The Effects of Oxygen Partial Pressure and Post-annealing on the Properties of ZnO-SnO2 Thin Film Transistors (ZnO-SnO2 투명박막트랜지스터의 특성에 미치는 산소분압 및 후속열처리의 영향)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.25 no.4
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- pp.304-308
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- 2012