• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.2
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• pp.327-331
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• 2009

Nano-porous $TiO_2$ powder was fabricated using Acetylene black, applied photo voltaic device based on the Dye-sensitized Solar Cells (DSCs) was investigated experimentally. $TiO_2$-powder was fabricated using Ti-isopropoxide and 2-propanol by sol-gel combustion method. For cases of variable Acetylene black, characteristic of porosity, size of particle and crystallite of obtained $TiO_2$ nano-powder was investigated. The photovoltaic efficiency of the prepared DSCs was measured using $TiO_2$ film which prepared on each different heat treatment temperature($400^{\circ}C{\sim}700^{\circ}C$) with paste of $TiO_2$ powder. The porosity and size of particle of $TiO_2$ powder made with Acetylene black 0.4g was influenced significantly effect to DSCs characteristic. Heat treatment at $500^{\circ}C$ makes the better photovoltaic efficiency which 5.02%($J_{sc}=11.79mA/cm^2$, $V_{oc}=0.73V$, ff=0.58). The sol-gel combustion method was useful to DSCs fabrication.

• Applied Chemistry for Engineering
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• v.7 no.4
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• pp.670-678
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• 1996

The characterization of catalysts for the selective catalytic reduction(SCR) was investigated to remove NOx discharge from radioactive waste incinerator. The catalyst was prepared by impregnating $V_2O_5$, $MoO_3$, and $SnO_2$ on honeycomb shaped $TiO_2$. The effects of the type of catalysts, reaction temperature, feed composition, and mole ratio of $NH_3/NO$ on the reaction characteristics were evaluated in a laboratory scale reactor. The 10% $V_2O_5/TiO_2$ catalyst showed the highest NO to $N_2$ conversion of 94.4% at $350^{\circ}C$ and the temperature range for higher conversion was broadened by adding thermally stable promoters, $MoO_3$.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.31-36
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• 1983

The photoelectrochemical conversion by polycrystalline $TiO_2$ electrodes is effected by applied voltage oxidized $TiO_2$ thickness temperature and concentration of a, P. E. C cell. Anodic current starts at -0.8V in 1N-NaOH solu-tion and photocurrent appears around 420nm frequency. And the emf of the cell drops with the rate of 58.5mV/PH.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.142-145
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• 1993

$TiO_2-V_2O_5$ thin films are fabricated by Sol-Gel method and humidity sensing properties have been investigated. As the results of humidity sensing properties of thin films fabricated as humidity sensor, it is confirmed to have good humidity sensing properties in high humidity and low frequency regions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.240-249
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• 1995

Rutile type of $TiO_{2}$ single crystal was grown by floating zone method in order to obtain the highly transparent and contamination-free single crystal. The linear refractive index of perpendicular and parallel to c-axis was measured as a function o f wavelength from 500 to 1000nm. The optical energy band gap was estimated as 2.99 eV from the absorption spectrum. The theoretical $\chi^{(3)}$} value of $TiO_{2}$ was discussed in comparison with that of $SiO_{2}$ quartz single crystal on the basis of semiempirical model. On the other hand, the second-hyperpolarizability, ${\gamma}({Ti}^{4+})$ was calculated in order to describe the effect of $Ti_{4}$ ion on the third order nonlinear optical properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.807-811
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• 2003

We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.

• Korean Journal of Mineralogy and Petrology
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• v.33 no.2
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• pp.115-127
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• 2020

The Unsang gold deposit has been one of the three largest deposits (Daeyudong and Kwangyang) in Korea. The deposit consists of Au-bearing quartz veins filling fractures along fault zones in Precambrian metasedimentary rock and Jurassic Porphyritic granite, which suggests that it might be an orogenic-type. Based on its mineral assemblages and quartz textures, quartz veins are classified into 1)galena-quartz, 2)pyrrhotite-quartz, 3)pyrite-quartz, 4)pegmatic quartz, 5)muscovite-quartz, and 6)simple quartz vein types. The pyrite-quartz vein type we studied shows the following alteration features: sericitization, chloritization, and silicification. The quartz vein contains minerals including white quartz, white mica, chlorite, pyrite, rutile, calcite, monazite, zircon, and apatite. Rutile with euhedral or medium aggregate occur at mafic part from laminated quartz vein. Two types of rutile are distinguishable in BSE image, light rutile is texturally later than dark rutile. Chemical composition of rutile has 89.69~98.71 wt.% (TiO₂), 0.25~7.04 wt.% (WO₃), 0.30~2.56 wt.% (FeO), 0.00~1.71 wt.% (Nb₂O₅), 0.17~0.35 wt.% (HfO₂), 0.00~0.30 wt.% (V₂O₃), 0.00~0.35 wt.% (Cr₂O₃) and 0.04~0.25 wt.% (Al₂O₃), and light rutile are higher WO₃, Nb₂O₅ and FeO compared to the dark rutile. It indicates that dark rutile and light rutile were formed at different stage. The substitution mechanisms of dark rutile and light rutile are suggested as followed : dark rutile [(V³⁺, Cr³⁺) + (Nb⁵⁺, Sb⁵⁺) ↔ 2Ti⁴⁺, 4Cr³⁺ (or 2W⁶⁺) ↔ 3Ti⁴⁺ (W⁶⁺ ↔ 2Cr³⁺), V⁴⁺ ↔ Ti⁴⁺], light rutile [2Fe³⁺ + W⁶⁺ ↔ 3Ti⁴⁺, 3Fe²⁺ + W⁶⁺ ↔ Ti⁴⁺ + (V³⁺, Al³⁺, Cr³⁺) +Nb⁵⁺], respectively. While the dark rutile was formed by cations including V³⁺, V⁴⁺, Cr³⁺, Nb⁵⁺, Sb⁵⁺ and W⁶⁺ by regional metamorphism of hostrock, the postdating light rutile was formed by redistribution of cations from predating dark rutile and addition of Fe²⁺ and W⁶⁺ from Au-bearing hydrothermal fluid during ductile shear.

• Applied Chemistry for Engineering
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• v.7 no.2
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• pp.269-279
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• 1996

The porous armophous catalysts, composed of $SiO_2-TiO_2-V_2O_5$ were prepared through SOL-GEL process by differing the preparation parameters. Selected the optimum SOL-GEL catalyst which has the best NO removal activity through the screening test, and repeated coating it on the cordierite monolith which is the freely through and inert. And examined the NOx, SOx simultaneous removal effect under S. C. R. condition. In addition to its characterization performances by the DTA, TGA, BET, $NH_3$ and NO TPD, ESCA, XRD etc.

• Journal of the Korean institute of surface engineering
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• v.35 no.6
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• pp.383-390
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• 2002

To investigate behaviors of Ti and O elements and microstructures of anodic titanium oxide films, the films were prepared by anodizing pure titanium in $H_2$S $O_4$, $H_3$P $O_4$, and $H_2O$$_2$ mixed solution at 180V. The microstructures and chemical states of the elements were analyzed using SEM, X-ray mapping, AFM, XRD, XPS (depth profile). The films formed on a titanium substrate showed porous layers which were composed of pore and wall, And with increasing anodizing time a hexagonal shape of cell structures were dominant and solace roughness increased. From the XRD result the structure of the Ti $O_2$ layer was anatase type of crystal on the whole. In the XPS spectra it was found that Ti and O were chemically binded in forms of Ti $O_2$, TiOH, $Ti_2$ $O_3$ at Ti 2p, and Ti $O_2$, $Ti_2$ $O_3$, $P_2$ $O_{5}$, S $O_4^{2-}$ at O ls respectively. Concentration of Ti $O_2$ decreased as the depth increased from the surface of the oxide film towards the substrate, but to the contrary concentrations of TiOH and $Ti_2$ $O_3$ increased.d.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.239.2-239.2
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• 2011

치과재료의 개발은 치과 치료 기술에 있어서 가장 중요한 요소이며, 현재 일반화되고 있는 치과 치료 기술 중 하나가 임플란트 시술이다. 임플란트의 기술 개발은 주로 임플란트 나사의 표면개질을 통한 기능개선에 초점을 ��추어 진행되어지고 있다. 본 연구에서는 Ti 임플란트 표면상에 양극산화법을 적용하여 다양한 지름 및 기공 크기를 갖는 $TiO_2$ 나노튜브를 제조하여 전자빔 조사를 통한 표면개질시 그 특성에 관한 연구를 수행하였다. 특히 전자빔 조사가 Ti/$TiO_2$ 나노튜브 표면상에 존재 가능한 조골세포의 성장 특성에 미치는 영향을 연구하였다. 양극산화법을 이용한 Ti/$TiO_2$ 나노튜브는 전해질로서 HF와 $NH_4F$를 사용하였으며, 20-80 V의 인가 전압하에서 내경 약 80 nm, 외경 약 124 nm 및 길이 약 280 nm-14 ${\mu}m$의 비교적 균질한 지름 및 분포를 갖는 Ti/$TiO_2$ 나노튜브를 제조하였다. 전자빔 조사는 EB-Tech (대전, 한국)의 electron-beam accelerator(Model ELV-4)를 이용하였으며, 1.0 MeV의 빔 에너지로 총 흡수선량이 50 kGy, 500 kGy 및 5,000 kGy로 조사하였다. 전자빔을 조사하기 전 후 Ti/$TiO_2$ 나노튜브 표면상에 조골세포주(Osteoblast cell)의 배양시간의 변화에 따른 효과를 연구한 결과 배양 전 후 전자빔 조사선량의 증가에 따라 조골세포의 흡착률이 증가함을 확인할 수 있었다. 특히 HF전해질을 이용한 $TiO_2$ 나노튜브의 경우 5,000 kGy 조사선량의 전자빔을 조사한 후 조골세포 흡착률이 약 160% 증가하는 결과를 얻을 수 있었다. 전자빔 조사 전 후 조골세포 흡착률의 변화원인은 전자빔 조사 유무에 따른 $Ti^{3+}$와 $Ti^{4+}$의 변화에 기인함을 규명하였다. 이러한 결과는 향후 임플란트용 Ti/$TiO_2$ 나노튜브의 표면 개질시 전자빔의 유용성을 제시한다고 할 수 있다.