• Korean Journal of Materials Research
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• v.10 no.12
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• pp.807-811
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• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• Journal of the Korean Ceramic Society
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• v.24 no.2
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• pp.133-138
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• 1987

The behavior of CaO and SiO2 in the reaction produced which produced in the early hydration of C3S was studied by XRD and thermal analyzer. Polymerization of hydrated siltcates was also studied by TMS method. TMS derivatives were separated by gaschromatography. Cao/SiO2 molar ratios of the produced CSH gel under the air atmosphere were higher than that in the CO2. Dimerization rate of hydrated silicates was very fast in the early hydration stage. Trimer began to appear later than dimer and its increasing rate was very low. The amount of dimer and trimer formed under the CO2 atmosphere was less than that in the air.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.325-327
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• 2011

In this paper, nonvolatile nano-floating gate memory devices are fabricated with ZnO nanowires and Al nanoparticles on a $SiO_2/Si$ substrate. Al nanoparticles used as floating gate nodes are formed by the sputtering method. The fabricated device exhibits a threshold voltage shift of -1.5 V. In addition, we investigate the endurance and retention characteristics of the nano-floating gate memory device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.799-802
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• 2003

[ $LaNiO_3$ ](LNO) thin films were deposited on various substrates as Si and $Al_2O_3$ by sol-gel process using lanthanum nitrate and nickel acetate. The structure and orientation of the films were characterized by X-ray diffraction. The orientation factors of films on Si(100), Si(111), $SiO_2/Si(100)$ and $Al_2O_3$were 97%, 63%, 73%, and 24% respective. The conductivity was $7.6{\times}10^{-3}{\Omega}{\cdot}cm$ with 10 times coating at Si(100) substrate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.26-38
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• 1991

The fundamental conditions for growing $r-6Bi_2O_3{\cdot}SiO_2$(BSO) single crystal plates by EFG(Edge-defined Film-fed Growth) method, were investigated and characterization, quality test, property measurement were performed for obtained BSO single crystal plates. The opti$\mu$ growing conditions determined in this study were as follows: ${\cdot}$temperature gradient;$24^{\circ}C/cm$ ${\cdot}$pulling rate;2.0mm/h. BSO Single crystal plates grown at the above optimum conditions did not include secondary phase or grain boundary and were confirmed as single crystals by X-ray analysis. IT was found that the single crystal plates had <100> growth direction. G defects, ie pore, void inclusion, striation, were not detected in the single crystal plate under polarizing microscope but dislocations(microscopic defect) were found and dislocation density was $5.1\times10^5/cm^2$.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.268-272
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• 2015

We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.710-714
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• 2014

The effect of titanium dioxide ($TiO_2$) on the properties of color conversion glasses was examined for glasses based on $BaO-ZnO-B_2O_3-SiO_2$. One glass sample, containing 25 mol% of each component, was used as a reference; the other three glass samples contained 1, 3, and 5 mol% $TiO_2$, respectively. The four color conversion glass samples were prepared by sintering a mixture of glass frits and a $YAG:Ce^+$ phosphor. The characteristics of the color conversion glass samples, such as luminous efficacy, luminance, CIE (Commission International de I'Eclairage) chromaticity, CCT (Correlated Color Temperature), and CRI (Color Rendering Index) were analyzed according to the PL spectrum. The refractive index of the glass samples was found to increase with the titanium dioxide content. In conclusion, luminous efficacy of color conversion glasses increased as the content of $TiO_2$ was raised in the glass matrix.

• Journal of the Korean Ceramic Society
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• v.28 no.12
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• pp.961-968
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• 1991

The nature and composition of the surfaces of silicon nitride and β-Sialon powders were investigated using high voltage and high resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). β-Sialon powder was produced from Hadong kaolin by the carbothermic reduction and simultaneous nitridation. XPS showed that Al was contained in the surface of β-Sialon powder besides Si, N and O components, which is different from that of silicon nitride. It was supposed that Al in the surface of β-Sialon was bonded with oxygen from the oxygen-nitrogen ratio and the measurement of Al 2p binding energies. After both silicon nitride and β-Sialon powders were oxidized at 800℃ for 24h in air, nitrogen didn't exist in the surfaces and the depth of the oxide layer increased. The measurement of Si 2p binding energies showed that the chemical shifts occurred from Si3N2O and/or Si2N2O to SiO2 phase.

• Bulletin of the Korean Chemical Society
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• v.24 no.7
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• pp.1009-1010
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• 2003

• Journal of environmental and Sanitary engineering
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• v.24 no.3
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• pp.55-61
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• 2009

Fe-V is used as raw material of vanadium in the steel making process. The purpose of this study, Fe-V is to replace the $VO_{4}$. So the distribution behavior of vanadium in $VO_{4}$ of the steel investigated. The distribution ratio of the vanadium where potential of the free oxygen ion will increase in slag decreased. When CaO and MgO content which is a basic oxide from CaO-$SiO_2$-FetO-MgOsatd. slag increases, S distribution ratio increases. CaO-$SiO_2$-FetO-MgOsatd. slag better than CaO-$SiO_2$-$Al_2O_3$-MgO slag is the recovery of vanadum and desulfurization.