• 전기화학회지
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• 제13권2호
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• pp.103-109
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• 2010

$LiNO_3$, $Li(CH_3COO){\cdot}2H_2O$ 그리고 $Mn(CH_3COO)_2{\cdot}4H_2O$를 출발물질로 하여 $Li_4Mn_5O_{12}$를 합성 하였으며 합성방법은 연소합성법을 사용하였다. $Li_4Mn_5O_{12}$는 $400^{\circ}C$ 이상의 열처리 온도에서 얻을 수 있었으나 $400^{\circ}C$로 열처리 하였을 때 $Mn_2O_3$가 같이 존재하는 것을 관찰할 수 있었다. $400^{\circ}C$에서 5시간동안 열처리한 $Li_4Mn_5O_{12}$를 3.7~4.4 V의 전압범위에서 1C-rate로 충방전 하였을 때 가장 좋은 첫 번째 방전용량(41.5 mAh/g)을 나타내었다. 이것을 하이브리드 커패시터에 적용하였을 때 100 mA/g의 전류밀도에서 24.74 mAh/g (10.46 mAh/cc)의 방전용량을 나타내었으며 이때의 에너지 밀도는 39 Wh/kg (16.49Wh/cc)으로 우수하였다.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.473-479
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• 2011

In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.

• 한국분말재료학회지
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• 제20권1호
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• pp.43-47
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• 2013

The extraction of metallic pure vanadium powder from raw oxide has been tried by Mg-reduction. In first stage, $V_2O_5$ powders as initial raw material was reduced by hydrogen gas into $V_2O_3$ phase. $V_2O_3$ powder was reduced in next stage by magnesium gas at 1,073K for 24 hours. After reduction reaction, the MgO component mixed with reduced vanadium powder were dissolved and removed fully in 10% HCl solution for 5 hours at room temperature. The oxygen content and particle size of finally produced vanadium powders were 0.84 wt% and 1 ${\mu}m$, respectively

• 한국환경과학회지
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• 제24권8호
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• pp.1015-1021
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• 2015

In order to establish the design parameters of adsorption for arsenic compounds with hydrotalcite including chlorine ion, the basic properties of adsorption and desorption as well as the oxidation of As (III) were examined in batch tests. The maximum adsorption capacities of arsenite and arsenate were 6.2 mg-As(III)/g and 103 mg-As (V)/g, respectively. Although 80.4% of maximum desorption was shown in 20% NaOH solution, 5~10% of NaOH was recommended considering operating benefits, where the proper condition of the desorption was in the range of 73% to 80%. The most suitable desorption condition was in the combination of NaCl (10~20%) and NaOH (5~10%). Within 2 minutes, As (III) was easily oxidized to As (V) with 0.0001 N KMnO4, where the maximum oxidization ratio was shown to 98.9%.

• 한국식품과학회지
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• 제40권1호
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• pp.63-69
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• 2008

오디 와인의 제조를 위한 최적 발효 조건을 선정하였으며, 발효 중 이화학적 특성 및 anthocyanin 색소의 함량 변화를 조사하였다. 오디 원료의 일반 성분은 수분 83.75%, 조단백질 1.95%, 조지방 0.22%, 회분 0.97%이었으며, pH 4.56, 적정산도 0.50%, 가용성 고형분 13.0 $^{\circ}Brix$, 색도는 명도(L) 8.96, 적색도(a) 6.55, 황색도(b) 4.96으로 나타났다. 주요 유리당으로 fructose와 glucose가 검출되었으며, 주요 유기산으로 citric, malic, succinic acid가 검출되었다. 시험에 사용한 4종 효모 모두 오디 과즙에서 정상적인 알코올 발효를 하였으며, Saccharomyces cerevisiae KCCM 12224로 발효한 오디 와인의 에탄올 생성량과 적색도가 각각 11.0%와 3.60로서 가장 높았다. 가용성 고형분 24 $^{\circ}Brix$와 $26^{\circ}C$에서 발효시 에탄올 생성량, 적정산도 및 적색도 등에서 우수한 특성을 나타냈다. 오디와인의 발효 초기 주요 유리당은 sucrose, fructose 및 glucose 이었으며, 발효기간에 따라 현저히 감소하였다. 유기산 중 citric acid의 함량은 발효 기간 중 비슷하게 유지되었고, malic acid는 감소하였으며, lactic acid와 succinic acid는 증가하였다. 오디 와인의 주요 anthocyanin 색소는 cyanidin-3-glucoside(C-3-G)와 cyanidin-3-rutinoside(C-3-R)가 검출되었으며, C-3-G의 함량은 발효 초기 195.95mg%에서 발효 2일째 15.37 mg%로 급격한 감소를 보였으며, C-3-R은 발효 기간중 점차 감소하여 발효 10일째 45.53 mg%를 나타냈다. 이상의 결과로부터, 오디 와인 제조를 위하여 오디 마쇄액에 $K_2S_2O_5$ 200 ppm을 처리하고, 설탕으로 24 $^{\circ}brix$로 보당한 후 S. cerevisiae KCCM 12224 배양액 3%(v/v)를 접종하여 $26^{\circ}C$에서 8일 동안 발효하는 것이 최적 조건인 것으로 나타났다.

• 전자공학회논문지D
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• 제34D권12호
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• pp.89-100
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• 1997

This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.284-289
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• 2014

The effects of additives (Nb, Bi and Cr) on the microstructure, varistor properties, and aging behavior of V/Mn/Co/ La/Dy co-doped zinc oxide ceramics were systematically investigated. An analysis of the microstructure showed that all of the ceramics that were modified with various additives were composed of zinc oxide grain as the main phase, and secondary phases such as $Zn_3(VO_4)_2$, $ZnV_2O_4$, and $DyVO_4$. The $Bi_2O_3$-modified samples exhibited the lowest density, the $Nb_2O_5$-modified sample exhibited the largest average grain size, and the $Cr_2O_3$-modified samples exhibited the highest breakdown field. All additives improved the non-ohmic coefficient (${\alpha}$) by either a small or a large margin, and in particular an $Nb_2O_5$ additive noticeably increased the non-ohmic coefficient to be as large as 36. The $Bi_2O_3$-modified samples exhibited the highest stability with variation rates for the breakdown field and for the non-ohmic coefficient (${\alpha}$) of -1.2% and -26.3%, respectively, after application of a DC accelerated aging stress of 0.85 EB/$85^{\circ}C$/24 h.

• 한국결정성장학회지
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• 제24권5호
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• pp.213-218
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• 2014

Anatase $TiO_2$에 각기 다른 텅스텐(W) 함유원료와 제조방법을 적용하여 $WO_3$ 촉매가 첨가된 SCR(selective catalytic reduction)용 분말을 합성하였으며, W 촉매 첨가가 합성분말의 상합성 및 SCR 촉매능에 미치는 영향에 대해 연구하였다. 촉매의 지지체인 $TiO_2$는 침전법으로 anatase 상으로 합성되었으며, anatase에서 고온상인 rutile로의 상전이 온도는 $1200^{\circ}C$였으나, $WO_3$를 10 wt% 첨가할 경우 이 상전이 온도는 $900^{\circ}C$로 낮아졌다. 건식으로 $WO_3$ 분말을 직접 첨가하여 $WO_3(10wt%)/TiO_2$를 제조한 경우 $350^{\circ}C$에서 $NO_X$ 제거 촉매능이 최고점에 이르나 온도증가에 따라 그 효율이 상당히 감소하였다. 암모늄-메타-텅스테이트를 습식으로 첨가하여 제조한 경우, 보다 고온인 $450^{\circ}C$에서 촉매능이 최고점에 이르렀으며 온도에 따른 효율감소 폭도 적었다. 이와 같은 경향은 $WO_3$와 $V_2O_5$를 동시 첨가하여 제조한 $V_2O_5(5wt%)-WO_3(10wt%)/TiO_2$ 촉매에서도 나타났다. 즉, 암모늄-메타-텅스테이트를 습식으로 첨가한 경우, $WO_3$를 직접 첨가한 경우에 비해 넓은 온도범위($300^{\circ}C{\sim}500^{\circ}C$)에 걸쳐 90 %에 이상의 우수한 $NO_X$ 변환효율을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.198-199
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• 2006

$SrTa_2O_6$(STA) thin films were fabricated by sol-gel method. The films annealed below $700^{\circ}C$, showed amorphous phase and crystallization phase was observed after annealing over $800^{\circ}C$. From high frequency capacitance-voltage measurements, 24nm thick STA thin film annealed at $900^{\circ}C$, has an EOT of 5.7nm and a dielectric constant of 16. Leakage current characteristics were improved by the insertion of chemical oxide between STA and Si. Leakage current densities are around $3.5{\times}10^{-7}A/cm^2$ at 5V for the structure inserted chemical oxide but $1.4{\times}10^{-6}A/cm^2$ at 5V without chemical oxide.

• 한국전기전자재료학회논문지
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• 제19권3호
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• pp.228-232
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• 2006

In this paper, in order to develop low temperature sintering $PbTiO_3$-system piezoelectric ceramics for thickness-vibration-mode piezoelectric transformer, $Pb_{0.76}Ca_{0.24}[(Mn_{1/3}Sb_{2/3})_{0.04}Ti_{0.96}]O_3$ ceramics using $0.25\;wt\%\;CaCO_3$ and $0.2\;wt\%\;Li_{2}CO_3$ as sintering aids were manufactured according to the variation of poling field. The specimens could be sintered at $930\;^{\circ}C$. The piezoelectric properties were investigated according to the poling field. The maximum properties showed at the field of 6.5 kV/mm, which had kt of 0.49, Qmt of 1816, and $d_{33}$ of 81.4 pC/N.