• 공업화학
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• 제29권6호
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• pp.710-715
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• 2018

본 연구에서는 자성을 이용하여 재수득이 가능한 광 촉매 물질인 $ZnFe_2O_4@SnO_2@TiO_2$ core-shell nanoparticles (NPs)를 3단계 과정을 통해 합성하였다. 구조적 특성은 X-ray diffraction (XRD) 분석으로 확인하였다. Spinel 구조의 $ZnFe_2O_4$와 tetragonal 구조의 $SnO_2$와 anatase 구조의 $TiO_2$가 합성된 것을 확인하였다. 합성한 물질의 자기적 성질은 vibrating sample magnetometer (VSM)으로 확인하였다. Core 물질인 $ZnFe_2O_4$의 포화자화 값은 33.084 emu/g으로 확인하였다. $SnO_2$와 $TiO_2$층의 형성의 결과, 두께 증가로 인한 자성은 각각 33, 40% 감소하였으나 재수득이 가능한 충분한 자성을 가지는 것을 확인하였다. 합성된 물질의 광 촉매 효율은 methylene blue (MB)를 사용하여 측정하였다. Core 물질의 효율은 4.2%로 확인하였고 $SnO_2$와 $TiO_2$ shell 형성의 결과 각각 73%와 96%로 증가하였고 높은 광 촉매 효율을 가지는 것을 확인하였다. 또한 항균 특성은 대장균(E. Coli)과 황색포도상구균(S. Aureus)을 사용하여 억제 영역을 확인하였다. Shell이 형성되면서 더 넓은 억제 영역이 형성되었고 이는 광 촉매 효율을 측정한 결과와 일치하는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.79-79
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• 2009

Samples of Ta-doped in $In_2O_3-ZnO-SnO_2$(IZTO) with a doping level up to 4wt% were sintered at $1600^{\circ}C$ in $O_2$. The crystal phase of the samples was identified by an X-ray diffraction experiment. apparent density and porosity with sintered temperature from $1500^{\circ}C$ to $1640^{\circ}C$ are mesured by archimedes method. For each sample, the specific resistivity was determined. samples of sintered at $1600^{\circ}C$ had the highest density and lowest porousity and The Ta 0.25-wt%-doped IZTO ceramics had the lowest resistivity.

• 센서학회지
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• 제29권6호
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• pp.420-426
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• 2020

A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO₂ nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO₂ seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO₂ seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.

• 공업화학
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• 제5권2호
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• pp.327-336
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• 1994

본 연구는 아크롤레인의 선택산화반응에서 Mo-V-O와 금속산화물의 기계적 혼합촉매에 대한 synergy 효과를 고찰한 것으로 금속산화물로는 $SnO_2$, ${\alpha}-Sb_2O_4$, $WO_3$, ${\alpha}-Al_2O_3$, CuO, $MnO_2$, $Cu_2O$, MgO, CoO 그리고 ZnO 등을 사용하였다. $SnO_2$나 ${\alpha}-Sb_2O_4$와 Mo-V-O의 혼합물 촉매는 Mo-V-O보다 높은 전화율과 수율을 나타내었는데 이것은 이들이 산소 빈자리에 해리 홉착된 산소를 형성하여 Mo-V-O에 전달하는 상간협동에 의한 것으로 판단된다 그러나 $Cu_2O$, MgO, CuO, $MnO_2$와 Mo-V-O의 혼합물 촉매의 경우 전화율은 증가하였으나 수율은 감소하였고, CoO와 ZnO는 Mo-V-O의 촉매성능을 억제하였다. 각 금속산화물의 역할이 서로 다른 점을 그들의 산화-환원 특성으로 설명하였다.

• 한국전기전자재료학회논문지
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• 제27권5호
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• pp.297-302
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• 2014

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrode thin films with a resistivity of ~ 1,600 ${\mu}{\Omega}cm$ were grown on c-$Al_2O_3$ (0001) substrate. $ZnSnO_3$ (ZTO) thin films with different thicknesses were directly grown on LSCO/c-$Al_2O_3$ (0001) substrates at a substrate temperature that ranged from 550 to $750^{\circ}C$ using Pulsed Laser Deposition (PLD). The secondary phase $Zn_2SnO_4$ occurred during the growth of ZTO films and it became more significant with further increasing substrate temperature. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization and coercive field of 0.05 ${\mu}C/cm^2$ and 48 kV/cm, respectively, were obtained in the ZTO film grown at $700^{\circ}C$ in 200 mTorr.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.301-307
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• 2014

We have fabricated $SnO_2$/Zn core-shell nanowires by employing a sputtering technique with a Zn target. Scanning electron microscopy indicated that the surface of the nanowires became rougher by the coating. X-ray diffraction of the coated nanowires exhibited the hexagonal Zn diffraction peaks. TEM image of coated structures showed that shell layer was mainly comprised of hexagonal Zn phase. EDX spectra suggested that the shell layer consisted of Zn elements. The photoluminescence spectrum of the coated nanowires in conjunction with Gaussian fitting analysis revealed that the emission was disconvoluted with three Gaussian functions, which are centered at 2.1 eV in the yellow region, 2.4 eV in the green region, and 3.3 eV in the ultraviolet region. We speculated the possible mechanisms of these emission peaks.

• 한국세라믹학회지
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• 제55권4호
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• pp.368-375
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• 2018

This study deals with the color formation of ceramic pigment in the $TiO_2$-SnO-ZnO system. We designed compounds to control the color formation depending on the composition using the Design of Experiment. The color coordinate values of synthesized pigments, $L^*a^*b^*$ were measured and statistically analyzed color for changing elements depending on its composition. The relationship between the major crystalline phases and chromaticity was examined using XRD, and the oxidation states of each element were analyzed by XPS. The synthesized pigments based on the compound design exhibited various color changes ranging from yellow-orange to green-blue and brown. The statistical analysis on the spectrophotometer results shows that $a^*$ and $b^*$ values decreased with $TiO_2$ content, and increased with SnO content. Yellow-orange color was detected with the main peak of SnO, and the green-blue color developed with the main peak of $Zn_2TiO_4$. The $a^*$ and $b^*$ values increased with increased SnO peak intensity, and decreased with increased $Zn_2TiO_4$ peak intensity. The results revealed that pigment color formation was influenced by changes in the main crystalline phases and crystalline intensity. However, XPS analysis of the oxidation states of each element showed little correlation with the pigment chromaticity result.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• 전기전자학회논문지
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• 제13권4호
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• pp.37-42
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• 2009

본 연구에서는 졸겔법으로 ZnO, 수열합성법으로 $SnO_2$ 나노분말을 제조하고 이들 나노분말에 Pd, Ru 등의 촉매를 첨가하였다. MEMS 기술로 제작된 히터 및 전극 구조 위에 나노 감지 분말을 도포하여 CO and $NO_2$ 가스 센서를 제작하였다. 0.1 wt% Pd 도핑된 $SnO_2$ 가스센서와 Ru 도핑된 ZnO 가스 센서는 각각 CO 30 ppm, $NO_2$ 1 ppm의 낮은 농도에서도 높은 감지 특성을 보였다.

• 한국세라믹학회지
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• 제49권6호
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• pp.663-668
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• 2012

In order to reduce the indium contents in transparent conducting oxide(TCO) thin films of $In_{1.6{\sim}1.8}Zn_{0.2}Sn_{0.2{\sim}0.4}O_3$ (IZTO), $In_{1.6}Zn_{0.2}Sn_{0.2}O_{3-{\delta}}$(IZTO) was prepared by replacing indium with Zn and Sn. The TCO films were deposited via RF-magnetron sputtering of the IZTO target at various deposition temperatures and its film characteristics were investigated. When deposited in an Ar atmosphere at $400^{\circ}C$, the electrical resistivity of the film decreased to $6.34{\times}10^{-4}{\Omega}{\cdot}cm$ and the optical transmittance was 80%. As the deposition temperature increased, the crystallinity of the IZTO film was enhanced. As a result, the electrical conductivity and transmittance properties were improved. This demonstrates the possibility of replacing ITO TCO film with IZTO.