• Title/Summary/Keyword: $Zn^{+2}$

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The effect of Zn2TiO4 on willemite crystalline glaze (Zn2TiO4가 아연결정유약에 미치는 효과)

  • Lee, Chi-Youn;Lee, Hyun-Soo;Shin, Kyung-Hyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.2
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    • pp.70-76
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    • 2014
  • $Zn_2TiO_4$, using an anatase form of $TiO_2$ on zinc crystalline glaze, was shown as effective nuclear agent. Thus the effects on glaze were studied with synthesized $Zn_2TiO_4$ at low temperature. First, the chromophore elements were employed in synthesized $Zn_2TiO_4$ then add them in the zinc crystalline glaze. Crystal creation and development of color by $Zn_2TiO_4$ addition on the zinc crystalline glaze were more effective. Addition of $Zn_2TiO_4$, which is developed in low range temperature, is effected as zinc crystalline nuclear in the willemite glaze. When 5 wt% of synthesized $Zn_2TiO_4$ was added to the willemite glaze, nuclear creation increases and steadily retains. Therefore addition of respectively doped $Zn_2TiO_4$ with CoO, NiO, and CuO would increase doped effects in the glaze, various color willemite crystal were obtained.

A Study on the Photo-Conductive Characteristics of (p)ZnTe/(n)Si Solar Cell and (n)CdS-(p)ZnTe/(n)Si Poly-Junction Thin Film ((p)ZnTe/(n)Si 태양전지와 (n)CdS-(p)ZnTe/(n)Si 복접합 박막의 광도전 특성에 관한 연구)

  • Jhoun, Choon-Saing;Kim, Wan-Tae;Huh, Chang-Su
    • Solar Energy
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    • v.11 no.3
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    • pp.74-83
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    • 1991
  • In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

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The Photovoltaic Effect of Iodine-Doped Metal Free Phthalocyanine/ZnO System (Ⅰ) (요오드가 도핑된 무금속 프탈로시아닌/산화아연계의 광기전력 효과(Ⅰ))

  • Heur, Soun-Ok;Kim, Young-Soon;Park, Yoon-Chang
    • Journal of the Korean Chemical Society
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    • v.39 no.3
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    • pp.163-175
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    • 1995
  • Metal free phthalocyanine($H_2Pc$) partially doped with iodine, $H_2Pc(I)x$, has been made to improve photosensitizing efficiency of ZnO/$H_2Pc$. The content of iodine dopant level(x) for $H_2Pc(I)x$ upon $H_2Pc$ polymorphs was characterized as ${\chi}-H_2Pc(I)_{0.92}$ and ${\beta}-H_2Pc(I)_{0.96}$ by elemental analysis. Characterization of iodine-oxidized $H_2Pc$ were investigated by TGA (thermogravimetric analysis), UV-Vis, FT-IR, Raman and ESR (electron spin resonance) spectrum, and the adsorption properties of $H_2Pc(I)x$ on ZnO were characterized by means of Raman and ESR studies. TGA for $H_2Pc(I)x$ showed a complete loss of iodine at approximately 265$^{\circ}C$ and the Raman spectrum of $H_2Pc(I)x$ and ZnO/$H_2Pc(I)x$ at 514.5 nm showed characteristic $I_3^-$ patterns in the frequency region 90∼550 $cm^{-1}$. ZnO/$H_2Pc(I)x$ exhibited a very intense and narrow ESR signal at $g=2.0025{\pm}0.0005$ compared to $H_2Pc$/ZnO. Iodine doped ZnO/$H_2Pc(I)x$ showed a better photosensitivity compared to iodine undoped ZnO/$H_2Pc$. That is, the surface photovoltage of ${\chi}-H_2Pc(I)_{0.92}$/ZnO was approximately 31 times greater than that of ZnO/${\chi}-H_2Pc$ and ZnO/${\beta}-H_2Pc(I)_{0.96}$ was 5 times more efficient than ZnO/${\beta}-H_2Pc$ at 670 nm. And the dependence of photosensitizing effect upon $H_2Pc$ polymorphs was exhibited that the surface photovoltage of ZnO/${\chi}-H_2Pc(I)_{0.92}$ was approximately 5 times greater than ZnO/${\beta}-H_2Pc(I)_{0.96}$ at 670 nm. Therefore Iodine doping of H_2Pc$ resulted in increase in photoconductivity of $H_2Pc$ and photovoltaic effect of ZnO/$H_2Pc$ in the visible region.

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Annealing Effect of Phosphorus-Doped ZnO Nanorods Synthesized by Hydrothermal Method (Phosphorus-Doped ZnO 나노로드의 열처리 효과)

  • Hwang, Sung-Hwan;Moon, Kyeong-Ju;Lee, Tae Il;Myoung, Jae Min
    • Korean Journal of Materials Research
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    • v.23 no.5
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    • pp.255-259
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    • 2013
  • An effect of thermal annealing on activating phosphorus (P) atoms in ZnO nanorods (NR) grown using a hydrothermal process was investigated. $NH_4H_2PO_4$ used as a dopant source reacted with $Zn^{2+}$ ions and $Zn_3(PO_4)_2$ sediment was produced in the solution. The fact that most of the input P elements are concentrated in the $Zn_3(PO_4)_2$ sediment was confirmed using an energy dispersive spectrometer (EDS). After the hydrothermal process, ZnO NRs were synthesized and their PL peaks were exhibited at 405 and 500 nm because P atoms diffused to the ZnO crystal from the $Zn_3(PO_4)_2$ particles. The solubility of the $Zn_3(PO_4)_2$ initially formed sediment varied with the concentration of $NH_4OH$. Before annealing, both the structural and the optical properties of the P-doped ZnO NR were changed by the variation of P doping concentration, which affected the ZnO lattice parameters. At low doping concentration of phosphorus in ZnO crystal, it was determined that a phosphorus atom substituted for a Zn site and interacted with two $V_{Zn}$, resulting in a $P_{Zn}-2V_{Zn}$ complex, which is responsible for p-type conduction. After annealing, a shift of the PL peak was found to have occurred due to the unstable P doping state at high concentration of P, whereas at low concentration there was little shift of PL peak due to the stable P doping state.

Synthesis and thermal decomposition of $Zn[BH_4]_2$ ($Zn[BH_4]_2$ 분말의 합성과 열분해 특성)

  • Jeon, Eun;Cho, Young-Whan
    • Journal of Hydrogen and New Energy
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    • v.16 no.3
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    • pp.262-268
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    • 2005
  • [ $Zn(BH_4)_2$ ](8.4 wt% theoretical hydrogen storage capacity powders have been successfully synthesized by mechanochemical reaction from mixtures of $ZnCl_2$ and $NaBH_4$ powders in a 1:2 molar ratio in different times. $$ZnCl_2+2NaBH_4{\rightarrow}Zn(BH_4)_2+2NaCl$$ (1) $Zn(BH_4)_2$ powders were characterized by X-ray diffractometry(XRD), and Furier Transform Infrared spectrometry(FT-IR). The thermal stabilities of $Zn(BH_4)_2$ powders were studied by Differential scanning calorimetry(DSC), Thermogravimetry analysis(TGA), and Mass spectrometry(MS). $Zn(BH_4)_2$ can be tested for hydrogen evolution without further purification. The reaction to yield hydrogen is irreversible, the other products being compounds of Zn, and borane. $Zn(BH_4)_2$ thermally decomposes to release borane and hydrogen gas between about 85 and 150$^{\circ}C$.

Effect of In2O3 Doping on the Properties of ZnO Films as a Transparent Conducting Oxide (투명전도성 ZnO 박막의 특성에 미치는 In2O3 첨가에 따른 영향)

  • Lee, Choon-Ho;Kim, Sun-Il
    • Journal of the Korean Ceramic Society
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    • v.41 no.1
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    • pp.57-61
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    • 2004
  • Zinc Oxide (ZnO) have the crystal structure of wurtzite which is semiconducting oxide with band gap energy of 3.3eV. $In_2O_3$-doped ZnO films were fabricated by electron beam evaporation at $400^{\circ}C$ and their characteristics were investigated. The content of $In_2O_3$ in ZnO films had a marked effect on the electrical properties of the films. As $In_2O_3$ content decreased. $In_2O_3$-doped ZnO films was converted amorphous into crystallized films and showed a better characteristics generally as a transparent conducting oxide. As $In_2O_3$-doped ZnO films were prepared by $In_2O_3$-doped ZnO pellet with 0.2at% of $In_2O_3$ content, the value of resistivity was about $6.0 {\times} 10^{-3} {\Omega}cm$. The transmittance was higher than 85% throughout the visible range.

Preparation of ZnO nanorods by hydrothermal method and their $NO_2$ sensing characteristics (수열합성법을 이용한 ZnO 나노로드의 제조 및 이산화질소 감응 특성)

  • Cho, Pyeong-Seok;Kim, Ki-Won;Lee, Jong-Heun
    • Journal of the Korean Vacuum Society
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    • v.15 no.5
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    • pp.506-511
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    • 2006
  • ZnO nanorods were prepared by the hydrothermal reaction of a solution containing $Zn(NO_3)_2{\cdot}6H_2O$, NaOH, cyclohexylamine, ethanol and water, and their $NO_2$ and CO sensing behaviors were investigated. By the control of water concentration in solution, the morphology and agglomeration of ZnO nanorods could be manipulated, which is associated with the variation of $[OH^-]$ resulted from an interaction between water and cyclohexylamine. Sea-urchin-like and well-dispersed ZnO nanorods were prepared at low and high water content, respectively. Well-dispersed ZnO nanorods showed 1.8 fold change in resistance at 1 ppm $NO_2$ while there was no significant change in resistance at 50 ppm CO. This selective detection of $NO_2$ in the presence of CO can be used in automated car ventilation systems.

Studies on Hexagonal Ferrite (III) Coprecipitation-Method Preparation of Ferroxplana ZnY $(Ba_2Zn_2Fe_{12}O_{22})$ and Its magnetic Properties (Hexagonal Ferrite에 관한 연구 (III) 공침법에 의한 Ferroxplana ZnY $(Ba_2Zn_2Fe_{12}O_{22})$의 합성과 그 자성)

  • 김태옥;신학기
    • Journal of the Korean Ceramic Society
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    • v.16 no.2
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    • pp.89-98
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    • 1979
  • In order to prepare ferroxplana ZnY $(Ba_2Zn_2Fe_{12}O_{22})$, which would be useful for GHz-band communication, the optimum coprecipitation condition of 1 $BaCl_{2-1} Zn(NO_3)_2-6FeCl_3$ in $NaOH-Na_2CO_3$ solution was investigated by use of a new apparatus invented in our laboratory. By freeze-drying and calcining the coprecitated hydroxide-carbonate, the very reactive powder was obtained, from which the synthesis process of ZnY and the other related crystals were investigated by means of X-ray diffraction. In results, it was found that the reactive powder containing ZnY as the major component can be prepared by this method, which may be used in manufacturing the various magnetic cores for the microwave communication.

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Electrical Properties of Y-type Hexagonal Ferrite (Y-type hexagonal Ferrite의 전기적 특성)

  • 박영민;최경만
    • Journal of the Korean Ceramic Society
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    • v.30 no.11
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    • pp.962-966
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    • 1993
  • Effect of Fe content on the electrical properties of Zn2Y (Ba2Zn2Fe12O22) was studied by investigating X-ray diffraction patterns, microstructure and resistivity of samples. When x(Ba2Zn2Fe12+xO$\delta$) is between +1 and -1, Zn2Y single phase was obtained and electrical resistivity was inversely proportional to Fe content. The possible defect model of Zn2Y was proposed based on the observation. When x<-1 or x>1, second phase(ZnFe2O4 for x<-1, ZnFe2O4 and Ba3Zn3Fe24O41 for x>1) were observed and the electrical resistivity was inversely proportional to the sample density. The activation energy of electrical conductivity of the stoichiometric Zn2Y was 0.49eV below 20$0^{\circ}C$ and 0.07eV above 50$0^{\circ}C$.

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