• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.311-317
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• 2003

Vanadium oxides supported on zirconia and modified with MoO₃were prepared by adding Zr(OH)₄powder into a mixed aqueous solution of ammonium metavanadate and ammonium molybdate followed by drying and calcining at high temperatures. The characterization of prepared catalysts was performed using FTIR, Raman spectroscopy and solid-state $^{51}V$ NMR. In the case of a calcination temperature of 773 K, for samples containing low loading of $V_2O_5$, below 15 wt %, vanadium oxide was in a highly dispersed state, while for samples containing high loading of $V_2O_5$, equal to or above 15 wt %, vanadium oxide was well crystallized because the $V_2O_5$ loading exceeded the formation of a monolayer on the surface of $ZrO_2$. The $ZrV_2O_7$ compound was formed through the reaction of $V_2O_5\;and\;ZrO_2$ at 873 K and the compound decomposed into $V_2O_5\;and\;ZrO_2$ at 1073 K, which were confirmed by FTIR spectroscopy and solid-state $^{51}V$ NMR. IR spectroscopic studies of ammonia adsorbed on $V_2O_5-MoO_3/ZrO_2$ showed the presence of both Lewis and Bronsted acids.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.510-515
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• 1994

Yttria-stabilized zirconia(YSZ) films were prepared onto p-type (100) silicon wafer by a plasma-enhanced metallorganic chemical vapor deposition(PE MO CVD) processing involving the application of vapor mixture of tri(2.2.6.6-tetramethyl-3, 5-heptanate) yttrium$[Y(DPM)_3]$, zirconiumtriflouracethyla cetonate$(Zr(tfacac)_4$ and oxygen gas. The x-ray diffraction(XRD) and fourier transform infrared spectra(FT1R) results showed that the deposited YSZ films had a single cubic phase. $Y_2O_3$ content of YSZ film was analyzed by PIXE(partic1e induced x-ray emission). The experimental results by PIXE revealed that 12.lmol%, 20.4mol% and 31.6mol% $Y_2O_3$ could be obtained as the $Y(DPM)_3$ bubbling temperature varied at $160^{\circ}C, 165^{\circ}C$ and $170^{\circ}C$ respectively. The increase of $Y(DPM)_3$ bubbling temperature caused shifting flat band voltage to have a negative value.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.366.1-366.1
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• 2014

The rare-earth oxides M2O3 (M=La, Pr, Gd) are good insulators due to their large band gap (3.9eV for Pr2O3, 5.6eV for Gd2O3), they have high dielectric constants (Gd2O3 K=16, La2O3 K=27, Pr2O3 K=26-30) and, compared to ZrO2 and HfO2, they have higher thermodynamic stability on silicon making them very attractive materials for high-K dielectric applications. Another attractive feature of some rare-earth oxides is their relatively close lattice match to that of silicon, offering the possibility of epitaxial growth and eliminating problems related to grain boundaries in polycrystalline films. Metal-organic chemical vapor deposition (MOCVD) has been preferred to PVD methods because of the possibility of large area deposition, good composition control and excellent conformal step coverage. Herein we report on the synthesis of rare-earth oxide complexes with designed alkoxide and aminoalkoxide ligand. These novel complexes have been characterized by means of FT-IR, elemental analysis, and thermogravimetric analysis (TGA).

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.443-448
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• 1988

Colored Cubic Zircona(CCZ) single crystals were grown by the skull melting method. The grown crystals were doped with up to 0.1wt% transition (Cu, Ni, Co, Ti, Fe, Mo, Cr, V, Mn) metal ions on ZrO2-Y2O3(9.5~10mol%) and their Optical transmission spectra(λ=300~800nm)data were obtained. Various colors were pronounced due to dopant effects in the grown Crystals.

• Economic and Environmental Geology
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• v.29 no.3
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• pp.257-267
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• 1996

One hundred of thirty volcanic rocks col1ected from the Jeju island， Jeongog， Guryongpo and other areas were analyzed for major elements and trace elements with Au by inductively coupled argon plasma and graphite furnace atomic absorptiom spectrometry. The Au content is the highest values (0.2~43.4 ppb, average; 10.34 ppb) from the Jeju island volcanic rocks and the lowest (0.5~11.0 ppb, average; 1.23 ppb) from the Guryongpo volcanic area. The content of Au tends to be higher in the Quarternary volcanic rocks than Tertiary or Cretaceous volcanic rocks. The Au content of the calc alkali volcanic rocks tends to increase from mafic to felsic volcanic rocks, but that of the alkalic volcanic rocks tends to increase from felsic to mafic volcanic rocks. The Au content of the volcanic rocks collected from the Jeju island shows the highest values in the feldspar olivine basalts. Elements or oxides which have positive or negative correlations with Au are Ag, Mo, Rb, V, Y, $K_2O$, MgO and $SiO_2$, but other elements analyzed are not shown correlations with Au. It has a tendency to show that samples from the Jeju with 5 ppb gold and more are plotted in the non-Dupal area and those with less than 5 ppb gold in the Dupal area, while those from the Jeongog with 5 ppb gold and more are plotted in the Dupal area and those with less than 5 ppb gold in the non-Dupal area, in the Ba/Nb-La/Nb, Zr/Nb-Ba/Nb diagrams. It shows that samples from the Jeju and Guryongpo with high gold content are plotted in the within-plate, while those with low gold content are plotted in the arc-related area, and those from the Jeongog are scattered in the $TiO_2-Al_2O_3$, $Zr/A1_2O_3-TiO_2/Al_2O_3$ diagrams.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.205-212
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• 2002

The growth characteristics of metal-organic chemical vapor deposition (MOCVD) $Pb(Zr_xTi_{1-x})O_3 (PZT) thin films were investigated for the application of high-density ferroelectric random access memories (FRAM) devices beyond 64Mbit density. The supply control of Pb precursor plays the most critical role in order to achieve a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, $Ir/IrO_2/PZT(100nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of $~28{\mu}C/textrm{cm}^2$ and coercive voltage of 0.8V at 2.5V. Other issues such as step coverage, compositional uniformity and low temperature deposition was discussed in viewpoint of actual device application.

• Journal of the Korean institute of surface engineering
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• v.31 no.5
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• pp.278-285
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• 1998

Alloys of Ti-15Mo-5Zr-3Al(wt%) were oxidized in air between 700 and $900^{\circ}C$. It was found that the oxidation resistance is much better than that of either commercially available pure Ti-6Al-4V(wt%) alloys. The oxide scales were primarily composed of thick Ti-ox-ides which were formed by the inward diffusion of oxygen from the atmosphere. At higher temperatures a thin $\alpha$-$Al_2O_3$ layer was formed on Ti-oxides owing to the outward diffusion of Al from the base alloys. Molybdenum, the noblest metal among the alloy components, was predominantly present behind the oxide-substrate interface. Zirconium, an oxygen active metal, was present at both the oxide layer and the substrate.

• Bulletin of the Korean Chemical Society
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• v.23 no.8
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• pp.1067-1072
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• 2002

A new polystyrene-divinylbenzene resin containing 2-(2-thiazolylazo)-5-dimethylamino-phenol (TAM) functional groups has been synthesized and its sorption behavior for nineteen metal ions, including Zr(Ⅳ),Hf(Ⅳ) and U(Ⅵ) has been investigated by batch and column methods. The chelating resin showed high sorption affinity for Zr(Ⅳ) at pH 1-5 and U(Ⅵ) at pH 4. Some parameters affecting the sorption of the metal ions have been detailed. The breakthrough and overall capacities were measured under optimized conditions. The overall capacities of Zr(Ⅳ), Th(Ⅳ) and U(Ⅵ), which showed higher than the other metal ions, were 0.90,0.84 and 0.80 mmol/g, respectively. The elution order of metal ions at pH 4 was evaluated as Zr(Ⅳ) > Th(Ⅳ) > U(Ⅵ) > Cu(Ⅱ) > Hf(Ⅳ) > W(Ⅵ) > Mo(Ⅵ) > In(Ⅲ) > Sn(Ⅳ) > Cr(Ⅲ) > V(Ⅴ) > Fe(Ⅲ). Quantitative recovery of most metal ions except Zr(Ⅳ) was achieved using 2M HNO3. Desorption and recovery of Zr(Ⅳ) was successfully performed with 2 M HClO4 and 2 M HCl.