• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1787-1790
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• 1996

• Communications of the Korean Mathematical Society
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• v.30 no.3
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• pp.313-325
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• 2015

An H-magic labeling in a H-decomposable graph G is a bijection $f:V(G){\cup}E(G){\rightarrow}\{1,2,{\cdots},p+q\}$ such that for every copy H in the decomposition, $\sum{_{{\upsilon}{\in}V(H)}}\;f(v)+\sum{_{e{\in}E(H)}}\;f(e)$ is constant. f is said to be H-V -super magic if f(V(G))={1,2,...,p}. In this paper, we prove that complete bipartite graphs $K_{n,n}$ are H-V -super magic decomposable where $$H{\sim_=}K_{1,n}$$ with $n{\geq}1$.

• Journal of the Chungcheong Mathematical Society
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• v.8 no.1
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• pp.173-181
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• 1995

Let H and G be finite dimensional semisimple Hopf algebras and let A and B be left H and G-module algebras respectively. We use smash product algebras to show that 1) if A is right Artinian then $A^H$ is right Artinian, 2) $Soc\;V_A{\subset}Soc\;V_{A^H}$ and rad $V_A{\supset}\;radV_{A^H}$, 3) $K\;dim\;_BV_A=K\;dim\;_{B^G}V_{A^H}$.

• Journal of the Korean Chemical Society
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• v.18 no.4
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• pp.259-266
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• 1974

Isotopic experiments using $H_2O^{18}$ on the oxidation of V(III) in acid perchlorate by molecular oxygen were performed in the range pH 1.0 to 3.0. At pH < 2, where a rate equation of the form TEX>$ -\frac{d[V(III)]}{dt}=k_1\frac{[O_2][V(III)]}{[H^+]}$ is adequate, the tracer study clearly indicated that all the product vanadyl ion's ($VO^{2+}$) oxygen originated from the molecular oxygen. At pH > ~2, where a different rate expression of the form $-\frac{d[V(III)]}{dt}=K_2\frac{[O_2][V(III)]^2}{[Ht]^2}$is required, the isotopic experiment showed that half the vanadyl oxygen originated from the molecular oxygen. Considering the results of the isotopic study, a mechanism for the V(Ⅲ)-O2 reaction at pH < ~2, may be suggested as follows: The tracer results at pH > ~2 imply that the rate determining step may be $$ V_2(OH)_2^{4+} + O_2 \rightarrow 2VO^{2+} + H_2O_2$$ followed by $$V_2(OH)_2^{4+} + H_2O_2 \rightarrow 2VO^{2+} + 2H_2O$$ after establishing the equilibria V^{3+} + H_2O \leftrightarrow VOH^{2+} + H^+, and 2VOH^{2+}\leftrightarrow V_2(OH)_2^{4+}$$

• Journal of the Korean Chemical Society
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• v.28 no.6
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• pp.361-365
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• 1984

The long-lived collision model has been applied to the resonant vibration-vibration energy exchange process $H^{79}$Br(v = 1) + $H^{81}Br$(v = 0) ${\to}$ $H^{79}Br$(v = 0) + $H^{81}Br$(v = 1) + ${\Delta}E\;=\;0.38 cm^{-1}$ The energy exchange probabilities have been calculated over the temperature range from 200 to 800K. They show negative temperature dependence (P ${\propto}\;T^{-1.8}$) and agree with the available experimental data better than those calculated from other theories.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.415-416
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• 2016

본 논문은 입출력 전력품질이 우수하고 전압별 시리즈화가 용이한 Cascaded H-브릿지 멀티레벨 전력 회로를 적용한 고압 대용량 전동기 구동용 11,000V / 13,800V 고압인버터 개발에 관하여 기술하였다. 기존에 개발된 3,300V/200kVA - 6,600V/8,000kVA 고압인버터의 단상 인버터로 구성된 개별 파워 셀 전압 증대, 파워 셀의 직렬 갯수 추가, 입력 위상 전이 다권선 변압기 2차 권선수 확장, 그리고 분산 제어 기능을 확대하는 방식을 적용하여 전압을 증가시켰다. 실용량 제품의 제작 (11,000V/1,000kVA, 13,800V/2,400kVA) 및 실험을 통하여 개발된 11,000V/13,800V 고압인버터의 성능을 확인하였다.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1238_1239
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• 2009

본 논문에서는 ELA poly-Si TFT보다 뛰어난 균일도를 갖고, a-Si:H TFT보다 전기적 안정도가 우수한 PMOS SPC-Si TFT의 특성을 연구하였다. SPC-Si의 계면 특성을 향상 시키기 위해 $SiO_2$ 게이트 절연막을 증착하기 전에 Solid Phase Crystalline 실리콘(SPC-Si) 채널 영역에 다양한 H2 플라즈마 처리를 해주었다. PECVD를 이용하여 100W에서 H2 플라즈마 처리를 5분 해주었을 때 SPC-Si TFT의 전기적 특성이 향상되는 것을 볼 수 있는데, $V_{TH}$가 약 -3.91V, field effect mobility가 $22.68cm^2$/Vs, 그리고 Subthreshold swing이 0.64 정도를 보였다. 또한 소자에 Hot carrier stress($V_{GS}$=14.91V, $V_{DS}$=-15V, for 2,000sec)를 주었을 때도 전기적 특성이 변하지 않았으며, 일정한 bias stress($V_{GS}$=-15V, $V_{DS}$=-10V, for 2,000sec)를 가하였을 때도 $V_{TH}$가 증가하지 않았다. 이러한 결과를 통해 SPC-Si가 poly-Si TFT보다 더욱 안정함을 알 수 있었다.

• Journal of Microbiology and Biotechnology
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• v.17 no.12
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• pp.1944-1948
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• 2007

Silkworm hemolymph (SH), prepared from fifth-instar larvae of Bombyx mori and heat-treated at $60^{\circ}C$ for 30 min, was used to improve cell viability and the production of human cytotoxic T-lymphocyte antigen 4-immunoglobulin (hCTLA4Ig) in transgenic Oryza sativa L. cell suspension cultures. Even though SH could not elevate cell viability at the concentrations up to 3% (v/v), addition of 0.3% (v/v) SH to a culture medium enhanced the production of hCTLA4Ig by 36.8% over an SH-free medium. Moreover, the production period of hCTLA4Ig could be shortened in a 0.3% (v/v) SH-added medium compared with that in an SH-free culture. As a result, addition of 0.3% (v/v) SH improved the productivity of hCTLA4Ig significantly in transgenic rice cell cultures.

• Journal of the Korean Chemical Society
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• v.30 no.6
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• pp.532-537
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• 1986

The kinetics of the reaction of $[Mo_2O_4(H_2O)_6]^{2+}$ with $VO_2^+$ have been studied at $25^{\circ}C$ by spectrophotometric method. Stoichiometry of the oxidation of$ [Mo_2O_4(H_2O)_6]^{2+}$ is followed as $Mo_2^V + 2V^V {\rightleftharpoons} 2Mo^{VI} + 2V^{IV}$. Observed rate constants are dependent on $ [H^+]\;and\;[VO_2^+]$. Mechanism for the redox of $[Mo_2O_4(H_2O)_6]^{2+}\;and\;VO_2^+$ is proposed and discussed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..