• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.853-855
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• 1998

The electrical resistivity and mechanical properties of the hot-pressed and annealed ${\beta}$-SiC+39vol.%$ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_{2}O_{3}+Y_{2}O_{3}$(6:4wt%). In this microstructures. no reactions were observed between $\beta$-SiC and $ZrB_2$, and the relative density is over 97.6% of the theoretical density. Phase analysis of composites by XRD revealed mostly of a $\alpha$-SiC(6H, 4H), $ZrB_2$ and weakly $\beta$-SiC(15R) phase. The fracture toughness decreased with increased $Al_{2}O_{3}+Y_{2}O_{3}$ contents and showed the highest for composite added with 4wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives. The electrical resistivity increased with increased $Al_{2}O_{3}+Y_{2}O_{3}$ contents because of the increasing tendency of pore formation according to amount of liquid forming additives $Al_{2}O_{3}+Y_{2}O_{3}$. The electrical resistivity of composites is all positive temperature coefficient resistance(PTCR) against temperature up to $700^{\circ}C$.

• Journal of Ceramic Processing Research
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• v.19 no.6
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• pp.504-508
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• 2018

Diopside is a ceramic material with excellent physical and chemical properties. However, when it is applied as an LED packaging material, heat dissipation of the LED element is not sufficient due to its relatively lower thermal conductivity, which may cause degradation of the LED function. In this study, glass-ceramics based on a $ZrO_2-CaO-MgO-SiO_2$ system, in which diopside is the main crystal phase, were prepared by heat-treating the glass, which was composed of zircon ($ZrO_2-SiO_2$) powders and diopside ($CaO-MgO-2SiO_2$) powders. The possibility of using the glass-ceramics as a packaging material for LEDs was then investigated by analyzing the density, shrinkage, thermal conductivity, and phases generated according to the amount of zircon powder added. The density and shrinkage of specimens decreased slightly and then increased again with the amount of $ZrO_2-SiO_2$ added within a range of 0~0.38 mol. Even though the crystal phase of zircon does not appear in the $ZrO_2-CaO-MgO-SiO_2$ system, the glass containing 0.38 mol zircon powder showed the highest thermal conductivity, 1.85 W/mK, among the specimens fabricated in this study: this value was about 23% higher than that of pure diopside. It was found that the thermal conductivity of the glass-ceramics based on a $ZrO_2-CaO-MgO-SiO_2$ system was closely related to the density, but not to the phase type. Zirconia ($ZrO_2$), a component oxide of zircon, plays an important role in increasing the density of the specimen. Furthermore the thermal conductivity of glass-ceramics based on a $ZrO_2-CaO-MgO-SiO_2$ system showed a nearly linear relationship with thermal diffusivity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.6
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• pp.229-234
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• 2018

The glass-ceramic of $Li_2O-Al_2O_3-SiO_2$ system was synthesized by using $ZrO_2$, $ZrSiO_4$, $ZrOCl_2$ and $Zr(SO_4)_2$, which is a raw material of Zr serving as a nucleation agent. It was confirmed that Avrami parameter of these four glasses is over 3 for bulk crystallization. The glass synthesized by $ZrOCl_2$, and $Zr(SO_4)_2$ showed high melting quality during the melting process. It is also observed that the Zr component is uniformly distributed in the glass. Various characterizations was evaluated, including composition analysis and bending strength.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.2
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• pp.98-103
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• 1999

The effect of $Al_2O_3$ additives to $\beta-SiC+39vol.%ZrB_2$ electroconductive ceramic composites by pressureless sintering on microstructural, mechanical and electrical properties were investigated. The $\beta-SiC+39vol.%ZrB_2$ ceramic composites were pressureless sintered by adding 4, 8, 12wt.% $Al_2O_3$ powder as a liquid forming additives at $1950^{\cire}C$ for 1h. Phase analysis of composites by XRD revealed mostly of $\alpha-SiC(6H), ZrB_2$ and weakly $\alpha-SiC(4H), \beta-SiC (15R)$ phase. The relative density of composites was lowered by gaseous products of the result of reaction between \beta-SiC and Al_2O_3$, therefore, porosity was increased with increasing $Al_2O_3$ contents, and showed the maximum value of 1.4197MPa.$m^{1/2}$ for composite with 4wt.% $Al_2O_3$ additives. The electrical resistivity of $\beta-SiC+39vol.%ZrB_2$ electroconductive ceramic composite was increased with increasing $Al_2O_3$ contents, and showed positive temperature coefficient resistance (PTCR) in the temperature range of $25^{\cire}C$ to $700^{\cire}C$.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.847-849
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• 1998

The effect of $Al_{2}O_{3}$ additives on the microstructure, mechanical and electrical properties of ${\beta}$-SiC+39vol.%$ZrB_2$ electroconductive ceramic composites by pressureless sintering were investigated. The ${\beta}$-SiC+39vol.%$ZrB_2$ ceramic composites were pressureless sintered by adding 4, 8, 12wt.% $Al_{2}O_{3}$ powder as a liquid forming additives at $1950^{\circ}C$ for 1h. Phase analysis of composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and weakly $\alpha$-SiC(4H), $\beta$-SiC(15R) phase. The relative density of composites was lowered by gaseous products of the result of reaction between $\beta$-SiC and $Al_{2}O_{3}$ therefore, porosity was increased with increased $Al_{2}O_{3}$ contents. The fracture toughness of composites was decreased with increased $Al_{2}O_{3}$ contents, and showed the maximum value of $1.4197MPa{\cdot}m^{1/2}$ for composite added with 4wt.% $Al_{2}O_{3}$ additives. The electrical resistivity of ${\beta}$-SiC+39vol.%$ZrB_2$ electroconductive ceramic composite was increased with increased $Al_{2}O_{3}$ contents, and showed positive temperature coefficient resistance (PTCR) in the temperature from $25^{\circ}C$ to $700^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.42 no.9 s.280
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• pp.624-630
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• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.1
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• pp.8-19
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• 2022

The metallic implant materials are widely used in biomedical industries due to their specific mechanical strenth, corrosion registance, and superior biocompatability. These metallic materials, however, suffer from the stress-shielding effect and the generation of artifacts in the magnetic resonance imaging exam. In the present study, we develope a Zr-based alloys for the biomedical implant materials with low elastic modulus and low magnetic susceptibility. The Zr-7Si-xSn alloys were fabricated by an arc melting process. The elastic modulus was 24~31 GPa of the zirconium-based alloy. The average magnetic susceptibility value of the Zr-7Si-xSn alloy was 1.25 × 10^-8cm³g^-1. The average I_corr value of the Zr-7Si-xSn alloy was 0.2 ㎂/cm². The Sn added zirconium alloy, Zr-7Si-xSn, is very interested and attractive as a biomaterial that reduces the stress-shielding effect caused by the difference of elastic modulus between human bone and metallic implant.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.211-211
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• 2010

지난 수년간 비휘발성 메모리는 휴대용 전자기기 시장의 증가로 인해 많은 주목을 받아왔다. 그러나 현재 주로 쓰이고 있는 다결정 실리콘을 부유게이트층을 이용한 소자는 한계점을 보이고 있다. 이러한 이유로 최근에는 반도체 나노점이나 금속 나노점을 이용하는 비휘발성 메모리가 각광을 받고 있다. 이 메모리들은 빠른 쓰기/지우기 속도, 긴 저장시간, 낮은 구동전압 등의 이점을 지니고 있다. 본 연구에서는 이온빔 스퍼터링 방법을 이용해 $SiO_2$/Zr nanodots (ND)/$SiO_2$ trilayer 구조를 제작하였다. tunnel oxide와 control oxide의 두께는 각각 3nm, 15nm 이며 Zr의 양을 변화시키며 그에 따른 Zr ND과 메모리 효과의 변화를 관찰하였다. 고분해능 전자현미경과 광전자 분광기를 이용해 Zr ND의 형성을 확인하였고 열처리 후 $ZrO_2$ ND로 상이 변화함을 관찰하였다. -10 ~ +10V의 측정 조건 하에서 Zr의 양이 증가함에 따라 메모리 폭은 최대 5.8V까지 증가하였다. 또한 쓰기 상태에서 메모리 폭과 전하 손실비율은 열처리 후가 감소하였고 이는 $SiO_2$와 Zr ND의 계면에서 생성되는 $ZrO_2$의 영향인 것으로 생각된다.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.3
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• pp.273-278
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• 2012

$ZrB_2$ has a melting temperature of $3245^{\circ}C$ and a low density of $6.1\;g/cm^3$, which makes this a candidate for application to ultra-high temperature over $2000^{\circ}C$. Beside these properties, $ZrB_2$ has excellent resistance to thermal shock and oxidation compared with other non-oxide engineering ceramics. This paper reviewed briefly 2 research examples, which are related to densification and properties of $ZrB_2$-based ceramics for ultra-high temperature applications. In the first section, the effect of $B_4C$ addition on the densification and properties of $ZrB_2$-based ceramics is shown. $ZrB_2$-20 vol.% SiC system was selected as a basic composition and $B_4C$ or C was added to this system in some extents. With sintered bodies, densification behavior and hightemperature (up to $1400^{\circ}C$) properties such as bending strength and hardness are examined. In the second section, the effect of the SiC size on the microstructures and physical properties is shown. $ZrB_2$-SiC ceramics are fabricated by using various SiC sources in order to investigate the grain-growth inhibition and the mechanical/thermal properties of $ZrB_2$-SiC.

• Journal of the Korean Ceramic Society
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• v.44 no.4 s.299
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• pp.219-223
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• 2007

The ionic conductivity of $Li_2O-ZrO_2-SiO_2$ glasses has been designed and analyzed on the basis of a mixture design experiment with constraints. Fitted models for the activation energy and the ionic conductivity are as follows: $Q(kJ/moi)=54.8565x_1+144.825x_2+133.846x_3-170.908x_1x_3-334.338x_2x_3$ $log{\sigma}(300K)=-5.00245x_1-1.17876x_2-15.5173x_3+17.4522x_1x_3$. The electrical properties are very sensitive to the ratio of $Li_2O/SiO_2$. The effect of $ZrO_2$ is less than that of this ratio but $ZrO_2$ component attributes to the reduction of the activation energy. The optimal composition for best ionic conduction based on these fitted models is $55Li_2O{\cdot}10ZrO_2{\cdot}35SiO_2$. Its activation energy and ionic conductivity at 300 K are 46.98 kJ/mol and $1.08{\times}10^{-5}{\Omega}^{-1}{\cdot}cm^{-1}$, respectively.