• Title/Summary/Keyword: $c_a/c_c$

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Characteristics of poly 3C-SiC doubkly clamped beam micro resonators (양단이 고정된 빔형 다결정 3C-SiC 마이크로 공진기의 특성)

  • Ryu, Kyeong-Il;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.217-217
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    • 2009
  • This paper describes the characteristics of polycrystalline 3C-SiC doubly clamped beam micro resonators. The polycrystalline 3C-SiC doubly clamped beam resonators with 60 ~ 100 ${\mu}m$ lengths, $10\;{\mu}m$ width, and $0.4\;{\mu}m$ thickness were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonant frequency was measured by a laser vibrometer in vacuum at room temperature. For the 60 ~ 100 ${\mu}m$ long cantilevers, the fundamental frequency appeared at 373.4 ~ 908.1 kHz. The resonant frequencies of doubly clamped beam with lengths were higher than simulated results because of tensile stress. Therefore, polycrystalline 3C-SiC doubly clamped beam micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

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Crystal growth of 3C-SiC on Si(100) Wafers (Si(100)기판상에 3C-SiC결정성장)

  • Chung, Yun-Sik;Chung, Gwiy-Sang;Nishino, Shigehiro
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1593-1595
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    • 2002
  • Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

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Induction of Secondary Metabolites by Virginiamycin Inducing Factor, Virginiae Butanolide C (Virginiamycin 생합성 유도인자 Virginiae butanolide C에 의한 2차 대사산물 생산의 유도)

  • 김현수;강선영
    • Microbiology and Biotechnology Letters
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    • v.22 no.5
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    • pp.459-466
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    • 1994
  • Virginiae butanolide C(VB-C) is one of the butyrolactone autoregulators, which triggers the production of virginiamycin in Streptomyces virginiae. Streptomyces longwoodensis was selected as a test strain to investigate new VB-C functions. When 100 ng/ml of the synthetic VB-C was added into the culture at 5 hour and 0 hour, the initial production time of antibiotics and a dark blue pigment were shortened by 4~6 hours and 2~4 hours, respectively. HPLC analysis revealed the production of several new antibiotics by VB-C addition. In the SDS-PAGE analysis of the total protein from mycelium several new protein bands showed up and the amounts of certain protein bands increased in the presense of VB-C. The existence of specific VB-C binding protein was confirmed from S. longwoodensis in relation to VB-C signal transduction. These results suggest that the VB-C might have an ability to induce the production of secondary metabolites in Streptomy- ces longwoodensis.

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A Measure of Process Incapability Index (비공정능력지수의 측도에 관한 연구)

  • 김진수;김홍준;송서일
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.22 no.49
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    • pp.77-87
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    • 1999
  • A simple transformation of the $C^{*}$$_{pm}$, $C_{pp}$ can be regard as a process incapability index, provides an uncontaminated separation between information concerning the process accuracy and precision while this kind of information separation is not available with the $C^{*}$$_{pm}$. Recently, Kyung-seok Shin et. al. introduced an improved process incapability index $C^{*}$$_{pmk}$ by the transformation of the $C_{pmk}$. Accordingly, in this article process incapability index $C^{*}$$_{psk}$ will be proposed by the transformation of the $C_{psk}$. The motivation behind introduction of $C^{*}$$_{psk}$ is that $C_{psk}$ has failed to overcome is that it cannot distinguish process of high conforming output proportions from those of low conforming output proportions. Process incapability index $C^{*}$$_{psk}$ can identify a difference between two things by comparison on $C_{psk}$ and $C^{*}$$_{psk}$.EX>$_{psk}$.EX>$_{psk}$.

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The Geometry of the Space of Symmetric Bilinear Forms on ℝ2 with Octagonal Norm

  • Kim, Sung Guen
    • Kyungpook Mathematical Journal
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    • v.56 no.3
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    • pp.781-791
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    • 2016
  • Let $d_*(1,w)^2 ={\mathbb{R}}^2$ with the octagonal norm of weight w. It is the two dimensional real predual of Lorentz sequence space. In this paper we classify the smooth points of the unit ball of the space of symmetric bilinear forms on $d_*(1,w)^2$. We also show that the unit sphere of the space of symmetric bilinear forms on $d_*(1,w)^2$ is the disjoint union of the sets of smooth points, extreme points and the set A as follows: $$S_{{\mathcal{L}}_s(^2d_*(1,w)^2)}=smB_{{\mathcal{L}}_s(^2d_*(1,w)^2)}{\bigcup}extB_{{\mathcal{L}}_s(^2d_*(1,w)^2)}{\bigcup}A$$, where the set A consists of $ax_1x_2+by_1y_2+c(x_1y_2+x_2y_1)$ with (a = b = 0, $c={\pm}{\frac{1}{1+w^2}}$), ($a{\neq}b$, $ab{\geq}0$, c = 0), (a = b, 0 < ac, 0 < ${\mid}c{\mid}$ < ${\mid}a{\mid}$), ($a{\neq}{\mid}c{\mid}$, a = -b, 0 < ac, 0 < ${\mid}c{\mid}$), ($a={\frac{1-w}{1+w}}$, b = 0, $c={\frac{1}{1+w}}$), ($a={\frac{1+w+w(w^2-3)c}{1+w^2}}$, $b={\frac{w-1+(1-3w^2)c}{w(1+w^2)}}$, ${\frac{1}{2+2w}}$ < c < ${\frac{1}{(1+w)^2(1-w)}}$, $c{\neq}{\frac{1}{1+2w-w^2}}$), ($a={\frac{1+w(1+w)c}{1+w}}$, $b={\frac{-1+(1+w)c}{w(1+w)}}$, 0 < c < $\frac{1}{2+2w}$) or ($a={\frac{1=w(1+w)c}{1+w}}$, $b={\frac{1-(1+w)c}{1+w}}$, $\frac{1}{1+w}$ < c < $\frac{1}{(1+w)^2(1-w)}$).

Characteristics of polycrystalline 3C-SiC thin films grown on AlN buffer layer for M/NEMS applications (AlN 버퍼층위에 성장된 M/NEMS용 다결정 3C-SiC 박막의 특성)

  • Chung, Gwiy-Sang;Kim, Kang-San;Lee, Jong-Hwa
    • Journal of Sensor Science and Technology
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    • v.16 no.6
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    • pp.457-461
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    • 2007
  • This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on $SiO_{2}$ and AlN substrates, respectively. The crystallinity and the bonding structure of poly 3C-SiC grown on each substrate were investigated according to various growth temperatures. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_{2}$ and AlN were not different. However, their electron mobilities were $7.65{\;}cm^{2}/V.s$ and $14.8{\;}cm^{2}/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_{2}$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

Physicochemical tolerance ranges and ecological characteristics in two different populations of Carassius auratus and Cyprinus carpio

  • Kang, Seung Gu;Choi, Ji-Woong;An, Kwang-Guk
    • Journal of Ecology and Environment
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    • v.38 no.2
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    • pp.195-211
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    • 2015
  • The objectives of this research were to determine mean and maximum tolerance ranges of Carassius auratus ($C_a$) and Cyprinus carpio ($C_c$) populations on various physico-chemical parameters and ecological indicator metrics. Little is known about chemical tolerance ranges of the two species, even though these species are widely distributed species in aquatic ecosystems. Maximum tolerance ranges of $C_a$-population to total nitrogen (TN) and total phosphorus (TP) were $20.3mgL^{-1}$ and $2.0mgL^{-1}$, respectively. Optimal ranges of TN and TP in the $C_a$-population were $1.7-5.0mgL^{-1}$ and $0.06-0.30mgL^{-1}$, respectively. Such nutrient regimes of the $C_a$-population were evaluated as hypereutrophy, indicating high tolerance limits. The $C_c$-population had similar ecological characteristics to $C_a$-population, but the mean tolerance ranges of TN, TP, BOD, and COD were significantly (p < 0.05) greater than the $C_a$-population. Ecological patterns of trophic composition and tolerance guilds in the $C_a$-population were similar to those of the $C_c$-population. The model value of Index of Biological Integrity (IBI) of the habitat where C. auratus and C. carpio co-occurred averaged $15.0{\pm}4.3$ and $12.9{\pm}3.6$, respectively. Based on the modified criteria of the United States Environmental Protection Agency (Klemm et al. 1993), it indicated poor ecological health of both species. These results suggest that both species are highly tolerant to chemical and physical habitat conditions of waterbodies, and that the chemical tolerance range of $C_c$-population was higher than $C_a$-population.

Changes of Chlorophyll and SOD-like Activities of Chinese Chives Dehydrated at Different Heat Treatments (부추의 건조 온도 조건별 클로로필, Superoxide Dismutase 유사활성의 변화)

  • Kwak, Yeon-Ju;Kim, Jong-Sang
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.38 no.7
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    • pp.879-884
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    • 2009
  • Allium tuberosum Rotter (Liliaceae, Chinese chives) is a perennial herb of which leaves are used for food. This study investigated the effect of pretreatment on quality of dehydrated Chinese chives. Chinese chives was blanched at $80^{\circ}C$ for 20 sec, followed by drying at $70^{\circ}C$, $80^{\circ}C$, $100^{\circ}C$, or drying at $100^{\circ}C$ for 30 min and subsequent drying at $70^{\circ}C$, or $100^{\circ}C$ for 60 min and subsequent drying at $70^{\circ}C$. Optimum drying temperature and time was $100^{\circ}C$ for 30 min and subsequent drying at $70^{\circ}C$, or $100^{\circ}C$ for 60 min and subsequent drying at $70^{\circ}C$. These conditions were shortened time for dehydration and showed smaller decrease than others in Hunter color L, a, b. Dehydrated Chinese chives showed a constant decrease in greenness with storage, probably due to destruction of chlorophyll by light. In the measurement of Hunter color L, a, b, these conditions showed smaller decrease than others in Hunter color for 15 week storage. Chlorophyll content and SOD (superoxide dismutase)-like activity in that condition was higher than others. It was assumed that a phenolic compound that forms its thermostable activity. The fitness of drying models was conducted in order to explain reducing chlorophyll loss and SOD (superoxide dismutase)-like activity loss. Based upon the chlorophyll content, SOD-like activity, and retention of green color of the vegetable, optimum drying conditions was $100^{\circ}C$ for 30 min followed by $100^{\circ}C$ for 30 min and subsequent drying at $70^{\circ}C$, or $100^{\circ}C$ for 60 min and subsequent drying at $70^{\circ}C$.

Formation of porous 3C-SiC thin film by anodization with UV-LED (양극산화법과 UV-LED를 이용한 다공성 3C-SiC 박막 형성)

  • Kim, Kang-San;Chung, Gwiy-Sang
    • Journal of Sensor Science and Technology
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    • v.18 no.4
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    • pp.307-310
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    • 2009
  • This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS(Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 $\sim$ 90 nm was achieved at 7.1 mA/cm$^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 cm$^{-1}$. PL shows the band gap enegry of thin film(2.5 eV) and porous 3C-SiC(2.7 eV).

Effects of Hot Pressing Condition on the Properties of SiCf/SiC Composites (SiCf/SiC 복합체의 특성에 미치는 열간가압소결 조건의 영향)

  • Noviyanto, Alfian;Yoon, Dang-Hyok
    • Journal of the Korean Ceramic Society
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    • v.48 no.5
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    • pp.335-341
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    • 2011
  • Continuous SiC fiber-reinforced SiC-matrix composites ($SiC_f$/SiC) had been fabricated by electrophoretic infiltration combined with ultrasonication. Nano-sized ${\beta}$-SiC added with 12 wt% of $Al_2O_3-Y_2O_3$ additive and Tyranno$^{TM}$-SA3 fabric were used as a matrix phase and fiber reinforcement, respectively. After hot pressing at 5 different conditions, the density, microstructure and mechanical properties of $SiC_f$/SiC were characterized. Hot pressing at relatively severe conditions, such as $1750^{\circ}C$ for 1 and 2 h, resulted in a brittle fracture behavior due to the strong fiber-matrix interface in spite of their high flexural strength. On the other hand, toughened $SiC_f$/SiC composite could be achieved by hot pressing at milder condition because of the formation of weak interface in spite of the decreased flexural strength. These results proposed the importance of weak fiber-matrix interface in the fabrication of ductile $SiC_f$/SiC composite.