• Journal of Korean Ophthalmic Optics Society
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• v.16 no.4
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• pp.357-362
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• 2011

Purpose: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer were fabricated, and their characteristics and structures were studied. Methods: the optical constants, n and k, of the $Ti_3O_5$ and $SiO_2$ thin films were obtained from the transmittances of their thin film. The narrow-band pass color-filters were designed with these optical constants and the AR coating of the filter was also designed. $Ti_3O_5/SiO_2$ multilayer filters were made by electron beam evaporation apparatus and the transmittaces of the filters were measured by spectrophotometer. the number of layers and the thicknesses of filters were calculated from the cross section of filters by SEM image and the composition of filters was analysed by XPS analysis. Results: The optimization of AR coating for the narrow-band pass color-filter was [air$|SiO_2(90)|Ti_3O_5(36)|SiO_2(5)|Ti_3O_5(73)|SiO_2(30)|Ti_3O_5(15)|$ glass], and the optimization of filter layer for the color filter was [air$|SiO_2(192)|Ti_3O_5(64)|SiO_2(102)|Ti_3O_5(66)|SiO_2(112)|Ti_3O_5(74)|SiO_2(120)|Ti_3O_5(68)|SiO_2(123)|Ti_3O_5(80)|SiO_2(109)|Ti_3O_5(70)|SiO_2(105)|Ti_3O_5(62)|SiO_2(99)|Ti_3O_5(63)|SiO_2(98)|Ti_3O_5(51)|SiO_2(60)|Ti_3O_5(42)|SiO_2(113)|Ti_3O_5(88)|SiO_2(116)|Ti_3O_5(68)|SiO_2(89)|Ti_3O_5(49)|SiO_2(77)|Ti_3O_5(48)|SiO_2(84)|Ti_3O_5(51)|SiO_2(85)|Ti_3O_5(48)|SiO_2(59)|Ti_3O_5(34)|SiO_2(71)|Ti_3O_5(44)|SiO_2(65)|Ti_3O_5(45)|SiO_2(81)|Ti_3O_5(52)|SiO_2(88)|$ glass]. It was known that the color-filters fabricated by the simulation data were composed of 41 layers by SEM image and the top layer of filters was $SiO_2$ layer and the filters were composed of $SiO_2$/$Ti_3O_5$ multilayer by XPS analysis. It was also known that the mixed thin film of TiO2 and $Ti_3O_5$ was made during the deposition of the $Ti_3O_5$ material. Conclusions: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer of 41 layer were fabricated, and it was known that the mixed form of TiO2 and $Ti_3O_5$ thin film was made during the deposition of the $Ti_3O_5$ material.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.52-57
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• 2010

$BiFeO_3/Pb(Zr_{0.52}Ti_{0.48})O_3$(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/$SiO_2$/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 kV/cm was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of $44.3{\mu}C/cm^2$ was obtained at room temperature at 1 kHz with the coercive field($2E_c$) of 681.4 kV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.75-78
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• 2002

The dielectric properties for Ni electrode multilayer ceramic chip capacitor for Y5V has been studied with $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_2+MnO_2$ 0.2wt%, $Y_2O_3$ 0.18wt%, $SiO_2$ 0.15wt%, glass frit 1 wt% composition. The m ratio in the range of 1.006 ~ 1.012 have dielectric constant 9,500 ~ 14,500 and insulation resistance 390 ~ 460 $G{\Omega}$. Using the dielectrics, nikel electrode multilayer chip capacitor with Y5V, 104Z in EIA 0603 size specific capacitance were developed.

• Fire Science and Engineering
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• v.19 no.2 s.58
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• pp.75-80
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• 2005

This dissertation is about the development of PTC(Positive Temperature Coefficient) thermistor by composition method. A multilayer-type PTC samples were fabricated under optimal conditions after setting the experimental composition equation as $(0.90Ba+0.05Sr+0.05Ca)TiO_3+0.01TiO_3+0.01SiO_2+0.0008MnO_2+0.0018Nb_2O_5$ and their testing results were analyzed. The fabrication method of SMD(Surface Mounted Device) multilayer -type sample based on the composition ratio has the advantages in lowering its resistivity at room temperature, considerably, and increasing maximum current level, as needed. Although there is a disadvantage of peak resistivity drop by the multilayer, causing the increasement of thermal capacity. and thereby, increasing the switching delay time, a high applying voltage can increase the peak resistivity and shorten the switching delay time. The voltage-current characteristic showed that the more multilayers increased the initial maximum current and the transition voltage that increased the resistivity abruptly according to the curie point. The element it could be applied with the sensor for the fire detector.

• Journal of the Korean institute of surface engineering
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• v.52 no.4
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• pp.211-226
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• 2019

Optical thin films were deposited by using a reactive pulsed DC magnetron sputtering method with a high density plasma(HDP). In this study, the effect of sputtering process conditions on the microstructure and optical properties of $SiO_2$, $TiO_2$, $Nb_2O_5$ thin films was clarified. These thin films had flat and dense microstructure, stable stoichiometric composition at the optimal conditions of low working pressure, high pulsed DC power and RF power(HDP). Also, the refractive index of the $SiO_2$ thin films was almost constant, but the refractive indices of $TiO_2$ and $Nb_2O_5$ thin films were changed depending on the microstructure of these films. Antireflection films of $Air/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/Glass$ structure designed by Macleod program were manufactured by our developed sputtering system. Transmittance and reflectance of the manufactured multilayer films showed outstanding value with the level of 95% and 0.3%, respectively, and also had excellent durability.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.378-387
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• 1994

To improve the properties of $PbTiO_3$ thin films successfully grown by thermal diffusion of 3 component layers of $Ti0_2/Pb/TiO_2(900{\AA}/900{\AA}/900{\AA})$ in preceding research, 3, 5, 7, 9, and 11 multilayer structures $(TiO_2/Pb/.../Tio_2)$ with thinner component layer of $200~300 {\AA}$ thick were deposited on Si substrate by RF sputtering, which were followed by RTA to form $PbTiO_3$ thin films. As a result, $PbTiO_3$ single phase was formed above $500^{\circ}C$. When the thickness of component layer reduced and the number of component layers increased, suppression of Pb-silicate and voids formation resulted in relatively sharp interfaces and the film composition became more homogeneous. Relative dielectric constants in MIM structure were independent of the annealing condition, but they increased with increasing thickness of the $PbTiO_3$ thin films. The maximum breakdown field in MIS structure reached 150kV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.31-34
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• 2006

In this study, $(Ba_{0.7}\;Sr_{0.3})TiO_3$ was coated on Pt/Ti/$SiO_2$/Si wafer by using Sol-Gel method. Coating process was repeated 3~5 times and then sintered at 750[$^{\circ}C$] for 1 hour. Each specimen was analyzed structure and electrical characteristics. In structure characteristics, EDX analyzed the samples ratio of the formation on the structural property. Thermal behavior was observed with TG-DTA and concluded that the heat-treatment of the samples was degreed 750[$^{\circ}C$]. Surface and section of thin films were observed with SEM.

• Fire Science and Engineering
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• v.16 no.4
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• pp.15-19
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• 2002

This dissertation is about the development of $BaTiO_3$-type PTC(Positive Temperature Coefficient) thermistor by composition method. A multilayer-type PTC samples were fabricated under optimal conditions after setting the experimental composition equation as ($Ba_{0.95-x}$S $r_{0.05}$$Ca_{x}$ )$TiO_3$-$0.01TiO_2$-$0.01SiO_2$-$\alpha$$MnCO_3$-$\beta$N $b_2$ $O_{5}$.) and their testing results were analyzed. The optimal sin-tering and cooling temperatures were 13$50^{\circ}C$ for two hours and $100^{\circ}C$/h for an hour, respectively; By composing Ca and Mn, dopants to lower the resistivity at room temperature, and Nb, a dopant to raise peak resistivity(Ca:5 mol%, Mn:0.08 mol%, Nb:0.18 mol%), appropriately, a PTC thermistor, having the characteristics of relatively low resistivity at room temperature and high peak resistivity and a good temperature coefficient, has been developed. And we find that it is possible of application for fire detection sensor.r.r.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.1-5
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• 2006

The effect of A/B moi ratios and sintering temperatures on dielectric properties and microstructure of $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_3$ ceramics were investigated. The dielectric constant decreased with increasing the A/B mol ratio. However, the dielectric loss is improved. As the dielectric properties of A/B mol ratio with m = 1.009 at sintered temperature $1260^{\circ}C$, we obtained dielectric constant 12,800, dielectric loss $3.5\%$ and Y5V temperature characteristics. Highly reliable Ni-MLCCs, 1.6mm$(length){\time}0.8mm(width){\time}0.8mm$(height) with capacitance of 1.23 ${\mu}F$ and 야ssipation loss of $5.2\%$ were obtained employing dielectric material composed of $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_3$ - $MnO_2\;0.2wt\%-Y_2O_3\;0.18wt\%,\;-\;SO_2\;0.15wt\%-(Ba_{0.4}Ca_{0.6})SiO_3\;1wt\%$.

• Journal of the Korean Ceramic Society
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• v.28 no.9
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• pp.675-682
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• 1991

Among many problems that need to be solved in the process of preparing multilayer chip LC filters, we studied the control of shrinkage in order to prevent the crack, warpage, and/or delamination which occurs at the interface between the inductance (L part) and the capacitance (C part). Shrinkage was controlled by compositions, powder size, calcining temperature and amount of organic binder. Capacitance sheet was prepared by mixing 65 wt% binder with the composition of 96 wt% TiO2 having an average particle size of 0.5 $\mu\textrm{m}$, 3 wt% CuO. After small amount of MnO2 and SiO2 added, it was calcined at 750$^{\circ}C$ for 2 hr. Inductance sheet was prepared by mixing 60 wt% binder with the composition of 49.5% mol% Fe2O3, 20.5 mol% ZnO, 20 mol% NiO and 10 mol% CuO which was calcined at 775$^{\circ}C$ for 2 hr. These sheets was laminated at 250 kg/$\textrm{cm}^2$, and cofired at 900$^{\circ}C$ for 2 hr to give rise to a multilayer chip LC filter without any warpage.