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http://dx.doi.org/10.4191/kcers.2012.49.6.663

Effect of the Deposition Temperature on the Transmittance & Electrical Conductivity of In1.6Zn0.2Sn0.2O3-δ Thin Films Prepared by RF-magnetron Sputtering  

Seo, Han (Electronic Materials Laboratory, Korea Institute of Ceramic Engineering & Technology)
Ji, Mi-Jung (Electronic Materials Laboratory, Korea Institute of Ceramic Engineering & Technology)
An, Yong-Tea (Electronic Materials Laboratory, Korea Institute of Ceramic Engineering & Technology)
Ju, Byeong-Kwon (Display and Nanosystem Laboratory, College of Engineering, Korea University)
Choi, Byung-Hyun (Electronic Materials Laboratory, Korea Institute of Ceramic Engineering & Technology)
Publication Information
Journal of the Korean Ceramic Society / v.49, no.6, 2012 , pp. 663-668 More about this Journal
Abstract
In order to reduce the indium contents in transparent conducting oxide(TCO) thin films of $In_{1.6{\sim}1.8}Zn_{0.2}Sn_{0.2{\sim}0.4}O_3$ (IZTO), $In_{1.6}Zn_{0.2}Sn_{0.2}O_{3-{\delta}}$(IZTO) was prepared by replacing indium with Zn and Sn. The TCO films were deposited via RF-magnetron sputtering of the IZTO target at various deposition temperatures and its film characteristics were investigated. When deposited in an Ar atmosphere at $400^{\circ}C$, the electrical resistivity of the film decreased to $6.34{\times}10^{-4}{\Omega}{\cdot}cm$ and the optical transmittance was 80%. As the deposition temperature increased, the crystallinity of the IZTO film was enhanced. As a result, the electrical conductivity and transmittance properties were improved. This demonstrates the possibility of replacing ITO TCO film with IZTO.
Keywords
TCOs; Thin films; Indium; $In_{1.6}Zn_{0.2}Sn_{0.2}O_{3-{\delta}}$; Deposition temperature;
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