• Journal of the Korean Society for Heat Treatment
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• v.18 no.5
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• pp.281-287
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• 2005

Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.603-608
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• 2017

$Si_3N_4$ is a ceramic material attracting attention in many fields because of its excellent abrasion resistance. In addition, Ti and TiAl alloys are metals used in a variety of high temperature environments, and have attracted much attention because of their high strength and high melting points. Therefore, study of the interface reaction between $Si_3N_4/Ti$ and $Si_3N_4/TiAl$ can be a useful practice to identify phase selection and diffusion control. In this study, $Si_3N_4/Ti_5Si_3+TiN/TiN/Ti$ diffusing pairs were formed in the $Si_3N_4/Ti$ interfacial reaction and $Si_3N_4/TiN(Al)/Ti_3Al/TiAl$ diffusion pathway was identified in the $Si_3N_4/TiAl$ interfacial reaction. The diffusion layers of the interface reactions were identified and, to investigate the kinetics of the diffusion layer, the integrated diffusion coefficients were estimated.

• Journal of the Korean Society for Heat Treatment
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• v.9 no.3
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• pp.219-227
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• 1996

The purpose of this research is to develop the technology for the synthesis of (Ti,Al)N powder, which shows simultaneously the excellent properties of TiN and AlN, from the Ti-Al intermetallic compounds by the direct nitriding method. The effects of variables such as temperature, Ti-Al intermetallic compounds ($TiAl_3$, TiAl and $Ti_3Al$) were investigated by TG, XRD and SEM. The (Ti,Al)N powder can be easily synthesized from the intermetallic compounds by the direct nitriding method. Among the intermetallic compounds, the nitriding behavior increased with TiAl> $Ti_3Al$ > $TiAl_3$, as the difference of diffusion coefficient for nitrogen in each materials. The ternary nitride such as $Ti_2AlN$ and $Ti_3Al_2N_2$ can be synthesized by the direct nitriding method, although the ternary nitride coexist with TiN and AlN. The ternary nitrides are stable below $1400^{\circ}C$, but these are gradually decomposed into TiN and AlN above $1400^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
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• v.10 no.2
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• pp.138-149
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• 1997

TiN and AlN are ceramic materials with extensive applications due to its excellent mechanical and chemical properties at elevated temperature. The purpose of this research is to develop the method for the synthesis of ternary nitride powder, titanium-aluminum-nitrogen system, which have an excellent property of both TiN and AlN. The ternary nitride such as $Ti_3AlN$, $Ti_2AlN$ and $Ti_3Al_2N_2$ can be synthesized by the interdiffusion nitriding method in Ar gas, however, the ternary nitride coexist with TiN, AlN, $Ti_3Al$ and ${\alpha}$-Ti. The ternary nitride are stable below $1400^{\circ}C$, but these are gradually decomposed into TiN, $Ti_3Al$ and AlN above $1400^{\circ}C$. The thermal oxidation characteristics of the Ti-Al-N compound synthesized by the interdiffusion nitriding method is superior to that of the TiN+AlN mixed powder, and the oxidation for both materials show the differential behaviors.

• Journal of the Korean institute of surface engineering
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• v.25 no.5
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• pp.235-252
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• 1992

(Ti, Al)N films were deposited on 304 stainless steel sheet by D.C. magnetron sputtering using Al target and Ti plate. The high temperature oxidation of (T, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The high temperature oxidation test of (Ti, Al)N showed that (Ti, Al)N has better high temperature resistance than TiN and TiC films. TiC films were cracked at 40$0^{\circ}C$ in air TiN films quickly were oxidised at $600^{\circ}C$, were spalled more than $700^{\circ}C$. But (Ti, Al)N films are relatively stable to$ 900^{\circ}C$. The good resistance to high temperature oxida-tion of (Ti, Al)N films are due to the formation of dense Al2O3 and TiO2 oxide layer. Especially, Al2O3 oxide layer is more important. The results obtained from this study show, it is believe that the (Ti, Al)N film by D.C. magnetron sputtering is promising for the use of high temperature and wear resistance mate-rials.

• Journal of the Korean institute of surface engineering
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• v.35 no.6
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• pp.408-414
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• 2002

TiN and TiAlN coating layer were deposited on WC-Co steel substrates by an arc ion plating(AIP) technique. The crystallinity and morphology for the deposited coating layers were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The impact behaviors of the deposited TiN and TiAlN coating layer were investigated with a ball-on-plate impact tester. Beyond $10^2$ impact cycle, TiAlN coating layer showed superior impact wear resistance compared to TiN coating layer. On the other hand, both TiN and TiAlN coating layers started to be partially failed between $10^2$ and $10^3$ impact cycle. Above $10^3$ impact cycle, TiN and TiAlN coating layers showed similar impact behavior because of the substrate effect.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.149-153
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• 2012

Ti2AlN MAX-phase films were synthesized through the post-annealing process of as-deposited Ti-Al-N films. Near amorphous or quasi-crystalline ternary Ti-Al-N films were deposited on Si and Al2O3 substrates by sputtering a Ti2AlN MAX-phase target at room temperature, 300 ℃ and 450 ℃, respectively. A vacuum annealing of those films at 800 ℃ for 1 hour changed those films to crystalline Ti2AlN MAX-phase. The polycrystalline Ti2AlN MAX-phase films exhibited very excellent oxidation resistance due to its characteristics microstructure (nanolaminates), which has potential applications for high-temperature protective coatings. The microstructure and composition of Ti2AlN MAX-phase films were investigated using with a variety of characterization tools.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.119-120
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• 2013

공구, 다이몰드 등에 널리 쓰이는 TiC, TiN, CrN, TiCrN, TiAlN 코팅의 산화특성을 비교하기 위하여 $600^{\circ}C-900^{\circ}C$에서 대기중 산화시험을 실시하였다. 내산화성은 (TiC, TiN), TiAlN, TiCrN, CrN 코팅의 순서로 증가하였다. 코팅원소중 Ti는 $TiO_2$로, Cr은 $Cr_2O_3$로, Al은 $Al_2O_3$로 산화되었다.

• Journal of the Korean institute of surface engineering
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• v.37 no.3
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• pp.152-157
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• 2004

Ti-Al-N ($Ti_{75}$ $Al_{25}$ N) and Ti-Al-Si-N ($Ti_{69}$ $Al_{23}$ $Si_{8}$N) coatings synthesized by a DC magnetron sputtering technique were studied comparatively with respect to phase characterization and high-temperature oxidation behavior. $Ti_{69}$ $Al_{23}$ $Si_{ 8}$N coating had a nanocomposite microstructure consisting of nanosized(Ti,Al,Si)N crystallites and amorphous $Si_3$$N_4$, with smooth surface morphology. Ti-Al-N coating of which surface $Al_2$$O_3$ layer formed during oxidation suppressed further oxidation. It was sufficiently stable against oxidation up to about $700^{\circ}C$. Ti-Al-Si-N coating showed better oxidation resistance because both surface Ab03 and near-surface $SiO_2$ layers suppressed further oxidation. XRD, GDOES, XPS, and scratch tests were performed.