• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.1-5
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• 2006

The effect of A/B moi ratios and sintering temperatures on dielectric properties and microstructure of $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_3$ ceramics were investigated. The dielectric constant decreased with increasing the A/B mol ratio. However, the dielectric loss is improved. As the dielectric properties of A/B mol ratio with m = 1.009 at sintered temperature $1260^{\circ}C$, we obtained dielectric constant 12,800, dielectric loss $3.5\%$ and Y5V temperature characteristics. Highly reliable Ni-MLCCs, 1.6mm$(length){\time}0.8mm(width){\time}0.8mm$(height) with capacitance of 1.23 ${\mu}F$ and 야ssipation loss of $5.2\%$ were obtained employing dielectric material composed of $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_3$ - $MnO_2\;0.2wt\%-Y_2O_3\;0.18wt\%,\;-\;SO_2\;0.15wt\%-(Ba_{0.4}Ca_{0.6})SiO_3\;1wt\%$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.808-815
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

• Macromolecular Research
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• v.12 no.3
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• pp.316-321
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• 2004

We have performed copolymerizations of ethylene with 1-hexene using various ansa-metallocene compounds in the presence of the non-coordinative [CPh$_3$][B(C$\_$6/F$\_$5/)$_4$ion pair as a cocatalyst. The metallocenes chosen for this study are isospecific metallocene diamide compounds, rac-(EBI)Zr(NMe$_2$)$_2$ [1, EBI = ethylene-l ,2-bis(1-indenyl)], rac-(EBI)Hf(NMe$_2$)$_2$ (2), rac-(EBI)Zr(NC$_4$H$\_$8/)$_2$ (3), and rac-(CH$_3$)$_3$Si(1-C$\_$5/H$_2$-2-CH$_3$-4-$\^$t/C$_4$H$\_$9/)2 Zr(NMe$_2$)$_2$ (4), and syndiospecific metallocene dimethyl compounds, ethylidene(cyclopentadienyl)(9-fluorenyl) ZrMe$_2$ [5, Et(Flu)(Cp )ZrMe$_2$] and isopropylidence (cyclopentadienyl)(9-fluorenyl)ZrMe$_2$ [6, iPr(Flu)(Cp)ZrMe$_2$]. The copolymerization rate decreased in the order 4 ＞1-3＞2 ＞5＞6. The reactivity of I -hexene decreased in the order 2 ＞6＞1- 3-5＞ 4. We characterized the microstructure of the resulting poly(ethylene-co-l-hexene) by $\^$l3/C NMR spectroscopy and investigated various other properties of the copolymers in detail.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.224-225
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• 2006

The Ethylene polymerization behavior of a series of polymethylene bridged dinuclear CGC $[Zr({\eta}^{5}:{\eta}^{1}-C_{9}H_{5}SiMe_{2}NCMe_{3})Me_{2}]_{2}[(CH_{2})_{n}]\;[_{n}=6(1),\;9(2),\;12(3)]$ in the cocatalytic activation with $Ph_{3}C^{+}B^{-}(C_{6}F_{5})_{4}\;(B_{1})\;or\;Ph_{3}C^{+}(C_{6}F_{5})_{3}B^{-}C_{6}F_{4}B^{-}(C_{6}F_{5})_{3}Ph_{3}C^{+}\;(B_{2})\;or\;B(C_{6}F_{5})_{3}\;(B_{3})$ were investigated to study the nuclearity effects as well as the counteranion effects. The ethylene polymerization and ethylene/1-hexene copolymerization were conducted at $30^{\circ}C$ It was found that both in ethylene polymerization and ethylene/1-hexene copolymerization, activities increased in the order of 1 < 2 < 3, which indicates the presence of longer bridge between two active sites contributes more efficiently to facilitate the polymerization activity.

• Journal of Surface Science and Engineering
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• v.36 no.1
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• pp.14-21
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• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.336-340
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• 1999

Glasses in the system $CaO-TiO_2-SiO_2-Al_2O_3-ZrO_2-B_2O_3$ were investigated to find the glass seal compositions suitable for use in the planar solid oxide fuel cell (SOFC). Glass-ceramics prepared from the glasses by one-stage heat treatment at $1,000^{\circ}C$ showed various thermal expansion coefficients (i,e., $8.6\times10^{-6^{\circ}}C^{-1}$ to $42.7\times10^{-6^{\circ}}C^{-1}$ in the range 25-$1,000^{\circ}C$) due to the viscoelastic response of glass phase. The average values of contact angles between the zirconia substrate and the glass particles heated at 1,000-$1,200^{\circ}C$ were in the range of $131^{\circ}\pm4^{\circ}$~$137^{\circ}\pm9^{\circ}$, indicating that the glass-ceramic was in partial non-wetting condition with the zirconia substrate. With increasing heat treatment time of glass samples from 0.5 to 24 h at $1,100^{\circ}C$, the DC electrical conductivity of the resultant glass-ceramics decreased from at $800^{\circ}C$. Isothermal hold of the glass sample at $1100^{\circ}C$ for 48h resulted in diffusion of Ca, Si, and Al ions from glass phase into the zirconia substrate through the glass/zirconia bonding interface. Glass phase and diffusion of the moving ion such as $Ca^{2+}$ in glass phase is responsible for the electrical conduction in the glass-ceramics.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.24-27
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• 2000

Ferroelectric P $b_{0.99}$〔(Z $r_{0.6}$S $n_{0.4}$)$_{0.9}$ $Ti_{0.1}$〕$_{0.98}$N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on (L $a_{0.5}$S $r_{0.5}$)Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole％. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ were crystallized to a perovskite phase after rapid thermal annealing(RTA) The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 ％.0 ％.％.0 ％.0 ％.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1474-1476
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta$-Sic-$ZrB_2$ electroconductive ceramic composites were investigated as function of the liquid forming additives of $Al_{2}O_{3}+Y_{2}O_{3}$. Phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $ZrB_2$, and YAG($Al_{5}Y_{3}O_{12}$). The relative density of composites were increased with increasing $Al_{2}O_{3}+Y_{2}O_{3}$ contents. The flexural strength showed the highest value of 390.6MPa for composites added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. Owing to crack deflection, crack bridging. phase transition and YAG of fracture toughness mechanism. the fracture toughness showed the highest value of 6.3MPa${\cdot}m^{1/2}$ for composites added with 24wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance (PTCR) in the temperature range of 25$^{\circ}C$ to 900$^{\circ}C$.

• Polymer(Korea)
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• v.31 no.6
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• pp.497-504
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• 2007

We have prepared the dinuclear half-sandwich CGC(constrained geometry catalyst) with polymethylene bridge $[Zr(({\eta}^5\;:\;{\eta}^1-C_9H_5SiMe_2NCMe_3)Me_2)_2\;[(CH_2)_n]$ [n=6(4), 9(5), 12(6)] by treating 2 equivalents of MeLi with the corresponding dichlorides compounds. To study the catalytic behavior of the dinuclear catalysts we conducted copolymerization of ethylene and 1-hexene in the presence of three kinds of boron cocatalysts, $Ph_3C^+[B(C_6F_5)_4]^-\;(B_1),\;B(C_6F_5)_3\;(B_3)$, and $Ph_3C^+[(C_6F_5)_3B-C_6F_4-B(C_6F_5)_3]^{2-}\;(B_2)$. It turned out that all active species formed by the combination of three dinuclear CGCs with three cocatalyst were very efficient catalysts for the polymerization of olefins. The activities increase as the bridge length of the dinuclear CGCs increases. At the same time the dinuclear cocatalyst exhibited the lowest activity among three cocatalysts. The prime observation is that the dinuclear cocatalyst gave rise to the formation of the copolymers with the least branches on the polyethylene backbone.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.7
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• pp.473-478
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• 2001

Ferroelectric P $b_{0.99}$［(Z $r_{0}$ 6S $n_{0.4}$)/0.9/ $Ti_{0.1}$］0.98/N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on L $a_{0.5}$S $r_{0.5}$Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films annealed at various temperature and time were investigated. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 %..10 %......