• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1305-1309
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• 2003

To utilize FeCoSiB amorphous films for magnetoelastic sensors, the temperature dependency of magnetization (M-T curve) and the magnetization properties of the amorphous films were investigated in this study. As the amount of cobalt In the films increased, the Curie temperature decreased but the crystallization temperature increased. In addition to this, the crystallization temperature was lower than the Curie temperature in the film containing 20 at% cobalt. The optimized annealing condition was set up by analyzing the H-T curve. And then, the amorphous film that has excellent magnetic properties and uni-axal anisotropy could be prepared for construction of the magnetoelastic sensor devices. The coercive force of the film was below 0.5 Oe and the anisotripic field was about 5 Oe.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.8
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• pp.1455-1460
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• 2007

This paper reports the piezoelectric microspeakers that are audible in open air with high quality piezoelectric AlN thin film deposited onto Mo/Ti electrode. This successful achievement, compared to the previous results, is followed by manipulating two material properties: the one is to use a compressively stressed silicon nitride film as a supporting diaphragm (even tensile stressed, around +20 MPa) and the another is to use high quality AlN thin film with compressive residual stress (less than -100 MPa). With these materials, the Sound Pressure Level (SPL) of the fabricated micro speakers shows more than 60 dB from 100 Hz to 15 kHz and the highest SPL is about 100 dB at 9.3 kHz with 20 Vpeak-to-peak sinusoidal input and with 10 mm distances from the fabricated micro speakers to the reference microphone (B&K Type 2669 & 4192L).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.50-50
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• 2007

We report the effect of the film thickness on electrical properties of Ti(N) film resistors. The applications of titanium nitride thin film resistor in $\Pi$-type attenuators are also characterized. As film thickness decreases from 100 to 30 nm, temperature coefficient of resistance significantly decreases from -60 to -148 ppm/K, while sheet resistance increases from 37 to $270\;{\Omega}/{\square}$. The characterizations of 20dB-attenuators using thin film resistors are improved in comparison with those using thick film resistors. The $\Pi$-type attenuators using Ti(N) thin film resistors exhibit a attenuation of -19.94 dB and voltage standing wave ratio of 1.16 at a frequency of 2.7 GHz.

• Progress in Superconductivity and Cryogenics
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• v.24 no.4
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• pp.1-5
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• 2022

We investigate the effect of surface disorder on the lower critical field (H_c1) of MgB₂ thin films with a thickness of 850 nm, where the disorder on the surface region is produced by the irradiation of 140 keV Co ions with the dose of 1 × 10¹⁴ ions/cm². The thickness of the damaged region by the irradiation is around 143 nm, corresponding to ~17% of the whole thickness of the film, thereby forming the disordered MgB₂ overlayer on the pure MgB₂ layer. The magnetic field dependence of magnetization, M(H), for the pristine MgB₂ thin film and the film with overlayer is measured at various temperatures, and H_c1 is determined from the difference (△M) between the Meissner line and magnetization signal with the criterion of △M = 10^-3 emu. Intriguingly, the film with the disordered overlayer shows a remarkably large H_c1(0) = 108 Oe compared to the H_c1(0) = 84 Oe of pristine film, indicating that the disordered MgB₂ overlayer on the pure MgB₂ layer serves to prevent the penetration of vortices into the sample. These results provide new ideas for improving the superheating field to design high-performance superconducting radio-frequency cavities.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.204-204
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• 2004

• Korean Journal of Materials Research
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• v.14 no.4
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• pp.246-250
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• 2004

We have investigated the effects of boron added to Cu film on the Cu-Ti reaction and microstructural evolution of Cu(B) alloy film during annealing of Cu(B)/Ti/$SiO_2$/Si structure. The result were compared with those of Cu(B)/$SiO_2$ structure to identify the effects of Ti glue layers on the Boron behavior and the result grain growth of Cu(B) alloy. The vacuum annealing of Cu(B)/Ti/$SiO_2$ multilayer structure allowed the diffusion of B to the Ti surface and forming $TiB_2$ compounds at the interface. The formed $TiB_2$ can act as a excellent diffusion barrier against Cu-Ti interdiffusion up to $800^{\circ}C$. Also, the resistivity was decreased to $2.3\mu$$\Omega$-cm after annealing at $800^{\circ}C$. In addition, the presence of Ti underlayer promoted the growth Cu(l11)-oriented grains and allowed for normal growth of Cu(B) film. This is in contrast with abnormal growth of randomly oriented Cu grains occurring in Cu(B)/$SiO_2$ upon annealing. The Cu(B)/Ti/$SiO_2$ structure can be implemented as an advanced metallization because it exhibits the low resistivity, high thermal stability and excellent diffusion barrier property.

• 한국초전도학회:학술대회논문집
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• v.12
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• pp.6-6
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• 2002

• Microbiology and Biotechnology Letters
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• v.24 no.5
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• pp.546-552
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• 1996

The applicability of chitosan, a biodegradable natural polymer, as the coating material to prevent the dispersal of the spores of the apple white rot agent Botryosphaeria dothidea, was investigated. The physical properties of mixed chitosan/polyvinyl alcohol(PVA) film showed the increased physical properties for film formation, such as tensil strength, elongation, and viscosity, compared to either chitosan or PVA film. The FT-IR spectra of chitosan/PVA film indicated that the film was formed by simple blending not by any new synthetic bond. The chitosan and chitosan/PVA film showed effective antifungal activity on B. dothidea. The formed films were well decomposed by ASTM strains used for biodegradability test, on the other hand, the PVA film could not be decomposed by above standard strains. The field test at apple orchard showed that the dispersal of B. dothidea spores could be effectively reduced by coated film, especially by chitosan/PVA film. The spore dispersal was reduced upto 97.0% by 1.0% chitosan/5.0% PVA film during 4 months.

• Korean Journal of Food Science and Technology
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• v.35 no.5
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• pp.877-883
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• 2003

Multi-degradable master hatch (M/B) was prepared and 0.05 mm polyethylene (PP) food packaging films containing 0, 10, and 20% M/B were manufactured by inflation film processing. The films were exposed to UV radiation, fungi, and heat in order to observe their photolysis, biodegradability, and thermal degradability, respectively. While pure PP film maintained more than 70% of its original elongation after 8 weeks of UV radiation, an almost perfect loss in the elongation of PP film containing 20% M/B was observed. Significant decreases in elongation of PP films by heat treatment $(68{\pm}2^{\circ}C)$ were also found in samples containing the multi-degradable M/B. By observing changes in film surface after the inoculation of fungi using scanning electron microscopy (SEM), the biodegradability of plastic film could be accelerated with the addition of multi-degradable M/B. The results of the mulching test in yard showed that adding multi-degradable M/B can effectively degrade plastic films in natural environmental conditions without interrupting the growth of plants.

• Journal of Radiation Protection and Research
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• v.39 no.4
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• pp.199-205
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• 2014

In the field of neutron detections, $^3He$ gas, the so-called "the gold standard," is the most widely used material for neutron detections because of its high efficiency in neutron capturing. However, from variable causes since early 2009, $^3He$ is being depleted, which has maintained an upward pressure on its cost. For this reason, the demands for $^3He$ replacements are rising sharply. Research into neutron converting materials, which has not been used well due to a neutron detection efficiency lower than the efficiency of $^3He$, although it can be chosen for use in a neutron detector, has been highlighted again. $^{10}B$, which is one of the $^3He$ replacements, such as $BF_3$, $^6Li$, $^{10}B$, $Gd_2O_2S$, is being researched by various detector development groups owing to a number of advantages such as easy gamma-ray discrimination, non-toxicity, low cost, etc. One of the possible techniques for the detection is an indirect neutron detection method measuring secondary radiation generated by interactions between neutrons and $^{10}B$. Because of the mean free path of alpha particle from interactions that are very short in a solid material, the thickness of $^{10}B$ should be thin. Therefore, to increase the neutron detection efficiency, it is important to make a $^{10}B$ thin film. In this study, we fabricated a $^{10}B$ thin film that is about 60 um in thickness for neutron detection using well-known technology for the manufacturing of a thin electrode for use in lithium ion batteries. In addition, by performing simple physical tests on the conductivity, dispersion, adhesion, and flexibility, we confirmed that the physical characteristics of the fabricated $^{10}B$ thin film are good. Using the fabricated $^{10}B$ thin film, we made a proportional counter for neutron monitoring and measured the neutron pulse height spectrum at a neutron facility at KAERI. Furthermore, we calculated using the Monte Carlo simulation the change of neutron detection efficiency according to the number of thin film layers. In conclusion, we suggest a fabrication method of a $^{10}B$ thin film using the technology used in making a thin electrode of lithium ion batteries and made the $^{10}B$ thin film for neutron detection using suggested method.