• Korean Journal of Acupuncture
• /
• 제23권1호
• /
• pp.15-36
• /
• 2006

Objectives . The aim of this study was to examine the effect of electroacupuncture(EA) at the ST36 on normal humans by using power spectral analysis. Methods : EEG(Electroencephalogram) power spectral exhibits site-specific and state-related differences in specific frequency bands. In this study, power spectrum was used as a measure of complexity. 32 channel EEG study was carried out in 12 subjects (10 males; age=26.7 years old, 2females; age=28 years old). Results ; In ${\alpha}$ (alpha) band, the power values at Fp2, F7, F3, Fz, FTC1, FTC2, T3, C3, Cz, C4, TT1, TCP1, CP1, CP2,T5, P3, Pz, P4, Po1, Po2, O1, Oz,O2 channels(p<0.05) during the ST36-acupoint treatment were significantly increased. In ${\beta}$ (beta) band, the power values at Fp2, F7, F3, Fz, F4, F8, FTC1, FTC2, T3, C3, Cz, C4, TT1, TCP1, CP1, CP2, T5, P3, Pz, P4, Po1, Po2, O1, Oz, O2 channels(p<0.05) during the ST36-acupoint treatment were significantly decreased. In ${\delta}$ (delta) band, the power values at F7, Fz, T3, C3, TT1, TCP1, CP1, CP2, T5, P3, Pz,T6, Po1, PO2,O1, Oz, O2 channels(p<0.05) during the ST36-acupoint treatment were significantly decreased. In ${\theta}$(theta) band, the power values at F7, Fz, FTC1, T3, TCP1, CP2, TCP2, Po1, Po2 channels(p<0.05) during the ST36-acupoint treatment were significantly decreased. ${\alpha}$/${\beta}$ values at Cz, T5, O1, Oz, O2 channels during the ST36-acupoint treatment were increased. ${\beta}$/${\theta}$ values at Fpl, F7, F3, Fz, F4, F8, FTC1, FTC2, T3, C3, C4, T4, TT1, TCP1, TCP2, TT2, P3, P4, T6, Pol channels during the ST36-acupoint treatment were increased. Conclusions : This results suggest that Electroacupuncture at the ST36 mostly affects the charge on alpha(23 channels), beta(25 channels) bands.

• 한국수학교육학회지시리즈B:순수및응용수학
• /
• 제27권1호
• /
• pp.25-33
• /
• 2020

In this paper, we consider the following quadratic (ρ₁, ρ₂)-functional equation (0, 1) $$N(2f({\frac{x+y}{2}})+2f({\frac{x-y}{2}})-f(x)-f(y)-{\rho}_1(f(x+y)+f(x-y)-2f(x)-2f(y))-{\rho}_2(4f({\frac{x+y}{2}})+f(x-y)-f(x)-f(y)),t){\geq}{\frac{t}{t+{\varphi}(x,y)}}$$, where ρ₂ are fixed nonzero real numbers with ρ₂ ≠ 1 and 2ρ₁ + 2ρ₂≠ 1, in fuzzy normed spaces. Using the fixed point method, we prove the Hyers-Ulam stability of the quadratic (ρ₁, ρ₂)-functional equation (0.1) in fuzzy Banach spaces.

• Journal of Periodontal and Implant Science
• /
• 제30권3호
• /
• pp.687-700
• /
• 2000

Antigen-specific T cell clones were obtained from mice immunized with Fusobacterium nucleatum ATCC 10953(F .nucleatum) and/or Porphyromonas gingi valis 381(P. gingivalis). 10 Balb/c mice per group were immunized with F. nucleatum followed by P. gingivalis, or with P. gingivalis alone by intraperitoneal injection of viable microorganisms. Spleen T cells were isolated and stimulated in vitro with viable P. gingivalis cells to establish P. gingivalisspecific T cell clones. T cell phenotypes and cytokine profiles were determined along with T cell responsiveness to F .nucleatum or P. gingivalis. Serum IgG antibody titers to F. nucleatum or P. gingivalis were also determined by ELISA. All the T cell clones derived from mice immunized with F. nucleatum followed by P. gingivalis demonstrated Th2 subsets, while those from mice immunized with P. gingivalis alone demonstrated Th1 subsets based on the flow cytometric analysis and cytokine profiles, All T cells clones from both groups were cross-reactive to both P. gingivalis and F. nucleatum antigens. Phenotypes of T cell clones were all positive for CD4. Mean post-immune serum IgG antibody levels to F. nucleatum or P . gingivalis were significantly higher than the pre-immune levels(p <0.01, respectively). There were no significant differences in the antibody titers between the two groups. It was concluded that P. gingivalis-specific T cells initially primed by cross-reactive F. nucleatum antigens were polarized to Th2 subsets, while T cells stimulated with P. gingivalis alone maintained the profile of Th1 subset.

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 2007년도 High Temperature Superconductivity Vol.XVII
• /
• pp.37-37
• /
• 2007

• Kyungpook Mathematical Journal
• /
• 제46권2호
• /
• pp.219-229
• /
• 2006

Using the integral average method, we establish some oscillation criteria for the nonlinear differential equation with damped term $$a(t)|{x}^{\prime}(t)|^{\sigma-1}{x}^{\prime}(t)^{\prime}+p(t)|{x}^{\prime}(t)|^{\sigma-1}{x}^{\prime}(t)+q(t)f(x(t))=0,\;{\sigma}>1$$, where the functions $a,\;p$ and $q$ are real-valued continuous functions defined on $[t_o,{\infty})$ with $a(t)>0,\;f(x){\in}C^1(\mathbb{R})$ and $\frac{f^{\prime}(u)}{|f^{({\sigma}-1)/{\sigma}}(u)|}{\geq}k>0$ for $u{\neq}0$.

• 대한수학회논문집
• /
• 제20권4호
• /
• pp.645-648
• /
• 2005

Let K be a Galois extension of a field F with G = Gal(K/F). Let L be an extension of F such that $K\;{\otimes}_F\;L\;=\; N_1\;{\oplus}N_2\;{\oplus}{\cdots}{\oplus}N_k$ with corresponding primitive idempotents $e_1,\;e_2,{\cdots},e_k$, where Ni's are fields. Then G acts on $\{e_1,\;e_2,{\cdots},e_k\}$ transitively and $Gal(N_1/K)\;{\cong}\;\{\sigma\;{\in}\;G\;/\;{\sigma}(e_1)\;=\;e_1\}$. And, let R be a commutative F-algebra, and let P be a prime ideal of R. Let T = $K\;{\otimes}_F\;R$, and suppose there are only finitely many prime ideals $Q_1,\;Q_2,{\cdots},Q_k$ of T with $Q_i\;{\cap}\;R\;=\;P$. Then G acts transitively on $\{Q_1,\;Q_2,{\cdots},Q_k\},\;and\;Gal(qf(T/Q_1)/qf(R/P))\;{\cong}\;\{\sigma{\in}\;G/\;{\sigma}-(Q_1)\;=\;Q_1\}$ where qf($T/Q_1$) is the quotient field of $T/Q_1$.

• 대한수학회지
• /
• 제60권1호
• /
• pp.167-193
• /
• 2023

Let f be a self-dual primitive Maass or modular forms for level 4. For such a form f, we define N^s_f(T):=|{ρ ∈ ℂ : |𝕵(ρ)| ≤ T, ρ is a non-trivial simple zero of L_f(s)}|.. We establish an omega result for N^s_f(T), which is $N^s_f(T) = \Omega(T^{\frac{1}{6}-{\epsilon}})$ for any ∊ > 0. For this purpose, we need to establish the Weyl-type subconvexity for L-functions attached to primitive Maass forms by following a recent work of Aggarwal, Holowinsky, Lin, and Qi.

• 한국콘텐츠학회논문지
• /
• 제15권2호
• /
• pp.292-300
• /
• 2015

본 연구는 여대생의 체중조절행위와 비만스트레스를 파악하고자 2013년 9월 7일부터 9월 13일까지 경상남도 C시 소재 4개 대학에 재학 중인 여대생 213명을 대상으로 설문지를 배부하여 자료를 수집하였다. 수집된 자료는 SPSS 20.0 프로그램을 이용하여 빈도와 백분율, t-검증(t-test), 일원분산분석(ANOVA), 사후 검증(Scheffe's-test)을 실시하였다. 본 연구결과 대상자의 비만스트레스 정도는 $18.26{\pm}5.66$으로 중간정도로 나타났다. 대상자의 일반적 특성 및 체중조절행위 특성에 따른 비만스트레스와의 차이는 경제상태(F=3.99, p=.020), 체형인식(F=14.41, p<.001), 체형 체격 만족도(F=15.88, p<.001), 체중조절관심도(F=4.82, p=.001), 음식량 조절(F=2.41, p=.050), 체형 체격 강박(F=24.06, p<.001), 식이요법경험(F=6.04, p<.001), 평균수면시간(t=2.10, p=.036), 원하는 체중 감량정도(F=10.47, p<.001)에 따라 유의한 차이가 있었다. 따라서 여대생을 대상으로 올바른 체중인식과 체중조절 프로그램의 개발 시에는 비만스트레스와 관련한 다양한 특성들을 고려하여 개발하는 것이 필요하다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.1034-1037
• /
• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2003년도 하계학술대회 논문집 C
• /
• pp.1598-1600
• /
• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$ The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ (<$200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC vanes with $T_f$.