• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.132-139
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• 2000

This paper reports a novel micromachining process based on UV-LIGA process and (110) silicon anisotropic etching for fabrication of a high-aspect-ratio comb actuator. The comb electrodes are fabricated by (110) SILICON comb structure considering the etch-rate-ratio between (110) and (111) planes and lateral etch rate of a beam-type structure. The fabricated structure was$ 400\mum \; thick\; and\; 18\mum$ wide comb electrodes separated by $7\mim$ so that the height-gap ratio was about 57. Also considering resonant frequency of the comb actuator and the frequency-matching between sensing and driving mode for gyroscope application, we designed the number, width, height and length of the spring structures. Electroplated gold springs on both sides of the seismic mass were $15\mum\; wide,\; 14\mum\; thick\; and \; 500\mum$ long. The fabricated comb actuator had resonant frequency ay 1430Hz, which was calculated to be 1441Hz. The proposed fabrication process can be applicable to the fabrication of a high-aspect-ratio comb actuator for a large displacement actuator and precision sensors. Moreover, this combined process enables to fabricate a more complex structure which cannot be fabricate only by surface or bulk micromachining.

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.572-582
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• 1996

The porous silicon was prepared in the condition of 70mA/cm2 and 5.10 sec and then oxidized at 800~110$0^{\circ}C$ MOS(Metal Oxide Semiconductor) structure was prepared by Al electrode deposition and analyzed by C-V (Capacitance-Voltage) characteristics. Dielectric constant of oxidized porous silicon was large in the case of low temperature (800, 90$0^{\circ}C$) and short time(20-30min) oxidation and was nearly the same as thermal SiO2 3.9 in the case of high temperature (110$0^{\circ}C$) and long time (above 60 min) It is though to be caused byunoxidized silicon in oxidized porous silicon film and capacitance increase due to surface area increment effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1106-1110
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• 2005

We fabricated (110) silicon hard master by using anisotropic wet etching for embossing. The etching chemical for the silicon wafer was a TMAH $25\%$ solution. The anisotropic wet etching produces a smooth sidewall surface and the surface roughness of the fabricated master is about 3 nm. After spin coating an organic-inorganic sol-gel hybrid material on a silicon substrate, we employed hot embossing technique operated at a low pressure and temperature to form patterns on the silicon substrate by using the fabricated master. We successfully fabricated the multi-mode planar optical waveguides showing low propagation loss of 0.4 dB/cm. The surface roughness of embossed patterns was uniform for more than 10 times of the embossing processes with a single hydrophobic surface treatment of the silicon hard master.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.13-17
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• 1997

It is identified that the diamond films grown o bias-treated (100) silicon showed different surface morphologies and film textures according to the initial applied dc bias voltage at the same growth condition. The highly oriented diamond film (HODF) was successfully grown on -200 V bias-treated silicon substrate in which the heteroepitaxial relation of $(100)_{dimond}//(100)_{si}\; and\; [110]_{diamond}//[110]_{si}$ was identified. On the contrary, the heteroepitaxial relation was considerably disturbed in the samples bias-voltage was a key factor in growing the highly oriented diamond film on (100) silicon substrate. Considering the experimental results, we proposed a new model about heteroepitaxial diamond growth on silicon, in which 9 diamond unit cell are matched with 4 silicon cells and the bond covalency of both atoms is satisfied via the intermediate layer at the interface as well.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.110-110
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• 2011

The nanomechanical properties of fully lithiated and unlithiated silicon nanowire deposited on silicon substrate have been studied with atomic force microscopy. Silicon nanowires were synthesized using the vapor-liquid-solid process on stainless steel substrates using Au catalyst. Fully lithiated silicon nanowires were obtained by using the electrochemical method, followed by drop-casting on the silicon substrate. The roughness, derived from a line profile of the surface measured in contact mode atomic force microscopy, has a smaller value for lithiated silicon nanowire and a higher value for unlithiated silicon nanowire. Force spectroscopy was utilitzed to study the influence of lithiation on the tip-surface adhesion force. Lithiated silicon nanowire revealed a smaller value than that of the Si nanowire substrate by a factor of two, while the adhesion force of the silicon nanowire is similar to that of the silicon substrate. The Young's modulus obtained from the force-distance curve, also shows that the unlithiated silicon nanowire has a relatively higher value than lithiated silicon nanowire due to the elastically soft amorphous structures. The frictional forces acting on the tip sliding on the surface of lithiated and unlithiated silicon nanowire were obtained within the range of 0.5-4.0 Hz and 0.01-200 nN for velocity and load dependency, respectively. We explain the trend of adhesion and modulus in light of the materials properties of silicon and lithiated silicon. The results suggest a useful method for chemical identification of the lithiated region during the charging and discharging process.

• Journal of the Korean Magnetics Society
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• v.11 no.1
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• pp.1-7
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• 2001

We investigated to DC magnetic characteristics, the dependence of annealing temperature on the crystal grain and the crystalline orientation for grain-oriented silicon ribbon with 100 $\mu\textrm{m}$ final thickness manufactured by three times cold rolling method using the hot-rolled silicon steel plate as a raw material. The growth of (110)[001] Goss texture were almost observed in the whole area of the sample. The values of the saturation magnetic flux density B$\sub$s/ and the average ${\alpha}$ angle have 1.9 T and 4.6 degrees respectively. From this result we could be confirmed that the three times cold rolling method has a possibility of manufacture for oriented ultra-thin silicon ribbons much more simple and cheeper than the existing oriented silicon steel manufacturing method by means of more simplified producing process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.939-942
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.2
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• pp.101-105
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• 2010

Silicon electrode and ring in a plasma etcher those are in contact with harsh plasma suffer from periodic heating and cooling during their lifetime. This causes the silicon components failure due to thermal stress remaining the persistent slip bands (PSBs) on their surfaces. The factors that determine the lifetime of silicon electrode and ring were discussed with respect to silicon ingot. The impurity level and the average defect concentration measured with glow discharge mass spectrometer (GDMS) and microwave photo-conductance decay (${\mu}$-PCD) were compared with the grade of silicon ingots those are divided to slip-free and slip-allowed ingot. Some silp-allowed samples showed planar defects along <110> direction on {001} surface. The role of these defects was suggested from the viewpoint of the lifetime of silicon components.

• Journal of the Korean Society for Nondestructive Testing
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• v.35 no.6
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• pp.381-388
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• 2015

The speed and oscillation directions of elastic waves propagating in the [ab0] direction of a silicon single crystal were obtained by solving Christoffel's equation. It was found that the quasi waves propagate in the off-principal axis, and hence, the directions of the phase and group velocities are not the same. The maximum deviation of the two directions was $7.2^{\circ}$. Two modes of the pure transverse waves propagate in the [110] direction with different speeds, and hence, two peaks were observed in the pulse echo signal. The amplitude ratio of the two peaks was dependent on the initial oscillating direction of the incident wave. The pure and quasi-transverse waves propagate in the [210] direction, and the oscillation directions of these waves are perpendicular to each other. The skewing angle of the quasi wave was calculated as $7.14^{\circ}$, and it was measured as $9.76^{\circ}$. The amplitude decomposition in the [210] direction was similar to that in the [110] direction, since the oscillation directions of these waves are perpendicular to each other. These results offer useful information in measuring the crystal orientation of the silicon single crystal.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.750-758
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• 1994

The purpose of present study is to find out the formation mechanism of hemi-spherical grained(HSG) polysilicon film. Silicon film was deposited using LPCVD. Polycrystalline silicon film was deposited at $575^{\circ}C$ contained crystalline HSG in the amorphous matrix phase. The crystalline HSG can be categorized into two grains : lower grains and upper grains. Lower grains are located at interface between silicon dioxide and silicon film, and upper grains are located at surface. The growth orientations of HSG were identified as (311) or (111) directions for lower grains and perferentially (110) direction for upper grains. This difference of growth orientations seems to be caused by the difference of formation mechanisms. That is, lower grain is formed by soild phase crystallization, on the other hand, upper grain is formed by surface diffusion of silicon atoms. It was thus, proposed that the formation of practical HSG polysilicon film is mainly controlled by surface diffusion of silicon atoms.