• Title/Summary/Keyword: $ZnCo_2O_4$

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Defects and Electrical Properties of ZnO-Bi2O3-Mn3O4-Co3O4 Varistor (ZnO-Bi2O3-Mn3O4-Co3O4 바리스터의 결함과 전기적 특성)

  • Hong, Youn-Woo;Lee, Young-Jin;Kim, Sei-Ki;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.12
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    • pp.961-968
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    • 2012
  • In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).

Sintering and Electrical Properties According to Sb/Bi Ratio(II) : ZnO-Bi2O3-Sb2O3-Co3O4-Cr2O3 Varistor (Sb/Bi비에 따른 5원계 바리스터의 소결거동 및 전기적 특성(II) : ZnO-Bi2O3-Sb2O3-Co3O4-Cr2O3)

  • Hong, Youn-Woo;Lee, Young-Jin;Kim, Sei-Ki;Kim, Jin-Ho
    • Korean Journal of Materials Research
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    • v.22 no.12
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    • pp.682-688
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    • 2012
  • In this study we aimed to examine the co-doping effects of 1/6 mol% $Co_3O_4$ and 1/4 mol% $Cr_2O_3$ (Co:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and the grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Co,Cr-doped ZBS, ZBS(CoCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ were formed in all systems. Pyrochlore was decomposed and promoted densification at lower temperature on heating in Sb/Bi = 1.0 by Cr rather than Co. A more homogeneous microstructure was obtained in all systems affected by ${\alpha}$-spinel. In ZBS(CoCr), the varistor characteristics were improved (non-linear coefficient, ${\alpha}$ = 20~63), and seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.20 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy, the grain boundaries were found to be composed of an electrically single barrier (0.94~1.1 eV) that is, however, somewhat sensitive to ambient oxygen with temperature. The phase development, densification, and microstructure were controlled by Cr rather than by Co but the electrical and grain boundary properties were controlled by Co rather than by Cr.

Luminescence Properties of Zn2SiO4:Mn, M(M=Cr, Ti) Green Phosphors Prepared by Sol-gel Method (졸-겔법으로 제조한 Zn2SiO4:Mn, M(M=Cr, Ti) 녹색 형광체의 발광특성)

  • 안중인;한정화;박희동
    • Journal of the Korean Ceramic Society
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    • v.40 no.7
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    • pp.637-643
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    • 2003
  • In order to improve the photoluminescent properties and crystallinity, Zn$_2$SiO$_4$:Mn, M(M=Cr, Ti) phosphors were synthesized by the sol-gel method. The willemite single phase was obtained at 110$0^{\circ}C$, which is lower temperature than that of the conventional solid-state reaction (130$0^{\circ}C$). The characteristics of fired samples were obtained by a 147 nm excitation source under VUV (Vacuum Ultraviolet). To investigation the effect of co-dopant, the content of Mn and the ratio of $H_2O$ to TEOS was fixed as 2 ㏖% and 36. 1, respectively. The highest emission intensity was obtained when the concentration of Cr and Ti was 0.1 ㏖% relative to Zn$_2$SiO$_4$:Mn. While the emission intensity decrease continuously the decay time improved as increased the Cr concentration. In the case of Ti added samples, however, the emission intensity increase up to 2 ㏖% concentration.

Photoluminescence Properties of $Zn_{2-x-y}SiO_4:Mn_x,\;M_y$ Phosphors ($Zn_{2-x-y}SiO_4:Mn_x,\;M_y$계 형광체의 발광특성)

  • Cho, Bong Hyun;Sohn, Kee Sun;Park, Hee Dong;Chang, Hyun Ju;Hwang, Taek Sung
    • Journal of the Korean Chemical Society
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    • v.43 no.2
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    • pp.206-212
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    • 1999
  • The main objective of the present investigation is to improve the photoluminescent performance of existing $Zn_2SiO_4:Mn$ phosphors by introducing a new co-dopant. The co-doping effect of Mg and/or Cr upon emission intensity and decay time was studied in the present investigation. The co-dopants incorporated into the $Zn_2SiO_4:Mn$ phosphors are believed to alter the internal energy state so that the change in emission intensity and decay time can be expected. Both Mg and Cr ions have a favourable influence on photoluminescence prpperties, for example, the Mg ion enhances the intensity of manganese green emission and the Cr ion shortens the decay time. The enhancement in emission intensity of $Zn_2SiO_4:Mn,\;Mg$ phosphors was interpreted by taking into account the result from the DV-X${\alpha}$ embedded cluster calculation. On the other hand, the energy transfer between Mn and Cr ions was found to be responsible for the shortening of decay time in$Zn_2SiO_4:Mn,\;Cr$ phosphors.

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Effect of Sintering Temperature and Sb/Bi Ratio on Microstructure and Grain Boundary Properties of ZnO-Bi2O3-Sb2O3-Co3O4 Varistor (소결온도와 Sb/Bi 비가 ZnO-Bi2O3-Sb2O3-Co3O4 바리스터의 미세구조와 입계 특성에 미치는 영향)

  • Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.12
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    • pp.969-976
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    • 2011
  • In this study we aims to evaluate the effects of 1/3 mol% $Co_3O_4$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0, and 0.5) system (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. In addition of $Co_3O_4$ in $ZnO-Bi_2O_3-Sb_2O_3$ (ZBSCo), the phase development, density, and microstructure were controlled by Sb/Bi ratio. Pyrochlore on cooling was reproduced in all systems. The more homogeneous microstructure was obtained in ZBSCo (Sb/Bi=1.0) system. In ZBSCo, the varistor characteristics were improved drastically (non-linear coefficient ${\alpha}$=23~50) compared to ZBS. Doping of $Co_3O_4$ to ZBS seemed to form $V^{\cdot}_o$(0.33 eV) as dominant defect. From IS & MS, especially the grain boundary of Sb/Bi=0.5 system is composed of electrically single barrier (0.93 eV) and somewhat sensitive to ambient oxygen with temperature.

The Changes of CO Gas Sensing Properties of ZnO and $SnO_2$ with Addition $TiO_2$ ($TiO_2$첨가에 의한 ZnO와 $SnO_2$의 일산화탄소 감응특성 변화)

  • Kim, Tae-Won;Choi, U-Sung;Jun, Seon-Taek
    • Korean Journal of Materials Research
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    • v.8 no.4
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    • pp.312-316
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    • 1998
  • ZnO- TiO$_2$, and Sn0$_2$ - Ti0$_2$ ceramic composites doped with TiO$_2$ were prepared and their electrical and 1000ppm CO gas sensing properties were investigated. The phases of samples were analyzed by XRD, and the microsturctures of the fractured surface of samples were observed by SEM. A carbon monoxide gas sensitivity was de¬fined as the ratio of the resistance in dry air atmosphere(R$drt air$) to the resistance in 1000ppm CO gas atmosphere(R$_co$) The CO gas sensitivity of Smol% Ti0$_2$-added ZnO decreased about 1.7 times compared to that of pure ZnO. On the other hand, the maximum CO gas sensitivity of Ti0$_2$-added SnO$_2$ increased about 2.5 times compared to that of pure SnO$_2$. Therefore, the CO gas sensitivies of SnO$_2$-TiO$_2$ composite were better than those of ZnO- Ti0$_2$ and the temper¬ature range showing the maximum sensitivity for Sn0$_2$-TiO$_2$ composite was lower than that for ZnO- Ti0$_2$.

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The effects of $Co_3O_4$ additives on the magnetic properties of Ni-Zn ferrites ($Co_3O_4$ 첨가에 의한 Ni-Zn ferrite의 자기적 특성 변화)

  • Lee, S.H.;Oh, Y.W.;Kim, D.H.;Kim, H.S.;Min, B.K.
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1460-1462
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    • 2001
  • 초고속 전력선 통신을 위한 고주파수 대역에서 안정적인 자기적 특성을 갖는 Ni-Zn ferrite를 개발하기 위해서 투자율은 낮지만 주파수 특성이 우수한 $Ni_{0.8}Zn_{0.2}Fe_2O_4$를 기본조성으로 입자를 성장시키는 $Bi_2O_3$를 0.7, 비저항을 증가 시키는 CaO를 0.3, 그리고 입자를 균일하게 하는 $V_2O_5$를 0.1 wt% 첨가하여 미세구조를 제어하고, 다시 고주파 특성을 향상시킬 것으로 기대되는 $Co_3O_4$를 0, 0.3, 0.5, 0.7 wt%로 변화시켜 자기적 특성을 조사하였다. $Co_3O_4$가 밀도 및 미세구조에는 영향을 미치지 않았으나 0.3, 0.5 wt% 첨가시 첨가하지 않은 조성보다 투자율은 감소하였으나 사용 한계 주파수로 여겨지는 공명주파수가 각각 19.905, 19.205 MHz로 크게 증가하였다. 그리고 전체 전력 손실도 $Co_3O_4$를 첨가했을 때 감소하였으나 첨가량에는 큰 변화가 없었다. 와전류 손실이 전체 전력손실에 지배적인 영향을 미치고 있다.

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Electrical Properties of ZnO-Bi2O3-Co3O4 Varistor (ZnO-Bi2O3-Co3O4 바리스터의 전기적 특성)

  • Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.11
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    • pp.882-889
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    • 2011
  • In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

Codoped ZnO films by a co-spray deposition technique for photovoltaic applications

  • Zhou, Bin;Han, Xiaofei;Tao, Meng
    • Advances in Energy Research
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    • v.2 no.2
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    • pp.97-104
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    • 2014
  • A co-spray deposition technique has been developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e., the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with F and Al have been successfully synthesized, in which F is incompatible with Al. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, $NH_4F$. The second solution contained the Zn and Al precursors, $Zn(O_2CCH_3)_2$ and $AlCl_3$. The deposition was carried out at $500^{\circ}C$ on soda-lime glass in air. A minimum sheet resistance, $55.4{\Omega}/{\square}$, was obtained for Al and F codoped ZnO films after vacuum annealing at $400^{\circ}C$, which was lower than singly-doped ZnO with either Al or F. The transmittance for the codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties for photovoltaic applications.

The CO Gas Sensing Properties of ZnO-WO$_3$Composite Ceramics (ZnO-WO$_3$복합체의 일산화탄소 가스 감응특성)

  • 김태원;정승우;최우성;박춘배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.401-404
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    • 1997
  • We prepared 0~20mo1% WO$_3$added ZnO composite ceramics in order to promote a CO gas sensitivity. Using SE,. we observed the microstructure of sample. The resistances of sample were measured by High Voltage Measure/source Unit in the temperature range of +5V~-5V. The measured 1000ppm CO sensitivities of pure ZnO were about 1~4.3, and the measured 1000ppm CO sensitivities of ZnO-WO$_3$composite ceramics were about 1~8.2. Therefore, the 1000ppm CO sensitivities of ZnO-WO$_3$composite ceramics were about 2 times larger than that of pure ZnO.

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