• Journal of Magnetics
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• v.8 no.4
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• pp.138-141
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• 2003

$Ni_{0.65}Zn_{0.35}Fe_2O_4$thin films were prepared by using a sol-gel method. Their crystallographic, dielectric and magnetic properties were investigated as a function of Cu contents by means of an X-ray diffractometer (XRD), X-ray reflectivity, LCZ meter (NF2232), a vibrating sample magnetometer (VSM), and an atomic force microscope (AFM). From typical C-V measurements for $Ni_{0.65}Zn_{0.35}Fe_2O_4$ thin films on p-type silicon substrate, the surface charge density was calculated as 1.4 ${\mu}$C/$m^2$. The dielectric constant evaluated from the capacitance at the accumulation state was 28. The high $H_{c}$ and low $M_{sat}$ at x=0.0 and 0.1 were due to the growth of the ${\alpha}$-$Fe_2O_3$ phase having antiferromagnetic properties. The rapidly decreased $H_{c}$ and increased $M_{sat}$ at x=0.2 and 0.3 can be explained that the ${\alpha}$-$Fe_2O_3$ phases have completely disappeared at x=0.3 and so, non-magnetic defects are minimized. The $M_{sat}$ was slightly decreased and the $H_{c}$ was increased above at x=0.3 because the increase of grain boundary due to smaller grain size acts as defects during magnetization process.

• 한국전기화학회:학술대회논문집
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• 2004.06a
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• pp.293-296
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• 2004

고용량 $LiNi_{1-y}M_yO_2$(M=Al, Zn and Ti, y=0.000, 0.005, 0.010, 0.025, 0.050 and 0.100) 양극재료를 합성하기 위하여 연소법을 사용하였다. 합성한 시료들을 X-선회절 분석, 미세구조관찰, 전자침미세분석(EPMA)을 하였다. battery 충${\cdot}$방전기를 사용하여 리튬의 삽입${\cdot}$추출 반응으로 인하여 나타나는 충${\cdot}$방전 곡선의 변화를 조사하였고, 합성한 각 시편에 대해 충${\cdot}$방전 싸이클 수에 따른 방전용량의 변화를 조사하였다. XRD pattern 분석결과 모든 조성에서 $R\bar{3}m$ 구조를 보여주었다. Ni 자리에 Al, Zn, Ti를 치환한 결과 방전용량은 감소하였으나 M=Al 시료는 싸이클 특성이 증가하였다.

• Journal of the Korean Chemical Society
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• v.30 no.6
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• pp.526-531
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• 1986

The stability constants of 1,15-diaza-3,4:12,13-dibenzo-5,8,11-trioxacycloheptadecane (NenOdien H$_4$, L) with transition metal ions such as $Co^{2+},\;Ni^{2+},\;Cu^{2+},\;and\;Zn^{2+}$ have been determined by potentiometry in 95% methanol solution at 25$^{\circ}$C. The complex formation of the NenOdien $_4$ with the transition metal ions depends on the basicity of the donor atoms. The order of complex stability was Co(II) < Ni(II) < Cu(II) > Zn(II). The geometries of the complexes in solid state were discussed by visible-near infrared and infrared spectrophotometry, elemental analysis and electro-conductivity. The results suggest that the geometries of the solid complexes are octahedral for $[CoL_2(OH_2)Cl]Cl{\cdot}2H_2O$, $[NiL_2(OH_2)Cl]Cl{\cdot}2H_2O$, and $[ZnLCl_2]{\cdot}\frac{1}{2}H_2O$ and square pyramidal for [CuLCl]Cl, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.138-141
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• 2004

[ $MnO_2$ ]가 첨가된 $0.9Pb(Zr_{0.5}Ti_{0.5})O_3-0.2Pb[(Zn_{0.8}Ni_{0.2})_{1/3}Nb_{2/3}]O_3$(0.8PZT-0.2PZNN) 세라믹스는 그 압전특성과 유전특성이 뛰어나지만 $1000^{\circ}C$ 이하의 낮은 소결 온도에서는 소결되지 않는다. $1000^{\circ}C$이하의 낮은 소결온도에서 소결하기 위해 CuO를 첨가한 결과, 소결온도 $920^{\circ}C$에서 소결성은 우수하였으나 그 압전 특성의 저하가 두드러졌다. 이는 XRD에서 확인한 결과에 따르면 CuO의 첨가가 우수한 MPB 조성으로 판명된 $MnO_2$ 가 첨가된 0.8PZT-0.2PZNN 세라믹스의 결정구조를 Rhombohedral 구조로 바꾸기 때문인 것으로 보였으며 이러한 문제는 PZNN의 비율을 조절하여 0.875PZT-0.125PZNN 세라믹스를 선택함으로 인해 해결할 수 있었다. 그러나 여전히 낮은 $Q_m$값을 높이기 위해서 $Al_2O_3$를 첨가하였고 그 결과 시편의 tetragonality 감소와 $Q_m$값의 증가를 확인할 수 있었으나 그 첨가량이 0.2wt% 이상일 경우에는 밀도의 감소로 인한 압전특성의 저하가 나타났다. 밀도의 향상을 위해 Zn and Ni excess 조성을 선택하였고 그 결과 0.5wt% $MnO_2$와 0.2wt% CuO 그리고 0.3wt% $Al_2O_3$를 첨가한 0.875PZT-0.125PZNN 세라믹스(Zn and Ni excess 조성)를 $920^{\circ}C$에서 소결한 경우 $k_p=0.581,\;Q_m=809,\;d_{33}=345\;pC/N\;and\;{\varepsilon}_{33}/{\varepsilon}_0=1345$의 빼어난 압전 및 유전특성과 $330^{\circ}C$의 높은 $T_c$를 보였고 그 조성의 vibration velocity는 약4.5 m/s로 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.331-334
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• 2001

In this study, the magnetic properties for Ni-Zn ferrite were investigated as the function of $Co_3$ $O_4$ additive contents which was predicted to improve the resonance frequency. Toroid specimens with the composition of N $i_{0.8-x}$Z $n_{0.2+x}$F $e_2$ $O_4$(x = 0, 0.05, 0.1, 0.15) ferrites were preparation by conventional ceramic processing technique. The maximum resonance frequency of 19.905 MHz and the permeability of 90.88 in 10 MHz were attained to the N $i_{0.8}$Z $n_{0.2}$F $e_2$ $O_4$with $Co_3$ $O_4$0.3 wt%. Both of the permeability in 10 MHz and the resonance increased to 107.11 and 19.005 MHz respectively for the N $i_{0.8}$Z $n_{0.2}$F $e_2$ $O_4$with $Co_3$ $O_4$wt% than the N $i_{0.8}$Z $n_{0.2}$F $e_2$ $O_4$/ with the free $Co_3$ $O_4$composition.composition.

• Journal of the Korean Magnetics Society
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• v.17 no.6
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• pp.238-241
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• 2007

Ni-Cu-Zn ferrites were prepared by the co-precipitation. Physical properties and Microwave absorbing properties were investigated in Ni-Cu-Zn ferrite for the aim of microwave absorbers. From the analysis of X-ray diffraction patterns, we can see that all the particles have only a single phase spinel structure. The loss factor was maximum at sintering temperature $1100^{\circ}C$. The initial permeability of sintered ferrite obtained was an average of 50. We found that the $(Ni_{0.7}Cu_{0.2}Zn_{0.1}O)_{1.02}(Fe_2O_3)_{0.98}$ can be used in ferrite rubber composite microwave absorber when sintering temperature at $1100^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.390.2-390.2
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• 2016

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

• Journal of Magnetics
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• v.20 no.3
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• pp.246-251
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• 2015

This study was aimed to study the effect of Zn content on the hyperfine parameters and the structural variation of $Ni_{1-x}Zn_xFe_2O_4$ for x = 0, 0.2, 0.4, 0.6, and 0.8. To achieve this, a sol-gel route was used for the preparation of samples and the obtained ferrites were investigated by X-ray diffraction, scanning electron microscopy, and $M{\ddot{o}}ssbauer$ spectroscopy. The formation of spinel phase without any impurity peak was identified by X-ray diffraction of all the samples. Moreover, the estimated crystallite size by X-ray line broadening indicates a decrease with increasing Zn content. This result was in agreement with the scanning electron microscopy result, indicating the reduction in grain growth with further zinc substitution. The room-temperature $M{\ddot{o}}ssbauer$ spectra show that the hyperfine fields at both the A and B sites decreased with increasing Zn content; however, the rate of reduction is not the same for different sites. Moreover, the best fit parameter showed that the quadrupole splitting values of B site increased from the pure nickel ferrite to the sample with x = 0.8.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.430-436
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• 2000

In this paper, we have studied the effect of constituent ratio NiO, CuO and doped with B-Bi-Zn on proper-ties(microstructure, density, shrinkage, permeability as a function of frequency, etc.) of hexagonal-ferrite for high fre- quency chip-inductor material about several GHz. The permeability were analyzed by impedance analyzer(100 kHz∼ 40 MHz) and network analyzed(30 MHz∼3 GHz). As a result of the characteristics. the B-Bi-Zn glass ceramic was used to lower the sintering temperature for additive as function of frequency from 100kHz to 1.8 GHz showed con-stant tends. The maximum imaginary value of complex permeability was observed near the resonance frequency of 2 GHz.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.1-6
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• 2005

In this study we investigate the electronic structure and magnetism of transition metal (TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag ) deped ZnO($TM_{0.25}Zn_{0.75}O$), which are expected to have Curie temperature. Full-potential Linearized Augmented Plane Wave(FLAPW) metod is adopted with exchange-correlation potential expressed as general gradient approximation(GGA). The calculated magnetic moments of ($TM_{0.25}Zn_{0.75}O$) are 0.83, 3.03, 4.03, 3.48, 2.47, 1.56, 0.43, 0.75, 0.01 ${\mu}_B$ for TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag, respectively. The nearest neighbor O atom to the transition metal is calculated to have a significant magnetic moment of about 0.1${\mu}_B$, ?? 새 strong hybridization between O-p and TM-d bands. As the results, the systems may have larger magnetic moments in total, compared to the corresponding isolated atoms. The 3d TM doped systems exhibit the half-metallic character except Co, wheres the 4d TM doped systems behave like normal metals and low spin polarization at the Fermi levels.