• 대한방사선기술학회지:방사선기술과학
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• 제24권1호
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• pp.49-53
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• 2001

A number of radionuclides of interest in nuclear medicine are short lived isotopes that emit only gamma ray. The most of all Dept. of Nuclear Medicine in the hospt. are using the $^{99}Mo-^{99m}Tc$ generator for elution of the short lived isotope $^{99m}TcO_4$. A $^{99}Mo-^{99m}Tc$ generator consists of an alumina column on which $^{99}Mo$ is bound. The parent isotope($^{99}Mo$ : half life 67 hr.) decays to its daughter $^{99m}TcO_4^-$ which is a different element with a shorter half-life. $^{99}Mo$ emitted 41-keV(1.3%), 141-keV(5.6%) 181-keV(6.6%) and 366-keV(1.5%) gamma rays. But $^{99m}TcO_4$ emitted only 140-keV gamma ray. We study about the gamma ray distribution around the $^{99}Mo$ generator. And obtained the result as follows ; 1. Total counted gamma ray from generator smaller in front side than back. 2. The gamma ray emitted from $^{99}Mo$ generator without $^{99m}TcO_4$ vial increased in the back side(Mo column posited side) 3. The gamma ray only from the $^{99m}TcO_4$ vial increased in the front side. 4. Apron can protect gamma ray above 60% of total radiation from the $^{99}Mo$ generator.

• 마이크로전자및패키징학회지
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• 제6권3호
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• pp.19-24
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• 1999

이동통신 부품용으로 이용되는 적층 칩 대역통과 필터를 설계, 제작하였으며 설계된 칩 필터의 크기는 4.5 $\times$ 4.4 $\times$ l.8[mm]이고 중심주파수 및 통과대역은 700[MHz]$\pm$15[MHz], 삽입손실은 3.0[dB]이하이다. 적층 칩 필터의 제조는 $BiNbO_4$에 CuO 0.06wt%, $V_2O_5$ 0.lwt%를 첨가한 조성을 이용하였으며 테이프 캐스팅 후 AE 전극을 스크린 프린팅하여 제작하였다. 제작된 칩 필터의 삽입손실과 중심주파수 및 통과대역은 2.58[dB]와 692.5$\pm$15[MHz]로서 중심주파수는 설계 결과보다 7.5[MHz] 낮았으나 그외의 특성은 설계 결과와 유사함을 볼 수 있었다.

• 열처리공학회지
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• 제14권5호
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• pp.292-296
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• 2001

In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

• 한국축산시설환경학회지
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• 제7권2호
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• pp.111-118
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• 2001

This study was performed for measuring the emission of greenhouse gases, $CH_4,\;N_2O$, from the composting process for pig slurry. For the experiment the benchscale pilot plant was designed by 1$m^3$ volume reactor with a closed type and operated; sawdust 142kg filled before input slurry, slurry about 10~20l inputed per day (total 380l), air supplied 5l/min for 24 hours, mixing time 10 min./day and 1 time a day. From the total experiment period(30days), the amount of VS degradation and emission $CH_4$, $N_2O$ were 10.9kg-VS and 1,582.4g-$CH_4$, 68.1g-$N_2O$ respectively. Based on VS inputed the emission of $CH_4$, $N_2O$ were 15.3(g-$CH_4$/kg-V $S_{input}$), 0.7(g-$N_2O$ /kg-V $S_{input}$), and based on VS degradated were 145.2(g-$CH_4$/kg-V $S_{removed}$), 6.2(g-$N_2O$ /kg-V $S_{removed}$).

• 한국재료학회지
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• 제18권12호
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• pp.673-677
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• 2008

Calcia (CaO) stabilized cubic-$HfO_2$ is studied by density functional theory (DFT) with generalized gradient approximation (GGA). When a Ca atom is substituted for a Hf atom, an oxygen vacancy is produced to satisfy the charge neutrality. The lattice parameter of a $2{\times}2{\times}2$ cubic $HfO_2$ supercell then increases by $0.02\;{\AA}$. The oxygen atoms closest to the oxygen vacancy are attracted to the vacancy as the vacancy is positive compared to the oxygen ion. When the oxygen vacancy is located at the site closest to the Ca atom, the total energy of $HfO_2$ reaches its minimum. The energy barriers for the migration of the oxygen vacancy were calculated. The energy barriers between the first and the second nearest sites, the second and the third nearest sites, and the third and fourth nearest sites are 0.2, 0.5, and 0.24 eV, respectively. The oxygen vacancies at the third and fourth nearest sites relative to the Ca atom represent the oxygen vacancies in undoped $HfO_2$. Therefore, the energy barrier for oxygen migration in the $HfO_2$ gate dielectric is 0.24 eV, which can explain the origin of gate dielectric leakage.

• Archives of Pharmacal Research
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• 제24권3호
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• pp.207-210
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• 2001

A fully automated high performance liquid chromatography with column-switching was developed for the simultaneous determination of KR60436, a new reversible proton pump inhibitor, and its active metabolite O-Demethyl-KR60436 from rat plasma samples. Plasma sample (50$\mu$l) was directly introduced onto a Capcell Pak MF Ph-1 column ($10{\times}4$ mm I.D.) where primary separation was occurred to remove proteins and concentrate target Substances Using acetonitrile-Potassium Phosphate (PH 7, 0.1 M) (2 : 8, v/v). The drug molecules eluted from MF Ph-1 column were focused in an intermediate column ($10{\times}2$ I.D.) by the valve switching step. The substances enriched in intermediate column were eluted and separated on a Vydac 218MR53 column ($250{\times}3.2$ I.D.) using acetonitrilepotassium phosphate (pH 7, 0.02 M) (47:53, v/v) at a flow rate of 0.5 ml/min when the valve status was switched back to A position. The method showed excellent sensitivity (detection limit of 2 ng/ml) with small volume of samples ($50{\mu}$l), good precision and accuracy, and speed (total analysis time 24 min) without any loss in chromatographic efficiency. The response was linear ($r^2{\geq}0.797$) over the concentration range of 5-500 ng/ml.

• 한국세라믹학회지
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• 제30권1호
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• pp.17-24
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• 1993

Sol-gel spin-coating technique was used to produce Nb2O5 thin films on silicon substrates from Nb(OC2H5)5 precursor. The films were heat-treated at temperatures between $600^{\circ}C$ and 100$0^{\circ}C$ in oxygen atmosphere and their crystalline phases, chemical states, and dielectric characteristics were investigated by X-ray diffractometry (XRD), Auger electron spectroscopy (AES), and C-V measurements, respectively. After 1 hour heat-treatment at 80$0^{\circ}C$, T-type Nb2O5 was formed, and its chemical composition was homogeneous with no appreciable SiO2 oxide at interfaces between the films and substrates. The films heat-treated at temperatures between $600^{\circ}C$ and 80$0^{\circ}C$ exhibit dielectric constant of less than 20 while the films heat treated at 100$0^{\circ}C$ show dielectric constant of 28.

• 센서학회지
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• 제6권1호
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• pp.24-34
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• 1997

본 연구에서는 비정질 $WO_{3}$ 박막을 작용전극으로 $V_{2}O_{5}$ 박막과 NiO 박막을 각각의 대향전극으로 사용한 두 종류의 상보형 일렉트로크로믹 소자를 제작하고 그 특성을 조사 연구하였다. 그 결과 $100{\sim}150nm$ 두께로 진공증착된 $V_{2}O_{5}$ 박막을 대향전극으로 이용하여 제작된 $ITO/WO_{3}/LiClO_{4}-PC/V_{2}O_{5}/ITO$ 구조의 상보형 소자에서는 $1{\sim}2V$ 정도의 낮은 인가전압에서 광변조량이 $50{\sim}60%$를 나타내는 우수한 특성을 나타냈다. 그리고, RF 반응성 스퍼터링 방법으로 제작된 NiO 박막을 대향전극으로 이용한 $ITO/WO_{3}/LiClO_{4}-PC/NiO/ITO$ 구조의 경우 1.5V의 인가전압에 가시광선 영역(${\lambda}=550nm$)에서 약 25% 정도, 근적외선 영역(${\lambda}=850nm$)에서 약 30% 정도의 태양광을 변조할 수 있는 특성을 보였다.

• Transactions on Electrical and Electronic Materials
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• 제16권4호
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• pp.221-225
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• 2015

The sintering effect on the microstructure, electrical properties, and dielectric characteristics of ZnO-V₂O₅-MnO₂-Nb₂O₅-Dy₂O₃-based ceramics was investigated. With the increase of sintering temperature from 875 to 950℃, the density of the sintered pellets decreased from 5.57 to 5.45 g/cm³ and the average grain size increased from 4.3 to 10.9 μm. The breakdown field decreased noticeably from 6,095 to 996 V/cm with the increase of sintering temperature. The varistor ceramics sintered at 900℃ exhibited the best nonlinear properties: 39.2 in the nonlinear coefficient and 0.24 mA/cm² in the leakage current density. The dielectric constant increased sharply from 658.6 to 2,928.8 with the increase of sintering temperature. On the whole, the dissipation factor exhibited a fluctuation with the increase of the sintering temperature, and a minimum value of 0.284 at 900℃.

• Transactions on Electrical and Electronic Materials
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• 제7권4호
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• pp.189-195
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• 2006

The microstructure, electrical and dielectric properties, and stability against DC accelerated aging stress of the varistors, which are composed of quaternary system $ZnO-Pr_6O_{11}CoO-Cr_2O_3-based$ ceramics, were investigated for different $La_2O_3$ contents. The increase of $La_2O_3$ content led to more densified ceramics, whereas abruptly decreased the nonlinear properties by incorporating beyond 1.0mol%. The highest nonlinearity was obtained from 0.5mol% $La_2O_3$, with the nonlinear coefficient of 81.6 and the leakage current of $0.1{\mu}A$. The varistors doped with 0.5mol% $La_2O_3$ exhibited high stability, in which the variation rates of breakdown voltage, nonlinear coefficient, leakage current, dielectric constant, and dissipation factor were -1.1%, -3.7%, +100%, +1.4%, and +8.2%, respectively, for stressing state of $0.95V_{1mA}/150^{\circ}C/24h$.