• Title/Summary/Keyword: 'S-align'

Search Result 149, Processing Time 0.025 seconds

Three point bending test of recycled Nickel-Titanium alloy wires (재생한 니켈 티타늄 호선의 3점 굴곡물성실험)

  • Lee, Sung-Ho;Chang, Young Il
    • The korean journal of orthodontics
    • /
    • v.30 no.6 s.83
    • /
    • pp.731-738
    • /
    • 2000
  • The purpose of this study was to investigate the change of 3 point bending properties of various nickel titanium wires after recycling. Four Types of nickel-titanium (Align: martensitic type, NiTi, Optimalloy, Sentalloy: austenitic type) wires were divided to three groups: as-received condition (T0: control group), treated in artificial saliva for four weeks (T1) and autoclaved after being treated in artificial saliva (T2). Detrimental changes were observed for the selected mechanical properties in three point bending test. Loading force at 3mm deflection, unloading force at 3mm deflection, stress hysteresis, loading force at 1mm deflection, unloading force at 1mm deflection and stress hysteresis at 1mm deflection were calculated. The findings suggest that : 1. Align demonstrated statistically significant increase In loading force (p<0.05) and unloading force (p<0.01) at 3mm deflection after recycling(T2), but NiTi, Optimalloy and Sentalloy showed no statistically difference after recycling. 2. Align demonstrated statistically significant decrease in hysteresis(p<0.01) after recycling(T2) but NiTi, Optimalloy and Sentalloy showed no statistically significant difference after recycling. 3. All wires showed no statistically significant difference in loading force at 1mm deflection after recycling(T2). 4. Align demonstrated statistically significant decrease in unloading force in 1mm deflection (p<0.05) after recycling(T2) but NiTi, Optimalloy and Sentalloy showed no statistically difference after recycling 5. Loading force and unloading force of T1 showed no significant change compared with those of T0, but loading force and unloading force of T2 showed significant changes compared with those of T0(p<0.05, p<0.01 respectively). 6. Align demonstrated a tendency to lose some of this pseudoelasticity in T1 and pseudoplasticity and pseudoelasticity in T2.

  • PDF

A Study on Improving the Accuracy of Wafer Align Mark Center Detection Using Variable Thresholds (가변 Threshold를 이용한 Wafer Align Mark 중점 검출 정밀도 향상 연구)

  • Hyeon Gyu Kim;Hak Jun Lee;Jaehyun Park
    • Journal of the Semiconductor & Display Technology
    • /
    • v.22 no.4
    • /
    • pp.108-112
    • /
    • 2023
  • Precision manufacturing technology is rapidly developing due to the extreme miniaturization of semiconductor processes to comply with Moore's Law. Accurate and precise alignment, which is one of the key elements of the semiconductor pre-process and post-process, is very important in the semiconductor process. The center detection of wafer align marks plays a key role in improving yield by reducing defects and research on accurate detection methods for this is necessary. Methods for accurate alignment using traditional image sensors can cause problems due to changes in image brightness and noise. To solve this problem, engineers must go directly into the line and perform maintenance work. This paper emphasizes that the development of AI technology can provide innovative solutions in the semiconductor process as high-resolution image and image processing technology also develops. This study proposes a new wafer center detection method through variable thresholding. And this study introduces a method for detecting the center that is less sensitive to the brightness of LEDs by utilizing a high-performance object detection model such as YOLOv8 without relying on existing algorithms. Through this, we aim to enable precise wafer focus detection using artificial intelligence.

  • PDF

The Study of Appropriate X-ray Tube Angle for the Anterior-posterior Chest Radiography Using S-align Function (S-align 기능을 이용한 흉부 전·후 방향 검사 시 적절한 X선관 각도에 관한 연구)

  • Park, Myeong-Ju;Joo, Young-Cheol;Kim, Min-Suk;Yuk, Jeong-Won;Kim, Han-Yong;Kim, Dong-Hwan
    • Journal of radiological science and technology
    • /
    • v.45 no.4
    • /
    • pp.299-304
    • /
    • 2022
  • This study uses the 'S-align' function to present a reference value of the X-ray tube angle for the realization of an image similar to that of the chest PA image during chest AP radiography. This study targeted dummy phantom and used a 17"×17" DR image receptor. The irradiation conditions were 110 kVp, 160 mA, 50 ms, and the distance between the central X-ray and the image receptor was set to 180 cm and 110 cm, respectively. The end of the catheter was placed at the 11th thoracic height to indicate the nasogastric tube. In the case of lung apex length measurement, the mean value of measurement was 30.53±0.47 in PA. T 0°, TCA 5~25°, TCE 5~15° were 21.07±0.29, 27.60±0.21, 34.13±0.44, 39.86±0.31, 45.96±0.61 mm, 54.13±0.37 mm, 16.16±0.46 mm, 9.81±0.35 mm, 2.75±0.30 mm, respectively. For the depth of the catheter end, the average value measured at PA was 6.70±0.31 mm. T 0°, TCA 5~25°, TCE 5~15° were 15.72±0.38 mm, 24.10±0.50 mm, 29.24±0.86 mm, 34.35±0.35 mm, 41.06±1.08 mm, 48.07±0.38 mm, 12.85±0.25 mm, 7.92±0.36 mm, 3.01±0.39 mm, respectively. The length of the lung apex was similar to that of chest PA when the angle of incidence was adjusted from 5° to 10° in the leg direction, and the depth of the catheter tip was most similar when the X-ray tube angle was incident at 10° in the head direction. Therefore, To change the X-ray tube angle according to the purpose of the examination during the chest AP radiography using 'S-align' function is considered necessary.

For High Aspect Ratio of Conductive Line by Using Alignment System in Micro Patterning of Inkjet Industry (화상정렬 시스템을 이용한 잉크젯 반복인쇄기술)

  • Park, Jae-Chan;Park, Sung-Jun;Seo, Shang-Hoon;Joung, Jae-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.06a
    • /
    • pp.154-154
    • /
    • 2006
  • Samsung Electro Mechanics ink jet has developed ultra high resolution alignment system. The alignment system has been developed for repeatable printing of conductive ink. The resolution of alignment system is 0.5um and the velocity of printing working plate is 1.5m/s. So far repeated printing results included sintering process have over 30um of drop mislocation data. In order to improve line thickness and conductivity of metal line, we need to develop the higher mechanical accurate align system. On the demand, this developed align system has under $1{\sim}2{\mu}m$ mispositioning performance and can measure of mechanical accuracy of inkjet printer, as well as the straightness of jetted drop from inkjet head. There is no kinds limit of substrate and ink to use SEM alignment system. By using this alignment system, we progress two experiment of reiterate printing drop and making conductive line on the glass and photo paper. Optical microscope and 3D profiler has been used for measurement of printed ink.

  • PDF

Development of a Vision-based Blank Alignment Unit for Press Automation Process (프레스 자동화 공정을 위한 비전 기반 블랭크 정렬 장치 개발)

  • Oh, Jong-Kyu;Kim, Daesik;Kim, Soo-Jong
    • Journal of Institute of Control, Robotics and Systems
    • /
    • v.21 no.1
    • /
    • pp.65-69
    • /
    • 2015
  • A vision-based blank alignment unit for a press automation line is introduced in this paper. A press is a machine tool that changes the shape of a blank by applying pressure and is widely used in industries requiring mass production. In traditional press automation lines, a mechanical centering unit, which consists of guides and ball bearings, is employed to align a blank before a robot inserts it into the press. However it can only align limited sized and shaped of blanks. Moreover it cannot be applied to a process where more than two blanks are simultaneously inserted. To overcome these problems, we developed a press centering unit by means of vision sensors for press automation lines. The specification of the vision system is determined by considering information of the blank and the required accuracy. A vision application S/W with pattern recognition, camera calibration and monitoring functions is designed to successfully detect multiple blanks. Through real experiments with an industrial robot, we validated that the proposed system was able to align various sizes and shapes of blanks, and successfully detect more than two blanks which were simultaneously inserted.

Prediction of Communication Outage Period between Satellite and Earth station Due to Sun Interference

  • Song, Yong-Jun;Kim, Kap-Sung;Jin, Ho;Lee, Byoung-Sun
    • Journal of Astronomy and Space Sciences
    • /
    • v.27 no.1
    • /
    • pp.31-42
    • /
    • 2010
  • We developed a computer program to predict solar interference period. To calculate Sun's position, we used DE406 ephemerides and Earth ellipsoid model. The Sun's position error is smaller than 10arcsec. For the verification of the calculation, we used TU media ground station on Seongsu-dong, and MBSAT geostationary communication satellite. We analysis errors, due to satellite perturbation and antenna align. The time error due to antenna align has -35 to +16 seconds at $0.1^{\circ}$, and -27 to +41 seconds at $0.25^{\circ}$. The time errors derived by satellite perturbation has 30 to 60 seconds.

A Study on the Carbon Nanotube Cartridges Using Electric Field (전기장을 이용한 탄소나노튜브 카트리지 연구)

  • Choi J.S.;Kwak Y.K.;Kim S.H.
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2005.06a
    • /
    • pp.1164-1167
    • /
    • 2005
  • This paper is about the carbon nanotube(CNT) samples called as CNT cartridges. The CNT cartridges are useful to make it better to fabricate the nano-sized devices like nanoprobes and nanotweezers through physical attachment. To make these cartridges, we need to align CNTs and to purify them from raw material. There is a variety of methods to align 1-dimensional nanostructures like nanotubes and nanowires. In this review, we mainly focused on the methods using electric field. And we will introduce various researches in relation to the CNT cartridges and the fabrication methods using the CNT cartridges and nanomanipulation techniques.

  • PDF

Robotic Guidance of Distal Screwing for Intramedullary Nailing Using Optical Tracking System (광학식측정장치를 이용한 금속정 내고정 수술의 원위부 나사체결을 위한 로보틱 유도 시스템)

  • An, Liming;Kim, Woo Young;Ko, Seong Young
    • The Journal of Korea Robotics Society
    • /
    • v.12 no.4
    • /
    • pp.411-418
    • /
    • 2017
  • During the intramedullary nailing procedure, surgeons feel difficulty in manipulation of the X-ray device to align it to axes of nailing holes and suffer from the large radiation exposure from the X-ray device. These problems are caused by the fact the surgeon cannot see the hole's location directly and should use the X-ray device to find the hole's location and direction. In this paper, we proposed the robotic guidance of the distal screwing using an optical tracking system. To track the location of the hole for the distal screwing, the reference marker is attached to the proximal end of an intramedullary nail. To guide the drill's direction robustly, the 6-degree-of-freedom robotic arm is used. The robotic arm is controlled so as to align the drill guiding tool attached the robotic arm with the obtained the hole's location. For the safety, the robot's linear and angular velocities are restricted to the predefined values. The experimental results using the artificial bones showed that the position error and the orientation error were 0.91 mm and $1.64^{\circ}$, respectively. The proposed method is simple and easy to implement, thus it is expected to be adopted easily while reducing the radiation exposure significantly.

Fabrication and its characteristics of $WN_x$ self-align gate GaAs LDD MESFET ($WN_x$ Self-Align Gate GaAs LDD MESFET의 제작 및 특성)

  • 문재경;김해천;곽명현;강성원;임종원;이재진
    • Journal of the Korean Vacuum Society
    • /
    • v.8 no.4B
    • /
    • pp.536-540
    • /
    • 1999
  • We have developed a refractory WNx self-aligned gate GaAs metal-semiconductor field-effect transistor(MESFET) using $SiO_2$ side-wall process. The MESFET hasa fully ion-implanted, planar, symmetric self-alignment structure, and it is quite suitable for integration. The uniform trans-conductance of 354nS/mm up to Vgs=+0.6V and the saturation current of 171mA/mm were obtained. As high as 43GHz of cut-off frequency hs been realized without any de-embedding of parasitic effects. The refractory WNx self-aligned gate GaAs MESFET technology is one of the most promising candidates for realizing linear power amplifier ICs and multifunction monolithic ICs for use in the digital mobile communication systems such as hand-held phone(HHP), personal communication system (PCS) and wireless local loop(WLL).

  • PDF