• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.274-279
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• 1997

NOx sensors using tungsten oxide films as a base material were prepared and their electrical and sensing characteristics have been investigated. The $WO_{3}$ thick films doped with $SnO_{2}$ or $TiO_{2}$ showed higher sensitivity and better sorption characteristics to NOx gas than the pure $WO_{3}$ films material in air at operating temperature of $400^{\circ}C$. By addition of noble catalysts, such as Ru or Au, to the $TiO_{2}-WO_{3}$ thick films, their sensitivity, recovery and selectivity to NOx gas were found to be more enhanced.

• Journal of Powder Materials
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• v.26 no.1
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• pp.40-44
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• 2019

Tungsten trioxide ($WO_3$) is a promising candidate as a photocatalyst because of its outstanding electrical and optical properties. In this study, we prepare $WO_3$ thin films by electrodeposition and characterize the photocatalytic degradation of methylene blue using these films. Depending on the voltage conditions (static and pulse), compact and porous $WO_3$ films are fabricated on a transparent ITO/glass substrate. The morphology and crystal structure of electrodeposited $WO_3$ thin films are investigated by scanning electron microscopy, atomic force microscopy, and X-ray diffraction. An application of static voltage during electrodeposition yields a compact layer of $WO_3$, whereas a highly porous morphology with nanoflakes is produced by a pulse voltage process. Compared to the compact film, the porous $WO_3$ thin film shows better photocatalytic activities. Furthermore, a much higher reaction rate of degradation of methylene blue can be achieved after post-annealing of $WO_3$ thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.120-123
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• 1993

This paper describes the deposition and characteristics of electrochromic tungsten oxide thin films for electrochromic smart windows. Tungsten Oxide thin films(WO$_3$) are deposited by thermal evaporation techniques. By varying deposition parameters, WO$_3$ thin films exhibit different optical properties. The electrochromic devices are consist of ITO glass/ WO$_3$ thin films/ LiClO$_4$-propylene carbonate electrolyte/ counter electrode. The electrochromic properties of tungsten oxide thin films with different deposition condition ale investigated.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.632-637
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• 1993

The optical properties and electrochromism of amorphous $WO_3$ thin films were studied. $WO_3$ thin films with thickness of 3000$\AA$~6000$\AA$ were deposited by vacuum evaporat.ion. All these films were transparent and found to be amorphous in structure by X-ray diffraction analysis and the visible wave length refractive indices were found to be between 1.9 and 2.1 and the optical energey gap to be 3.25 eV. Electrochromic devices were made consisting of IT0 transparent electrode, $WO_3$ thin films, $LiCIO_4$- propylene carbonate and Pt counter electrode. In terms of their operation, the amorphous $WO_3$ films were colored blue by a double injection of electrons from the transparent electrode and lithium ions from the $LiCIO_4$-propylene carbonate organic electrolyte and made colorless by electrochemical oxidation reaction. The electrochromic properties of $WO_3$ thin films including coloration and bleaching, optical density and response time were all found to be strongly dependent on the film deposition condition, electrolyte concentration, sheet resistance of the transparent electrode and applied voltage.

• Journal of the Korean institute of surface engineering
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• v.55 no.4
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• pp.187-195
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• 2022

WO₃ thin films were synthesized by electrodeposition, and their electrochromic properties were investigated. The application of static voltage produced WO₃ films with a smooth, compact surface morphology, and the film thickness linearly increased with the application time. The thicker film showed a strong color contrast but a slow color-switching speed. High-temperature heat treatment exceeding 300 ℃ induced a phase transformation from an amorphous to a monoclinic structure and resulted in degraded electrochromic performance. Furthermore, the optimized WO₃ thin films demonstrated their potential application as electrochromic boards for writing and erasing letters using a simple modified 3D printer in a rapid, accurate process

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.582-587
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• 2023

The effects of the annealing temperature on the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films grown on quartz substrates by radio-frequency magnetron sputtering were investigated. The thin films were annealed at various annealing temperatures for 20 min in a rapid thermal annealer after growing the thin films. The experimental results showed that the annealing temperature has a significant effect on the properties of the SrWO₄:Sm³⁺ thin films. The crystal structure of the as-grown SrWO₄:Sm³⁺ thin films was transformed from amorphous to crystalline after annealing at 800℃. The preferred orientation along (112) plane and a significant increase in average grain size by 820 nm were observed with increasing the annealing temperature. The average optical transmittance in the wavelength range of 500~1,100 nm was decreased from 72.0% at 800℃ to 44.2% at an annealing temperature of 1,000℃, where the highest value in the photoluminescence intensity was obtained. In addition to the red-shift of absorption edge, a higher annealing temperature caused the optical band gap energy of the SrWO₄:Sm³⁺ thin films to fall rapidly. These results suggest that the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films can be controlled by varying annealing temperature.

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.486-490
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• 2005

Thin films of tungsten oxide and nickel oxide were deposited on $Al_2O_3/Si-substrate$ by high vacuum thermal evaporation. The properties of microstructure and crystallinity were analyzed by SEM and XRD respectively. $WO_3$ films without addition of NiO showed polycrystalline structure after annealing at $500^{\circ}C$ for SO min. There were the cracks between the polycrystalline grains and the crack width was increased with the thickness of $WO_3$ films. The cracks in the $WO_3$ films could be controlled by an optimum deposition of NiO on $WO_3$ films and either less or more than the optimum addition fails to suppress the cracks. A process mechanism to suppress the crack has been discussed.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1346-1348
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• 1998

Tungsten oxide($WO_3$) thin films were prepared by reactive magnetron sputtering in an $Ar/O_2$ atmosphere from a compressed powder $WO_3$ target and their electrochromic(EC) phenomena were investigated. PEO-$LiClO_4$-PC polymer electrolyte can easely be formed into thin films and showed high transmittance. Such electrolyte have electrochromic properties suitable for large-scale electrochromic devices. For the devices using $WO_3$ thin films of 1500, 2500, $4000{\AA}$ thickness with glass/ITO/$WO_3$/PEO-$LiClO_4$-PC/ITO/glass structure, an optical modulation of $50{\sim}60%$ were obtained at a potential range of $1{\sim}2V$. It has shown that transmittance and reflectance of light could be electrically controlled by low applied voltage.

• Korean Journal of Materials Research
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• v.28 no.7
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• pp.411-416
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• 2018

Tungsten oxide($WO_3$) films with uniform surface morphology are fabricated using a spin-coating method for applications of electrochromic(EC) devices. To improve the EC performances of the $WO_3$ films, we control the heating rate of the annealing process to 10, 5, and $1^{\circ}C/min$. Compared to the other samples, the $WO_3$ films fabricated at a heating rate of $5^{\circ}C/min$ shows superior EC performances for transmittance modulation(49.5 %), response speeds(8.3 s in a colored state and 11.2 s in a bleached state), and coloration efficiency($37.3cm^2/C$). This performance improvement is mainly related to formation of a uniform surface morphology with increased particle size without any cracks by an optimized annealing heating rate, which improves the electrical conductivity and electrochemical activity of the $WO_3$ films. Thus, the $WO_3$ films with a uniform surface morphology prepared by the optimized annealing heating rate can be used as a potential candidate for performance improvement of the EC devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.61-66
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• 2001

NiO-doped $WO_3$ thick films were prepared by a screen printing technique. The electrical property and microstructure of the films were investigated with the partial pressure of oxygen and the amount of NiO. The grain size of NiO-doped $WO_3$ was smaller than that of undoped $WO_3$, but the grain size of 0.1, 1, 10 mol% NiO-doped $WO_3$ were nearly the same. The electrical conductance of the $WO_3$ thick films decreased with the oxygen partial pressure, and increased with the amount of NiO to the limit of solid solution. The variation of the electrical conductance with temperature is not so large in the extrinsic region, but it changed rapidly in the intrinsic region. The conductance decreased with adsorption of oxygen in the intermediate range between the extrinsic and intrinsic region.