• Transactions on Electrical and Electronic Materials
• /
• v.8 no.3
• /
• pp.110-114
• /
• 2007

Dependence of the thermal stability of nickel silicide on the film stress of inter layer dielectric (ILD) layer has been investigated in this study and silicon nitride $(Si_3N_4)$ layer is used as an ILD layer. Nickel silicide was formed with a one-step rapid thermal process at $500^{\circ}C$ for 30 sec. $2000{\AA}$ thick $Si_3N_4$ layer was deposited using plasma enhanced chemical vapor deposition after the formation of Ni silicide and its stress was split from compressive stress to tensile stress by controlling the power of power sources. Stress level of each stress type was also split for thorough analysis. It is found that the thermal stability of nickel silicide strongly depends on the stress type as well as the stress level induced by the $Si_3N_4$ layer. In the case of high compressive stress, silicide agglomeration and its phase transformation from the low-resistivity nickel mono-silicide to the high-resistivity nickel di-silicide are retarded, and hence the thermal stability is obviously improved a lot. However, in the case of high tensile stress, the thermal stability shows the worst case among the stressed cases.

• Journal of Power System Engineering
• /
• v.17 no.1
• /
• pp.110-115
• /
• 2013

The electrochemical performance and microstructure of Al-Si, Al-Si/C was investigated as anode for lithium ion battery. The Al-Si nano composite with 5 : 1 at% ratio was prepared by arc-discharge nano powder process. However, some of problem is occurred, when Al nano composite was synthesized by this manufacturing. The oxidation film is generated around Al-Si particles for passivating processing in the manufacture. The oxidation film interrupts electrical chemistry reaction during lithium ion insertion/extraction for charge and discharge. Because of the existence the oxidation film, Al-Si first cycle capacity is very lower than other examples. Therefore, carbon synthsized by glucose ($C_6H_{12}O_6$) was conducted to remove the oxidation film covered on the composite. The results showed that the first discharge cycle capacity of Al-Si/C is improved to 113mAh/g comparing with Al-Si (18.6mAh/g). Furthermore, XRD data and TEM images indicate that $Al_4C_3$ crystalline exist in Al-Si/C composite. In addition the Si-Al anode material, in which silicon is more contained was tested by same method as above, it was investigated to check the anode capacity and morphology properties in accordance with changing content of silicon, Si-Al anode has much higher initial discharge capacity(about 500mAh/g) than anode materials based on Aluminum as well as the morphology properties is also very different with the anode based Aluminum.

• Applied Chemistry for Engineering
• /
• v.28 no.3
• /
• pp.286-289
• /
• 2017

Synthesis of zeolite 4A was carried out to optimize the nanoparticle synthesis process using statistical experimental design method. The zeolite 4A was synthesized by controlling the concentration of the silicon precursor, sodium metasilicate (SMS), and characterized by XRD, SEM and nitrogen adsorption. In particular, the property of zeolite 4A can be determined by XRD analysis. Using the general factor analysis in the design of experiments, we analyzed main effects and interactions according to the reactor, reaction temperature and reaction time. The optimum reaction condition for the synthesis of zeolite 4A crystallinity was using an autoclave for 3 hours at $110^{\circ}C$. Furthermore, the optimal synthesis conditions of zeolite 4A with various crystallinity using Ludox as a silicon precursor were presented of what using both the surface and contour plot.

• Journal of the Korean Ceramic Society
• /
• v.39 no.4
• /
• pp.394-400
• /
• 2002

Tin oxide thin films doped with silicon as anodes for lithium secondary battery were fabricated by R. F. magnetron sputtering technique. The electrochemical results for lithium secondary battery anodes showed that addition of silicon decreases the oxidic state of tin, and, hence, reduced the irreversible capacity during the first discharge/charge cycle. The (110),(101),(211) planes were grown with increasing substrate temperatures. The reversible capacity of thin films fabricated in conditions of $300^{\circ}C$ substrate temperature and 7:3 $Ar:O_2$ ratio was 700 mAh/g.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.2
• /
• pp.156-161
• /
• 2011

The present study introduces a novel wet etching technique for nanostructure fabrications which usually requires low surface roughness. Using the current method, acquired profiles were smooth even in the nanoscale, which cannot be easily achieved with conventional wet or dry etching methods. As one of the most popular single crystal silicon etchant, potassium hydroxide (KOH) solution was used as a base solvent and two additives, antimony trioxide (Sb2O3) and ethyl alcohol were employed in. Four experimental parameters, concentrations of KOH, Sb2O3, and ethyl alcohol and temperature were optimized at 60 wt.%, 0.003 wt.%, 10 v/v%, and $23^{\circ}C$, respectively. Effects of additives in KOH solution were investigated on the profiles in both (110) and (111) planes of single crystal silicon wafer. The preliminary results show that additives play a critical role to decrease etch rate significantly down to ~2 nm/min resulting in smooth side wall profiles on (111) plane and enhanced surface roughness.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.22 no.2
• /
• pp.97-105
• /
• 1985

Phosphorus and boron diffusion from doped PECVD oxide films into silicon have been studied. CVD PSG was also prepared to parallelly compare the diffusion characteristics of CVD PSG with that in PECVD PSG, The phosphorus diffusion experiments were performed in N2 and O2 ambient at the temperatures of 100$0^{\circ}C$, 105$0^{\circ}C$ and 110$0^{\circ}C$ The parameters of boron diffusion have been investigated from the doped film prepared by changing B2 H6 flow rate and deposition temperature. The diffusivities and diffusion profiles of the dopant into silicon were calculated by applying Barry's model using the measured parameters such as diffusion depth and surface concentration.

• Proceedings of the KSME Conference
• /
• 2008.11a
• /
• pp.45-48
• /
• 2008

The mechanical behavior of small-sized materials has been investigated for many industrial applications, including MEMS and semiconductors. It is challenging to obtain accurate mechanical properties measurements for thin films due to several technical difficulties, including measurement of strain, specimen alignment, and fabrication. In this work, we used the micro-tensile testing unit with the real-time DIC (Digital Image Correlation) strain measurement system. This system has advantages of real time strain monitoring up to 50 nm resolution during the micro-tensile test, and ability to measure the young's modulus and Poisson's ratio at the same time. The mechanical properties of SCS (Single Crystal Silicon) are measured by uniaxial tension test from freestanding SCS which are $2.5{\mu}m$ thick, $200-500{\mu}m$ wide specimens on the (100) plane. Young's modulus, Poisson's ratio and tensile strength in the <110> direction are measured by micro-tensile testing system.

• Korean Journal of Materials Research
• /
• v.3 no.2
• /
• pp.158-165
• /
• 1993

Abstract To investigate the effect of underlying Si on the thermal stability of the TiS$i_2$ film, TiS$i_2$ films obtained by the solid-state reaction of the Ti film on as-deposited or on heat-treated poly-silicon and amorphous-silicon were annealed at 90$0^{\circ}C$ for various times. The poly-Si film was evaluated by XRD, SEM and TEM. The thermal stability of the TiS$i_2$ film was evaluated by measuring the sheet resistance and microstructural evolution during furnace annealing. Agglomeration of the TiSi, film occurred more on amorphous-Si than on poly-Si. The thermal stability of the TiS$i_2$ film was improved by annealing poly-Si. The Si layer crystallized from amorphous-Si has an equiaxed structure with the (111) preferred orientation whereas for as-deposited poly-Si has a columnar structure with the (110) orientation. Better thermal stability of the TiS$i_2$ film can be obtained by the higher surface energy of underlying poly-Si.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.26 no.6
• /
• pp.390-402
• /
• 2006

The elastic properties and thickness of mullite environmental barrier coatings grown through chemical vapor deposition (CVD) on silicon carbide substrates were measured using frequency domain photoacoustic microscopy. In this technique, extremely narrow bandwidth surface acoustic waves are generated with an amplitude modulated laser source. A photorefractive crystal based interferometer is used to detect the resulting surface displacement. The complex displacement field is mapped as a function of source-to-receiver distance in order to extract the wavelength of the surface acoustic wave at a given excitation frequency, and the phase velocity is determined. The coatings tested exhibited spatial variations in thickness and mechanical properties. The measured surface wave dispersion curves were used to extract an effective value for the elastic modulus and the coating thickness. Nanoindentation was used to validate the measurements of the effective elastic modulus. The average elastic modulus measured through the coating thickness using nanoindentation is compared to the effective modulus found using the photoacoustic system. Optical microscopy is used to validate the thickness measurements. The results indicate that the photoacoustic microscopy technique can be used to estimate the effective elastic properties in coatings exhibiting spatial inhomogeneities, potentially providing valuable feedback for the optimization of the CVD growth process.

• Korean Journal of Materials Research
• /
• v.6 no.5
• /
• pp.524-531
• /
• 1996

차세대 소자고립구조로서 연구되고 있는 trench isolation 공정 등에는 실리콘 식각이 요구되며 실리콘 식각 공정중에는 반응성 이온에 의해 격자결함이 발생할 수 있다. 이와같이 생성된 결함은 소자의 전기적 성질을 열화시키므로 열처리를 통하여 제거하여야만 한다. 따라서 본 연구에서는 Ar,Ar/H2 플라즈마로 격자결함을 인위적으로 발생시켜 20$0^{\circ}C$-110$0^{\circ}C$ 질소분위기에서 30분간 열처리에 따른 생성된 격자결함의 소거거동을 관찰하였다. 실리콘 표면에 Schottky 다이오드를 제작하여 I-V, C-V 특성을 측정하므로써 잔류하는 전기적인 손상의 정도를 평가하였다. Ar으로 식각한 경우에는 110$0^{\circ}C$ 30분간 열처리한 결과 모든 격자결함이 제거되나 Ar/H2로 식각한 경우에는 격자결함이 완전히 제거되지 않고 (111)적층결함이 남아있었다.