• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.257-260
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• 2003

In this study, the structural, dielectric and piezielectric properities of $xPb(Mg_{1/3}Nb_{2/3})O_3-(0.5-x)Pb(Ni_{1/3}Nb_{2/3})O_3-0.5Pb(Zr_{0.3}Ti_{0.7})O_3$ ceramics were investigated with the substitution of $PbMg_{1/3}Nb_{2/3}O_3$. The results showed that the substitution of the $PbMg_{1/3}Nb_{2/3}O_3$ was effective in increasing the dielectric constant and electromechanical coupling factor $(K_p)$. The dielectric constant, dielectric loss and Kp showed the highest values of 4293, 2.4%, 0.59 relatively, when the substitution of amount of $PbMg_{1/3}Nb_{2/3}O_3$ was 5 mol%.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.215-218
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• 1994

Dielectric properties of $(Sr_{l-x}{\cdot}Ca_x)_mTiO_3+0.006Nb_2O_5$($0.05{\leq}x{\leq}0.2$, 0.996$N_2$) were painted on the surface with CuO paste, and then annealed at $1100^{\circ}C$ for 2hr. Grain size increased with increasing substitutional contents of Ca up to 15[mol%], but decreased with further substitution. In the specimens with $10{\sim}15[mol%]$ of Ca and m=1, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss($tan{\delta}[%]$) <0.3[%] and capacitance change rate with temperature <${\pm}10[%]$, respectively. All the specimens in this study exhibited dielectric relaxation with frequency as a function of the temperature. The dispersive frequency was over $10^6[Hz]$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.25-28
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• 1993

In this study, the dielectric properties of (Sr$\sub$1-x/Ca$\sub$x/)TiO$_3$+yNb$_2$O$\sub$5/(0.1 x 0.3, 0.004 y 0.008) ceramic capacitor were investigated. The specimen was sintered for 3hr at 1350$^{\circ}C$ in gas(N$_2$) atmosphere. The reduced specimen fared at 1200$^{\circ}C$ in air. The used specimens had the apparent permittivity of 3${\times}$10$^4$∼4${\times}$10$\^$5/, tan$\delta$ of 0.05 -0.2, and insulating resistance of 10$\sub$9/∼10$\^$12/ $\Omega$.cm. The specimens had the stable temperature coefficient of capacitance.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.3
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• pp.7-12
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• 1999

In this paper, dielectric and strain properties of (1-f-y)PMN-yPT-xST ceramics investigated with the amount of $\textrm{SrTiO}^3$(ST). The $\textrm{SrTiO}^3$ content is ranged within 1~6㏖%. Another compositions with excess MgO also investigated. As the amount of ST is increased, dielectric constant has a maximum value at 5㏖% composition. The Curie temperature is decreased linearly with increasing the amount of ST. Coercive field and ramnant polarization has a maximum value at l㏖% composition. As for the effects of excess MgO, the dielectric constant has been increased by the addition of excess MgO up to 3㏖% to a 0.8PMN-0.12PT-0.04ST specimen. But the strain has been decreased by the addition of excess MgO.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.211-217
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• 2004

The oxidation behaviors of Ti-10Ta-10Nb alloy and Ti-6Al-4V alloy were studied in dry air atmosphere. Specimens were melted in consumable vacuum arc furnace and homogenized at $1050^{\circ}C$ for 24 h. Hot rolling was performed at $1000^{\circ}C$. Specimens of the alloys were oxidized as the temperature range $400~650^{\circ}C$ for 30 min. The oxidation behavior of the alloys was analysed by optical microscope, SEM/EDX, XRD, XPS and TGA. Immersion test was performed in 1% Lactic acid. In the microscope observation, oxide layer of Ti-10Ta-10Nb alloy was denser and thinner than Ti-6Al-4V's. The weight gains during the oxidation rapidly increased at the temperature above $600^{\circ}C$ in Ti-6Al-4V's alloy and$ 700^{\circ}C$ in Ti-10Ta-10Nb alloy. According to XRD results, oxide layers were composed of mostly $TiO_2$(rutile) phase. It was analysed that the passive film of the Ti alloys consisted of $TiO_2$ through X-ray photoelectron spectroscopy(XPS) analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.506-510
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• 2012

In this study, lead-free $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ ceramics were fabricated by conventional mixed oxide method. Structural and electrical properties of lead-free $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ ceramics with the variation of sintering temperature were investigated. As results of x-ray diffraction analysis, all specimens showed a typical polycrystalline perovskite structure without presence of the second phase. Sintered density increased with an increases of sintering temperature and the specimen sintered at $1,020^{\circ}C$ showed the maximum value of 4.5 $g/cm^3$. The average grain size of the $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ specimen sintered at $1,020^{\circ}C$ is about 0.83 ${\mu}m$. Electromechanical coupling factor, relative dielectric constant and dielectric loss of $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ specimens sintered at $1,020^{\circ}C$ were 0.252, 741 and 0.043% respectively.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.145-149
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• 2016

$(Bi_{1/2}Na_{1/2})_{0.94}Ba_{0.06}(Ti_{1-x}Nb_x)O_3$ (BNBTxNb) ceramics were investigated in terms of the crystal structure as well as the ferroelectric, dielectric, and piezoelectric properties. While little change was observed in the microstructure except for a slight decrease in the average grain size, a significant change was noticed in the temperature dependence of dielectric and piezoelectric properties. It was shown that the property changes are closely related to the downward shift in the position of the ferroelectric-to-relaxor transition temperature with increasing amount of Nb doping. A special emphasis is put on the fact that Nb doping is so effective at decreasing the ferroelectric-to-relaxor transition temperature that even at no more than 2 at.% Nb addition, the transition temperature was already brought down slightly below room temperature, resulting in the birth of a large strain at 0.46 %, equivalent to $S_{max}/E_{max}=767pm/V$.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• Korean Journal of Optics and Photonics
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• v.13 no.1
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• pp.32-37
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• 2002

Passive polarization mode splitters at λ= 1.55 ${\mu}{\textrm}{m}$ were designed and fabricated based on Ti:x-cut LiNbO$_3$ single-mode optical waveguide and two-mode interference theory. The splitting ratio with waveguide width 8 ${\mu}{\textrm}{m}$, branching angle 0.55$^{\circ}$ and interfering length 470 ${\mu}{\textrm}{m}$ showed 16.18 dB, 21.25 dB for TE and TM input polarization modes, respectively. Polarization cross-talk of -16.28 dB and -21.28 dB for TE and TM modes was achieved. Total insertion losses of 2.24 dB/cm (TE) and 2.41 dB/cm (TM) were also measured. The devices operated nearly wavelength independently over a range or 30 nm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.