• Title/Summary/Keyword: $V_{140}$

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Efficient Symbol Detection Algorithm for Space-frequency OFDM Transmit Diversity Scheme (공간-주파수 OFDM 전송 다이버시티 기법을 위한 효율적인 심볼 검출 알고리즘)

  • Jung Yun ho;Kim Jae seok
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.30 no.4C
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    • pp.283-289
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    • 2005
  • In this paper, we propose two efficient symbol detection algorithms for space-frequency OFDM (SF-OFDM) transmit diversity scheme. When the number of sub-carriers in SF-OFBM scheme is small, the interference between adjacent sub-carriers may be generated. The proposed algorithms eliminate this interference in a parallel or sequential manlier and achieve a considerable performance improvement over the conventional detection algorithm. The bit error rate (BER) performance of the proposed detection algorithms is evaluated by the simulation. In the case of 2 transmit and 2 receive antennas, at $BER=10^{-4}$ the proposed algorithms achieve the gain improvement of about 3 dB. The symbol detectors with the proposed algorithms are designed in a hardware description language and synthesized to gate-level circuits with the $0.18{\mu}m$ 1.8V CMOS standard cell library. With the division-free architecture, the proposed SF-OFDM-PIC and SF-OFDM-SIC symbol detectors can be implemented using 140k and 129k logic gates, respectively.

Thermoluminescence Properties of Elpasolite Scintillation Single Crystal (엘파소라이트 섬광형 단결정의 열형광 특성)

  • Kim, Sung-Hwan
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.2
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    • pp.492-497
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    • 2012
  • In this paper, we determined the scintillation and thermoluminescence properties of $Cs_2NaCeBr_6$ elpasolite scintillation crystal. The emission spectrum of $Cs_2NaCeBr_6$ is located in the range of 300 ~ 450 nm, peaking at 377 nm and 400 nm. And, the fluorescence decay time of the crystal is composed two components. The fast component is 140 ns (94%), and the slow component is 880 ns (6%) of the crystal. The after-glow is caused by the electron and hole traps in the crystal lattices. We determined thermoluminescence parameters of the traps in the crystal. The determined activation energy(E), kinetic order and frequency factor of the traps are 0.67 eV, 1.71 and $2.51{\times}10^8s^{-1}$ respectively. In this crystal, re-combination rate is more dominant phenomenon than the re-trapping rate.

A 10-bit 10-MS/s 0.18-um CMOS Asynchronous SAR ADC with Time-domain Comparator (시간-도메인 비교기를 이용하는 10-bit 10-MS/s 0.18-um CMOS 비동기 축차근사형 아날로그-디지털 변환기)

  • Jeong, Yeon-Hom;Jang, Young-Chan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.05a
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    • pp.88-90
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    • 2012
  • This paper describes a 10-bit 10-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with a rail-to-rail input range. The proposed SAR ADC consists of a capacitor digital-analog converter (DAC), a SAR logic and a comparator. To reduce the frequency of an external clock, the internal clock which is asynchronously generated by the SAR logic and the comparator is used. The time-domain comparator with a offset calibration technique is used to achieve a high resolution. To reduce the power consumption and area, a split capacitor-based differential DAC is used. The designed asynchronous SAR ADC is fabricated by using a 0.18 um CMOS process, and the active area is $420{\times}140{\mu}m^2$. It consumes the power of 0.818 mW with a 1.8 V supply and the FoM is 91.8 fJ/conversion-step.

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Preconcentration of Ultra Trace Amounts Bismuth in Water Samples Using Cloud Point Extraction with Na-DDTC and Determination by Electrothermal Atomic Absorption Spectrometry (ET-AAS) (Na-DDTC로 흐림점 추출을 사용한 물시료에서 초미량 비스머스의 예비농축)

  • Moghimi, Ali
    • Journal of the Korean Chemical Society
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    • v.52 no.2
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    • pp.140-147
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    • 2008
  • .A new approach for a cloud point extraction-electrothermal atomic absorption spectrometric method was used for determining bismuth. The aqueous analyte was acidified with sulfuric acid (pH 3.0-3.5). Triton X-114 was added as a surfactant and natriumdiethyldithiocarbaminat (Na-DDTC) was used as a complexing agent. After phase separation at 50oC based on the cloud point separation of the mixture, the surfactant-rich phasen was diluted using tetrahydrofuran (THF). Twenty microliters (20 L) of the enriched solution and 10 l of 0.1% (w/v) Pd(NO3)2 as chemical modifier were dispersed into the graphite tube and the analyte determined by electrothermal atomic absorption spectrometry. After optimizing extraction conditions and instrumental parameters, a preconcentration factor of 195 was obtained for a sample of only 10 mL. The detection limit was 0.04 ng ml-1 and the analytical curve was linear for the concentration range of 0.04-0.70 ng mL-1. Relative standard deviations were <5%. The method was successfully applied for the extraction and determination of bismuth in water samples.

Properties of Dy-doped $La_2O_3$ buffer layer for Fe-FETs with Metal/Ferroelectric/Insulator/Si structure

  • Im, Jong-Hyun;Kim, Kwi-Jung;Jeong, Shin-Woo;Jung, Jong-Ill;Han, Hui-Seong;Jeon, Ho-Seung;Park, Byung-Eun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.140-140
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    • 2009
  • The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

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Design of a W-Band Power Amplifier Using 65 nm CMOS Technology (65 nm CMOS 공정을 이용한 W-대역 전력증폭기 설계)

  • Kim, Jun-Seong;Kwon, Oh-yun;Song, Reem;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.3
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    • pp.330-333
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    • 2016
  • In this paper, we propose 77 GHz power amplifier for long range automotive collision avoidance radar using 65 nm CMOS process. The proposed circuit has a 3-stage single power amplifier which includes common source structure and transformer. The measurement results show 18.7 dB maximum voltage gain at 13 GHz 3 dB bandwidth. The measured maximum output power is 10.2 dBm, input $P_{1dB}$ is -12 dBm, output $P_{1dB}$ is 5.7 dBm, and maximum power add efficiency is 7.2 %. The power amplifier consumes 140.4 mW DC power from 1.2 V supply voltage.

The Properties of Na-Ca Exchange Current in Single Atrial Cells of ,The Rabbit (토끼 단일 심방근 세포에서 Na-Ca 교환전류의 특성에 관한 연구)

  • Youm, Wook;Ho, Won-Kyung;Suh, Kyung-Phill
    • Journal of Chest Surgery
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    • v.22 no.4
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    • pp.548-561
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    • 1989
  • In single atrial cells isolated from the rabbit the properties of inward current of Na-Ca exchange were investigated using the whole cell voltage clamp technique. The current was recorded during repolarization following brief 2 ms depolarizing pulse to +40 mV from a holding potential of * 70 mV. Followings are the results obtained: 1. When stimulated every 30 seconds, the inward currents were activated and reached peak values 6-12 ms after the beginning of depolarizing pulse. The mean current amplitude was 342 pA/cell. 2. The current decayed spontaneously from the peak activation and the time course of the relaxation showed two different phases fast and slow phase. The time constants were 10-18 ms and 60-140 ms, respectively. 3. The recovery of inward current was tested by paired pulse of various intervals. The peak current recovered exponentially with time constant of 140 ms and 1 p M isoprenaline accelerated the recovery process. 4. Relaxation time course was also affected by pulse interval and time constant of the fast phase was reduced almost linearly according to the decrease of pulse interval between 30 sec and 1 sec. 5. The peak activation was increased in magnitude by long prepulse stimulation, 5 p M Bay K, 1 p M isoprenaline or internal and external application of c-AMP. 6. The relaxation time constant of the fast phase was prolonged by 5 p M Bay K or c-AMP, and shortened by isoprenaline. However the time course of the slow relaxation phase was not so much changed. From the above results, it could be concluded that increase of the calcium current by Bay K or c-AMP results in the potentiation and prolongation of intracellular calcium transient, and the facilitation of Ca uptake by SR might be a mechanism of shortening the time constant of current relaxation by short interval stimulation or isoprenaline.

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A 10-bit 10-MS/s 0.18-㎛ CMOS Asynchronous SAR ADC with split-capacitor based differential DAC (분할-커패시터 기반의 차동 디지털-아날로그 변환기를 가진 10-bit 10-MS/s 0.18-㎛ CMOS 비동기 축차근사형 아날로그-디지털 변환기)

  • Jeong, Yeon-Ho;Jang, Young-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.2
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    • pp.414-422
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    • 2013
  • This paper describes a 10-bit 10-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) using a split-capacitor-based differential digital-to-analog converter (DAC). SAR logic and comparator are asynchronously operated to increase the sampling frequency. The time-domain comparator with an offset calibration technique is used to achieve a high resolution. The proposed 10-bit 10-MS/s asynchronous SAR ADC with the area of $140{\times}420{\mu}m^2$ is fabricated using a 0.18-${\mu}m$ CMOS process. Its power consumption is 1.19 mW at 1.8 V supply. The measured SNDR is 49.95 dB for the analog input frequency of 101 kHz. The DNL and INL are +0.57/-0.67 and +1.73/-1.58, respectively.

Effect of High Voltage Pulsed Current Stimulation on Surgical Wound of Rat (고전압맥동전류자극이 흰쥐 창상 치유에 미치는 영향)

  • Choi, Eun-Young;Lee, Jae-Hyoung;JeKal, Seung-Joo
    • Journal of Korean Physical Therapy Science
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    • v.2 no.2
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    • pp.495-508
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    • 1995
  • The purpose of this study was to determine the effects of high voltage pulsed current (HVPC) stimulation on wound healing. Thirty-four Sprague-Dawley adult female rats were assigned to experimental and control groups. Each rats were anesthetized with pentotal sodium, and a 10 mm full-thickness incision was made on the back. From 24 hours after surgery, the rats of experimental groups were stimulated with HVPC, $140{\mu}s$, 120 pps, 30-40 V for 30 minutes, daily. The rats were sacrified 2 days, 4 days and 6 days after stimulation, respectively. The skin was removed, and processed for light microscopic examination. The length of incisional wounds were measured by microcaliper, and nucleolar organizer regions were counted under light microscope. For the histological observations the specimens were stained with Hematoxylin and Eosin, Masson Trichrome, Gomori Reticulum and Ag-NOR. There was a significant decrease in the length of incisional wound in experimental group compared with control group at 6 days HVPC stimuation (p<0.05). In experimental group, wound were significant difference (p<0.01) between the duration of post surgery. The mean numbers of nucleolar organizer regions per nucleus were significantly increased in the experimental group at 6 days HVPC stimulation (p<0.05), and were significantly difference (p<0.01) between the duration of post surgery in experimental group. Histological examination of the wound site suggested a more rapid of epithelialization and collagen formation between experimental groups compared with control groups. The result may indicated that the HVPC with $140{\mu}s$, 120 pps, 30-40 V for 30 minutes promoted surgical wound healing in the rat.

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Implementation of an Instruction Buffer to process Variable-Length Instructions (가변 길이 명령어 처리를 위한 명령어 버퍼 구현)

  • 박주현;김영민
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.35C no.12
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    • pp.66-76
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    • 1998
  • In this paper, we implement a buffer capable of handling short loops references to statistically lower the miss rate of variable-length instructions stored in the instruction buffer. MAU(Mark Appending Unit) takes the instructions as they are fetched from external memory, performs some initial decode operations and stores the results of the decode in the buffer for reducing multiple decodes when instructions are executed repeatedly such as in a loop. It includes a decision block of whether hit or not for effectively processing branch instructions Each module of the proposed architecture of processing variable-length instruction is described in VHDL structurally and behaviorally and whether it is working well or not is checked on V-System simulator of Model Technology Inc. We synthesized and simulated the architecture using an ASIC Synthesizer tool with 0.6$\mu\textrm{m}$ 5-Volt CMOS COMPASS library. Operation speed is up to 140MHz. The architecture includes about 17,000 gates.

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