Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Microstructure and Varistor Properties of ZVMND Ceramics with Sintering Temperature

  • Nahm, Choon-Woo (Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University)
  • Received : 2015.07.14
  • Accepted : 2015.08.05
  • Published : 2015.08.25
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Abstract

The sintering effect on the microstructure, electrical properties, and dielectric characteristics of ZnO-V2O5-MnO2-Nb2O5-Dy2O3-based ceramics was investigated. With the increase of sintering temperature from 875 to 950℃, the density of the sintered pellets decreased from 5.57 to 5.45 g/cm3 and the average grain size increased from 4.3 to 10.9 μm. The breakdown field decreased noticeably from 6,095 to 996 V/cm with the increase of sintering temperature. The varistor ceramics sintered at 900℃ exhibited the best nonlinear properties: 39.2 in the nonlinear coefficient and 0.24 mA/cm2 in the leakage current density. The dielectric constant increased sharply from 658.6 to 2,928.8 with the increase of sintering temperature. On the whole, the dissipation factor exhibited a fluctuation with the increase of the sintering temperature, and a minimum value of 0.284 at 900℃.

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