• Communications of the Korean Mathematical Society
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• v.21 no.2
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• pp.261-272
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• 2006

In this paper, we define the sequence spaces: $[V,{\lambda},f,p]_0({\Delta}^r,E,u),\;[V,{\lambda},f,p]_1({\Delta}^r,E,u),\;[V,{\lambda},f,p]_{\infty}({\Delta}^r,E,u),\;S_{\lambda}({\Delta}^r,E,u),\;and\;S_{{\lambda}0}({\Delta}^r,E,u)$, where E is any Banach space, and u = ($u_k$) be any sequence such that $u_k\;{\neq}\;0$ for any k , examine them and give various properties and inclusion relations on these spaces. We also show that the space $S_{\lambda}({\Delta}^r, E, u)$ may be represented as a $[V,{\lambda}, f, p]_1({\Delta}^r, E, u)$ space. These are generalizations of those defined and studied by M. Et., Y. Altin and H. Altinok [7].

• The Journal of Natural Sciences
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• v.5 no.1
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• pp.1-3
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• 1992

G가 compact Lie 군이고 $\pi$ : $E to S^1$이 $S^1$ 상의 G-line bundle 일때, 군 작용이 없다면, 부드러운 trivial G-line bundle $E to S^1$ 은 S(V) $\times$ $\delta to S(V)$ 와 동치이고 부드러운 nontrivial G-line bundle $E to S^1$ 은 S(V) $\times$$z_2$ $\delta to S(V)$/$Z_2$=P(V)와 동치 이다.

• Phonetics and Speech Sciences
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• v.2 no.3
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• pp.23-27
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• 2010

The purpose of this study was to find how English vowels /a, e, i, o, u/ affect the production of English labials /p, b, f, v/ by Korean learners of English. Sixty syllables were composed by five vowels and four labials in the syllable types CV, VC, and VCV. The nonsense syllables were produced three times by nine subjects. The major results show that (1) in inter-vocalic position, the subjects had higher scores in producing /v/ composed with /a, e, o/ and /u/, while subjects had lower scores in producing /p/ with /i/ and /o/, (2) in post-vocalic position, the subjects had higher scores in producing /v/ and /f/ with /a, e/, and /o/, while subjects had lower scores in producing /b/ with /e/ and /i/, and (3) in pre-vocalic position, the subjects had higher scores in producing /v/ with /e, o, u/ and /f/ with /u/, while subjects had lower scores in producing /b/ with /e/, /i/ and /u/. The results suggest that on the whole, Korean learners of English have much difficulty in producing /p/ with /i/ in inter-vocalic condition and /b/ with /i, /e/ in pre-vocalic position.

• Journal of applied mathematics & informatics
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• v.27 no.5_6
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• pp.1157-1163
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• 2009

Let G be a graph with vertex set V(G) and let f be a nonnegative integer-valued function defined on V(G). A spanning subgraph F of G is called a fractional f-factor if $d^h_G$(x)=f(x) for all x $\in$ for all x $\in$ V (G), where $d^h_G$ (x) = ${\Sigma}_{e{\in}E_x}$ h(e) is the fractional degree of x $\in$ V(F) with $E_x$ = {e : e = xy $\in$ E|G|}. In this paper it is proved that if ${\delta}(G){\geq}{\frac{b^2(k-1)}{a}},\;n>\frac{(a+b)(k(a+b)-2)}{a}$ and $|N_G(x_1){\cup}N_G(x_2){\cup}{\cdots}{\cup}N_G(x_k)|{\geq}\frac{bn}{a+b}$ for any independent subset ${x_1,x_2,...,x_k}$ of V(G), then G has a fractional f-factor. Where k $\geq$ 2 be a positive integer not larger than the independence number of G, a and b are integers such that 1 $\leq$ a $\leq$ f(x) $\leq$ b for every x $\in$ V(G). Furthermore, we show that the result is best possible in some sense.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.188-188
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• 2011

MgO는 암염구조의 이온결합성 화합물로 7.8 eV의 높은 띠 틈과 약 95%의 탁월한 투과도를 갖는다. 또한, ${\gamma}$ process에 의한 이차 전자 방출이 높고 이온 스퍼터링에 의한 표면 손상이 적어 면 방전 AC-PDP의 보호막으로 이용된다. 따라서 MgO 보호막에 관한 연구는 이차 전자 방출 계수를 높여 방전 전압을 감소시키고 높은 유전율과 투과도를 유지시키기 위한 목적으로 전개되어지고 있다. 본 연구는 이온 스퍼터링에 의한 MgO 보호막의 표면 특성의 변화를 알아보기 위해 이루어졌다. MgO 박막은 electron beam evaporation의 방법을 통해 챔버 내에 O 기체를 주입하고 P type Si 기판을 300$^{\circ}C$ 가열하여 40 nm 두께로 제작되었다. 박막 시료는 표면분석 전 초고진공챔버 내에서 표면에 산화된 불순물 제거를 위해 550$^{\circ}C$의 열처리가 되어졌다. 그리고 250 eV의 He 이온으로 박막 표면을 스퍼터링 하여 XPS, REELS, UPS를 이용하여 전자 및 광학적 특성을 연구하였다. XPS 분석을 통해 MgO 박막은 He 이온 스퍼터링에 의해 표면의 화학적 조성이 변하지 않는다는 것을 확인했다. MgO 박막에 이온 스퍼터링을 하면 표준 시료와 비교하여 Ep=1,500 eV일 때 7.54 eV에서 7.63 eV로 높아지는 경향이 있다. 일함수는 He 이온 스퍼터링 한 결과 3.85 eV로부터 4.09 eV로 약간 높아졌다. 또한, QUEELS simulation으로 얻은 가시광 투과도는 91~92%로 분석되었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.678-686
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• 2001

Origins for the transconductance dispersion and the gate leakage current in a GaAs metal semiconductor field effect transistor were found using capacitance deep-level transient spectroscopy (DLTS) measurements. In DLTS spectra, we observed two surface states with thermal activation energies of 0.65 $\times$ 0.07 eV and 0.88 $\times$ 0.04 eV and an electron trap EL2 with thermal activation energy of 0.84 $\times$ 0.01 eV. Transconductance was decreased in the frequency range of 5.5 Hz ~ 300 Hz. The transition frequency shifted to higher frequencies with the increase of temperature and the activation energy for the change of the transition frequency was determined to be 0.66 $\times$ 0.02 eV. From the measurements of the gate leakage current as a function of the device temperature, the forward and reverse currents are coincident with each other below gate voltages lower than 0.15 V, namely Ohmic behavior between gate and source/drain electrodes. The activation energy for the conductance of electrons on the surface of MESFET was 0.63 $\times$ 0.01 eV. Comparing activation energies obtained by different measurements, we found surface states H1 caused the transconductance dispersion and the fate leakage current.

• Journal of Korean Ophthalmic Optics Society
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• v.11 no.3
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• pp.165-172
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• 2006

On the MgO single crystals doped artificially with Cr, Cu, Fe we observed thermally stimulated luminescence(TSL) glow curves and spectra, and analyzed them in the temperatures range from at liquid nitrogen temperature(77K) to about 500K after excitation with UV or X-ray irradiation. TSL glow curves obtained from these samples show five peaks at 136.5K, 223.5K, 360K, 390K, 440K, and their estimated activation energies are 0.27eV, 0.63eV, 1.08eV, 1.08eV, 1.19eV, and 1.33eV, respectively. When we measured TSL spectrum at the range of 200nm to 650nm on the MgO single crystals. we also analyzed the peak wavelength which obtained at 345nm, 375nm, and 410nm from measurement of TSL spectrum and described their luminescence mechanisms. TSL spectrum peaks emitted from MgO:Cr, MgO:Cu, and MgO:Fe appear at the wavelengths of 345nm, 360nm, and 375nm, respectively.

• Korean Journal of Crystallography
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• v.12 no.4
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• pp.197-206
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• 2001

A stoichiometric mixture of evaporating materials for AgInS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. AgInS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE)system. The source and substrate temperatures were 680℃ and 410℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS₂ single crystal thin film mea-sured from Hall effect by van der Pauw method are 9.35×10/sup 16/㎤ and 294㎠/V·s at 293K respectively. The temperature dependence of the energy band gap of the AgInS₂ obtained from the absorption spectra was well described by the Varshni's relation , E/sub g/(T)=2.1365eV-(9.89×10/sup-3/eV/K/)T²(T+2930K). The crystal field and the spin-orbit splitting energies for the valence band of the AgInS₂ have been estimated to be 0.1541eV and 0.0129 eV, respectively, by means of the photocur-rent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the Γ/sub 5/ states of the valence band of the AgInS₂ /GaAs epilayer. The three photo-current peaks ovserved at 10K are ascribed to the A₁-, B-₁and C₁-exction peaks for n=1.

• The Korean Journal of Physiology and Pharmacology
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• v.14 no.1
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• pp.45-49
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• 2010

R-type $Ca_v2.3$ high voltage-activated $Ca^{2+}$ channels in peripheral sensory neurons contribute to pain transmission. Recently we have demonstrated that, among the six $Ca_v2.3$ isoforms ($Ca_v2.3a{\sim}Ca_v2.3e$), the $Ca_v2.3e$ isoform is primarily expressed in trigeminal ganglion (TG) nociceptive neurons. In the present study, we further investigated expression patterns of $Ca_v2.3$ isoforms in the dorsal root ganglion (DRG) neurons. As in TG neurons, whole tissue RT-PCR analyses revealed the presence of two isoforms, $Ca_v2.3a$ and $Ca_v2.3e$, in DRG neurons. Single-cell RT-PCR detected the expression of $Ca_v2.3e$ mRNA in 20% (n=14/70) of DRG neurons, relative to $Ca_v2.3a$ expression in 2.8% (n=2/70) of DRG neurons. $Ca_v2.3e$ mRNA was mainly detected in small-sized neurons (n=12/14), but in only a few medium-sized neurons (n=2/14) and not in large-sized neurons, indicating the prominence of $Ca_v2.3e$ in nociceptive DRG neurons. Moreover, $Ca_v2.3e$ was preferentially expressed in tyrosine-kinase A (trkA)-positive, isolectin B4 (IB4)-negative and transient receptor potential vanilloid 1 (TRPV1)-positive neurons. These results suggest that $Ca_v2.3e$ may be the main R-type $Ca^{2+}$ channel isoform in nociceptive DRG neurons and thereby a potential target for pain treatment, not only in the trigeminal system but also in the spinal system.

• Korean Journal of Materials Research
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• v.19 no.9
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• pp.510-515
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• 2009

The compound of 2,6-Bis[(9-phenylcarbazolyl)ethenyl]naphthalene (BPCEN-1), 2-[6-{1-Cyano-2-(9-phenylcarbazoly)vinyl}naphthyl]-3-(9-phenylcarbazolyl)acrylonitrile (BPCEN-2), 2,6-Bis[{4-(1-naphthy l)phenylamino} styrenyl] naphthalene (BNPASN-1), 2-[6-{1-Cyano-2-(naphthylphenylaminophenyl) vinyl}naphthyl]-3-(naphthylphenylaminophenyl)acrylonitrile (BNPASN-2) was analyzed electrochemically and spectroscopically and can be obtained by bonding phenylcarbazolyl, naphthylphenylaminophenyl and -CN ligands to 2,7-naphthalene. The electrochemical and spectroscopic study resulted in the P-type (BPCEN-1, BNPASN-1) being changed to N-type (BPCEN-2, BNPASN-2) according to -CN bonding despite having the same structure. The value of band gap(Eg) was revealed to be small as HOMO had shifted higher and LUMO lower. The Eg value for naphthylphenylaminophenyl ligand was reduced because it has a smaller HOMO/LUMO value than that of phenylcarbazolyl from a structural perspective. The electrochemical HOMO/LUMO values for BPCEN-1, BPCEN-2, BNPASN-1, BNPASN-2 were measured to be 5.55eV / 2.83eV, 5.73eV / 3.06eV, 5.48eV / 2.78eV, and 5.53eV / 2.98eV, respectively. By -CN ligand, the UV max, Eg and PL max were shifted to longer wavelength in their spectra and the luminescence band could be also confirmed to be broad in the photoluminescence (PL) spectrum.