torr for 1 hour. The hot embossing process with 4 inch Si mold was successfully achieved after VSAM deposition.

Measurement of Mechanical Properties of a Thermally Evaporated Gold Film Using Blister Test (블리스터 시험법을 이용한 열증착 금박막의 기계적 성질 측정)

  • Moon, Ho-Jeong;Ham, Soon-Sik;Earmme, Yun-Young;Cho, Young-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.20 no.3
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    • pp.882-890
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    • 1996
  • Mechanical properties, including Young's modulus, residual stress and rupture strength, of a thermally evaporated gold film have been measured form a blister test. In a theoretical study, the priniple of minimum potential energy and that of virtual work have been applied to the pressurized circular membrane problem, and load-deflection relations have been derived for typical membrane deflection mode of spheroidal shape. In an experimental study, circular gold membranes of 4800 A-thickness and 3.5mm diameter were fabricated by the silicon electropolishing technique. Mecahnical properties of the thin gold films were deduced from the load-deflection curves obtained by the blister test, Young's moduli, obtianed from blister test, have been in the range of 45-70 GPa, while those of bulk gold have been in the range of 78-80 GPa. Residual stresses in the evaporated gold films have been measured as 28-110MPa in tension, The rupture strength of the gold film has turned out to be almost equal to that of dental gold alloy (310-380MPa). It has been demonstrated that the present specimen fabrication method and blister test apparatus have been effective for simultaneous measurement of Young's modulus, residual stress and repture strength of thin solid films. Especially, the electropolishing technique employed here has provided a simple and practical way to fabricate thin membranes in a circular or an arbitrary shape, which could not be obtained by the conventional anisotropic silicon mecromachining technique.

Contouring of Forehead and Temple Area with Auto-Fat Injection (지방주입술을 이용한 전두 및 측두 부위의 윤곽교정술)

  • Kang, Jae-Hoon;Jung, Seung-Won;Lee, Yong-Hae;Kook, Kwang-Sik
    • Archives of Plastic Surgery
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    • v.38 no.2
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    • pp.166-172
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    • 2011
  • Purpose: Facial contouring surgery for improving congenital, acquired deformity and senile change were attempt in past. Recently contouring surgery became more interested subject for improving the flat forehead and temple area. Many synthetic materials were used such as Collagen, silicon, polyacrylamide gel as liquid form and Gore-tex, silicon implant, endotine as solid form. But, these synthetic implants associate complications as foreign body reaction, infection, displacement, granuloma formation and absorption. Auto-fat injection are used for disfigurement of many part of body. We did auto-fat injection for facial contouring of forehead and temple region. Auto-fat injection is suitable without foreign body reaction, displacement, and toxic reaction. Also auto-fat is relatively simple to obtain from patient and less expensive and able to repeat surgeries. Methods: From 2006 to 2009, 150 patients were treated with Auto-fat injection for facial contouring. For follow up, we sent questionnaire to all patients but 110 patients returned answer sheets. The patients consisted of 20 male patients and 90 female patients with an age ranged from 26 to 60, and the mean 43. Fat tissue were injected 6-8 cc in forehead, 7-12 cc in temple area and fat were harvested from thigh and abdomen. Results: In follow up, all patients, showed absorption of injected fat varied degree and except two patients all patients underwent secondary fat injection. Complications were minimal and neuropraxia of facial nerve were recovered. Most of the patients were satisfied with result of procedure, and answered that they recommend same procedure to their friends and will do surgery again. Conclusion: Auto-fat injections were implemented for facial contouring in 150 patients and obtained satisfactory result. Auto-fat injection is relatively easy procedure and applicable widely. Even though, by passing time, some of the injected fats are absorbed, auto-fat injection could be choice of treatment for contouring forehead and temple. With accumulations of cases and development of surgical technique, better result could be expected.

A Kinetic Study on the Growth of Nanocrystalline Diamond Particles to Thin Film on Silicon Substrate

  • Jung, Doo-Young;Kang, Chan-Hyoung
    • Journal of the Korean institute of surface engineering
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    • v.44 no.4
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    • pp.131-136
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    • 2011
  • A kinetic study has been made for the growth of nanocrystalline diamond (NCD) particles to a continuous thin film on silicon substrate in a microwave plasma chemical vapor deposition reactor. Parameters of deposition have been microwave power of 1.2 kW, the chamber pressure of 110 Torr, and the Ar/$CH_4$ ratio of 200/2 sccm. The deposition has been carried out at temperatures in the range of $400\sim700^{\circ}C$ for the times of 0.5~16 h. It has been revealed that a continuous diamond film evolves from the growth and coalescence of diamond crystallites (or particles), which have been heterogeneously nucleated at the previously scratched sites. The diamond particles grow following an $h^2$ = k't relationship, where h is the height of particles, k' is the particle growth rate constant, and t is the deposition time. The k' values at the different deposition temperatures satisfy an Arrhenius equation with the apparent activation energy of 4.37 kcal/mol or 0.19 eV/ atom. The rate limiting step should be the diffusion of carbon species over the Si substrate surface. The growth of diamond film thickness (H) shows an H = kt relationship with deposition time, t. The film growth rate constant, k, values at the different deposition temperatures show another Arrhenius-type expression with the apparent activation energy of 3.89 kcal/mol or 0.17 eV/atom. In this case, the rate limiting step might be the incorporation reaction of carbon species from the plasma on the film surface.

Growth characteristics of single-crystalline 6H-SiC homoepitaxial layers grown by a thermal CVD (화학기상증착법으로 성장시킨 단결정 6H-SiC 동종박막의 성장 특성)

  • 장성주;설운학
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.1
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    • pp.5-12
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    • 2000
  • As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single- crystalline 6H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 6H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented ($3.5^{\circ}$tilt) substrates from the (0001) basal plane in the <110> direction with the Si-face side of the wafer. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, transmittance spectra, Raman spectroscopy, XRD, Photoluninescence (PL) and transmission electron microscopy (TEM) were utilized. The best quality of 6H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_3H_8$ 0.2 sccm & $SiH_4$ 0.3 sccm.

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