• 제목/요약/키워드: 'S-align'

검색결과 149건 처리시간 0.04초

재생한 니켈 티타늄 호선의 3점 굴곡물성실험 (Three point bending test of recycled Nickel-Titanium alloy wires)

  • 이성호;장영일
    • 대한치과교정학회지
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    • 제30권6호
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    • pp.731-738
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    • 2000
  • 본 연구의 목적은 재생된 니켈-티타늄 호선의 3점 굴곡물성의 변화를 조사하여, 임상적으로 니켈-티타늄 호선을 재생하여 사용하는 것이 타당한지를 알아보는 것이다. 4종의 니켈-티타늄 호선(Align, NiTi, Optimallo, Sentalloy)을 처리전(T0: 대조군)과 인공타액에 4주간 처리한 군(T1), 그리고 인공타액 처리 후 가압증기 멸균소독한 군(T2)으로 구분하여 3점 굴곡실험을 하였다. 3mm 변형시의 loading force, unloading force, hysteresis와 1mm 변형시의 loading, unloading force, stress hysteresis의 변화를 관찰하여 다음과 같은 결과를 얻었다. 1. Align은 재생 (T2)후에 3mm 변형시의 loading force, unloding force가 통계적으로 유의성 있게 증가하였다(loading force: p,0.05, unloading force:p<0.01). NiTi, Optimmalloy, Sentalloy에서는 통계적으로 유의성 있는 차이가 보이지 않았다. 2. Align은 재생(T2)후에 hysteresis가 통계적으로 유의성 있게 감소하였다(p<0.01). NiTi, Optimmalloy, Sentalloy에서는 통계적으로 유의성있는 차이가 보이지 않았다. 3. 모든 호선에서 1mm 변형시의 loading force는 재생(T2)후에 통계적으로 유의성있는 차이를 보이지 않았다. 4. Align은 재생(T2)후에 1mm 변형시의 unloading force가 통계적으로 유의성있게 증가하였다(p<0.05). NiTi, Optimmalloy, Sentalloy에서는 통계적으로 유의성있는 차이가 보이지 않았다. 5. Align의 loading force와 unloading force는 T1과 T0는 통계적으로 유의한 차이가 없었으며, T2와 T0사이에 유의성 있는 차이가 있었다(각각 p<0.05, p<0.01). 6. Align은 T1에서 pseudoelasticity가 감소하고, T2에서는 pseudoplasticity와 pseudoelasticity가 감소하였다.

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가변 Threshold를 이용한 Wafer Align Mark 중점 검출 정밀도 향상 연구 (A Study on Improving the Accuracy of Wafer Align Mark Center Detection Using Variable Thresholds)

  • 김현규;이학준;박재현
    • 반도체디스플레이기술학회지
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    • 제22권4호
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    • pp.108-112
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    • 2023
  • Precision manufacturing technology is rapidly developing due to the extreme miniaturization of semiconductor processes to comply with Moore's Law. Accurate and precise alignment, which is one of the key elements of the semiconductor pre-process and post-process, is very important in the semiconductor process. The center detection of wafer align marks plays a key role in improving yield by reducing defects and research on accurate detection methods for this is necessary. Methods for accurate alignment using traditional image sensors can cause problems due to changes in image brightness and noise. To solve this problem, engineers must go directly into the line and perform maintenance work. This paper emphasizes that the development of AI technology can provide innovative solutions in the semiconductor process as high-resolution image and image processing technology also develops. This study proposes a new wafer center detection method through variable thresholding. And this study introduces a method for detecting the center that is less sensitive to the brightness of LEDs by utilizing a high-performance object detection model such as YOLOv8 without relying on existing algorithms. Through this, we aim to enable precise wafer focus detection using artificial intelligence.

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S-align 기능을 이용한 흉부 전·후 방향 검사 시 적절한 X선관 각도에 관한 연구 (The Study of Appropriate X-ray Tube Angle for the Anterior-posterior Chest Radiography Using S-align Function)

  • 박명주;주영철;김민석;육정원;김한용;김동환
    • 대한방사선기술학회지:방사선기술과학
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    • 제45권4호
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    • pp.299-304
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    • 2022
  • This study uses the 'S-align' function to present a reference value of the X-ray tube angle for the realization of an image similar to that of the chest PA image during chest AP radiography. This study targeted dummy phantom and used a 17"×17" DR image receptor. The irradiation conditions were 110 kVp, 160 mA, 50 ms, and the distance between the central X-ray and the image receptor was set to 180 cm and 110 cm, respectively. The end of the catheter was placed at the 11th thoracic height to indicate the nasogastric tube. In the case of lung apex length measurement, the mean value of measurement was 30.53±0.47 in PA. T 0°, TCA 5~25°, TCE 5~15° were 21.07±0.29, 27.60±0.21, 34.13±0.44, 39.86±0.31, 45.96±0.61 mm, 54.13±0.37 mm, 16.16±0.46 mm, 9.81±0.35 mm, 2.75±0.30 mm, respectively. For the depth of the catheter end, the average value measured at PA was 6.70±0.31 mm. T 0°, TCA 5~25°, TCE 5~15° were 15.72±0.38 mm, 24.10±0.50 mm, 29.24±0.86 mm, 34.35±0.35 mm, 41.06±1.08 mm, 48.07±0.38 mm, 12.85±0.25 mm, 7.92±0.36 mm, 3.01±0.39 mm, respectively. The length of the lung apex was similar to that of chest PA when the angle of incidence was adjusted from 5° to 10° in the leg direction, and the depth of the catheter tip was most similar when the X-ray tube angle was incident at 10° in the head direction. Therefore, To change the X-ray tube angle according to the purpose of the examination during the chest AP radiography using 'S-align' function is considered necessary.

화상정렬 시스템을 이용한 잉크젯 반복인쇄기술 (For High Aspect Ratio of Conductive Line by Using Alignment System in Micro Patterning of Inkjet Industry)

  • 박재찬;박성준;서상훈;정재우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.154-154
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    • 2006
  • 글씨 전도성 잉크의 인쇄공정에 있어서 반복인쇄를 정밀하게 수행할 수 있는 기술로서 align system을 개발하였다. 이 system의 resolution 은 0.5um 이며 인쇄 working plate의 이송속도는 최대 1.5m/s 이다. 현재 소성 공정을 포함한 반복인쇄 실험은 30um이상의 drop탄착점 오차를 보이고 있으며, 두께와 전기전도도 향상을 위한 정밀한 align system이 필요하게 되었다. 이를 충족시키기 위해 개발되어진 초정밀 align system은 $1{\sim}2{\mu}m$이내의 오차로 반복인쇄가 가능하며, head가 토출하는 잉크의 straightness 및 전도성 잉크를 토출하는 인쇄평가기의 기계적 정밀도도 확인할 수 있다. 모든 잉크 배선의 두께 항상 인쇄실험이 가능하며, substrate의 종류와 잉크에 제한적이지 않다. 특히 prototype의 기판배선을 위해 PCB에 배선을 형성할 시에 본 system으로 직접 align mark를 지정할 수 있어 기판 내에 미리 제작되어진 align용 인식마크가 불필요하다. 이 system을 이용하여 drop과 배선의 반복인쇄실험을 진행하였으며, 광학현미경과 3D profiler를 사용하여 분석해 보았다.

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프레스 자동화 공정을 위한 비전 기반 블랭크 정렬 장치 개발 (Development of a Vision-based Blank Alignment Unit for Press Automation Process)

  • 오종규;김대식;김수종
    • 제어로봇시스템학회논문지
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    • 제21권1호
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    • pp.65-69
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    • 2015
  • A vision-based blank alignment unit for a press automation line is introduced in this paper. A press is a machine tool that changes the shape of a blank by applying pressure and is widely used in industries requiring mass production. In traditional press automation lines, a mechanical centering unit, which consists of guides and ball bearings, is employed to align a blank before a robot inserts it into the press. However it can only align limited sized and shaped of blanks. Moreover it cannot be applied to a process where more than two blanks are simultaneously inserted. To overcome these problems, we developed a press centering unit by means of vision sensors for press automation lines. The specification of the vision system is determined by considering information of the blank and the required accuracy. A vision application S/W with pattern recognition, camera calibration and monitoring functions is designed to successfully detect multiple blanks. Through real experiments with an industrial robot, we validated that the proposed system was able to align various sizes and shapes of blanks, and successfully detect more than two blanks which were simultaneously inserted.

Prediction of Communication Outage Period between Satellite and Earth station Due to Sun Interference

  • Song, Yong-Jun;Kim, Kap-Sung;Jin, Ho;Lee, Byoung-Sun
    • Journal of Astronomy and Space Sciences
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    • 제27권1호
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    • pp.31-42
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    • 2010
  • We developed a computer program to predict solar interference period. To calculate Sun's position, we used DE406 ephemerides and Earth ellipsoid model. The Sun's position error is smaller than 10arcsec. For the verification of the calculation, we used TU media ground station on Seongsu-dong, and MBSAT geostationary communication satellite. We analysis errors, due to satellite perturbation and antenna align. The time error due to antenna align has -35 to +16 seconds at $0.1^{\circ}$, and -27 to +41 seconds at $0.25^{\circ}$. The time errors derived by satellite perturbation has 30 to 60 seconds.

전기장을 이용한 탄소나노튜브 카트리지 연구 (A Study on the Carbon Nanotube Cartridges Using Electric Field)

  • 최재성;곽윤근;김수현
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 춘계학술대회 논문집
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    • pp.1164-1167
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    • 2005
  • This paper is about the carbon nanotube(CNT) samples called as CNT cartridges. The CNT cartridges are useful to make it better to fabricate the nano-sized devices like nanoprobes and nanotweezers through physical attachment. To make these cartridges, we need to align CNTs and to purify them from raw material. There is a variety of methods to align 1-dimensional nanostructures like nanotubes and nanowires. In this review, we mainly focused on the methods using electric field. And we will introduce various researches in relation to the CNT cartridges and the fabrication methods using the CNT cartridges and nanomanipulation techniques.

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광학식측정장치를 이용한 금속정 내고정 수술의 원위부 나사체결을 위한 로보틱 유도 시스템 (Robotic Guidance of Distal Screwing for Intramedullary Nailing Using Optical Tracking System)

  • ;김우영;고성영
    • 로봇학회논문지
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    • 제12권4호
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    • pp.411-418
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    • 2017
  • During the intramedullary nailing procedure, surgeons feel difficulty in manipulation of the X-ray device to align it to axes of nailing holes and suffer from the large radiation exposure from the X-ray device. These problems are caused by the fact the surgeon cannot see the hole's location directly and should use the X-ray device to find the hole's location and direction. In this paper, we proposed the robotic guidance of the distal screwing using an optical tracking system. To track the location of the hole for the distal screwing, the reference marker is attached to the proximal end of an intramedullary nail. To guide the drill's direction robustly, the 6-degree-of-freedom robotic arm is used. The robotic arm is controlled so as to align the drill guiding tool attached the robotic arm with the obtained the hole's location. For the safety, the robot's linear and angular velocities are restricted to the predefined values. The experimental results using the artificial bones showed that the position error and the orientation error were 0.91 mm and $1.64^{\circ}$, respectively. The proposed method is simple and easy to implement, thus it is expected to be adopted easily while reducing the radiation exposure significantly.

$WN_x$ Self-Align Gate GaAs LDD MESFET의 제작 및 특성 (Fabrication and its characteristics of $WN_x$ self-align gate GaAs LDD MESFET)

  • 문재경;김해천;곽명현;강성원;임종원;이재진
    • 한국진공학회지
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    • 제8권4B호
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    • pp.536-540
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    • 1999
  • We have developed a refractory WNx self-aligned gate GaAs metal-semiconductor field-effect transistor(MESFET) using $SiO_2$ side-wall process. The MESFET hasa fully ion-implanted, planar, symmetric self-alignment structure, and it is quite suitable for integration. The uniform trans-conductance of 354nS/mm up to Vgs=+0.6V and the saturation current of 171mA/mm were obtained. As high as 43GHz of cut-off frequency hs been realized without any de-embedding of parasitic effects. The refractory WNx self-aligned gate GaAs MESFET technology is one of the most promising candidates for realizing linear power amplifier ICs and multifunction monolithic ICs for use in the digital mobile communication systems such as hand-held phone(HHP), personal communication system (PCS) and wireless local loop(WLL).

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