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http://dx.doi.org/10.5369/JSST.2009.18.4.307

Formation of porous 3C-SiC thin film by anodization with UV-LED  

Kim, Kang-San (School of Electrical Eng., University of Ulsan)
Chung, Gwiy-Sang (School of Electrical Eng., University of Ulsan)
Publication Information
Journal of Sensor Science and Technology / v.18, no.4, 2009 , pp. 307-310 More about this Journal
Abstract
This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS(Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 $\sim$ 90 nm was achieved at 7.1 mA/cm$^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 cm$^{-1}$. PL shows the band gap enegry of thin film(2.5 eV) and porous 3C-SiC(2.7 eV).
Keywords
porous 3C-SiC; anodization; polycrystalline 3C-SiC;
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Times Cited By KSCI : 1  (Citation Analysis)
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