A HIGH-ASPECT-RADIO COME ACTUATOR USING UV-LIGA SURFACE MICROMACHINING AND (110) SILICON BULK MICORMACHINING

UV-LIGA 표면 미세 가공 기술과 (110) 실리콘 몸체 미세 가공 기술을 이용한 큰 종횡비의 빗모양 구동기 제작에 관한 연구

  • Published : 2000.02.01

Abstract

This paper reports a novel micromachining process based on UV-LIGA process and (110) silicon anisotropic etching for fabrication of a high-aspect-ratio comb actuator. The comb electrodes are fabricated by (110) SILICON comb structure considering the etch-rate-ratio between (110) and (111) planes and lateral etch rate of a beam-type structure. The fabricated structure was$ 400\mum \; thick\; and\; 18\mum$ wide comb electrodes separated by $7\mim$ so that the height-gap ratio was about 57. Also considering resonant frequency of the comb actuator and the frequency-matching between sensing and driving mode for gyroscope application, we designed the number, width, height and length of the spring structures. Electroplated gold springs on both sides of the seismic mass were $15\mum\; wide,\; 14\mum\; thick\; and \; 500\mum$ long. The fabricated comb actuator had resonant frequency ay 1430Hz, which was calculated to be 1441Hz. The proposed fabrication process can be applicable to the fabrication of a high-aspect-ratio comb actuator for a large displacement actuator and precision sensors. Moreover, this combined process enables to fabricate a more complex structure which cannot be fabricate only by surface or bulk micromachining.

Keywords

References

  1. J. M. Bustillo, R. T. Howe and R. S. Muller, 'Surface Micromachining for Microelectromechanical Systems,' Proceeding of the IEEE, Vol. 86, No. 8, pp. 1552-1574, 1998 https://doi.org/10.1109/5.704260
  2. H. Guckel, 'High-Aspect-Ratio Micromachining Via Deep X-Ray Lithography,' Proceedings of the IEEE, Vol. 86, No. 8, pp. 1586-1593, 1998 https://doi.org/10.1109/5.704264
  3. H. Miyajima, and M. Mehregany, 'High-Aspect-Ratio Photolithography for MEMS Applications,' Journal of Microelectromechanical Systems, Vol. 4, No. 4, pp. 220-229, 1995 https://doi.org/10.1109/84.475549
  4. G.T.A. Kovacs, N.I. Maluf and K.E. Petersen, 'Bulk Micromachining of Silicon,' Proceedings of the IEEE, Vol. 86, No. 8, pp. 1536-1551, 1998 https://doi.org/10.1109/5.704259
  5. K.E. Bean, 'Anisotropic Etching of Silicon,' IEEE Transactions on Electron Devices, Vol. Ed-25, No. 10, pp. 1185-1193, 1978
  6. K. Sato, M. Shikida and Y. Matsushima, 'Characterization of Anisotropic Etching Properties of Single-Crystal Silicon: Effects of KOH Concentration of Etching Profiles,' IEEE MEMS Workshop, pp. 406-411, 1997 https://doi.org/10.1109/MEMSYS.1997.581871
  7. S. H. Kim, S. H. Lee, H. T. Lim, Y. K. Kim and S. K. Lee, 'Anisotropic Bulk Etching of (110) Silicon with High Aspect Ratio,' Transactions of the Institute of Electrical Engineers of Japan, Vol. 118-E, No. 1, pp. 32-36, 1998
  8. P. Krause, and E. Obermeier, 'Etch Rate and Surface Roughness of Deep Narrow U-grooves in (110)-oriented Silicon,' Journal of Micromechanics & Microengineering, Vol. 5, pp. 112-114, 1995 https://doi.org/10.1088/0960-1317/5/2/014
  9. E. Bassous, 'Fabrication of Novel Three-Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon,' IEEE Transactions on Electron Devices, Vol. ED-25, No. 10, pp. 1178-1185, 1978
  10. D. R. Ciarlo, 'A Latching Accelerometer Fabricated by the Anisotropic Etching of (110) Oriented Silicon Wafers,' Journal of Micromechanics & Microengineering, Vol. 2, pp. 10-13, 1992 https://doi.org/10.1088/0960-1317/2/1/003
  11. Y. Uenishi, M. Tsugai, and M. Mehregany, 'Micro-Opto-Mechanical Devices Fabricated by Anisotropic Etching of (110) Silicon,' IEEE MEMS Workshop '94, pp. 319-324, 1994 https://doi.org/10.1109/MEMSYS.1994.555830
  12. J. Mizuno, K. Nottmeyer, T. Kabayashi, K. Minami and M. Esashi, 'Silicon Bulk Micromachined Accelerometer with Simultaneous Linear and Angular Sensitivity,' The 9th International Conference on Solid-State Sensors and Actuators Workshop, pp. 1197-1200, 1997 https://doi.org/10.1109/SENSOR.1997.635420
  13. P. Krause, E. Obermeier, and W. Wehl, 'Backshooter-A New Smart Micromachined Single-Chip Inkjet Printhead,' The 8th International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, pp. 325-328, 1995
  14. T. M. Harms, M. Kazmierczak, and F. M. Gerner, 'Experimental Investigation of Heat Transfer and Pressure Drop through Deep Microchannels in a (110) Silicon Substrate,' Proceedings of the ASME Heat Transfer Division, Vol. 1, pp. 347-357, 1997
  15. R. S. Huang, E. A. Sani and C.Y. Kwok, 'A Novel Accelerometer Using Silicon Micromachined Cantilever Supported Optical Grid and PIN Photodetector,' The 8th International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, pp. 663-666, 1995
  16. K. Ohwada, Y. Negoro, Y. Konaka, and T. Oguchi, 'Uniform Groove-depths in (110) /--Si anisotropic etching by ultrasonic waves and application to accelerometer fabrication,' Sensors and Actuators, Vol. A50, pp. 93-98, 1995 https://doi.org/10.1016/0924-4247(96)80090-2
  17. F. Laermer, A. Schilp, K. Funk and M. Offenberg, 'BOSCH Deep Silicon Etching:Improving Uniformity and Etch Rate for Advanced MEMS Applications,' IEEE MEMS Workshop, pp. 211-216, 1999 https://doi.org/10.1109/MEMSYS.1999.746812
  18. R. Todv, K. Minami, and M. Esashi, 'Thin Beam Bulk Micromachining Based on RIE and Xenon Difluoride Silicon Etching,' The 9th International Conference on Solid-State Sensors and Actuators Workshop, pp. 671-674, 1997 https://doi.org/10.1109/SENSOR.1997.613741
  19. C.S.B. Lee, S.J. Han, and N.C. MacDonald, 'Multiple Depth, Single Crystal Silicon Microactuators For Large Displacement Fabricated by Deep Reactive Ion Etching,' Solid-State Sensor and Actuator Workshop, pp. 45-50, 1998
  20. P. C. Hsu, C. H. Mastrangelo, and K. D. Wise, 'A High Sensitivity Polysilicon Diaphragm Condenser Microphone,' IEEE MEMS Workshop, pp. 580-585, 1998 https://doi.org/10.1109/MEMSYS.1998.659822
  21. K. S. Seo, Y. H. Cho, and S. K. Youn, 'An Electrostatically-Tunable Switching Micromirror using (110) Silicon Wafers,' Digest of the LEOS Summer Topical Meeting, pp. 41-42, 1996 https://doi.org/10.1109/LEOSST.1996.540786
  22. N. Yazdi, and K. Najafi, 'An All-Silicon Single-Wafer Fabrication Technology for Precision Microaccelerometers,' The 9th International Conference on Solid-State Sensors and Actuators Workshop, pp. 1181-1184, 1997 https://doi.org/10.1109/SENSOR.1997.635416
  23. C. Burrer, and J. Esteve, 'High-precision BESOI-based resonant accelerometer,' Sensors and Actuators, A50, pp. 7-12, 1995 https://doi.org/10.1016/0924-4247(95)01032-V
  24. H. T. Lim and Y. K. Kim, 'Novel Fabrication of Comb Actuator Using Reactive Ion Etching of Polysilicon and (110) Si Anisotropic Bulk etching in KOH,' Japan Journal of Applied Physics, Vol. 37, pp. 7086-7092, 1998 https://doi.org/10.1143/JJAP.37.7086
  25. S. H. Kim, S. H. Lee, and Y. K. Kim, 'A Novel Fabrication Process for High-Aspect Ratio Comb Actuators Combining (110) Silicon Anisotropic Etching with Electroplating,' The 10th International Conference on Solid-State Sensors and Actuators, pp. 110-113, 1999
  26. C. -W. Baek and Y. -K. Kim, 'Novel fabrication process of freestanding metallic microstructures using double electroplating,' Japanese Journal of Applied Physics, Vol. 37, Part 1, No. 12B, pp. 7104-7109, 1998 https://doi.org/10.1143/JJAP.37.7104