• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.399-406
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• 1996

The orientational cross-over phenomena in an RF sputtering growth of TiN films were studied in an in-situ, real-time synchrotron x-ray scattering experiment. For the films grown with pure Ar sputtering gas, the cross-over from the more strained (002)-oriented grains to the less strained (111)-oriented grains occurred as the film thickness was increased. As the sputtering power was increased, the cross-over thickness, at which the growth orientation changes from the <002> to the <111> direction, was decreased. The addition of $N_2$ besides Ar as sputtering gas suppressed the cross-over, and consequently resulted in the (002) preferred orientation without exhibiting the cross-over. We attribute the observed cross-over phenomena to the competition between the surface and the strain energy. The x-ray powder diffraction, the x-ray reflectivity, and the ex-situ AFM surface topology study consistently suggest that the microscopic growth front was in fact always the (002) planes. In the initial stage of growth, the (002) planes were aligned to the substrate surface to minimize the surface energy. At later stages, however, the (002) growth front tilted away from the surface by about $60^{\circ}$ to relax the strain, which caused the cross-over of the preferred growth direction to the <111> direction.

• Journal of the Korean institute of surface engineering
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• v.36 no.6
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• pp.444-454
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• 2003

The effect of trace metallic additives of Al-Fe-X on microstructure, glossiness and hardness of Zn electrodeposits was investigated by using sulfate bath. The preferred orientation of Zn deposits with Al-Fe additives was (10 l)(l:3,4,2), while that of Zn deposits with Al-Fe-X(Ni,Co) additives was either (002) or (002)＋(103)ㆍ(104) mixed orientation. The preferred orientation of Zn deposits with Al-Fe-Cr additives changed from (002)+(10 l) to (10 l) orientation with increasing amount of Al additive. The surface morphology of the Zn deposits was closely related to the preferred orientation of the deposits. The glossiness of Zn deposits with Al-Fe additives increased in comparison with that of pure Zn deposit. That of the Zn deposits with Al-Fe-X additives was related to the morphology of the deposits and changed according to type of additives. The hardness of Zn deposits with Al-Fe-X(Ni,Co,Cr) additives was noticeably higher than that of Zn deposits with Al-Fe additives.

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1227-1234
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• 1997

ZnO thin films were prepared by rf-magnetron sputter at various conditions. Crystallinity, microstructure, chemical composition, and optical composition, and optical properties of the films were investigated as functions of substrate temperature (R. T.-50$0^{\circ}C$) an sputter gas (O2/Ar=0-50%). ZnO thin films grown at 50$0^{\circ}C$ with sputter gas of pure argon as well as at R. T. with sputter gas of a mixture of argon & oxygen(O2/Ar=2%) exhibit a strong tendency of (002) preferred orientation, compared with a considerable random orientation at the other conditions. The thin films with (002) preferred orientation has a chemical stoichiometry of Zn/O-1.01, a band gap of 3.3eV, and a packing density of 98% respectively.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.97-101
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• 1995

We report the results of a real-time synchrotron x-ray scattering study of the growth of TiN thin films on Si(001) substrates by RF sputtering. Our experiemnts show that the morphology of the TiN films strongly depends on growth conditions. After the nucleation and growth takes place with random crystallographic orientation at the very early stage, the films grow with a preferred orientation. Such preferred orientation was found to depend on both the sputtering power and the carrier gases used in the sputtering. Generally, the final morphology assumes either(111) or (002) crystallographic orientation. Using Ar sputtering, a cross-over effect from(002) to (111) was observed at intermediate time. The nature of the observed morphological changes is discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.969-973
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• 2012

AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/$N_2$ gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.8
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• pp.319-324
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• 2003

AIN thin films are deposited on Si (100) and $SiO_2$/Si substrates by using an RF magnetron sputtering method and by changing the conditions of deposition variables, such as RF power, $N_2$/Ar flow ratio, and substrate temperature ($T_sub$). For all the deposited AIN films, XRD Peak patterns are monitored to examine the effect of deposition condition on the crystal orientation. Highly (002)-oriented AIN films are obtained at following nominal deposition conditions; RF Power : 350W, $N_2$/Ar ratio = 10/20, T$_{sub}$ : $250^{\circ}C$, and working pressure = 5mTorr, respectively. AIN-based SAW devices are fabricated using a lift-off method by varying the thickness of AIN layer. Insertion losses and side-lobe rejection levels of fabricated SAW devices are extracted from their frequency response characteristics, which are also compared in terms of AIN thickness and substrate. Relationships between the film properties of AIN films and the frequency responses of SAW devices are discussed. It is concluded from the experimental results that the (002)-preferred orientation as well as the surface roughness of AIN film may play a crucial role of determining the device performances of AIN-SAW devices.s.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.417-422
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• 2002

ZnO thin films were deposited on various substrates, such as Si-(111), SiO$_2$(5000 $\AA$ by thermal CVD)/Si-(100), and SiO$_2$(2000 $\AA$ by RF sputtering)/Si-(100). The (002)-orientation, surface morphology and roughness, and electrical resistivity of deposited films were measured and compared in terms of substrate. Surface acoustic wave(SAW) filters with a multilayered configuration of IDT/ZnO/SiO$_2$/Si were also fabricated and the IDT was obtained using a lift-off method. From the frequency-response characteristics of fabricated devices, the insertion loss and side-lobe rejection were estimated. The experimental results showed that the (002)-oriented growth nature of ZnO films, which played a crucial role of determining the characteristic of SAW device, was strong1y dependent upon the SiO$_2$buffer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1036-1038
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• 2001

The sapphire orientation dependence of the crystallization of ZnO thin films has been studied using real-time synchrotron x-ray scattering. The amorphous ZnO thin films with a 2400-${\AA}$-thick were grown on sapphire(110) and sapphire(001) substrates by radio frequency magnetron sputtering at room temperature. The amorphous ZnO films were crystallization into epitaxial ZnO(002) grains both on the sapphire(110) and on the sapphire(001) substrates. The epitaxial quality, such as mosaic distribution and crystal domain size, of the ZnO grains on the sapphire(110) is high, similar to that of the ZnO grains on the sapphire(001). With increasing the annealing temperature to 600$^{\circ}C$, the mosaic distribution and the crystal domain size of ZnO(002) grains in the film normal direction was improved and decreased, respectively.

• Journal of the Korean institute of surface engineering
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• v.37 no.1
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• pp.28-39
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• 2004

The effect of trace metallic additives on microstructure, surface appearance and hardness of zinc electrodeposits was investigated by using sulfate bath and flow cell system. The preferred orientation of Zn deposit with Fe additive was (103)(104)+(002) mixed texture and that of Zn deposits with both Fe-Ni and Fe-Co additives was (10 1), while Zn deposits with Fe-Cr additives had (002) preferred orientation. The surface morphology of the zinc deposits was closely related to the preferred orientation of the deposits. The glossiness of Zn deposit with Fe-Ni additives was higher than that of pure Zn deposit, while the glossiness of Zn deposits with both Fe-Co and Fe-Cr additives was lower than that of pure Zn deposit. The hardness of Zn deposits with both Fe-Ni and Fe-Co additives was noticeably higher than that of Zn-Fe deposit, while that of Zn deposit with Fe-Cr additives was similar to that of Zn-Fe deposit.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1098-1101
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• 1995

NbTi thin films were prepared on Si wafer and Cu substrate by rf magnetron sputtering in the range of sputtering pressure $3{\times}10^{-2}$torr to $3{\times}10^{-4}$torr at room temperature. The influence of sputtering pressure and substrate type on crystallographic orientation and morphology of NbTi thin films was investigated by using X-ray diffraction(XRD) and scanning electron microscopy(SEM), respectively. And the effect of crystallographic orientation and morphology of NbTi film on electromagnetic behaviors was estimated by measuring critical current in various applied magnetic field. The film morphology changed from porous structure consisting of tapered crystallites to densely deposited film decreasing with sputtering pressure. The change of crystallographic orientation with the sputtering pressure and rf power was calculated from the texture coefficient of(002) plane based on XRD patterns. It was found that a change of texture coefficient of(002) plane increased with decreasing sputtering pressure. From observation of critical current in various applied magnetic field, we have identified that the change of critical current abruptly decrease applying with magnetic field and NbTi film produced at high sputtering pressure does not exhibit superconductivity but at low sputtering pressure shows superconductivity.